JPH05211272A - Lead frame - Google Patents

Lead frame

Info

Publication number
JPH05211272A
JPH05211272A JP4011491A JP1149192A JPH05211272A JP H05211272 A JPH05211272 A JP H05211272A JP 4011491 A JP4011491 A JP 4011491A JP 1149192 A JP1149192 A JP 1149192A JP H05211272 A JPH05211272 A JP H05211272A
Authority
JP
Japan
Prior art keywords
diode
island
lead
lead frame
overvoltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP4011491A
Other languages
Japanese (ja)
Inventor
Isamu Endo
勇 遠藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP4011491A priority Critical patent/JPH05211272A/en
Publication of JPH05211272A publication Critical patent/JPH05211272A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Lead Frames For Integrated Circuits (AREA)

Abstract

PURPOSE:To protect an element in a semiconductor pellet against an overvoltage to be externally applied by placing a diode for preventing application of an overvoltage. CONSTITUTION:A lead frame has an island 2 connected to a GND pin 1G and a plurality of leads 1 provided on a periphery of the island 2. A lead 2a connected to a power source is connected to the island 2 via a Zener diode 3. Thus, the diode 3 for preventing application of an overvoltage is placed in the frame thereby to eliminate application of a voltage larger than predetermined into a semiconductor pellet, thereby preventing damage to an element in the pellet. Incidentally, the pin 1G may be connected to the end via the diode 3, the lead 1 connected to the terminal of the pellet may be connected to the end via the diode 3, and further be connected to the island 2 by a voltage clamp diode.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は半導体装置のリードフレ
ームに関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device lead frame.

【0002】[0002]

【従来の技術】従来のリードフレームは、半導体チップ
を載置するアイランドとこのアイランドから離して、ア
イランドの周辺に配置された複数のリードから成り、過
電圧印加による半導体ペレットの破壊防止を行なう機能
はついていなかった。
2. Description of the Related Art A conventional lead frame is composed of an island on which a semiconductor chip is mounted and a plurality of leads arranged around the island away from the island. The lead frame has a function of preventing destruction of a semiconductor pellet by applying an overvoltage. It wasn't on.

【0003】[0003]

【発明が解決しようとする課題】外部より印加される過
電圧に対して半導体ペレット内部の素子を保護する。
The element inside the semiconductor pellet is protected against an overvoltage applied from the outside.

【0004】[0004]

【課題を解決するための手段】本発明のリードフレーム
は、一態レベル以上の電圧はクランヴするダーイオード
を備えている。
The lead frame of the present invention is provided with a diode that clamps a voltage of one level or more.

【0005】[0005]

【実施例】次に本発明について図面を参照して説明す
る。
The present invention will be described below with reference to the drawings.

【0006】図1(a)は本発明の一実施例の平面図で
(b)は(a)のA部の拡大図、(c)は(b)の側面
図である。図1のリードフレームは、アイランド2がG
NDピン1Gに接続している例で、アイランド2の周辺
に複数のリード1を備えている。この点は従来と同じで
ある。この実施例は、図1に示すように、電源に接続す
るリード1aとアイランド2をツェナーダイオード3に
てつなげる。
FIG. 1A is a plan view of an embodiment of the present invention, FIG. 1B is an enlarged view of part A of FIG. 1A, and FIG. 1C is a side view of FIG. In the lead frame of FIG. 1, the island 2 is G
In the example in which it is connected to the ND pin 1G, a plurality of leads 1 are provided around the island 2. This point is the same as the conventional one. In this embodiment, as shown in FIG. 1, a lead 1a connected to a power source and an island 2 are connected by a Zener diode 3.

