JPH05198608A - Method and device for sealing semiconductor element - Google Patents

Method and device for sealing semiconductor element

Info

Publication number
JPH05198608A
JPH05198608A JP3254992A JP3254992A JPH05198608A JP H05198608 A JPH05198608 A JP H05198608A JP 3254992 A JP3254992 A JP 3254992A JP 3254992 A JP3254992 A JP 3254992A JP H05198608 A JPH05198608 A JP H05198608A
Authority
JP
Japan
Prior art keywords
sealing
substrate
semiconductor element
resin
heating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3254992A
Other languages
Japanese (ja)
Other versions
JP2990920B2 (en
Inventor
Takuya Konno
卓哉 今野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Chemi Con Corp
Original Assignee
Nippon Chemi Con Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Chemi Con Corp filed Critical Nippon Chemi Con Corp
Priority to JP4032549A priority Critical patent/JP2990920B2/en
Publication of JPH05198608A publication Critical patent/JPH05198608A/en
Application granted granted Critical
Publication of JP2990920B2 publication Critical patent/JP2990920B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Abstract

PURPOSE:To eliminate a gnard ring by selectively heating the sealing area of a semiconductor element and sealing the semiconductor element by softened sealing resin. CONSTITUTION:A wire bonded substrate 2 before sealing is placed on a placing table 18 and is kept at the prescribed temperature with a heater 24 for the prescribed time. As a result, only the sealing range 28 of the substrate 2 is selectively heated by a heating part 20. As for the sealing range 28 of the substrate 2, which is kept in the heated condition, softened flowing sealing resin 30 is applied by the suitable quantity by a dispenser 32 which is a resin supplying means. Since the sealing range 28 of the substrate 2 is heated to the suitable temperature, the applied sealing resin 30 is heated and the flowability is maintained and accelerated. Then, the resin 30 is made to flow into the sealing range 28 suitably and sealing is performed. Thus, the production cost is reduced.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、ベアチップ等の半導体
素子の樹脂封止に用いられる、半導体素子の封止方法及
びその装置に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor element encapsulation method and apparatus used for resin encapsulation of semiconductor elements such as bare chips.

【0002】従来、混成集積回路装置では、基板上にベ
アチップが設置され、その上から封止樹脂が基板上に設
置されて樹脂封止する方法が取られている。このような
樹脂封止では、封止樹脂の流動性が封止の信頼性に大き
く影響を与えるものである。封止樹脂を加熱して極端に
液化状態にすると、流動性が良好になるが、基板上に供
給された際に流れて適当な塊状態が得られないため、必
要な封止状態を実現することができない。即ち、適当な
チクソ性が必要である。
Conventionally, in a hybrid integrated circuit device, a bare chip is placed on a substrate and a sealing resin is placed on the bare chip to perform resin sealing. In such a resin encapsulation, the fluidity of the encapsulating resin greatly affects the reliability of the encapsulation. If the encapsulating resin is heated to an extremely liquefied state, the fluidity will be good, but when it is supplied onto the substrate, it will flow and an appropriate lump state will not be obtained, so the required encapsulating state will be realized. I can't. That is, proper thixotropy is required.

【0003】ところが、塊状態を高めるために流動性を
低下させてしまうと、その分だけ基板上での流れが悪
く、これも封止状態の悪化を生じさせる。このため、基
板全体を加熱し、適当な加熱温度に維持された基板上に
封止樹脂を供給する方法があるが、基板を適当な温度、
即ち、実装された各種の部品の特性を劣化させない温度
で封止樹脂に適当な流動性を与えるための温度に設定す
ることは、非常に困難である。許容温度は部品毎に異な
っており、総てを満足させる温度範囲は極めて狭く、そ
のための温度条件を吟味しての温度制御は困難である。
However, if the fluidity is lowered in order to enhance the lump state, the flow on the substrate will be worse by that much, which also causes deterioration of the sealed state. Therefore, there is a method of heating the entire substrate and supplying the sealing resin on the substrate maintained at an appropriate heating temperature.
That is, it is extremely difficult to set the temperature at which the sealing resin is provided with appropriate fluidity at a temperature that does not deteriorate the characteristics of various mounted components. The allowable temperature differs for each part, and the temperature range that satisfies all of them is extremely narrow, and it is difficult to control the temperature by examining the temperature conditions therefor.

