JPH05160538A - Ceramic wiring board - Google Patents

Abstract

PURPOSE:To obtain a ceramic wiring board mounting a semiconductor element which board can normally operate the semiconductor element for a long term, by reducing the change of resistance value of a resistor, and restraining waveform perturbation to a minimum which is caused by reflection of a signal travelling a metallized wiring layer. CONSTITUTION:In a ceramic wiring board wherein metallized wiring layers 5a, 5b, 5c and a resistoe 8 are stuck and formed on an insulative substratum 1, the resistor 8 is formed of 100 pts.wt. of metal powder, 10-100 pts.wt. of insulator powder, and 1.0-15.0 pts.wt. of nickel. The metal powder contains 10-60wt.% tungsten powder and 40-90wt.% rhenium powder.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an improvement of a ceramic wiring board suitable for use as a semiconductor element housing package for housing a semiconductor element, a circuit wiring board on which the semiconductor element is mounted, and the like.

[0002]

2. Description of the Related Art Conventionally, a semiconductor element accommodating package for accommodating a semiconductor element is generally made of an electrically insulating material such as alumina ceramics, and has a mounting portion for mounting the semiconductor element on the upper surface and upper and lower surfaces or side surfaces from the periphery of the mounting portion. And an insulating substrate having a metallized wiring layer made of a high melting point metal powder such as tungsten or molybdenum, and a metal layer such as silver braze on the metallized wiring layer for electrically connecting each electrode of the semiconductor element to an external electric circuit. It is composed of an external lead terminal attached via a brazing material and a lid, and mounts and fixes the semiconductor element on the semiconductor element mounting portion of the insulating base body with an adhesive and attaches each electrode of the semiconductor element. It is connected to the metallized wiring layer through an electrical connecting means such as a bonding wire, and then a lid is made of glass on the upper surface of the insulating substrate. Is bonded via a sealing material butter, and the like,
A semiconductor device as a final product is obtained by hermetically sealing a semiconductor element inside a container composed of an insulating base and a lid.

The insulating substrate having the metallized wiring layer is formed into a sludge by adding and mixing an appropriate organic solvent or solvent to raw material powder such as alumina, silica, magnesia and the like, and the sludge is conventionally known as a doctor blade. To form a ceramic green sheet (ceramic green sheet) by the method, then perform appropriate punching processing on the ceramic green sheet and laminate multiple sheets at high temperature.
The metallized wiring layer is manufactured by baking at (about 1600 ° C), and the metal paste obtained by adding and mixing an appropriate organic solvent and solvent to metal powder such as tungsten is well known to the ceramic green sheet that serves as an insulating substrate. It is formed by printing and applying in advance by the screen printing method.

In addition, the semiconductor element accommodating package is accommodated in the inside by accommodating the semiconductor element in the inside and then electrically connecting the semiconductor element to the external electric circuit by connecting the external lead terminal to the external electric circuit. In the semiconductor element, each electrode is connected to an external electric circuit through an electric connection means such as a bonding wire and a transmission line formed of a metallized wiring layer.

However, in the conventional package for accommodating semiconductor elements, the metallized wiring layer provided on the insulating substrate is formed by adopting the screen printing method, and the thickness and line width of the metallized wiring layer greatly vary. The transmission line that transmits the input / output signals of the semiconductor element has a characteristic impedance mismatching portion, and recently, the speed of information processing devices such as computers has rapidly increased, and the semiconductors that compose the same. Since the element has also come to be driven at high speed, when a semiconductor element for high speed driving is housed and operated in the package for housing the semiconductor element, a part of the signal input / output to / from the semiconductor element is part of the metallized wiring layer. Reflection occurs at the characteristic impedance mismatching part of the device, causing disturbance in the signal waveform and causing malfunction in the operation of the semiconductor device. It was lead to a disadvantage that cause.

Therefore, in order to solve the above-mentioned drawbacks, in the metallized wiring layer provided on the insulating substrate, a signal metallized wiring layer for sending and receiving electric signals to and from the semiconductor element and a power source metallized wiring for supplying power to the semiconductor element for driving. Layer or a metallized wiring layer for grounding
A terminating resistor having a predetermined resistance value made of a molybdenum alloy is installed to electrically terminate the signal metallized wiring layer,
It has been considered to effectively prevent reflection of a signal which is taken in and out of a semiconductor element.

