JPH03194961A - High withstand voltage semiconductor device - Google Patents
High withstand voltage semiconductor deviceInfo
- Publication number
- JPH03194961A JPH03194961A JP1333513A JP33351389A JPH03194961A JP H03194961 A JPH03194961 A JP H03194961A JP 1333513 A JP1333513 A JP 1333513A JP 33351389 A JP33351389 A JP 33351389A JP H03194961 A JPH03194961 A JP H03194961A
- Authority
- JP
- Japan
- Prior art keywords
- withstand voltage
- element circuit
- power supply
- protecting diode
- voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 22
- 230000015556 catabolic process Effects 0.000 description 7
- 230000000694 effects Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
- H01L2224/49113—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting different bonding areas on the semiconductor or solid-state body to a common bonding area outside the body, e.g. converging wires
Landscapes
- Semiconductor Integrated Circuits (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野Ｊ
本発明は高耐圧半導体装置に関し、特にその保護ダイオ
ードの接続回路構造に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application J] The present invention relates to a high-voltage semiconductor device, and particularly to a connection circuit structure of a protection diode thereof.
［従来の技術Ｊ
従来、この種の保護ダイオードを有する高耐圧半導体装
置は、保護ダイオードをチップ内の高圧電源配線に直接
接続する回路構造を有する。[Prior Art J] Conventionally, a high-voltage semiconductor device having this type of protection diode has a circuit structure in which the protection diode is directly connected to a high-voltage power supply wiring within a chip.
［発明が解決しようとする課題１
しかしながら、上述した従来の高耐圧半導体装置のよう
に、保護ダイオードが高圧電源配線と回路内で直接接続
されている構造であると、回路耐圧にはばらつきがある
ので保護ダイオードのブレークダウン電圧よりも低いチ
ップがロット中に入ってくる場合が生ずる。そのとき、
電源ラインにのったノイズなどの影響を、保護ダイオー
ドを介さず直接素子回路が受けることとなるので、素子
回路が直ちに破壊されるという欠点がある。[Problem to be Solved by the Invention 1] However, if the protection diode is directly connected to the high-voltage power supply wiring in the circuit, as in the conventional high-voltage semiconductor device described above, there will be variations in the circuit breakdown voltage. Therefore, there may be cases where chips with a voltage lower than the breakdown voltage of the protection diode are included in the lot. then,
Since the element circuit is directly affected by noise carried on the power supply line without going through the protective diode, there is a drawback that the element circuit is immediately destroyed.
本発明の目的は、上記の情況に鑑み、保護ダイオードが
内部素子回路を確実に保護し得る結線構造を備えた高耐
圧半導体装置を提供することである。SUMMARY OF THE INVENTION In view of the above circumstances, an object of the present invention is to provide a high voltage semiconductor device having a wiring structure in which a protection diode can reliably protect an internal element circuit.
［課題を解決するための手段］
本発明によれば、高耐圧半導体装置は、−主面上に、高
耐圧素子回路部と、該高耐圧素子回路部の電源保護ダイ
オード部と、前記高耐圧素子回路部の高圧電源配線およ
び電源保護グイ才−ド部の保護ダイオードに対する独立
ボンディングパッドとをそれぞれ形成する半導体チップ
を含んで構成される。[Means for Solving the Problems] According to the present invention, a high voltage semiconductor device includes - on a main surface, a high voltage element circuit section, a power protection diode section of the high voltage element circuit section, and the high voltage semiconductor device. The device includes semiconductor chips forming high-voltage power supply wiring in the element circuit section and independent bonding pads for protection diodes in the power protection guide section.
【 作 用 Ｊ
本発明によれば、素子回路の高圧電源配線と保護ダイオ
ードはチップ上でそれぞれ独立したボンディングパッド
を備え、それぞれの耐圧値が個別に測定された後、回路
耐圧の方が保護ダイオードの耐圧より高いチップのみが
選択され組立てられているので、素子回路が保護ダイオ
ードにより常に保護された高耐圧半導体装置を実現する
ことができる。[Function J] According to the present invention, the high-voltage power supply wiring and the protection diode of the element circuit are provided with independent bonding pads on the chip, and after the withstand voltage values of each are measured individually, it is determined that the circuit withstand voltage is higher than that of the protection diode. Since only chips with a breakdown voltage higher than that of the semiconductor device are selected and assembled, it is possible to realize a high voltage semiconductor device in which the element circuit is always protected by the protection diode.
【実施例］ 次に本発明について図面を参照して詳細に説明する。【Example] Next, the present invention will be explained in detail with reference to the drawings.
第１図は本発明高耐圧半導体装置の一実施例を示すチッ
プの平面図である。本実施例によれば、高耐圧半導体チ
ップ１上には高耐圧素子回路部２の高圧電源配線用およ
び電源保護ダイオード部３の保護ダイオード用ボンディ
ングパッド５および６がそれぞれ独立に設けられる。こ
こで、４は高耐圧素子回路部２および電源保護ダイオー
ド部３に共通なグランド配線用のボンディングパッド、
７はリードフレームの内部リードをそれぞれ示す。FIG. 1 is a plan view of a chip showing an embodiment of the high voltage semiconductor device of the present invention. According to this embodiment, bonding pads 5 and 6 for high-voltage power supply wiring of the high-voltage element circuit section 2 and for protection diodes of the power protection diode section 3 are independently provided on the high-voltage semiconductor chip 1, respectively. Here, 4 is a bonding pad for ground wiring common to the high voltage element circuit section 2 and the power protection diode section 3;
7 indicates the internal leads of the lead frame.
本実施例によると、半導体チップ１の主面上にそれぞれ
独立に形成された高圧電源配線用のボンディングパッド
５および保護ダイオード用のボンディングパッド６とを
それぞれ用いれば、高耐圧素子回路部２の回路耐圧と電
源保護ダイオード部３の耐圧とをパッケージ組立てに先
立ち、チップ状態のままそれぞれ別々に測定することが
可能となる。従って、回路耐圧が保護ダイオードの耐圧
よりも高くなっているチップのみを選択して組立工程に
まわし、逆に回路耐圧が保護ダイオードより低いチップ
であれば直ちに廃棄処分とすることができる。以後は、
このようにして選択されたチップ１のボンディングパッ
ド５．６をリードフレームの内部リード７の一つにボン
ディングワイヤ８を用いて共通接続してパッケージ組立
てするか、または、それぞれの引出しリードをパッケー
ジ組立て後外部で共通接続すれば製品となる。すなわち
、本発明にかかる高耐圧半導体装置のチップ構造は、そ
の生産効率を著しく高めることが可能である。According to this embodiment, if the bonding pad 5 for high-voltage power supply wiring and the bonding pad 6 for protection diode, which are formed independently on the main surface of the semiconductor chip 1, are used, the circuit of the high-voltage element circuit section 2 can be used. It becomes possible to separately measure the breakdown voltage and the breakdown voltage of the power protection diode section 3 in the chip state prior to package assembly. Therefore, only chips whose circuit breakdown voltage is higher than that of the protection diode can be selected and sent to the assembly process, while chips whose circuit breakdown voltage is lower than the protection diode can be immediately disposed of. From then on,
The bonding pads 5 and 6 of the chip 1 selected in this way are commonly connected to one of the internal leads 7 of the lead frame using the bonding wire 8 to assemble the package, or the respective lead leads are assembled into the package. If a common connection is made externally, it becomes a product. That is, the chip structure of the high voltage semiconductor device according to the present invention can significantly improve its production efficiency.
【発明の効果Ｊ
以上詳細に説明したように、本発明によれば、素子回路
の高圧電源配線と保護ダイオードとをチップ上で接続せ
ずそれぞれ独立させることにより、それぞれの耐圧をチ
ップ上で測定し、たえず回路耐圧が保護ダイオードの耐
圧よりも高くなっていることを組立前に確認できるので
、保護ダイオードが働く前に素子回路が破壊またはダメ
ージを受けることなき高耐圧半導体装置を提供すること
ができる。[Effects of the Invention J] As explained in detail above, according to the present invention, the high-voltage power supply wiring and the protection diode of the element circuit are not connected on the chip and are made independent, so that the withstand voltage of each can be measured on the chip. However, since it is possible to constantly confirm before assembly that the circuit withstand voltage is higher than the withstand voltage of the protection diode, it is possible to provide a high voltage semiconductor device in which the element circuit is not destroyed or damaged before the protection diode is activated. can.
第１図は本発明高耐圧半導体装置の一実施例を示すチッ
プの平面図である。
ｌ・・・高耐圧半導体チップ、
２・・・高耐圧素子回路部、
３・・・電源保護ダイオード部、
４・−・グランド配線用ボンディングパッド、５−・・
高圧電源配線用ボンディングパッド、６・・・保護ダイ
オード用ボンディングパッド、７・・・（リードフレー
ムの）内部リード、８・・−ボンディングワイヤ。FIG. 1 is a plan view of a chip showing an embodiment of the high voltage semiconductor device of the present invention. l... High voltage semiconductor chip, 2... High voltage element circuit section, 3... Power protection diode section, 4... Bonding pad for ground wiring, 5-...
Bonding pad for high voltage power supply wiring, 6... Bonding pad for protection diode, 7... Internal lead (of lead frame), 8... - Bonding wire.
Claims (1)
の電源保護ダイオード部と、前記高耐圧素子回路部の高
圧電源配線および電源保護ダイオード部の保護ダイオー
ドに対する独立ボンディングパッドとをそれぞれ形成す
る半導体チップを含むことを特徴とする高耐圧半導体装
置。A high-voltage element circuit section, a power protection diode section of the high-voltage element circuit section, and an independent bonding pad for the high-voltage power wiring of the high-voltage element circuit section and the protection diode of the power protection diode section are provided on one main surface. A high-voltage semiconductor device comprising semiconductor chips formed respectively.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1333513A JPH03194961A (en) | 1989-12-22 | 1989-12-22 | High withstand voltage semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1333513A JPH03194961A (en) | 1989-12-22 | 1989-12-22 | High withstand voltage semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03194961A true JPH03194961A (en) | 1991-08-26 |
Family
ID=18266884
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1333513A Pending JPH03194961A (en) | 1989-12-22 | 1989-12-22 | High withstand voltage semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03194961A (en) |
-
1989
- 1989-12-22 JP JP1333513A patent/JPH03194961A/en active Pending
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