【0004】また、従来、流動性の高い封止樹脂を用い
る場合や過剰な流動性を持つ場合には、封止すべき素子
の周囲に流れ止めとしてのガードリングを設置する方法
が取られているが、このような方法は、ガードリンドを
設置する工程やガードリングの硬化工程が必要となり、
製造工数の増加が製造コストの増大を招くという欠点が
ある。
Further, conventionally, when a highly fluid sealing resin is used or has an excessive fluidity, a method of installing a guard ring as a flow stop around the element to be sealed has been adopted. However, such a method requires a step of installing a guard ring and a step of hardening the guard ring,
There is a drawback in that an increase in manufacturing man-hour causes an increase in manufacturing cost.

【0005】そこで、本発明は、選択的に基板を加熱し
て樹脂封止を可能にした半導体素子の封止方法及びその
装置を提供することを目的とする。
Therefore, it is an object of the present invention to provide a semiconductor element encapsulation method and apparatus in which a substrate is selectively heated to enable resin encapsulation.

【0006】[0006]

【課題を解決するための手段】本発明の半導体素子の封
止方法は、封止すべき半導体素子(ベアチップ4)が実
装された基板(2)の前記半導体素子の封止範囲(2
8)を選択的に加熱した後、前記半導体素子を軟化状態
の封止樹脂(30)で封止することを特徴とする。
According to a method of sealing a semiconductor element of the present invention, a semiconductor element sealing range (2) of a substrate (2) on which a semiconductor element (bare chip 4) to be sealed is mounted.
After selectively heating (8), the semiconductor element is sealed with a sealing resin (30) in a softened state.

【0007】また、本発明の半導体素子の封止装置は、
封止すべき半導体素子(ベアチップ4)が実装された基
板(2)の載置台(18)に熱伝導率の高い材質で形成
された加熱部(20)を形成し、この加熱部を通して前
記半導体素子の封止範囲(28)における前記基板を選
択的に加熱することを特徴とする。
The semiconductor element sealing device of the present invention is
A heating unit (20) made of a material having high thermal conductivity is formed on a mounting table (18) of a substrate (2) on which a semiconductor element (bare chip 4) to be sealed is mounted, and the semiconductor is passed through this heating unit. It is characterized in that the substrate in the device encapsulation range (28) is selectively heated.

【0008】[0008]

【作用】半導体素子の封止範囲における基板を選択的に
加熱することとしたので、封止樹脂が供給される部分が
適当な温度に保持され、封止樹脂の流動性を助長させる
ことができる。即ち、基板全体を加熱する場合に比較
し、加熱温度条件が緩やかになり、加熱がしやすく、他
の部品の特性劣化が防止できる。また、チクソ性の高い
封止樹脂を用いても、基板側の加熱によって適当な流動
性が得られて封止樹脂は加熱部分の付近で所定の範囲に
拡がるが、加熱部分は選択的に設定されているので、そ
の周囲の非加熱部分で封止樹脂の拡がりが防止でき、封
止樹脂の設置範囲をガードリング等の対策を要せずに適
当な範囲に制御できる。
Since the substrate in the sealing range of the semiconductor element is selectively heated, the portion to which the sealing resin is supplied is maintained at an appropriate temperature, and the fluidity of the sealing resin can be promoted. . That is, as compared with the case where the entire substrate is heated, the heating temperature condition becomes gentle, the heating is easy, and the characteristic deterioration of other parts can be prevented. Even if a sealing resin with high thixotropy is used, appropriate fluidity is obtained by heating the substrate side and the sealing resin spreads to a predetermined range near the heated portion, but the heated portion is selectively set. Therefore, the encapsulation resin can be prevented from spreading in the non-heated portion around it, and the installation range of the encapsulation resin can be controlled to an appropriate range without taking measures such as a guard ring.

