JPH0518177B2 - - Google Patents
Info
- Publication number
- JPH0518177B2 JPH0518177B2 JP9340984A JP9340984A JPH0518177B2 JP H0518177 B2 JPH0518177 B2 JP H0518177B2 JP 9340984 A JP9340984 A JP 9340984A JP 9340984 A JP9340984 A JP 9340984A JP H0518177 B2 JPH0518177 B2 JP H0518177B2
- Authority
- JP
- Japan
- Prior art keywords
- discharge
- film
- present
- gas
- plasma
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000010408 film Substances 0.000 claims description 18
- 239000000178 monomer Substances 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 5
- 239000010409 thin film Substances 0.000 claims description 5
- 239000007789 gas Substances 0.000 description 10
- 238000006116 polymerization reaction Methods 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 4
- 229920006254 polymer film Polymers 0.000 description 4
- 238000000354 decomposition reaction Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000005415 magnetization Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229920000307 polymer substrate Polymers 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Landscapes
- Manufacturing Of Magnetic Record Carriers (AREA)
- Polymerisation Methods In General (AREA)
- Other Resins Obtained By Reactions Not Involving Carbon-To-Carbon Unsaturated Bonds (AREA)
- Physical Vapour Deposition (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59093409A JPS60238304A (ja) | 1984-05-10 | 1984-05-10 | 薄膜形成方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59093409A JPS60238304A (ja) | 1984-05-10 | 1984-05-10 | 薄膜形成方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60238304A JPS60238304A (ja) | 1985-11-27 |
| JPH0518177B2 true JPH0518177B2 (enExample) | 1993-03-11 |
Family
ID=14081495
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59093409A Granted JPS60238304A (ja) | 1984-05-10 | 1984-05-10 | 薄膜形成方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60238304A (enExample) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62100416A (ja) * | 1985-10-24 | 1987-05-09 | Sumitomo Metal Mining Co Ltd | 三塩化砒素の蒸留精製方法 |
| JPH0647463B2 (ja) * | 1985-10-24 | 1994-06-22 | 住友金属鉱山株式会社 | 酸化砒素よりの三塩化砒素の製造方法 |
| GB0207350D0 (en) * | 2002-03-28 | 2002-05-08 | Univ Sheffield | Surface |
| GB0313569D0 (en) * | 2003-06-12 | 2003-07-16 | Plasso Technology Ltd | Method |
| US20070065596A1 (en) * | 2003-11-20 | 2007-03-22 | Pavel Koulik | Plasma thin-film deposition method |
-
1984
- 1984-05-10 JP JP59093409A patent/JPS60238304A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60238304A (ja) | 1985-11-27 |
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