JPH0518050B2 - - Google Patents

Info

Publication number
JPH0518050B2
JPH0518050B2 JP60197169A JP19716985A JPH0518050B2 JP H0518050 B2 JPH0518050 B2 JP H0518050B2 JP 60197169 A JP60197169 A JP 60197169A JP 19716985 A JP19716985 A JP 19716985A JP H0518050 B2 JPH0518050 B2 JP H0518050B2
Authority
JP
Japan
Prior art keywords
vibrating beam
vibrating
diaphragm
layer
transducer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60197169A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6263828A (ja
Inventor
Kyoichi Ikeda
Tetsuya Watanabe
Yasushi Tono
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Yokogawa Electric Corp
Original Assignee
Yokogawa Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Yokogawa Electric Corp filed Critical Yokogawa Electric Corp
Priority to JP60197169A priority Critical patent/JPS6263828A/ja
Priority to GB8620782A priority patent/GB2180691B/en
Priority to DE19863630368 priority patent/DE3630368A1/de
Publication of JPS6263828A publication Critical patent/JPS6263828A/ja
Priority to US07/145,156 priority patent/US4841775A/en
Publication of JPH0518050B2 publication Critical patent/JPH0518050B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76897—Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
    • G01D5/00—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable
    • G01D5/12—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means
    • G01D5/243—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means influencing the phase or frequency of AC
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00—Measuring force or stress, in general
    • G01L1/16—Measuring force or stress, in general using properties of piezoelectric devices
    • G01L1/162—Measuring force or stress, in general using properties of piezoelectric devices using piezoelectric resonators
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00—Measuring force or stress, in general
    • G01L1/18—Measuring force or stress, in general using properties of piezo-resistive materials, i.e. materials of which the ohmic resistance varies according to changes in magnitude or direction of force applied to the material
    • G01L1/183—Measuring force or stress, in general using properties of piezo-resistive materials, i.e. materials of which the ohmic resistance varies according to changes in magnitude or direction of force applied to the material by measuring variations of frequency of vibrating piezo-resistive material
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00—Measuring force or stress, in general
    • G01L1/18—Measuring force or stress, in general using properties of piezo-resistive materials, i.e. materials of which the ohmic resistance varies according to changes in magnitude or direction of force applied to the material
    • G01L1/183—Measuring force or stress, in general using properties of piezo-resistive materials, i.e. materials of which the ohmic resistance varies according to changes in magnitude or direction of force applied to the material by measuring variations of frequency of vibrating piezo-resistive material
    • G01L1/186—Measuring force or stress, in general using properties of piezo-resistive materials, i.e. materials of which the ohmic resistance varies according to changes in magnitude or direction of force applied to the material by measuring variations of frequency of vibrating piezo-resistive material optical excitation or measuring of vibrations
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0001—Transmitting or indicating the displacement of elastically deformable gauges by electric, electro-mechanical, magnetic or electro-magnetic means
    • G01L9/0008—Transmitting or indicating the displacement of elastically deformable gauges by electric, electro-mechanical, magnetic or electro-magnetic means using vibrations
    • G01L9/0019—Transmitting or indicating the displacement of elastically deformable gauges by electric, electro-mechanical, magnetic or electro-magnetic means using vibrations of a semiconductive element
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0001—Transmitting or indicating the displacement of elastically deformable gauges by electric, electro-mechanical, magnetic or electro-magnetic means
    • G01L9/0008—Transmitting or indicating the displacement of elastically deformable gauges by electric, electro-mechanical, magnetic or electro-magnetic means using vibrations
    • G01L9/0019—Transmitting or indicating the displacement of elastically deformable gauges by electric, electro-mechanical, magnetic or electro-magnetic means using vibrations of a semiconductive element
    • G01L9/002—Optical excitation or measuring
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0001—Transmitting or indicating the displacement of elastically deformable gauges by electric, electro-mechanical, magnetic or electro-magnetic means
    • G01L9/0008—Transmitting or indicating the displacement of elastically deformable gauges by electric, electro-mechanical, magnetic or electro-magnetic means using vibrations
    • G01L9/0022—Transmitting or indicating the displacement of elastically deformable gauges by electric, electro-mechanical, magnetic or electro-magnetic means using vibrations of a piezoelectric element
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0001—Transmitting or indicating the displacement of elastically deformable gauges by electric, electro-mechanical, magnetic or electro-magnetic means
    • G01L9/0008—Transmitting or indicating the displacement of elastically deformable gauges by electric, electro-mechanical, magnetic or electro-magnetic means using vibrations
    • G01L9/0022—Transmitting or indicating the displacement of elastically deformable gauges by electric, electro-mechanical, magnetic or electro-magnetic means using vibrations of a piezoelectric element
    • G01L9/0023—Optical excitation or measuring
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N9/00—Investigating density or specific gravity of materials; Analysing materials by determining density or specific gravity
    • G01N9/002—Investigating density or specific gravity of materials; Analysing materials by determining density or specific gravity using variation of the resonant frequency of an element vibrating in contact with the material submitted to analysis
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/0802—Details
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/097—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by vibratory elements
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N35/00—Automatic analysis not limited to methods or materials provided for in any single one of groups G01N1/00 - G01N33/00; Handling materials therefor
    • G01N2035/00178—Special arrangements of analysers
    • G01N2035/00237—Handling microquantities of analyte, e.g. microvalves, capillary networks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R17/00—Piezoelectric transducers; Electrostrictive transducers
    • H04R17/04—Gramophone pick-ups using a stylus; Recorders using a stylus
    • H04R17/08—Gramophone pick-ups using a stylus; Recorders using a stylus signals being recorded or played back by vibration of a stylus in two orthogonal directions simultaneously