【0009】また、封止処理すべき基板を載置する載置
台に選択的に、即ち、加熱を必要とする部分に対応して
加熱部を設定し、この加熱部に熱伝導度の高い材質を使
用し、加熱することで、選択的に基板の加熱を行うこと
ができる。不要な箇所への加熱及び封止樹脂の必要以上
の拡がりが防止でき、回路装置の信頼性の低下を防止で
きる。特に、加熱部が選択的に形成されていて、加熱部
の周囲に非加熱部、即ち、低温部があるため、その低温
部で封止樹脂の拡がりが抑えられるので、拡がり防止の
ためのガードリングの不要化が期待できる。
Further, a heating section is selectively set on a mounting table on which a substrate to be sealed is mounted, that is, a heating section is set corresponding to a section requiring heating, and the heating section is made of a material having high thermal conductivity. By using and heating, the substrate can be selectively heated. It is possible to prevent heating to undesired locations and to prevent the sealing resin from spreading more than necessary, and to prevent the reliability of the circuit device from decreasing. In particular, since the heating part is selectively formed and there is a non-heating part, that is, a low temperature part around the heating part, the expansion of the sealing resin is suppressed at the low temperature part, so a guard for preventing the expansion. It can be expected that the ring becomes unnecessary.

【0010】[0010]

【実施例】以下、本発明の半導体素子の封止方法及びそ
の装置を図面に示した実施例を参照して詳細に説明す
る。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A semiconductor element encapsulation method and apparatus according to the present invention will be described in detail below with reference to the embodiments shown in the drawings.

【0011】図1ないし図5は、本発明の半導体素子の
封止方法及びその装置の一実施例を示している。ガラス
エポキシ樹脂(又はアルミナ)等の絶縁材料で形成され
た基板2の表面には、図2に示すように、所定の位置に
封止すべき半導体素子としてベアチップ4が設置され、
このベアチップ4は半導体基板2上に絶縁性又は導電性
を持つ接着剤6を以て固定されている。そして、このベ
アチップ4の周囲部における基板2の表面には導体パタ
ーン8が形成され、各導体パターン8は、例えばCu導
体で形成されている。そして、この導体パターン8の表
面は、その一部を露出させて絶縁層としてソルダーレジ
スト10で覆われている。また、ベアチップ4の電極1
4と所定の導体パターン8との間には導体ワイヤ16が
接続され、所定の電気的な接続が行われている。導体ワ
イヤ16には例えば金線が用いられており、この導体ワ
イヤ16と導体パターン6との接続を行うため、導体パ
ターン6の接続部には例えば、ニッケル及び金を積層し
て成る接続用パッド17が形成されている。
1 to 5 show an embodiment of a method for encapsulating a semiconductor element and an apparatus therefor according to the present invention. As shown in FIG. 2, a bare chip 4 is installed as a semiconductor element to be sealed at a predetermined position on the surface of the substrate 2 formed of an insulating material such as glass epoxy resin (or alumina).
The bare chip 4 is fixed on the semiconductor substrate 2 with an adhesive 6 having an insulating property or a conductive property. Then, a conductor pattern 8 is formed on the surface of the substrate 2 in the peripheral portion of the bare chip 4, and each conductor pattern 8 is formed of, for example, a Cu conductor. The surface of the conductor pattern 8 is partially exposed and covered with a solder resist 10 as an insulating layer. Also, the electrode 1 of the bare chip 4
A conductor wire 16 is connected between the wire 4 and the predetermined conductor pattern 8 to make a predetermined electrical connection. For example, a gold wire is used as the conductor wire 16, and in order to connect the conductor wire 16 and the conductor pattern 6, for example, a connection pad formed by stacking nickel and gold on the connection portion of the conductor pattern 6. 17 are formed.

