JP2990920B2 - Semiconductor device sealing device - Google Patents

Semiconductor device sealing device

Info

Publication number
JP2990920B2
JP2990920B2 JP4032549A JP3254992A JP2990920B2 JP 2990920 B2 JP2990920 B2 JP 2990920B2 JP 4032549 A JP4032549 A JP 4032549A JP 3254992 A JP3254992 A JP 3254992A JP 2990920 B2 JP2990920 B2 JP 2990920B2
Authority
JP
Japan
Prior art keywords
sealing
heating
substrate
resin
heated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP4032549A
Other languages
Japanese (ja)
Other versions
JPH05198608A (en
Inventor
卓哉 今野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Chemi Con Corp
Original Assignee
Nippon Chemi Con Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Chemi Con Corp filed Critical Nippon Chemi Con Corp
Priority to JP4032549A priority Critical patent/JP2990920B2/en
Publication of JPH05198608A publication Critical patent/JPH05198608A/en
Application granted granted Critical
Publication of JP2990920B2 publication Critical patent/JP2990920B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【産業上の利用分野】本発明は、ベアチップ等の半導体
素子の樹脂封止に用いられる、半導体素子の封止装置に
関する。
The present invention relates are used in the resin encapsulation of a semiconductor element such as a bare chip, to seal TomeSo location of the semiconductor device.

【0002】従来、混成集積回路装置では、基板上にベ
アチップが設置され、その上から封止樹脂が基板上に設
置されて樹脂封止する方法が取られている。このような
樹脂封止では、封止樹脂の流動性が封止の信頼性に大き
く影響を与えるものである。封止樹脂を加熱して極端に
液化状態にすると、流動性が良好になるが、基板上に供
給された際に流れて適当な塊状態が得られないため、必
要な封止状態を実現することができない。即ち、適当な
チクソ性が必要である。
Conventionally, in a hybrid integrated circuit device, a method has been adopted in which a bare chip is installed on a substrate, and a sealing resin is installed on the substrate from above, and the resin is sealed. In such resin sealing, the fluidity of the sealing resin greatly affects the reliability of the sealing. When the sealing resin is heated to an extremely liquefied state, the fluidity is improved, but when the resin is supplied onto the substrate, it flows and an appropriate lump state cannot be obtained, thereby realizing a necessary sealing state. Can not do. That is, appropriate thixotropy is required.

【0003】ところが、塊状態を高めるために流動性を
低下させてしまうと、その分だけ基板上での流れが悪
く、これも封止状態の悪化を生じさせる。このため、基
板全体を加熱し、適当な加熱温度に維持された基板上に
封止樹脂を供給する方法があるが、基板を適当な温度、
即ち、実装された各種の部品の特性を劣化させない温度
で封止樹脂に適当な流動性を与えるための温度に設定す
ることは、非常に困難である。許容温度は部品毎に異な
っており、総てを満足させる温度範囲は極めて狭く、そ
のための温度条件を吟味しての温度制御は困難である。
However, if the fluidity is reduced in order to increase the lump state, the flow on the substrate is correspondingly poor, which also causes the sealing state to deteriorate. For this reason, there is a method of heating the entire substrate and supplying a sealing resin onto the substrate maintained at an appropriate heating temperature.
That is, it is very difficult to set the temperature at which the characteristics of the various mounted components are not degraded so as to give the sealing resin an appropriate fluidity. The allowable temperature differs for each part, and the temperature range that satisfies all conditions is extremely narrow, and it is difficult to control the temperature by examining the temperature conditions therefor.

【0004】また、従来、流動性の高い封止樹脂を用い
る場合や過剰な流動性を持つ場合には、封止すべき素子
の周囲に流れ止めとしてのガードリングを設置する方法
が取られているが、このような方法は、ガードリンドを
設置する工程やガードリングの硬化工程が必要となり、
製造工数の増加が製造コストの増大を招くという欠点が
ある。
Conventionally, when a sealing resin having a high fluidity is used or when there is an excessive fluidity, a method of installing a guard ring as a flow stopper around an element to be sealed has been adopted. However, such a method requires a step of installing a guard ring and a step of curing a guard ring,
There is a disadvantage that an increase in the number of manufacturing steps causes an increase in the manufacturing cost.