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Measuring Fluid Pressure (AREA)
  • Pressure Sensors (AREA)
JP60197169A 1985-09-06 1985-09-06 振動式トランスジューサ Granted JPS6263828A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP60197169A JPS6263828A (ja) 1985-09-06 1985-09-06 振動式トランスジューサ
GB8620782A GB2180691B (en) 1985-09-06 1986-08-28 Vibratory transducer and method of making the same
DE19863630368 DE3630368A1 (de) 1985-09-06 1986-09-05 Schwingungswandler und verfahren zu seiner herstellung
US07/145,156 US4841775A (en) 1985-09-06 1988-01-19 Vibratory transducer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60197169A JPS6263828A (ja) 1985-09-06 1985-09-06 振動式トランスジューサ

Publications (2)

Publication Number Publication Date
JPS6263828A JPS6263828A (ja) 1987-03-20
JPH0518050B2 true JPH0518050B2 (en, 2012) 1993-03-10

Family

ID=16369936

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60197169A Granted JPS6263828A (ja) 1985-09-06 1985-09-06 振動式トランスジューサ

Country Status (4)

Country Link
US (1) US4841775A (en, 2012)
JP (1) JPS6263828A (en, 2012)
DE (1) DE3630368A1 (en, 2012)
GB (1) GB2180691B (en, 2012)