【0012】そして、この基板2に対する封止作業を行
うための封止装置としての載置台18が用いられる。こ
の載置台18は加熱台を兼ねており、図3に示すよう
に、基板2の封止範囲28を加熱範囲とする加熱部20
を備えている。この実施例の載置台18は、熱伝導率の
低い低加熱部22と熱伝導率の高い加熱部20とから成
っており、低加熱部22はフェノール樹脂、エポキシ樹
脂、PTFE等の耐熱性有機材料等やその他の絶縁材
料、加熱部20は銅等の熱伝導率の高い材質で形成され
ている。即ち、載置台18には基板2の加熱部分の範囲
及び位置に対応する透孔23が形成され、この透孔23
に隙間25を設けて加熱部20が設置されている。この
実施例では、透孔23は加熱部分を包囲する円孔を成し
ている。そして、この載置台18の下面部、即ち、加熱
部20の下面には加熱手段としてヒータ24が設置さ
れ、このヒータ24は適当な温度制御手段を備えた電源
26に接続されて給電されている。
A mounting table 18 is used as a sealing device for performing a sealing operation on the substrate 2. The mounting table 18 also serves as a heating table, and as shown in FIG. 3, a heating unit 20 having a sealing range 28 of the substrate 2 as a heating range.
Is equipped with. The mounting table 18 of this embodiment comprises a low heating section 22 having a low thermal conductivity and a heating section 20 having a high thermal conductivity, and the low heating section 22 is made of a heat resistant organic material such as phenol resin, epoxy resin, or PTFE. The material, other insulating material, and the heating unit 20 are formed of a material having high thermal conductivity such as copper. That is, a through hole 23 corresponding to the range and position of the heated portion of the substrate 2 is formed on the mounting table 18, and the through hole 23 is formed.
The heating unit 20 is installed with a gap 25 provided in the space. In this embodiment, the through holes 23 are circular holes that surround the heating portion. A heater 24 is installed as a heating unit on the lower surface of the mounting table 18, that is, the lower surface of the heating unit 20, and the heater 24 is connected to a power source 26 equipped with an appropriate temperature control unit to supply power. .

【0013】そこで、ワイヤボンディングを完了した封
止前の基板2を、ヒータ24に通電して所定温度に維持
された載置台18に所定時間だけ載置する。その結果、
加熱部20を以て基板2の封止範囲28のみが選択的に
加熱される。
Therefore, the substrate 2 which has been wire-bonded and has not been sealed is placed on the placing table 18 which is kept at a predetermined temperature by energizing the heater 24 for a predetermined time. as a result,
Only the sealing area 28 of the substrate 2 is selectively heated by the heating unit 20.

【0014】次に、図4に示すように、加熱状態に維持
されている基板2の封止範囲28に対し、軟化して流動
状態にある封止樹脂30をその供給手段であるディスペ
ンサ32を以て適量だけ供給する。基板2の封止範囲2
8は適当な温度に加熱されているため、供給された封止
樹脂30は加熱されて流動性が維持、助長されて封止範
囲28に適当に流れ、図5に示すように、樹脂封止が行
われる。
Next, as shown in FIG. 4, with respect to the sealing region 28 of the substrate 2 which is maintained in the heated state, the sealing resin 30 which is in a softened and fluidized state is supplied by a dispenser 32 which is a supply means thereof. Supply only appropriate amount. Substrate 2 sealing range 2
Since 8 is heated to an appropriate temperature, the supplied sealing resin 30 is heated to maintain and promote the fluidity and appropriately flow into the sealing range 28, and as shown in FIG. Is done.