[0007]

However, when the terminating resistor is formed of a tungsten-molybdenum alloy, the tungsten-molybdenum alloy has a temperature coefficient of resistance (TC
Since R) is as high as 2200 to 3000 ppm / ° C, the resistance value changes due to ambient temperature changes, and as a result, it is not possible to constantly prevent the reflection of signals that are input to and output from the semiconductor element, causing the semiconductor element to malfunction. It had the drawback.

Since the tungsten-molybdenum alloy has a low resistivity of 0.2 mΩμm, it cannot form a terminating resistor having a high resistance value and its use is limited.

[0009]

According to the present invention, in a ceramic wiring board in which a metallized wiring layer and a resistor are adhered to an insulating substrate, the resistor is 10.0 to 60.0% by weight.
Of 10 to 100.0 wt% by external addition to a metal powder composed of tungsten powder of 40.0 to 90.0 wt% of rhenium powder
Insulator powder and 1.0 to 15.0% by weight of nickel are contained.

[0010]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will now be described in detail with reference to the accompanying drawings. FIG. 1 shows an embodiment in which the ceramic wiring board of the present invention is applied to a semiconductor element housing package for housing a semiconductor element, wherein 1 is an insulating substrate and 2 is a lid.

The insulating substrate 1 and the lid 2 form a semiconductor element 4
A container 3 for accommodating the.

The insulating substrate 1 is made of an electrically insulating material such as alumina ceramics, and has a mounting portion 1A for mounting the semiconductor element 4 on the upper surface thereof, and the semiconductor element 4 is attached to the mounting portion 1A by an adhesive. It is attached and fixed via.

When the insulating substrate 1 is made of alumina ceramics, for example, alumina (Al ₂ O ₃ ) and silica (Si
O ₂ ), calcia (CaO), magnesia (MgO), etc., are mixed with a suitable organic solvent and solvent to form a slurry, which is then formed into a sheet by the doctor blade method or kander roll method. Ceramic green sheet (
(Ceramic green sheet), and thereafter, the ceramic green sheet is appropriately punched, laminated with a plurality of sheets, and fired at a high temperature (about 1600 ° C.).

The insulating substrate 1 is a semiconductor element mounting portion 1A.
A signal metallization wiring layer 5a that serves as a transmission line for input / output signals of the semiconductor element 4 from the periphery to the bottom surface, and a power supply metallization wiring layer 5 that supplies driving power to the semiconductor element 4.
b, a metallized wiring layer 5c for grounding is provided,
The electrodes of the semiconductor element 4 are connected to the periphery of the mounting portion 1A of each metallized wiring layer 5a, 5b, 5c through the bonding wire 6, and the external lead terminal 7a is provided at the portion leading to the bottom surface of the insulating substrate 1. 7b and 7c are attached via a brazing material such as silver brazing.

Each of the metallized wiring layers 5a, 5b, 5c is made of a refractory metal powder such as tungsten, molybdenum, or manganese. A metal paste obtained by adding and mixing an appropriate organic solvent and a solvent to the refractory metal powder is used. The ceramic green sheet to be the insulating substrate 1 is formed in a predetermined position on the insulating substrate 1 by printing and coating in advance by employing a conventionally known screen printing method or the like.

Each of the metallized wiring layers 5a, 5b, 5c has a metal such as nickel (Ni) or gold (Au), which is excellent in corrosion resistance and has a good electrical conductivity, on the exposed surface by a plating method or the like.
It is possible to effectively prevent the metallized wiring layers 5a, 5b, and 5c from being oxidized and corroded by depositing the metallized wiring layers 5a, 5b, and 5c on the bonding wires 6 and The external lead terminal 7 can be firmly attached and connected.

Therefore, each of the metallized wiring layers 5a, 5b,
On the exposed surface of 5c, it is preferable to deposit a metal such as nickel (Ni) or gold (Au) having excellent corrosion resistance and good conductivity in a thickness of 1.0 to 20.0 μm.