【0007】図2(a),(b),(c),(d),
(e)は、第2の実施例を示す図で、(a)は平面図、
(b)は(a)のA部分の拡大図、(c)は(b)の側
面図、(d)は(a)のB部分の拡大図、(e)は
(d)の側面図である。この実施例は、電源に接続する
リード1aの先端部1bでアイランド2を囲み、図2に
示すように、GNDピン1Gと先端部1bをツェナーダ
イオード3で接続し、半導体ペレットの端子に接続する
リード1もツェナーダイオード3で先端部1bと接続
し、さらに、アイラド2に電圧クランプ用ダイオード4
で接続している。
2 (a), (b), (c), (d),
(E) is a figure which shows a 2nd Example, (a) is a top view,
(B) is an enlarged view of A part of (a), (c) is a side view of (b), (d) is an enlarged view of B part of (a), (e) is a side view of (d). is there. In this embodiment, a tip 1b of a lead 1a connected to a power supply surrounds an island 2 and, as shown in FIG. 2, a GND pin 1G and a tip 1b are connected by a zener diode 3 and connected to a terminal of a semiconductor pellet. The lead 1 is also connected to the tip portion 1b by the Zener diode 3, and further the voltage clamping diode 4 is connected to the eyerad 2.
Are connected with.

【0008】[0008]

【発明の効果】以上説明したように本発明は、電圧クラ
ンプ用ダイオードをリードフレーム上に搭載したので、
一定電圧以上は、半導体ペレット内部に印加されず、半
導体ペレット内部素子の破壊を防ぐという効果を有す
る。
As described above, according to the present invention, since the voltage clamping diode is mounted on the lead frame,
A voltage above a certain level is not applied to the inside of the semiconductor pellet, and has the effect of preventing damage to the elements inside the semiconductor pellet.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の一実施例の概略図である。FIG. 1 is a schematic view of an embodiment of the present invention.

【図2】本発明の第2の実施例の概略図である。FIG. 2 is a schematic diagram of a second embodiment of the present invention.

【符号の説明】[Explanation of symbols]

1 リード 2 アイランド 3 ツェナーダイオード 4 ダイオード 1 Lead 2 Island 3 Zener diode 4 Diode

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 過電圧印加防止用ダイオードを搭載して
いることを特徴とするリードフレーム。
1. A lead frame comprising a diode for preventing overvoltage application.
JP4011491A 1992-01-27 1992-01-27 Lead frame Withdrawn JPH05211272A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4011491A JPH05211272A (en) 1992-01-27 1992-01-27 Lead frame

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4011491A JPH05211272A (en) 1992-01-27 1992-01-27 Lead frame

Publications (1)

Publication Number Publication Date
JPH05211272A true JPH05211272A (en) 1993-08-20

Family

ID=11779516

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4011491A Withdrawn JPH05211272A (en) 1992-01-27 1992-01-27 Lead frame

Country Status (1)

Country Link
JP (1) JPH05211272A (en)

Similar Documents

Publication Publication Date Title
US5938956A (en) Circuit and method for heating an adhesive to package or rework a semiconductor die
MY125306A (en) Semiconductive chip having a bond pad located on an active device
JPH02278740A (en) Packaging of semiconductor device
KR960015873A (en) Lead frame
TWI267147B (en) Semiconductor device and hybrid integrated circuit device
JPH05211272A (en) Lead frame
MY121237A (en) Semiconductor device
KR950031481U (en) Taping device for semiconductor general and lead on chip (LOC) lead frames
KR970024110A (en) Semiconductor device and method of manufacturing same (SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME)
JPH10270805A (en) Semiconductor laser device
JPH0556860B2 (en)
JPS62166588A (en) Semiconductor laser
JP2914409B2 (en) Semiconductor element
JPS63228309A (en) Semiconductor integrated circuit
JPS5947461B2 (en) lead frame
JPH03194961A (en) High withstand voltage semiconductor device
JP2572299B2 (en) Bonding wire
JPH04213864A (en) Resin sealed type semiconductor device
JPH0248144B2 (en) HANDOTAISHUSEKIKAIRO
JPH0294644A (en) Semiconductor device
TW348307B (en) Semiconductor device and lead frame used thereby
JPH05190709A (en) Multichip package
KR0122905Y1 (en) Semiconductor package
JPS63175460A (en) Surge protection device for semiconductor integrated circuit
JPS59175149A (en) Semiconductor device

Legal Events

Date Code Title Description
A300 Withdrawal of application because of no request for examination

Free format text: JAPANESE INTERMEDIATE CODE: A300

Effective date: 19990408