JPH0518259B2 - - Google Patents

Info

Publication number
JPH0518259B2
JPH0518259B2 JP58237358A JP23735883A JPH0518259B2 JP H0518259 B2 JPH0518259 B2 JP H0518259B2 JP 58237358 A JP58237358 A JP 58237358A JP 23735883 A JP23735883 A JP 23735883A JP H0518259 B2 JPH0518259 B2 JP H0518259B2
Authority
JP
Japan
Prior art keywords
semiconductor substrate
conductor
groove
insulating layer
integrated circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58237358A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60130163A (ja
Inventor
Hiroshi Momose
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP58237358A priority Critical patent/JPS60130163A/ja
Publication of JPS60130163A publication Critical patent/JPS60130163A/ja
Publication of JPH0518259B2 publication Critical patent/JPH0518259B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Element Separation (AREA)
JP58237358A 1983-12-16 1983-12-16 半導体集積回路 Granted JPS60130163A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58237358A JPS60130163A (ja) 1983-12-16 1983-12-16 半導体集積回路

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58237358A JPS60130163A (ja) 1983-12-16 1983-12-16 半導体集積回路

Publications (2)

Publication Number Publication Date
JPS60130163A JPS60130163A (ja) 1985-07-11
JPH0518259B2 true JPH0518259B2 (enrdf_load_stackoverflow) 1993-03-11

Family

ID=17014206

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58237358A Granted JPS60130163A (ja) 1983-12-16 1983-12-16 半導体集積回路

Country Status (1)

Country Link
JP (1) JPS60130163A (enrdf_load_stackoverflow)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0691154B2 (ja) * 1985-10-22 1994-11-14 日本電気株式会社 半導体装置
US4939567A (en) * 1987-12-21 1990-07-03 Ibm Corporation Trench interconnect for CMOS diffusion regions
US5293512A (en) * 1991-02-13 1994-03-08 Nec Corporation Semiconductor device having a groove type isolation region
EP0603461A3 (en) * 1992-10-30 1996-09-25 Ibm Formation of 3D-structures comprising silicon silicides.

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5681968A (en) * 1979-12-07 1981-07-04 Toshiba Corp Manufacture of semiconductor device
JPS583261A (ja) * 1981-06-29 1983-01-10 Fujitsu Ltd 竪型埋め込みキヤパシタの製造方法

Also Published As

Publication number Publication date
JPS60130163A (ja) 1985-07-11

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