Further, between the signal metallized wiring layer 5a, the power source metallized wiring layer 5b and the ground metallized wiring layer 5c of the insulating substrate 1, there are respectively signal metallized wiring layers.
A terminating resistor 8 for electrically terminating 5a and effectively preventing reflection of a signal which is taken in and out of the semiconductor element 4 is attached.

The terminating resistor 8 is a sintered body made of tungsten, rhenium, an insulating powder and nickel, and a metal powder made of tungsten, rhenium and nickel is used as an insulating powder made of substantially the same material as the insulating substrate 1. Appropriate organic solvent and resistor paste obtained by adding and mixing the solvent are applied to the ceramic green sheet to be the insulating substrate 1 by printing and coating using a thick film technique such as screen printing. It is formed.

The terminating resistor 8 made of a sintered body of tungsten, rhenium, insulating powder and nickel has a low temperature coefficient of resistance of about 200 ppm / ° C., and therefore the terminating resistor 8
Even if heat generated by the semiconductor element 4 or external heat is applied to the resistance value, the resistance value does not change significantly. Therefore, the signal input to and output from the semiconductor element 4 is not partly reflected when the signal metallized wiring layer 5a is transmitted and the waveform is not disturbed, and the semiconductor element 4 can always be operated normally. Becomes

The terminating resistor 8 made of a sintered body of tungsten, rhenium, insulating powder and nickel has a high volume resistivity of 5.0 mΩ · μm or more, and therefore the insulating base 1 is made small in a minute margin, Moreover, the terminating resistor 8 having a high resistance value can be easily formed.

The terminating resistor 8 has a tungsten content of 1 when the total content of tungsten and rhenium is 100% by weight.
If it is less than 0.0% by weight or exceeds 60.0% by weight, the temperature coefficient of resistance of the terminating resistor 8 becomes as high as 1000 ppm / ° C or more, and if heat is applied to the terminating resistor 8 from the outside, the resistance value of the terminating resistor 8 becomes large. The signal that changes and is put in and out of the semiconductor element 4 causes waveform distortion due to reflection. Therefore, the terminating resistance 8 is specified such that the amount of tungsten is 10.0 to 60.0% by weight when the total amount of tungsten and rhenium is 100% by weight.

Further, the terminator 8 has a volume specific resistance of the terminator 8 lowering if the amount of the insulating powder added is less than 10.0% by weight with the total amount of tungsten and rhenium being 100% by weight. There is a limit to the formation of 8 and if the external addition exceeds 100.0% by weight, the terminating resistor 8 will easily break. Therefore, the terminating resistance 8 is specified in the range of 10.0 to 100.0% by weight with the addition of the insulating powder being 100% by weight of the total amount of tungsten and rhenium.

Further, the terminating resistance 8 cannot lower the temperature coefficient of resistance of the terminating resistance 8 if the addition amount of nickel is less than 1.0% by weight with the total amount of tungsten and rhenium being 100% by weight. If the amount of external addition exceeds 15.0% by weight, alloying of the terminating resistance 8 is likely to proceed, the volume resistivity becomes low and the adhesion strength with the insulating substrate 1 becomes weak. Therefore, the terminating resistor 8 can be added externally with nickel added as 100% by weight of tungsten and rhenium.
It is specified in the range of 1.0 to 15.0% by weight.

When the average particle diameter of the tungsten powder is less than 0.3 μm or the average particle diameter of the rhenium powder is less than 0.5 μm, the volume resistivity of the terminating resistance 8 tends to be small. If the average particle size of the tungsten powder and the rhenium powder exceeds 3.0 μm, the terminating resistor 8 tends to break easily. Therefore, the terminating resistor 8 has an average particle diameter of tungsten powder of 0.3 to 3.0 μm,
The average particle size of the rhenium powder is preferably in the range of 0.5 to 3.0 μm.

When the average particle diameter of the insulating powder of the terminating resistor 8 exceeds 3.0 μm, the terminating resistor 8 tends to be broken. Therefore, it is preferable that the terminating resistor 8 has an insulating powder having an average particle diameter of 3.0 μm or more.

