JP2828531B2 - Package for storing semiconductor elements - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an improvement in a semiconductor device housing package for housing a semiconductor device.

[0002]

2. Description of the Related Art Conventionally, a semiconductor device in which a semiconductor element is hermetically housed in a semiconductor element housing package is used for an information processing apparatus such as a computer.

As shown in FIG. 2, a semiconductor device used in such an information processing apparatus is generally made of an electrically insulating material such as alumina ceramics, and has a recess 21a for accommodating a semiconductor element at a substantially central portion of the upper surface thereof. In order to electrically connect the semiconductor element to an external electric circuit, the insulating base 21 has a large number of metallized wiring layers 22 made of a high melting point metal powder such as tungsten, molybdenum, manganese or the like drawn out from the periphery of the concave portion 21a to the outer peripheral portion. Then, a semiconductor device housing package including an external lead terminal 23 attached to the metallized wiring layer 22 via a brazing material such as silver brazing and a lid 24 is prepared, and then the semiconductor device housing package is prepared. The semiconductor element 25 is mounted and fixed on the bottom surface of the concave portion 21a of the insulating base 21 of the package via an adhesive such as glass, resin, or brazing material. Each electrode of the semiconductor element 25 is electrically connected to the metallized wiring layer 22 via a bonding wire 26, and then the lid 24 is placed on the upper surface of the insulating base 21 via a sealing material such as glass or resin. It is manufactured by joining and sealingly sealing the semiconductor element 25 inside a container including the insulating base 21 and the lid 24.

[0004]

In a package for housing a semiconductor element used in a conventional semiconductor device, an electric insulating material such as alumina ceramic constituting an insulating base has a low shielding effect against noise. Is driven at a high speed and at a low voltage, and is susceptible to harmonic noise entering from outside the semiconductor device via the metallization wiring layer and is included in a signal propagating through the metallization wiring layer. Harmonic noise is becoming more likely to be emitted to the outside of the semiconductor device. If there is a noise source at a position close to the outside of the semiconductor device, a signal propagating through the metallized wiring layer formed on the insulating base will be affected. Noise enters very easily, and this propagates to the semiconductor element as it is, causing the semiconductor element to malfunction, or It was lead to disadvantage external proximity position easily electronic devices sensitive to noise is there when released from the semiconductor device to the noise of the semiconductor device adversely affects the electronic equipment and the like.

[0005]

SUMMARY OF THE INVENTION The present invention has been devised in view of the above-mentioned disadvantages, and has as its object to effectively remove noise from a signal propagating through a metallized wiring layer, to operate a semiconductor element normally and stably, and to provide a semiconductor device. An object of the present invention is to provide a package for housing a semiconductor element which does not easily emit noise to the outside of the device.

[0006]

SUMMARY OF THE INVENTION The present invention relates to an insulating base and a cover having a mounting portion on which a semiconductor element is mounted and fixed, and a metallized wiring layer for connecting each electrode of the semiconductor element to an external electric circuit. Wherein at least a part of the metallized wiring layer is covered with a coating layer made of ferrite.

[0007]

BRIEF DESCRIPTION OF THE DRAWINGS FIG.

FIG. 1 shows an embodiment of a package for accommodating a semiconductor element according to the present invention, wherein 1 is an insulating base made of an electrically insulating material such as alumina ceramics, and 2 is a lid made of the same electrically insulating material. The insulating base 1 and the lid 2 constitute a container 3 for housing the semiconductor element 4.

The insulating base 1 has a stepped recess 1a in the center of the upper surface thereof to form a space for accommodating the semiconductor element 4.
The semiconductor element 4 is placed and fixed on the bottom surface of the concave portion 1a via an adhesive such as epoxy resin.

The insulating substrate 1 is made of, for example, an electrically insulating material such as alumina ceramics, and is made of alumina (Al 2 O).
3) A raw material powder such as silica (SiO2), calcia (CaO), magnesia (MgO) or the like is mixed with an appropriate organic solvent and solvent to form a slurry, which is formed by a conventionally known doctor blade method. Then, a ceramic green sheet (ceramic green sheet) is formed, and after that, the ceramic green sheet is subjected to an appropriate punching process and a plurality of sheets are laminated, and a high temperature (about 1600) is obtained.
C).

A metallized wiring layer 5 extending from the stepped upper surface of the concave portion 1a to the outside of the container 3 is formed on the insulating base 1, and a semiconductor upper surface is formed on the stepped upper surface of the concave portion 1a of the metallized wiring layer 5. Each electrode of the element 4 is electrically connected via a bonding wire 6, and an external lead terminal 7 connected to an external electric circuit is provided at a portion led out of the container 3 via a brazing material such as silver brazing. Be attached.

The metallized wiring layer 5 is made of tungsten (W), molybdenum (Mo), manganese (Mn) refractory metal powder, and a metal obtained by adding an appropriate organic solvent and solvent to the refractory metal powder. The paste is applied to a ceramic green sheet serving as the insulating substrate 1 in advance by employing a conventionally known thick film method such as a screen printing method, so that the paste is led out of the container 3 from the stepped upper surface of the concave portion 1a of the insulating substrate 1. Is formed.

The metallized wiring layer 5 is formed by plating a metal having good conductivity and excellent corrosion resistance, such as nickel or gold, on the exposed outer surface to a thickness of 1.0 to 20.0 μm by plating. By doing so, the oxidation corrosion of the metallized wiring layer 5 can be effectively prevented, and the connection between the metallized wiring layer 5 and the bonding wire 6 and the brazing and attachment between the metallized wiring layer 5 and the external lead terminals 7 are extremely strong. It becomes something.

