JPH0516226Y2 - - Google Patents
Info
- Publication number
- JPH0516226Y2 JPH0516226Y2 JP7564787U JP7564787U JPH0516226Y2 JP H0516226 Y2 JPH0516226 Y2 JP H0516226Y2 JP 7564787 U JP7564787 U JP 7564787U JP 7564787 U JP7564787 U JP 7564787U JP H0516226 Y2 JPH0516226 Y2 JP H0516226Y2
- Authority
- JP
- Japan
- Prior art keywords
- shaft
- vapor phase
- phase growth
- ring
- container
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000001947 vapour-phase growth Methods 0.000 claims description 15
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 claims description 13
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 6
- 239000013078 crystal Substances 0.000 claims description 4
- 238000007789 sealing Methods 0.000 claims description 3
- 230000000149 penetrating effect Effects 0.000 claims 1
- 239000000428 dust Substances 0.000 description 3
- 229910001220 stainless steel Inorganic materials 0.000 description 3
- 239000010935 stainless steel Substances 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- BFKJFAAPBSQJPD-UHFFFAOYSA-N tetrafluoroethene Chemical group FC(F)=C(F)F BFKJFAAPBSQJPD-UHFFFAOYSA-N 0.000 description 2
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
Landscapes
- Chemical Vapour Deposition (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7564787U JPH0516226Y2 (enrdf_load_stackoverflow) | 1987-05-20 | 1987-05-20 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7564787U JPH0516226Y2 (enrdf_load_stackoverflow) | 1987-05-20 | 1987-05-20 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63186777U JPS63186777U (enrdf_load_stackoverflow) | 1988-11-30 |
| JPH0516226Y2 true JPH0516226Y2 (enrdf_load_stackoverflow) | 1993-04-28 |
Family
ID=30921988
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7564787U Expired - Lifetime JPH0516226Y2 (enrdf_load_stackoverflow) | 1987-05-20 | 1987-05-20 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0516226Y2 (enrdf_load_stackoverflow) |
-
1987
- 1987-05-20 JP JP7564787U patent/JPH0516226Y2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63186777U (enrdf_load_stackoverflow) | 1988-11-30 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5762751A (en) | Semiconductor processor with wafer face protection | |
| JP3887052B2 (ja) | 気相成長用サセプター | |
| JPH08330387A (ja) | 半導体用製造装置 | |
| JPH0516226Y2 (enrdf_load_stackoverflow) | ||
| JP2001181846A (ja) | Ｃｖｄ装置 | |
| KR100251877B1 (ko) | 기상성장장치 | |
| WO2005013343A1 (ja) | 気相成長装置及び気相成長方法 | |
| GB2168080A (en) | Vapour deposition apparatus and epitaxial layer growth methods | |
| CN111334863A (zh) | 非粘接籽晶氮化铝晶体生长装置与氮化铝晶体制备方法 | |
| JPH0963973A (ja) | 気相成長装置 | |
| JP3122883B2 (ja) | 気相成長装置 | |
| JP4110646B2 (ja) | Ｃｖｄ装置 | |
| CN109518275A (zh) | 一种提高碳化硅单晶生长过程中温度场分布均匀度的方法 | |
| CN209144317U (zh) | 一种外保温可旋转的碳化硅单晶生长装置 | |
| JPH06191998A (ja) | 炭化珪素単結晶の成長方法およびその成長装置 | |
| JPH1192280A (ja) | シリコンエピタキシャル気相成長装置 | |
| JPS58169906A (ja) | 気相成長装置 | |
| CN218059299U (zh) | 一种碳化硅外延生长的高温炉内结构 | |
| JPH0754803B2 (ja) | 気相成長方法 | |
| JP7582924B2 (ja) | サセプタの製造方法 | |
| JP2001185490A (ja) | 気相薄膜成長装置のサセプタおよび該サセプタを用いた気相薄膜成長装置 | |
| TWM673590U (zh) | 碳化矽製造裝置 | |
| CN2666932Y (zh) | 一种化合物半导体材料多晶合成的装置 | |
| JPH0614475Y2 (ja) | 半導体製造装置 | |
| JPS54152465A (en) | Manufacture of epitaxial wafer |