JPH0516658B2 - - Google Patents

Info

Publication number
JPH0516658B2
JPH0516658B2 JP61024320A JP2432086A JPH0516658B2 JP H0516658 B2 JPH0516658 B2 JP H0516658B2 JP 61024320 A JP61024320 A JP 61024320A JP 2432086 A JP2432086 A JP 2432086A JP H0516658 B2 JPH0516658 B2 JP H0516658B2
Authority
JP
Japan
Prior art keywords
etching
dry etching
gas
resist
thin film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP61024320A
Other languages
English (en)
Japanese (ja)
Other versions
JPS62181433A (ja
Inventor
Kazuhiro Tanaka
Tadayoshi Imai
Hidehiko Ozawa
Yoshuki Ogawa
Masahiro Hirosue
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2432086A priority Critical patent/JPS62181433A/ja
Publication of JPS62181433A publication Critical patent/JPS62181433A/ja
Publication of JPH0516658B2 publication Critical patent/JPH0516658B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
JP2432086A 1986-02-04 1986-02-04 ドライエッチング方法 Granted JPS62181433A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2432086A JPS62181433A (ja) 1986-02-04 1986-02-04 ドライエッチング方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2432086A JPS62181433A (ja) 1986-02-04 1986-02-04 ドライエッチング方法

Publications (2)

Publication Number Publication Date
JPS62181433A JPS62181433A (ja) 1987-08-08
JPH0516658B2 true JPH0516658B2 (en, 2012) 1993-03-05

Family

ID=12134890

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2432086A Granted JPS62181433A (ja) 1986-02-04 1986-02-04 ドライエッチング方法

Country Status (1)

Country Link
JP (1) JPS62181433A (en, 2012)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100446447B1 (ko) * 1996-12-24 2004-11-06 주식회사 하이닉스반도체 반도체장치제조방법
US6391790B1 (en) 2000-05-22 2002-05-21 Applied Materials, Inc. Method and apparatus for etching photomasks
US7115523B2 (en) 2000-05-22 2006-10-03 Applied Materials, Inc. Method and apparatus for etching photomasks
EP1290495A2 (en) * 2000-06-15 2003-03-12 Applied Materials, Inc. A method and apparatus for etching metal layers on substrates
US7183201B2 (en) 2001-07-23 2007-02-27 Applied Materials, Inc. Selective etching of organosilicate films over silicon oxide stop etch layers
WO2003021659A1 (en) 2001-09-04 2003-03-13 Applied Materials, Inc. Methods and apparatus for etching metal layers on substrates
US6960413B2 (en) 2003-03-21 2005-11-01 Applied Materials, Inc. Multi-step process for etching photomasks
US7521000B2 (en) 2003-08-28 2009-04-21 Applied Materials, Inc. Process for etching photomasks
CN106521505A (zh) * 2016-11-18 2017-03-22 合肥工业大学 光刻刻蚀制造微织构摩擦表面的方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60148123A (ja) * 1983-12-30 1985-08-05 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション 乾式エツチング方法

Also Published As

Publication number Publication date
JPS62181433A (ja) 1987-08-08

Similar Documents

Publication Publication Date Title
EP2302452B1 (en) Photomask blank and photomask
JP3064769B2 (ja) 位相シフトマスクおよびその製造方法ならびにその位相シフトマスクを用いた露光方法
EP0924567A1 (en) Phase shift mask and phase shift mask blank
KR100546365B1 (ko) 블랭크 포토마스크 및 이를 사용한 포토마스크의 제조방법
US4876164A (en) Process for manufacturing a photomask
US6685848B1 (en) Method and apparatus for dry-etching half-tone phase-shift films half-tone phase-shift photomasks and method for the preparation thereof and semiconductor circuits and method for the fabrication thereof
JPH0476101B2 (en, 2012)
JPH0516658B2 (en, 2012)
US4717625A (en) Photomask material
US4792461A (en) Method of forming a photomask material
JPH0343777B2 (en, 2012)
JPH0466345B2 (en, 2012)
JPS63214755A (ja) フオトマスク
JPS6227384B2 (en, 2012)
JPS5819476A (ja) クロム系膜のドライエツチング法
JPS5931975B2 (ja) 反転マスクの製造方法
JPH0243171B2 (en, 2012)
Penn New methods of processing silicon slices
JPS62493B2 (en, 2012)
JPS58153334A (ja) クロム系膜のドライエツチング法
JP2798944B2 (ja) 薄膜形成方法
JPS58174581A (ja) マスクのドライエッチング法
JPS5822382A (ja) クロム系金属膜のドライエツチング方法
JPH06102656A (ja) フォトマスク形成方法
JPH03192717A (ja) Ｘ線露光用マスクおよびその製造方法

Legal Events

Date Code Title Description
S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313111

R360 Written notification for declining of transfer of rights

Free format text: JAPANESE INTERMEDIATE CODE: R360

R360 Written notification for declining of transfer of rights

Free format text: JAPANESE INTERMEDIATE CODE: R360

R371 Transfer withdrawn

Free format text: JAPANESE INTERMEDIATE CODE: R371

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313111

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

EXPY Cancellation because of completion of term