【0005】そこで、本発明は、基板を選択的に加熱し
て樹脂封止を可能にした半導体素子の封止装置を提供す
ることを目的とする。
SUMMARY OF THE INVENTION It is an object of the present invention to provide a semiconductor device sealing device in which a substrate is selectively heated to enable resin sealing.

【0006】[0006]

【0007】[0007]

【課題を解決するための手段】本発明の半導体素子の封
止装置は、封止すべき半導体素子(ベアチップ4)が実
装された基板(2)の載置台(18)に熱伝導率の高い
材質で形成された加熱部(20)と、この加熱部の周囲
に隙間を設けて熱伝導率の低い材質で形成された低加熱
部(22)と、前記加熱部の下面に設置するヒータ(2
4)とを備えて、前記ヒータ(24)による前記加熱部
の加熱により、前記基板の前記半導体素子の封止範囲
(28)を選択して、局所的に加熱して封止することを
特徴とする。
According to the present invention, there is provided an apparatus for sealing a semiconductor device having a high thermal conductivity on a mounting table (18) of a substrate (2) on which a semiconductor device (bare chip 4) to be sealed is mounted. A heating unit (20) formed of a material; a low heating unit (22) formed of a material having a low thermal conductivity by providing a gap around the heating unit; and a heater (20) installed on the lower surface of the heating unit. 2
And 4) heating the heating unit by the heater (24) to select a sealing area (28) of the semiconductor element on the substrate and locally heat and seal the semiconductor element. And

【0008】[0008]

【作用】半導体素子の封止範囲における基板を選択し、
局所的に加熱することとしたので、封止樹脂が供給され
る部分が適当な温度に保持され、封止樹脂の流動性を助
長させることができる。即ち、基板全体を加熱する場合
に比較し、加熱温度条件が緩やかになり、加熱がしやす
く、他の部品の特性劣化が防止できる。また、チクソ性
の高い封止樹脂を用いても、基板側の加熱によって適当
な流動性が得られて封止樹脂は加熱部分の付近で所定の
範囲に拡がるが、加熱部分は局所的に設定されているの
で、その周囲の非加熱部分で封止樹脂の拡がりが防止で
き、封止樹脂の設置範囲をガードリング等の対策を要せ
ずに適当な範囲に制御できる。
The substrate is selected in the sealing range of the semiconductor element ,
Since the heating is performed locally, the portion to which the sealing resin is supplied is kept at an appropriate temperature, and the fluidity of the sealing resin can be promoted. That is, as compared with the case where the entire substrate is heated, the heating temperature condition becomes gentler, heating is facilitated, and deterioration of characteristics of other components can be prevented. In addition, even if a sealing resin having a high thixotropy is used, appropriate fluidity is obtained by heating the substrate side, and the sealing resin spreads to a predetermined range near the heated portion, but the heated portion is set locally. Therefore, it is possible to prevent the sealing resin from spreading at the non-heated portion around it, and it is possible to control the installation range of the sealing resin to an appropriate range without taking measures such as guard rings.

【0009】また、封止処理すべき基板を載置する載置
台に選択的に、即ち、加熱を必要とする部分に対応して
加熱部を設定し、この加熱部に熱伝導度の高い材質を使
用し、加熱することで、加熱を必要とする部分を局所的
に加熱することができる。不要な箇所への加熱及び封止
樹脂の必要以上の拡がりが防止でき、回路装置の信頼性
の低下を防止できる。特に、加熱部が選択的に形成され
ていて、加熱部の周囲に非加熱部、即ち、低温部がある
ため、その低温部で封止樹脂の拡がりが抑えられるの
で、拡がり防止のためのガードリングの不要化が期待で
きる。
A heating section is selectively provided on a mounting table on which a substrate to be sealed is mounted, that is, in accordance with a portion requiring heating, and a material having high thermal conductivity is provided in the heating section. By using and heating , the area that needs heating can be localized
Can be heated . Unnecessary heating and unnecessary spreading of the sealing resin can be prevented, and a decrease in the reliability of the circuit device can be prevented. In particular, since the heating portion is selectively formed and there is a non-heating portion around the heating portion, that is, a low-temperature portion, the expansion of the sealing resin is suppressed at the low-temperature portion. The need for a ring can be eliminated.