Families Citing this family (92)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB8701556D0 (en) * 1987-01-24 1987-02-25 Schlumberger Electronics Uk Sensors
GB2209245A (en) * 1987-08-28 1989-05-04 Gen Electric Co Plc Method of producing a three-dimensional structure
GB8720355D0 (en) * 1987-08-28 1987-10-07 Emi Plc Thorn Measuring fluid density
US4812199A (en) * 1987-12-21 1989-03-14 Ford Motor Company Rectilinearly deflectable element fabricated from a single wafer
US4906840A (en) * 1988-01-27 1990-03-06 The Board Of Trustees Of Leland Stanford Jr., University Integrated scanning tunneling microscope
GB8806214D0 (en) * 1988-03-16 1988-04-13 Avery Ltd W & T Vibrating force sensor
DE3815800A1 (de) * 1988-05-09 1989-11-23 Asea Brown Boveri Anordnung zum messen einer gasdichte
JPH07104217B2 (ja) * 1988-05-27 1995-11-13 横河電機株式会社 振動式トランスデューサとその製造方法
FR2639113B1 (fr) * 1988-05-27 1994-02-04 Yokogawa Electric Corp Procede de fabrication d'un transducteur de type vibrant
US4808549A (en) * 1988-05-27 1989-02-28 Ford Motor Company Method for fabricating a silicon force transducer
FR2639114B1 (fr) * 1988-05-27 1994-02-04 Yokogawa Electric Corp Transducteur de type vibrant servant a mesurer une grandeur physique associee a une deformation
US5009108A (en) * 1988-09-16 1991-04-23 Yokogawa Electric Corporation Vibrating type transducer
US5206806A (en) * 1989-01-10 1993-04-27 Gerardi Joseph J Smart skin ice detection and de-icing system
US5398547A (en) * 1989-01-10 1995-03-21 Innovative Dynamics, Inc. Apparatus for measuring ice distribution profiles
US4945773A (en) * 1989-03-06 1990-08-07 Ford Motor Company Force transducer etched from silicon
US5060526A (en) * 1989-05-30 1991-10-29 Schlumberger Industries, Inc. Laminated semiconductor sensor with vibrating element
US5023503A (en) * 1990-01-03 1991-06-11 Motorola, Inc. Super high frequency oscillator/resonator
US5090254A (en) * 1990-04-11 1992-02-25 Wisconsin Alumni Research Foundation Polysilicon resonating beam transducers
US5188983A (en) * 1990-04-11 1993-02-23 Wisconsin Alumni Research Foundation Polysilicon resonating beam transducers and method of producing the same
DE69105809T2 (de) * 1990-05-10 1995-05-11 Yokogawa Electric Corp Druckaufnehmer mit schwingendem Element.
US5165289A (en) * 1990-07-10 1992-11-24 Johnson Service Company Resonant mechanical sensor
FR2664979B1 (fr) * 1990-07-20 1992-11-06 Sextant Avionique Micro-capteur de pression.
GB9018148D0 (en) * 1990-08-17 1990-10-03 De Beers Ind Diamond Vibration rod transducer
US5101664A (en) * 1990-10-15 1992-04-07 United Technologies Corporation Optical pressure transducer
EP0524381A1 (de) * 1991-07-22 1993-01-27 Landis & Gyr Business Support AG Mikrotechnisch hergestellte Sensorvorrichtung
FR2687783B1 (fr) * 1992-02-20 1994-05-20 Sextant Avionique Micro-capteur de pression.
US5591900A (en) * 1992-12-04 1997-01-07 Trw Vehicle Safety Systems Inc. Method and apparatus for testing fluid pressure in a sealed vessel
GB2276976B (en) * 1993-04-07 1996-10-23 British Aerospace Method of manufacturing a motion sensor
US5559358A (en) * 1993-05-25 1996-09-24 Honeywell Inc. Opto-electro-mechanical device or filter, process for making, and sensors made therefrom
US5511427A (en) * 1993-07-21 1996-04-30 Honeywell Inc. Cantilevered microbeam temperature sensor
JP3323343B2 (ja) * 1994-04-01 2002-09-09 日本碍子株式会社 センサ素子及び粒子センサ
US5956292A (en) * 1995-04-13 1999-09-21 The Charles Stark Draper Laboratory, Inc. Monolithic micromachined piezoelectric acoustic transducer and transducer array and method of making same
CA2176052A1 (en) * 1995-06-07 1996-12-08 James D. Seefeldt Transducer having a resonating silicon beam and method for forming same
US6021675A (en) * 1995-06-07 2000-02-08 Ssi Technologies, Inc. Resonating structure and method for forming the resonating structure
US5736430A (en) * 1995-06-07 1998-04-07 Ssi Technologies, Inc. Transducer having a silicon diaphragm and method for forming same
US5925972A (en) * 1996-09-27 1999-07-20 Ngk Insulators, Ltd. Multiple element particle sensor and signal processing electronics
DE19643342A1 (de) 1996-10-21 1998-04-30 Bosch Gmbh Robert Verfahren und Vorrichtung zum Messen einer physikalischen Größe
US5808210A (en) * 1996-12-31 1998-09-15 Honeywell Inc. Thin film resonant microbeam absolute pressure sensor
US5874675A (en) * 1997-03-20 1999-02-23 Interscience, Inc. Wideband vibration sensor
US6220096B1 (en) 1997-03-20 2001-04-24 Interscience, Inc. Differential wideband vibration
US5932953A (en) * 1997-06-30 1999-08-03 Iowa State University Research Foundation, Inc. Method and system for detecting material using piezoelectric resonators
US6300706B1 (en) * 1999-07-14 2001-10-09 The United States Of America As Represented By The Secretary Of The Army Compound semiconductor monolithic frequency sources and actuators
US6693033B2 (en) 2000-02-10 2004-02-17 Motorola, Inc. Method of removing an amorphous oxide from a monocrystalline surface
US6392257B1 (en) 2000-02-10 2002-05-21 Motorola Inc. Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same
JP2004503920A (ja) 2000-05-31 2004-02-05 モトローラ・インコーポレイテッド 半導体デバイスおよび該半導体デバイスを製造する方法
US6501973B1 (en) 2000-06-30 2002-12-31 Motorola, Inc. Apparatus and method for measuring selected physical condition of an animate subject
US6555946B1 (en) * 2000-07-24 2003-04-29 Motorola, Inc. Acoustic wave device and process for forming the same
US6590236B1 (en) 2000-07-24 2003-07-08 Motorola, Inc. Semiconductor structure for use with high-frequency signals
AU2001277001A1 (en) 2000-07-24 2002-02-05 Motorola, Inc. Heterojunction tunneling diodes and process for fabricating same
US6493497B1 (en) 2000-09-26 2002-12-10 Motorola, Inc. Electro-optic structure and process for fabricating same
US6638838B1 (en) 2000-10-02 2003-10-28 Motorola, Inc. Semiconductor structure including a partially annealed layer and method of forming the same
US6501121B1 (en) 2000-11-15 2002-12-31 Motorola, Inc. Semiconductor structure
US6559471B2 (en) 2000-12-08 2003-05-06 Motorola, Inc. Quantum well infrared photodetector and method for fabricating same
US20020096683A1 (en) 2001-01-19 2002-07-25 Motorola, Inc. Structure and method for fabricating GaN devices utilizing the formation of a compliant substrate
US6673646B2 (en) 2001-02-28 2004-01-06 Motorola, Inc. Growth of compound semiconductor structures on patterned oxide films and process for fabricating same
EP1412722A2 (en) * 2001-03-23 2004-04-28 Services Petroliers Schlumberger Fluid property sensors
WO2002082551A1 (en) 2001-04-02 2002-10-17 Motorola, Inc. A semiconductor structure exhibiting reduced leakage current
US6709989B2 (en) 2001-06-21 2004-03-23 Motorola, Inc. Method for fabricating a semiconductor structure including a metal oxide interface with silicon
US6992321B2 (en) 2001-07-13 2006-01-31 Motorola, Inc. Structure and method for fabricating semiconductor structures and devices utilizing piezoelectric materials
US6531740B2 (en) 2001-07-17 2003-03-11 Motorola, Inc. Integrated impedance matching and stability network
US6646293B2 (en) 2001-07-18 2003-11-11 Motorola, Inc. Structure for fabricating high electron mobility transistors utilizing the formation of complaint substrates
US7019332B2 (en) 2001-07-20 2006-03-28 Freescale Semiconductor, Inc. Fabrication of a wavelength locker within a semiconductor structure
US6693298B2 (en) 2001-07-20 2004-02-17 Motorola, Inc. Structure and method for fabricating epitaxial semiconductor on insulator (SOI) structures and devices utilizing the formation of a compliant substrate for materials used to form same
