JPH0519517B2 - - Google Patents
Info
- Publication number
- JPH0519517B2 JPH0519517B2 JP14416789A JP14416789A JPH0519517B2 JP H0519517 B2 JPH0519517 B2 JP H0519517B2 JP 14416789 A JP14416789 A JP 14416789A JP 14416789 A JP14416789 A JP 14416789A JP H0519517 B2 JPH0519517 B2 JP H0519517B2
- Authority
- JP
- Japan
- Prior art keywords
- molecular beam
- substrate
- crystal growth
- beam source
- hollow
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000013078 crystal Substances 0.000 claims description 33
- 230000012010 growth Effects 0.000 claims description 28
- 239000000758 substrate Substances 0.000 claims description 26
- 230000007246 mechanism Effects 0.000 claims description 22
- 238000004140 cleaning Methods 0.000 claims description 9
- 239000000463 material Substances 0.000 description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 230000008020 evaporation Effects 0.000 description 5
- 238000001704 evaporation Methods 0.000 description 5
- 239000007788 liquid Substances 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000011109 contamination Methods 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000007723 transport mechanism Effects 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14416789A JPH0312390A (ja) | 1989-06-08 | 1989-06-08 | 分子線結晶成長装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14416789A JPH0312390A (ja) | 1989-06-08 | 1989-06-08 | 分子線結晶成長装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0312390A JPH0312390A (ja) | 1991-01-21 |
| JPH0519517B2 true JPH0519517B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1993-03-16 |
Family
ID=15355760
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14416789A Granted JPH0312390A (ja) | 1989-06-08 | 1989-06-08 | 分子線結晶成長装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0312390A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5327417A (en) * | 1991-09-27 | 1994-07-05 | Nsk Ltd. | Optical disk drive and read/write apparatus |
| US5656091A (en) * | 1995-11-02 | 1997-08-12 | Vacuum Plating Technology Corporation | Electric arc vapor deposition apparatus and method |
-
1989
- 1989-06-08 JP JP14416789A patent/JPH0312390A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0312390A (ja) | 1991-01-21 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |