TW348307B - Semiconductor device and lead frame used thereby - Google Patents
Semiconductor device and lead frame used therebyInfo
- Publication number
- TW348307B TW348307B TW086117532A TW86117532A TW348307B TW 348307 B TW348307 B TW 348307B TW 086117532 A TW086117532 A TW 086117532A TW 86117532 A TW86117532 A TW 86117532A TW 348307 B TW348307 B TW 348307B
- Authority
- TW
- Taiwan
- Prior art keywords
- semiconductor device
- inner lead
- lead
- lead frame
- stitch portion
- Prior art date
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49575—Assemblies of semiconductor devices on lead frames
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49503—Lead-frames or other flat leads characterised by the die pad
- H01L23/4951—Chip-on-leads or leads-on-chip techniques, i.e. inner lead fingers being used as die pad
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- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49541—Geometry of the lead-frame
- H01L23/49562—Geometry of the lead-frame for devices being provided for in H01L29/00
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- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
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- H01L2224/0554—External layer
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- H01L2224/06134—Square or rectangular array covering only portions of the surface to be connected
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- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
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- H01L2224/481—Disposition
- H01L2224/4813—Connecting within a semiconductor or solid-state body, i.e. fly wire, bridge wire
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- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
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- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Wire Bonding (AREA)
- Lead Frames For Integrated Circuits (AREA)
Abstract
A semiconductor device of a lead on chip structure, comprising: a semiconductor chip (pellet) having a plurality of bonding pads provided thereon; and a plurality of leads disposed on the semiconductor chip, each of the leads including an outer lead and an inner lead having a stitch portion formed at a tip end thereof and wire-bonded to one of the bonding pads; in which at least one of the inner leads and the stitch portion of the at least one inner lead are disposed so as to detour around an inner lead and an associated one of a stitch portion other than the at least one inner lead and the stitch portion of the at least one inner lead.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8313305A JPH10154724A (en) | 1996-11-25 | 1996-11-25 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
TW348307B true TW348307B (en) | 1998-12-21 |
Family
ID=18039627
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW086117532A TW348307B (en) | 1996-11-25 | 1997-11-20 | Semiconductor device and lead frame used thereby |
Country Status (4)
Country | Link |
---|---|
JP (1) | JPH10154724A (en) |
KR (1) | KR19980042738A (en) |
CN (1) | CN1183643A (en) |
TW (1) | TW348307B (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102569242B (en) * | 2012-02-07 | 2015-05-27 | 日月光半导体制造股份有限公司 | Semiconductor packaging part of integrated screened film and manufacture method thereof |
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1996
- 1996-11-25 JP JP8313305A patent/JPH10154724A/en active Pending
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1997
- 1997-11-20 TW TW086117532A patent/TW348307B/en active
- 1997-11-25 KR KR1019970062838A patent/KR19980042738A/en not_active Application Discontinuation
- 1997-11-25 CN CN97122148A patent/CN1183643A/en not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
JPH10154724A (en) | 1998-06-09 |
CN1183643A (en) | 1998-06-03 |
KR19980042738A (en) | 1998-08-17 |
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