US6855992B2 (en) 2001-07-24 2005-02-15 Motorola Inc. Structure and method for fabricating configurable transistor devices utilizing the formation of a compliant substrate for materials used to form the same
US6667196B2 (en) 2001-07-25 2003-12-23 Motorola, Inc. Method for real-time monitoring and controlling perovskite oxide film growth and semiconductor structure formed using the method
US6585424B2 (en) 2001-07-25 2003-07-01 Motorola, Inc. Structure and method for fabricating an electro-rheological lens
US6594414B2 (en) 2001-07-25 2003-07-15 Motorola, Inc. Structure and method of fabrication for an optical switch
US6639249B2 (en) 2001-08-06 2003-10-28 Motorola, Inc. Structure and method for fabrication for a solid-state lighting device
US6589856B2 (en) 2001-08-06 2003-07-08 Motorola, Inc. Method and apparatus for controlling anti-phase domains in semiconductor structures and devices
US20030034491A1 (en) 2001-08-14 2003-02-20 Motorola, Inc. Structure and method for fabricating semiconductor structures and devices for detecting an object
US6673667B2 (en) 2001-08-15 2004-01-06 Motorola, Inc. Method for manufacturing a substantially integral monolithic apparatus including a plurality of semiconductor materials
JP3681670B2 (ja) * 2001-09-25 2005-08-10 シャープ株式会社 半導体集積回路の製造装置および製造方法
US20030071327A1 (en) 2001-10-17 2003-04-17 Motorola, Inc. Method and apparatus utilizing monocrystalline insulator
US6916717B2 (en) 2002-05-03 2005-07-12 Motorola, Inc. Method for growing a monocrystalline oxide layer and for fabricating a semiconductor device on a monocrystalline substrate
US7169619B2 (en) 2002-11-19 2007-01-30 Freescale Semiconductor, Inc. Method for fabricating semiconductor structures on vicinal substrates using a low temperature, low pressure, alkaline earth metal-rich process
US6885065B2 (en) 2002-11-20 2005-04-26 Freescale Semiconductor, Inc. Ferromagnetic semiconductor structure and method for forming the same
US6965128B2 (en) 2003-02-03 2005-11-15 Freescale Semiconductor, Inc. Structure and method for fabricating semiconductor microresonator devices
US7020374B2 (en) 2003-02-03 2006-03-28 Freescale Semiconductor, Inc. Optical waveguide structure and method for fabricating the same
DE60313327T2 (de) * 2003-11-07 2007-12-27 Varian S.P.A., Leini Druckaufnehmer
US7605391B2 (en) * 2004-12-12 2009-10-20 Burns David W Optically coupled resonator
US7379629B1 (en) 2004-12-12 2008-05-27 Burns David W Optically coupled resonant pressure sensor
US7176048B1 (en) 2004-12-12 2007-02-13 Burns David W Optically coupled sealed-cavity resonator and process
US7499604B1 (en) 2004-12-12 2009-03-03 Burns David W Optically coupled resonant pressure sensor and process
US7443509B1 (en) 2004-12-12 2008-10-28 Burns David W Optical and electronic interface for optically coupled resonators
ITTO20050316A1 (it) * 2005-05-10 2006-11-11 Varian Spa Sensore di pressione
JP5007912B2 (ja) * 2005-08-22 2012-08-22 横河電機株式会社 半導体梁を有する構造体
JP2012150029A (ja) * 2011-01-20 2012-08-09 Yokogawa Electric Corp 振動式トランスデューサおよび振動式トランスデューサの製造方法
KR20130022853A (ko) * 2011-08-26 2013-03-07 삼성전자주식회사 에너지 변환 소자와 그 제조 및 동작방법
CN104303052B (zh) * 2012-01-16 2018-11-16 仪宝科技公司 用于测量流体物理性能的方法、装置、和系统
US20150355035A1 (en) * 2014-06-05 2015-12-10 Intel Corporation In-package temperature sensor and methods therefor
DE102017117514A1 (de) 2017-08-02 2019-02-07 Truedyne Sensors AG Verwendung einer Messanordnung umfassend ein Messgerät zur Dichtebestimmung mit einem Messaufnehmer vom Vibrationstyp
US11619558B2 (en) * 2020-09-04 2023-04-04 Precise Downhole Services Ltd. Vibrating wire piezometer with modified wiring