【0010】[0010]

【実施例】以下、本発明の半導体素子の封止装置を図面
に示した実施例を参照して詳細に説明する。
EXAMPLES Hereinafter, the sealing TomeSo location of the semiconductor device of the present invention with reference to embodiments shown in the drawings will be described in detail.

【0011】図1ないし図5は、本発明の半導体素子の
止装置の一実施例を示している。ガラスエポキシ樹脂
(又はアルミナ)等の絶縁材料で形成された基板2の表
面には、図2に示すように、所定の位置に封止すべき半
導体素子としてベアチップ4が設置され、このベアチッ
プ4は半導体基板2上に絶縁性又は導電性を持つ接着剤
6を以て固定されている。そして、このベアチップ4の
周囲部における基板2の表面には導体パターン8が形成
され、各導体パターン8は、例えばCu導体で形成され
ている。そして、この導体パターン8の表面は、その一
部を露出させて絶縁層としてソルダーレジスト10で覆
われている。また、ベアチップ4の電極14と所定の導
体パターン8との間には導体ワイヤ16が接続され、所
定の電気的な接続が行われている。導体ワイヤ16には
例えば金線が用いられており、この導体ワイヤ16と導
体パターン6との接続を行うため、導体パターン6の接
続部には例えば、ニッケル及び金を積層して成る接続用
パッド17が形成されている。
[0011] Figures 1-5 illustrate an embodiment of a sealing TomeSo location of the semiconductor device of the present invention. As shown in FIG. 2, on a surface of a substrate 2 formed of an insulating material such as glass epoxy resin (or alumina), a bare chip 4 is provided as a semiconductor element to be sealed at a predetermined position. It is fixed on the semiconductor substrate 2 with an insulating or conductive adhesive 6. A conductor pattern 8 is formed on the surface of the substrate 2 around the bare chip 4, and each conductor pattern 8 is formed of, for example, a Cu conductor. The surface of the conductor pattern 8 is covered with a solder resist 10 as an insulating layer with a part thereof exposed. In addition, a conductor wire 16 is connected between the electrode 14 of the bare chip 4 and a predetermined conductor pattern 8, and a predetermined electrical connection is made. For example, a gold wire is used as the conductor wire 16. In order to connect the conductor wire 16 to the conductor pattern 6, a connection pad made of, for example, nickel and gold is laminated at a connection portion of the conductor pattern 6. 17 are formed.

【0012】そして、この基板2に対する封止作業を行
うための封止装置としての載置台18が用いられる。こ
の載置台18は加熱台を兼ねており、図3に示すよう
に、基板2の封止範囲28を加熱範囲とする加熱部20
を備えている。この実施例の載置台18は、熱伝導率の
低い低加熱部22と熱伝導率の高い加熱部20とから成
っており、低加熱部22はフェノール樹脂、エポキシ樹
脂、PTFE等の耐熱性有機材料等やその他の絶縁材
料、加熱部20は銅等の熱伝導率の高い材質で形成され
ている。即ち、載置台18には基板2の加熱部分の範囲
及び位置に対応する透孔23が形成され、この透孔23
に隙間25を設けて加熱部20が設置されている。この
実施例では、透孔23は加熱部分を包囲する円孔を成し
ている。そして、この載置台18の下面部、即ち、加熱
部20の下面には加熱手段としてヒータ24が設置さ
れ、このヒータ24は適当な温度制御手段を備えた電源
26に接続されて給電されている。
A mounting table 18 is used as a sealing device for performing a sealing operation on the substrate 2. The mounting table 18 also serves as a heating table, and as shown in FIG.
It has. The mounting table 18 of this embodiment includes a low heating section 22 having a low thermal conductivity and a heating section 20 having a high thermal conductivity. The low heating section 22 is made of a heat-resistant organic material such as a phenol resin, an epoxy resin, or PTFE. The material and other insulating materials and the heating unit 20 are formed of a material having high thermal conductivity such as copper. That is, through holes 23 are formed in the mounting table 18 corresponding to the range and position of the heated portion of the substrate 2.
A heating unit 20 is provided with a gap 25 provided in the space. In this embodiment, the through hole 23 forms a circular hole surrounding the heating portion. A heater 24 is provided as a heating means on the lower surface of the mounting table 18, that is, on the lower surface of the heating unit 20. The heater 24 is connected to a power supply 26 having appropriate temperature control means and is supplied with power. .