【0015】このように基板2の封止範囲28のみを選
択的に加熱することで、封止樹脂30の流動性を維持、
助長することができ、効率的な樹脂封止が行える。特
に、封止範囲20が適当な温度に加熱されることを見越
して封止樹脂30は流動性の低い、即ち、チクソ性の高
い樹脂を用いることができ、必要以上の流動性を設定す
る必要がない。
By selectively heating only the sealing area 28 of the substrate 2 in this manner, the fluidity of the sealing resin 30 is maintained,
It can be promoted and efficient resin sealing can be performed. In particular, it is possible to use a resin having low fluidity, that is, a resin having high thixotropy, in view of heating the sealing range 20 to an appropriate temperature, and it is necessary to set fluidity more than necessary. There is no.

【0016】また、基板2の封止範囲28のみを選択的
に加熱することで、不要な加熱を防止でき、過熱から他
の素子を保護することができ、加熱による回路装置の信
頼性の低下を未然に防止することができる。
Further, by selectively heating only the sealing area 28 of the substrate 2, unnecessary heating can be prevented, other elements can be protected from overheating, and the reliability of the circuit device due to heating is lowered. Can be prevented in advance.

【0017】そして、封止装置としての載置台18は加
熱部20と低加熱部22とから成る極めて簡単な構成で
あり、選択的に形成された加熱部20を以て所定範囲の
みを選択的に加熱範囲を設定しており、基板2の加熱す
べき範囲、即ち、封止範囲28を効果的に加熱すること
ができる。
The mounting table 18 as a sealing device has an extremely simple structure including a heating section 20 and a low heating section 22, and selectively heats only a predetermined range by the heating section 20 which is selectively formed. The range is set, and the range to be heated of the substrate 2, that is, the sealing range 28 can be effectively heated.

【0018】なお、実施例では、加熱部20に対して温
度差を設定するために、低加熱部22を設定したが、こ
の低加熱部22を非加熱部に設定し、この低加熱部22
に冷却水を循環させることにより冷却させ、基板2の加
熱部分に対して非加熱部分の温度上昇を抑制するように
してもよい。
In the embodiment, the low heating portion 22 is set to set the temperature difference with respect to the heating portion 20, but the low heating portion 22 is set to the non-heating portion and the low heating portion 22 is set.
The cooling water may be circulated to cool the substrate 2 to suppress the temperature rise of the non-heated portion of the substrate 2.

【0019】[0019]

【発明の効果】以上説明したように、本発明によれば、
次の効果が得られる。 a.基板上で封止樹脂の流動性を高めることができ、封
止範囲以外の過熱を防止でき、回路装置の信頼性を高め
ることができる。また、加熱条件を適当に設定すること
で封止樹脂の流動性を制御できるので、従来のガードリ
ング等の対策が不要となり、製造コストの低減を図るこ
とができる。 b.基板の封止範囲を選択的に効率よく加熱でき、基板
の不要箇所の過熱を防止でき、過熱による回路装置の信
頼性低下を防止できる。
As described above, according to the present invention,
The following effects are obtained. a. The fluidity of the sealing resin can be increased on the substrate, overheating outside the sealing range can be prevented, and the reliability of the circuit device can be increased. In addition, since the fluidity of the sealing resin can be controlled by appropriately setting the heating conditions, the conventional measures such as guard rings are unnecessary, and the manufacturing cost can be reduced. b. It is possible to selectively and efficiently heat the sealing area of the substrate, prevent unnecessary heating of the substrate, and prevent deterioration of reliability of the circuit device due to overheating.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の半導体素子の封止方法及びその装置の
一実施例を示す縦断面図である。
FIG. 1 is a vertical cross-sectional view showing an embodiment of a semiconductor element sealing method and apparatus of the present invention.

【図2】封止すべき半導体素子が実装された基板を示す
縦断面図である。
FIG. 2 is a vertical sectional view showing a substrate on which a semiconductor element to be sealed is mounted.