Metallized wiring layer provided on the insulating substrate 1
5a, 5b, 5c also have external lead terminals 7a, 7b, 7c on each of them.
The external lead terminals 7a, 7b, 7c serve to electrically connect the electrodes of the semiconductor element 4 to an external electric circuit.

The external lead terminals 7a, 7b, 7c are made of a metal material such as Kovar metal (Fe-Ni-Co alloy) or 42 alloy (Fe-Ni alloy), and are ingots (lumps) of Kovar alloy or the like.
Is formed into a predetermined plate shape by adopting a conventionally known metal processing method such as a rolling method or a punching method.

The external lead terminals 7a, 7b, 7c are coated with a metal such as nickel (Ni) or gold (Au), which has excellent corrosion resistance and good conductivity, on the exposed surface by plating or the like.
If layered to a thickness of 20.0 μm, each external lead terminal 7a,
It is possible to effectively prevent oxidative corrosion of 7b, 7c and securely connect each external lead terminal 7a, 7b, 7c to an external electric circuit,
It is possible to make a strong electrical connection. Therefore, the external lead terminals 7a, 7b, and 7c are made of metal having excellent corrosion resistance and good conductivity on the exposed surface of 1.0 to 20.0 μm.
It is preferable that the layers are layered to each other.

Thus, according to the above-mentioned package for accommodating semiconductor elements, the semiconductor element 4 is attached and fixed to the semiconductor element mounting portion 1A of the insulating base 1, and each electrode of the semiconductor element 4 and the signal metallized wiring layer 5a of the insulating base 1 are formed. , The metallization wiring layer 5b for power supply and the metallization wiring layer 5c for grounding are connected via the bonding wires 6a, and then the lid 2 made of ceramics or metal is sealed on the upper surface of the insulating substrate 1 with glass, solder or the like. The semiconductor device as a final product is obtained by joining the semiconductor element 4 inside the container 3 composed of the insulating base body 1 and the lid body 2 in a hermetically sealed manner by bonding the materials.

The present invention is not limited to the above-described embodiments, but various modifications can be made without departing from the gist of the present invention. Besides, it is also applicable to a circuit wiring board on which a semiconductor element, a capacitor, a resistor, etc. are mounted.

[0032]

According to the ceramic wiring board of the present invention,
The resistor applied to the insulating substrate is a metal powder consisting of 10.0 to 60.0 wt% tungsten powder and 40.0 to 90.0 wt% rhenium powder, and 10.0 to 100.0 wt% insulator powder and 1.0 to 15.0 wt% by external addition. % Nickel, the resistance temperature coefficient can be made extremely low, and as a result, the resistance value of the resistor hardly changes even if heat is applied to the resistor from the outside. The wiring layer can always be electrically terminated to effectively prevent reflection of a signal which is taken in and out of the semiconductor element, and thus the semiconductor element can always be normally operated.

Further, since the resistor has a high volume resistivity, it is possible to easily form a resistor having a small resistance in a small margin of the insulating substrate and having a high resistance value.

[Brief description of drawings]

FIG. 1 is a cross-sectional view showing an example in which a ceramic wiring board of the present invention is applied to a semiconductor element housing package which houses a semiconductor element.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 ... Insulating substrate 2 ... Lid 4 ... Semiconductor element 5a ...- Signalized metallization wiring layer 5b ...- Power supply metallization wiring layer 5c ... Grounding Wiring layer 7a, 7b, 7c for external lead terminals 8 for terminal resistance

Continuation of front page (51) Int.Cl. ⁵ Identification number Office reference number FI technical display location H01L 23/15

Claims (1)

[Claims] 1. A ceramic wiring board comprising a metallized wiring layer and a resistor adhered to an insulating substrate, the resistor comprising 10.0 to 60.0% by weight of tungsten powder and 40.0% by weight.
To 100.0% by weight of rhenium powder and 10.0% to 100.0% by weight of insulating powder and 1.0 to 10% by weight of externally added metal powder.
A ceramic wiring board characterized by containing 15.0% by weight of nickel.