【0013】そこで、ワイヤボンディングを完了した封
止前の基板2を、ヒータ24に通電して所定温度に維持
された載置台18に所定時間だけ載置する。その結果、
加熱部20を以て基板2の封止範囲28のみが選択され
て、局所的に加熱される。
Therefore, the unsealed substrate 2 after the completion of the wire bonding is mounted on the mounting table 18 maintained at a predetermined temperature by applying a current to the heater 24 for a predetermined time. as a result,
Only the sealing area 28 of the substrate 2 is selected by the heating unit 20.
And is locally heated.

【0014】次に、図4に示すように、加熱状態に維持
されている基板2の封止範囲28に対し、軟化して流動
状態にある封止樹脂30をその供給手段であるディスペ
ンサ32を以て適量だけ供給する。基板2の封止範囲2
8は適当な温度に加熱されているため、供給された封止
樹脂30は加熱されて流動性が維持、助長されて封止範
囲28に適当に流れ、図5に示すように、樹脂封止が行
われる。
Next, as shown in FIG. 4, a sealing resin 30 which is softened and in a fluidized state is sealed by a dispenser 32 which is a supply means for a sealing area 28 of the substrate 2 which is maintained in a heated state. Supply only the appropriate amount. Sealing area 2 of substrate 2
8 is heated to an appropriate temperature, the supplied sealing resin 30 is heated to maintain and promote fluidity and flow appropriately to the sealing area 28, and as shown in FIG. Is performed.

【0015】このように基板2の封止範囲28のみを
択して、局所的に加熱することで、封止樹脂30の流動
性を維持、助長することができ、効率的な樹脂封止が行
える。特に、封止範囲20が適当な温度に加熱されるこ
とを見越して封止樹脂30は流動性の低い、即ち、チク
ソ性の高い樹脂を用いることができ、必要以上の流動性
を設定する必要がない。
Thus, only the sealing area 28 of the substrate 2 is selected.
Alternatively, by locally heating, the fluidity of the sealing resin 30 can be maintained and promoted, and efficient resin sealing can be performed. In particular, in view of the fact that the sealing area 20 is heated to an appropriate temperature, the sealing resin 30 can be made of a resin having a low fluidity, that is, a resin having a high thixotropy. There is no.

【0016】また、基板2の封止範囲28のみを選択し
て、局所的に加熱することで、不要な加熱を防止でき、
過熱から他の素子を保護することができ、過熱による回
路装置の信頼性の低下を未然に防止することができる。
Further, only the sealing area 28 of the substrate 2 is selected.
By heating locally , unnecessary heating can be prevented,
The other elements can be protected from overheating, and a decrease in the reliability of the circuit device due to overheating can be prevented.

【0017】そして、封止装置としての載置台18は加
熱部20と低加熱部22とから成る極めて簡単な構成で
あり、選択的に形成された加熱部20を以て所定範囲の
みを選択して、局所的に加熱範囲を設定しており、基板
2の加熱すべき範囲、即ち、封止範囲28を効果的に加
熱することができる。
The mounting table 18 as a sealing device has a very simple configuration including a heating section 20 and a low heating section 22, and only a predetermined range is selected using the heating section 20 formed selectively. Since the heating range is set locally, the area of the substrate 2 to be heated, that is, the sealing area 28 can be effectively heated.

【0018】なお、実施例では、加熱部20に対して温
度差を設定するために、低加熱部22を設定したが、こ
の低加熱部22を非加熱部に設定し、この低加熱部22
に冷却水を循環させることにより冷却させ、基板2の加
熱部分に対して非加熱部分の温度上昇を抑制するように
してもよい。
In the embodiment, the low heating section 22 is set to set the temperature difference with respect to the heating section 20. However, the low heating section 22 is set as a non-heating section, and the low heating section 22 is set.
The cooling may be performed by circulating the cooling water to suppress the temperature rise of the non-heated portion of the substrate 2 with respect to the heated portion.

【0019】[0019]

【発明の効果】以上説明したように、本発明によれば、
次の効果が得られる。 a.基板上で封止樹脂の流動性を高めることができ、封
止範囲以外の過熱を防止でき、回路装置の信頼性を高め
ることができる。また、加熱条件を適当に設定すること
で封止樹脂の流動性を制御できるので、従来のガードリ
ング等の対策が不要となり、製造コストの低減を図るこ
とができる。 b.基板の封止範囲を選択的に効率よく加熱でき、基板
の不要箇所の過熱を防止でき、過熱による回路装置の信
頼性低下を防止できる。
As described above, according to the present invention,
The following effects are obtained. a. The fluidity of the sealing resin on the substrate can be increased, overheating outside the sealing range can be prevented, and the reliability of the circuit device can be increased. Moreover, since the fluidity of the sealing resin can be controlled by appropriately setting the heating conditions, conventional measures such as guard rings are not required, and the manufacturing cost can be reduced. b. The sealing area of the substrate can be selectively and efficiently heated, unnecessary portions of the substrate can be prevented from being overheated, and a decrease in the reliability of the circuit device due to overheating can be prevented.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の半導体素子の封止装置の一実施例を示
す縦断面図である。
1 is a longitudinal sectional view showing an embodiment of a sealing TomeSo location of the semiconductor device of the present invention.

【図2】封止すべき半導体素子が実装された基板を示す
縦断面図である。
FIG. 2 is a longitudinal sectional view showing a substrate on which a semiconductor element to be sealed is mounted.

【図3】載置台の熱部を示す平面図である。3 is a plan view illustrating a pressurized heat portion of the mounting table.

【図4】基板上の半導体素子に対する樹脂封止を示す縦
断面図である。
FIG. 4 is a longitudinal sectional view showing resin sealing for a semiconductor element on a substrate.

【図5】樹脂封止が施された基板を示す混成集積回路装
置の縦断面図である。
FIG. 5 is a longitudinal sectional view of a hybrid integrated circuit device showing a substrate sealed with a resin.

Claims (1)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】 封止すべき半導体素子が実装された基板
の載置台に熱伝導率の高い材質で形成された加熱部と、 この加熱部の周囲に隙間を設けて熱伝導率の低い材質で
形成された低加熱部と、 前記加熱部の下面に設置するヒータと、 を備えて、前記ヒータによる前記加熱部の加熱により、
前記基板の前記半導体素子の封止範囲を選択して、局所
的に加熱して封止することを特徴とする半導体素子の封
止装置。
1. A heating section formed of a material having a high thermal conductivity on a mounting table of a substrate on which a semiconductor element to be sealed is mounted, and a material having a low thermal conductivity formed by providing a gap around the heating section. And a heater installed on the lower surface of the heating unit, and heating of the heating unit by the heater,
Select a sealing range of the semiconductor element of the substrate and locally
A sealing device for a semiconductor element, wherein the device is heated and sealed.
JP4032549A 1992-01-22 1992-01-22 Semiconductor device sealing device Expired - Fee Related JP2990920B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4032549A JP2990920B2 (en) 1992-01-22 1992-01-22 Semiconductor device sealing device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4032549A JP2990920B2 (en) 1992-01-22 1992-01-22 Semiconductor device sealing device

Publications (2)

Publication Number Publication Date
JPH05198608A JPH05198608A (en) 1993-08-06
JP2990920B2 true JP2990920B2 (en) 1999-12-13

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP4032549A Expired - Fee Related JP2990920B2 (en) 1992-01-22 1992-01-22 Semiconductor device sealing device

Country Status (1)

Country Link
JP (1) JP2990920B2 (en)

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