【図3】載置台の過熱部を示す平面図である。FIG. 3 is a plan view showing an overheated portion of the mounting table.

【図4】基板上の半導体素子に対する樹脂封止を示す縦
断面図である。
FIG. 4 is a vertical cross-sectional view showing resin sealing of a semiconductor element on a substrate.

【図5】樹脂封止が施された基板を示す混成集積回路装
置の縦断面図である。
FIG. 5 is a vertical sectional view of a hybrid integrated circuit device showing a resin-sealed substrate.

【符号の説明】[Explanation of symbols]

2 基板 4 ベアチップ(半導体素子) 18 載置台 20 加熱部 28 封止範囲 30 封止樹脂 2 substrate 4 bare chip (semiconductor element) 18 mounting table 20 heating unit 28 sealing range 30 sealing resin

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 封止すべき半導体素子が実装された基板
の前記半導体素子の封止範囲を選択的に加熱した後、前
記半導体素子を軟化状態の封止樹脂で封止することを特
徴とする半導体素子の封止方法。
1. The semiconductor element is sealed with a softened sealing resin after selectively heating a sealing area of the semiconductor element of a substrate on which a semiconductor element to be sealed is mounted. Method for encapsulating a semiconductor element.
【請求項2】 封止すべき半導体素子が実装された基板
の載置台に熱伝導率の高い材質で形成された加熱部を形
成し、この加熱部を通して前記半導体素子の封止範囲に
おける前記基板を選択的に加熱することを特徴とする半
導体素子の封止装置。
2. A heating unit made of a material having a high thermal conductivity is formed on a mounting table of a substrate on which a semiconductor element to be sealed is mounted, and the substrate in the sealing range of the semiconductor element is passed through the heating unit. A device for sealing a semiconductor element, which selectively heats.
JP4032549A 1992-01-22 1992-01-22 Semiconductor device sealing device Expired - Fee Related JP2990920B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4032549A JP2990920B2 (en) 1992-01-22 1992-01-22 Semiconductor device sealing device

Applications Claiming Priority (1)

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JP4032549A JP2990920B2 (en) 1992-01-22 1992-01-22 Semiconductor device sealing device

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JPH05198608A true JPH05198608A (en) 1993-08-06
JP2990920B2 JP2990920B2 (en) 1999-12-13

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002359258A (en) * 2001-03-26 2002-12-13 Denso Corp Method for mounting electronic component
EP1256387A3 (en) * 1995-10-13 2006-03-22 Nordson Corporation Flip chip underfill system and method
JP2009206179A (en) * 2008-02-26 2009-09-10 Nec Electronics Corp Device and method for manufacturing semiconductor device
JP2011009508A (en) * 2009-06-26 2011-01-13 Citizen Holdings Co Ltd Led light source device and method of manufacturing the same
CN106505043A (en) * 2015-09-08 2017-03-15 株式会社东芝 The manufacture method and manufacture device of semiconductor device

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1256387A3 (en) * 1995-10-13 2006-03-22 Nordson Corporation Flip chip underfill system and method
JP2002359258A (en) * 2001-03-26 2002-12-13 Denso Corp Method for mounting electronic component
JP2009206179A (en) * 2008-02-26 2009-09-10 Nec Electronics Corp Device and method for manufacturing semiconductor device
JP2011009508A (en) * 2009-06-26 2011-01-13 Citizen Holdings Co Ltd Led light source device and method of manufacturing the same
CN106505043A (en) * 2015-09-08 2017-03-15 株式会社东芝 The manufacture method and manufacture device of semiconductor device
JP2017054879A (en) * 2015-09-08 2017-03-16 株式会社東芝 Method and device of manufacturing semiconductor device
CN106505043B (en) * 2015-09-08 2019-05-03 东芝存储器株式会社 The manufacturing method and manufacturing device of semiconductor device

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