JPS60130163A - 半導体集積回路 - Google Patents

半導体集積回路

Info

Publication number
JPS60130163A
JPS60130163A JP58237358A JP23735883A JPS60130163A JP S60130163 A JPS60130163 A JP S60130163A JP 58237358 A JP58237358 A JP 58237358A JP 23735883 A JP23735883 A JP 23735883A JP S60130163 A JPS60130163 A JP S60130163A
Authority
JP
Japan
Prior art keywords
semiconductor substrate
integrated circuit
conductor
groove
semiconductor integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58237358A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0518259B2 (enrdf_load_stackoverflow
Inventor
Hiroshi Momose
百瀬　啓
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP58237358A priority Critical patent/JPS60130163A/ja
Publication of JPS60130163A publication Critical patent/JPS60130163A/ja
Publication of JPH0518259B2 publication Critical patent/JPH0518259B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Element Separation (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP58237358A 1983-12-16 1983-12-16 半導体集積回路 Granted JPS60130163A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58237358A JPS60130163A (ja) 1983-12-16 1983-12-16 半導体集積回路

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58237358A JPS60130163A (ja) 1983-12-16 1983-12-16 半導体集積回路

Publications (2)

Publication Number Publication Date
JPS60130163A true JPS60130163A (ja) 1985-07-11
JPH0518259B2 JPH0518259B2 (enrdf_load_stackoverflow) 1993-03-11

Family

ID=17014206

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58237358A Granted JPS60130163A (ja) 1983-12-16 1983-12-16 半導体集積回路

Country Status (1)

Country Link
JP (1) JPS60130163A (enrdf_load_stackoverflow)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6295846A (ja) * 1985-10-22 1987-05-02 Nec Corp 半導体装置
US4939567A (en) * 1987-12-21 1990-07-03 Ibm Corporation Trench interconnect for CMOS diffusion regions
US5293512A (en) * 1991-02-13 1994-03-08 Nec Corporation Semiconductor device having a groove type isolation region
EP0603461A3 (en) * 1992-10-30 1996-09-25 Ibm Formation of 3D-structures comprising silicon silicides.

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5681968A (en) * 1979-12-07 1981-07-04 Toshiba Corp Manufacture of semiconductor device
JPS583261A (ja) * 1981-06-29 1983-01-10 Fujitsu Ltd 竪型埋め込みキヤパシタの製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5681968A (en) * 1979-12-07 1981-07-04 Toshiba Corp Manufacture of semiconductor device
JPS583261A (ja) * 1981-06-29 1983-01-10 Fujitsu Ltd 竪型埋め込みキヤパシタの製造方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6295846A (ja) * 1985-10-22 1987-05-02 Nec Corp 半導体装置
US4939567A (en) * 1987-12-21 1990-07-03 Ibm Corporation Trench interconnect for CMOS diffusion regions
US5293512A (en) * 1991-02-13 1994-03-08 Nec Corporation Semiconductor device having a groove type isolation region
EP0603461A3 (en) * 1992-10-30 1996-09-25 Ibm Formation of 3D-structures comprising silicon silicides.

Also Published As

Publication number Publication date
JPH0518259B2 (enrdf_load_stackoverflow) 1993-03-11

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