JPH0517699B2 - - Google Patents
Info
- Publication number
- JPH0517699B2 JPH0517699B2 JP56181411A JP18141181A JPH0517699B2 JP H0517699 B2 JPH0517699 B2 JP H0517699B2 JP 56181411 A JP56181411 A JP 56181411A JP 18141181 A JP18141181 A JP 18141181A JP H0517699 B2 JPH0517699 B2 JP H0517699B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor
- ion implantation
- ions
- thin film
- conductive thin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 claims description 17
- 238000005468 ion implantation Methods 0.000 claims description 15
- 150000002500 ions Chemical class 0.000 claims description 12
- 239000010409 thin film Substances 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 7
- 239000010408 film Substances 0.000 description 6
- 239000012535 impurity Substances 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 4
- 235000012431 wafers Nutrition 0.000 description 4
- 230000005684 electric field Effects 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- 230000003472 neutralizing effect Effects 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- -1 Boron ions Chemical class 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000006386 neutralization reaction Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
Landscapes
- Physics & Mathematics (AREA)
- High Energy & Nuclear Physics (AREA)
- Engineering & Computer Science (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18141181A JPS5882519A (ja) | 1981-11-12 | 1981-11-12 | 半導体のイオン注入方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18141181A JPS5882519A (ja) | 1981-11-12 | 1981-11-12 | 半導体のイオン注入方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5882519A JPS5882519A (ja) | 1983-05-18 |
| JPH0517699B2 true JPH0517699B2 (it) | 1993-03-09 |
Family
ID=16100287
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18141181A Granted JPS5882519A (ja) | 1981-11-12 | 1981-11-12 | 半導体のイオン注入方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5882519A (it) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH083628B2 (ja) * | 1986-10-13 | 1996-01-17 | 三菱電機株式会社 | 非帯電性レジスト |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5489475A (en) * | 1977-12-27 | 1979-07-16 | Fujitsu Ltd | Ion implanting method |
| JPS5787056A (en) * | 1980-09-24 | 1982-05-31 | Varian Associates | Method and device for strengthening neutralization of ion beam of positive charge |
-
1981
- 1981-11-12 JP JP18141181A patent/JPS5882519A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5489475A (en) * | 1977-12-27 | 1979-07-16 | Fujitsu Ltd | Ion implanting method |
| JPS5787056A (en) * | 1980-09-24 | 1982-05-31 | Varian Associates | Method and device for strengthening neutralization of ion beam of positive charge |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5882519A (ja) | 1983-05-18 |
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