JPH0518467B2 - - Google Patents

Info

Publication number
JPH0518467B2
JPH0518467B2 JP60202347A JP20234785A JPH0518467B2 JP H0518467 B2 JPH0518467 B2 JP H0518467B2 JP 60202347 A JP60202347 A JP 60202347A JP 20234785 A JP20234785 A JP 20234785A JP H0518467 B2 JPH0518467 B2 JP H0518467B2
Authority
JP
Japan
Prior art keywords
polysilicon resistor
layer
type
protection circuit
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60202347A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6262559A (ja
Inventor
Toshio Wada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP60202347A priority Critical patent/JPS6262559A/ja
Publication of JPS6262559A publication Critical patent/JPS6262559A/ja
Publication of JPH0518467B2 publication Critical patent/JPH0518467B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Protection Of Static Devices (AREA)
  • Amplifiers (AREA)
JP60202347A 1985-09-12 1985-09-12 入力保護回路 Granted JPS6262559A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60202347A JPS6262559A (ja) 1985-09-12 1985-09-12 入力保護回路

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60202347A JPS6262559A (ja) 1985-09-12 1985-09-12 入力保護回路

Publications (2)

Publication Number Publication Date
JPS6262559A JPS6262559A (ja) 1987-03-19
JPH0518467B2 true JPH0518467B2 (OSRAM) 1993-03-12

Family

ID=16456027

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60202347A Granted JPS6262559A (ja) 1985-09-12 1985-09-12 入力保護回路

Country Status (1)

Country Link
JP (1) JPS6262559A (OSRAM)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4980741A (en) * 1989-02-10 1990-12-25 General Electric Company MOS protection device
JP6187078B2 (ja) * 2013-09-19 2017-08-30 三菱電機株式会社 増幅器

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56108267A (en) * 1980-01-31 1981-08-27 Nec Corp Insulated-gate field-effect semiconductor device
JPS5815277A (ja) * 1981-07-21 1983-01-28 Toshiba Corp 入力保護回路
JPS599955A (ja) * 1982-07-07 1984-01-19 Nec Corp 相補型絶縁ゲ−ト電界効果半導体集積回路装置

Also Published As

Publication number Publication date
JPS6262559A (ja) 1987-03-19

Similar Documents

Publication Publication Date Title
JP2638462B2 (ja) 半導体装置
JP3485655B2 (ja) 複合型ｍｏｓｆｅｔ
JP3075892B2 (ja) 半導体装置
JP3169844B2 (ja) 半導体装置
JP2755619B2 (ja) 絶縁ゲート型半導体装置
US4922316A (en) Infant protection device
JPH0693498B2 (ja) 半導体集積回路装置
JPH0518467B2 (OSRAM)
JP2611639B2 (ja) 半導体装置
JP4479041B2 (ja) 半導体装置及びその製造方法
JPH0518468B2 (OSRAM)
JPH07105495B2 (ja) 絶縁ゲート型半導体装置
JPS6360547B2 (OSRAM)
JPH0518466B2 (OSRAM)
JP3211871B2 (ja) 入出力保護回路
JP3185723B2 (ja) 半導体装置
US5432369A (en) Input/output protection circuit
JPH0237112B2 (OSRAM)
JPS63291470A (ja) 半導体集積回路装置の保護回路
JPH02192170A (ja) 半導体素子
JPH0716006B2 (ja) 半導体装置
JPH07115126A (ja) 半導体集積回路装置
JPH0658945B2 (ja) 半導体装置
JPS58186959A (ja) 半導体装置
JPH07321307A (ja) 半導体装置