JPS62166588A - Semiconductor laser - Google Patents
Semiconductor laserInfo
- Publication number
- JPS62166588A JPS62166588A JP1037786A JP1037786A JPS62166588A JP S62166588 A JPS62166588 A JP S62166588A JP 1037786 A JP1037786 A JP 1037786A JP 1037786 A JP1037786 A JP 1037786A JP S62166588 A JPS62166588 A JP S62166588A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor laser
- capacitor
- chip
- laser chip
- current
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Semiconductor Lasers (AREA)
Abstract
Description
【発明の詳細な説明】
〈産業上の利用分野〉
本発明は、半導体レーザ装置、特にその保護構造に関す
る。DETAILED DESCRIPTION OF THE INVENTION <Industrial Application Field> The present invention relates to a semiconductor laser device, and particularly to a protective structure thereof.
〈発明の概要〉
本発明は、半導体レーザチップをマウントしてあるパッ
ケージ内のヒートシンクに、コンテンサ気やサージ電流
等から保護するものである。<Summary of the Invention> The present invention protects a heat sink in a package in which a semiconductor laser chip is mounted from condensate air, surge current, and the like.
〈従来の技術〉
従来の半導体レーザ装置は第2図に示すように、パッケ
ージ内のヒートシンク1及びステム2上に半導体レーザ
チップ3及び半導体レーザチップ3からの光出力をモニ
ターするフォトダイオードチップ4をマウントした構造
になっていた。<Prior Art> As shown in FIG. 2, a conventional semiconductor laser device includes a semiconductor laser chip 3 and a photodiode chip 4 for monitoring the optical output from the semiconductor laser chip 3 on a heat sink 1 and a stem 2 in a package. It had a mounted structure.
〈発明が解決しようとする問題点〉
しかし、半導体レーザチップ3は1(GHz)以上の高
速応答性をもっているが、逆にそのために規定の光出力
を出すための電流より、少しでも多くの電流を一瞬でも
流すと、自分自身の光出力により、半導体レーザチップ
3の端面を破壊してしまう。このように、半導体レーザ
チップ3は静電気及び外来ノイズを含むサージ電流に対
し槙端に弱く、半導体レーザ装置の取り扱いはC−MO
8LSI以上に慎重に行なわなければならなかった。<Problem to be solved by the invention> However, although the semiconductor laser chip 3 has a high-speed response of 1 (GHz) or more, it conversely requires a current that is even slightly larger than the current required to output the specified optical output. If it flows for even a moment, the end face of the semiconductor laser chip 3 will be destroyed by its own optical output. As described above, the semiconductor laser chip 3 is extremely vulnerable to surge currents including static electricity and external noise, and the semiconductor laser device should be handled by C-MO.
I had to be more careful than with the 8LSI.
本発明は、上記点に鑑みてなされたものであり静電気及
びサージ電流から半導体レーザチップ3を保護すること
を目的とする。The present invention has been made in view of the above points, and an object of the present invention is to protect the semiconductor laser chip 3 from static electricity and surge current.
〈問題点を解決するだめの手段〉
本発明は、半導体レーザチップをマウントしてあるパッ
ケージ内のヒートシンクにコンデンサあるいはそれと同
等の働きを有する素子を半導体レーザチップと電気的に
並列になるようにマウントした構造とする。<Means for solving the problem> The present invention mounts a capacitor or an element having an equivalent function to a heat sink in a package in which a semiconductor laser chip is mounted so that it is electrically parallel to the semiconductor laser chip. The structure is as follows.
く作 用〉
上記構造により、静電気やサージ電流等の過大電流はコ
ンデンサ等に吸収されるので半導体レーザチップに負担
がかからなくなる。Effects> With the above structure, excessive currents such as static electricity and surge currents are absorbed by the capacitor, etc., so that no burden is placed on the semiconductor laser chip.
〈実施例〉 第1図(a) 、 (b)に本発明の一実施例を示す。<Example> An embodiment of the present invention is shown in FIGS. 1(a) and 1(b).
第1図(a) 、 (b)に示すように、半導体レーザ
装置のパッケージ内に、高速応答性をもったチップコン
デンサ5をヒートシンク1にマウントし、半導体レーザ
チップ3に電流を供給するワイヤー線6と並列にコンデ
ンサ5の電極にもワイヤー線6を接続し、半導体レーザ
チップ3とコンデンサ5が電気的に並列になるようにす
る。As shown in FIGS. 1(a) and 1(b), a chip capacitor 5 with high-speed response is mounted on a heat sink 1 within the package of the semiconductor laser device, and a wire line that supplies current to the semiconductor laser chip 3 is mounted inside the package of the semiconductor laser device. A wire line 6 is also connected to the electrode of the capacitor 5 in parallel with the semiconductor laser chip 3 and the capacitor 5 so that the semiconductor laser chip 3 and the capacitor 5 are electrically parallel to each other.