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5237949A (en) * 1975-09-19 1977-03-24 Nishi Nippon Densen Kk Crosslinking method
GB1588669A (en) * 1978-05-30 1981-04-29 Standard Telephones Cables Ltd Silicon transducer
US4332000A (en) * 1980-10-03 1982-05-25 International Business Machines Corporation Capacitive pressure transducer
US4372173A (en) * 1980-10-20 1983-02-08 Quartex, Inc. Resonator force transducer
US4381672A (en) * 1981-03-04 1983-05-03 The Bendix Corporation Vibrating beam rotation sensor
JPS6333146Y2 (en, 2012) * 1981-05-26 1988-09-05
JPS58171866A (ja) * 1982-03-31 1983-10-08 Sanyo Electric Co Ltd 圧力センサ
JPS60138434A (ja) * 1983-12-27 1985-07-23 Fuji Electric Co Ltd 半導体形静電容量式圧力センサの製造方法
GB8426915D0 (en) * 1984-10-24 1984-11-28 Marconi Instruments Ltd Fabricating devices on semiconductor substrates

Also Published As

Publication number Publication date
DE3630368C2 (en, 2012) 1988-10-13
GB2180691A (en) 1987-04-01
GB8620782D0 (en) 1986-10-08
DE3630368A1 (de) 1987-03-19
GB2180691B (en) 1989-08-16
US4841775A (en) 1989-06-27
JPS6263828A (ja) 1987-03-20

Similar Documents

Publication Publication Date Title
JPH0518050B2 (en, 2012)
JP3223358B2 (ja) 定電界で駆動されるマイクロビームによる共振ゲージ
EP0400939B1 (en) Semiconductor sensor with vibrating element
US5165289A (en) Resonant mechanical sensor
JP3481627B2 (ja) 誘電的に分離した共振マイクロセンサ
CN108931321B (zh) 梁-岛-膜一体化谐振式压力传感器结构及制造方法
JP2005037309A (ja) 振動式トランスデューサ
JPH10270714A (ja) 半導体慣性センサの製造方法
JP4586425B2 (ja) 振動式トランスデューサ
JPH10270719A (ja) 半導体慣性センサ及びその製造方法
JPH0468576B2 (en, 2012)
JPH10178181A (ja) 半導体慣性センサの製造方法
JP2007170843A (ja) 振動式トランスデューサおよびその製造方法
JPH04304679A (ja) 圧力センサ
JPH08320342A (ja) 慣性力センサおよびその製造方法
JPH07101743B2 (ja) 半導体圧力センサの製造方法
Angell Micromachined silicon transducers for measuring force, pressure, and motion
JPH0554705B2 (en, 2012)
JPH0468575B2 (en, 2012)
JP5849663B2 (ja) 振動式トランスデューサの製造方法
JPH0420827A (ja) 振動形トランスデュサ
JPH0467899B2 (en, 2012)
JPH10256571A (ja) 半導体慣性センサの製造方法
JPH0427835A (ja) 振動形トランスデュサ
JPH0416730A (ja) 振動形トランスデュサ