このようにマウントすると、半導体レーザチップ3にか
かった静電気及びサージ電流等の過大電流はコンデンサ
5側にもかかり、ある程度の過大電流はコンデンサ5に
吸収されてしまい、半導体レーザチップ3に負担がかか
らなくなる。When mounted in this manner, excessive current such as static electricity and surge current applied to the semiconductor laser chip 3 is also applied to the capacitor 5, and a certain amount of excessive current is absorbed by the capacitor 5, which places a burden on the semiconductor laser chip 3. It disappears.
半導体レーザチップ3とコンデンサ5の配線を第1図(
b)のようにすると、ワイヤー線6がコイルの役目をも
ち、電気的に等価なリアクタンス成分が入いるので、よ
り効果的である。The wiring between the semiconductor laser chip 3 and the capacitor 5 is shown in Figure 1 (
Option b) is more effective because the wire 6 acts as a coil and contains an electrically equivalent reactance component.
〈発明の効果〉
以上のように本発明によれば、過大電流がコンデンサに
吸収されるので、半導体レーザ装置全体を、サージ電流
や静電気に強い、より取り扱いやすく、かつ信頼性の高
い半導体レーザ装置を提供できる。<Effects of the Invention> As described above, according to the present invention, excessive current is absorbed by the capacitor, making the entire semiconductor laser device resistant to surge currents and static electricity, easier to handle, and more reliable. can be provided.
第1図(a) 、 (b)は本発明の一実施例を示す斜
視図、第2図は従来例を示す斜視図である。
1・・ヒートシンク、3・・・半導体レーザチップ、5
・・・コンデンサ。
第2図FIGS. 1(a) and 1(b) are perspective views showing one embodiment of the present invention, and FIG. 2 is a perspective view showing a conventional example. 1... Heat sink, 3... Semiconductor laser chip, 5
...Capacitor. Figure 2
Claims (1)
内のヒートシンクに、コンデンサあるいはコンデンサと
同等の働きを有する素子を半導体レーザチップと電気的
に並列にマウントしたことを特徴とする半導体レーザ装
置。1. A semiconductor laser device characterized in that a capacitor or an element having the same function as a capacitor is mounted electrically in parallel with the semiconductor laser chip on a heat sink in a package in which the semiconductor laser chip is mounted.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1037786A JPS62166588A (en) | 1986-01-20 | 1986-01-20 | Semiconductor laser |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1037786A JPS62166588A (en) | 1986-01-20 | 1986-01-20 | Semiconductor laser |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS62166588A true JPS62166588A (en) | 1987-07-23 |
Family
ID=11748440
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1037786A Pending JPS62166588A (en) | 1986-01-20 | 1986-01-20 | Semiconductor laser |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS62166588A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006013551A (en) * | 2002-03-25 | 2006-01-12 | Sanyo Electric Co Ltd | Semiconductor laser apparatus |
US7280572B2 (en) | 2002-03-25 | 2007-10-09 | Sanyo Electric Co., Ltd. | Semiconductor laser beam device |
WO2018207518A1 (en) * | 2017-05-11 | 2018-11-15 | シャープ株式会社 | Semiconductor laser device |
JP2018195728A (en) * | 2017-05-18 | 2018-12-06 | 新光電気工業株式会社 | Stem for light-emitting element, and optical semiconductor device |
-
1986
- 1986-01-20 JP JP1037786A patent/JPS62166588A/en active Pending
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006013551A (en) * | 2002-03-25 | 2006-01-12 | Sanyo Electric Co Ltd | Semiconductor laser apparatus |
US7280572B2 (en) | 2002-03-25 | 2007-10-09 | Sanyo Electric Co., Ltd. | Semiconductor laser beam device |
US7889770B2 (en) | 2002-03-25 | 2011-02-15 | Sanyo Electric Co., Ltd. | Semiconductor laser device |
WO2018207518A1 (en) * | 2017-05-11 | 2018-11-15 | シャープ株式会社 | Semiconductor laser device |
US11070024B2 (en) | 2017-05-11 | 2021-07-20 | Sharp Kabushiki Kaisha | Semiconductor laser device |
JP2018195728A (en) * | 2017-05-18 | 2018-12-06 | 新光電気工業株式会社 | Stem for light-emitting element, and optical semiconductor device |
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