Therefore, in order to prevent the metallized wiring layer 5 from being oxidized and corroded, and to make the connection between the metallized wiring layer 5 and the bonding wire 6 and the brazing between the metallized wiring layer 5 and the external lead terminals 7 robust. Nickel, gold, or the like is applied to the exposed outer surface of the metallized wiring 5 from 1.0 to 20.0.
It is preferable to coat the layer to a thickness of μm.

Further, the metallized wiring layer 5 has a concave portion 1a.
Is covered with a coating layer 9 made of ferrite, and the coating layer 9 made of ferrite has a high magnetic permeability, so that it has a high impedance with respect to high frequency components such as harmonics. Semiconductor element 4 having and housed inside
Is driven at high speed, and even if a signal containing harmonic noise propagates through the metallized wiring layer 5, noise in the propagated signal is selectively absorbed and removed by the coating layer 9 made of ferrite, and the noise is reduced. Is not transmitted to the outside or emitted outside. Therefore, an accurate signal is always propagated to the semiconductor element 4 housed therein through the metallization wiring layer 5, so that the semiconductor element 4 can be operated normally and stably, and the semiconductor device 4 can be operated externally. No noise is emitted.

The ferrite constituting the coating layer 9 is Mn.
-Zn ferrite, Ni-Zn ferrite, Mg-
A Mn-based ferrite is used, and a ferrite paste obtained by adding and mixing an appropriate organic solvent and a solvent to the ferrite powder is applied to a part of the surface of the metallized wiring layer 5 by employing a conventionally known thick film method such as a screen printing method. After printing and coating, and then firing, the concave portion 1a of the insulating substrate 1 is formed.
The metallized wiring layer 5 is disposed on the surface of the metallized wiring layer 5 located on the stepped upper surface so as to cover the metallized wiring layer 5.

The covering layer 9 is formed of a metallized wiring layer 5.
If the noise is introduced into the signal propagating through the metallization wiring layer 5, the noise is applied immediately before the noise is propagated to the semiconductor element 4. Can be absorbed and removed. Therefore, it is preferable that the coating layer 9 is coated on the surface of the metallized wiring layer 5 as close as possible to the semiconductor element 4 housed therein.

On the other hand, the external lead terminals 7 brazed to the metallized wiring layer 5 have semiconductor elements 4 housed therein.
By connecting the external lead terminal 7 to the external electric circuit, the semiconductor element 4 housed therein is connected to the external electric circuit via the metallized wiring layer 5 and the external lead terminal 7. It will be electrically connected.

The external lead terminal 7 is made of a 42 alloy (Fe
-Ni alloy), Kovar (Fe-Ni-Co alloy), etc., into a predetermined plate shape by subjecting an ingot (lumps) such as 42 alloy to a conventionally known metal working such as a rolling method or punching. It is formed.

The external lead terminal 7 may be formed by plating a metal having excellent corrosion resistance, such as nickel and gold, and good conductivity on the outer surface thereof to a thickness of 1.0 to 20.0 μm by plating. Oxidative corrosion of the lead terminal 7 can be effectively prevented, and good electrical connection between the external lead terminal 7 and the external electric circuit can be achieved. Therefore, it is preferable that the external lead terminal 7 be plated with nickel, gold, or the like on the outer surface to a thickness of 1.0 to 20.0 μm by plating.

The insulating substrate 1 has a metallized metal layer 10 on its upper surface.
The lid 2 is bonded to the cover 2 via a sealing material A, whereby the semiconductor element 4 is hermetically sealed inside the container 3.

The metallized metal layer 10 is made of a metal powder such as tungsten, molybdenum, manganese, silver and palladium. A metal paste obtained by adding a suitable organic solvent and a solvent to the metal powder is applied to the upper surface of the insulating substrate 1. Print coating is performed by employing a conventionally known thick film method such as a screen printing method, and thereafter, the resultant is baked at a high temperature to be adhered to the upper surface of the insulating substrate 1.

The lid 2 joined to the upper surface of the insulating base 1 is made of an electrically insulating material such as alumina ceramics, and a metallized metal layer 11 is previously applied to the outer peripheral portion of the lower surface. The lid 2 is joined to the insulating base 1 by joining the base 11 to the metallized metal layer 10 on the upper surface of the insulating base 1 via the sealing material A.

The lid 2 is made of, for example, alumina (Al).
2 O3), silica (CaO2), calcia (CaO),
A raw material powder such as magnesia (MgO) is filled in a press mold having a shape corresponding to the lid 2 as shown in FIG. 1 and is formed by applying a constant pressure.
The metallized metal layer 11 which is manufactured by firing at a temperature of 500 ° C. and which is deposited on the outer peripheral portion of the lower surface is made of a metal powder such as tungsten, molybdenum, manganese, silver, palladium, etc. A metal paste obtained by adding and mixing a solvent is printed and applied to the outer peripheral portion of the lower surface of the lid 2 by employing a conventionally known thick film method such as a screen printing method, and thereafter, the resultant is baked at a high temperature to thereby form the lid 2. Is attached to the outer peripheral portion of the lower surface of the.

The sealing material A for joining the lid 2 to the upper surface of the insulating base 1 is, for example, a solder having a low melting point and little affecting the characteristics of the semiconductor element 4 due to heat at the time of joining. The sealing material A made of the solder is the insulating base 1
In order to facilitate the workability of joining the cover and the cover 2, the cover is previously attached to the metallized metal layer 11 attached to the cover 2.

Thus, according to the semiconductor device housing package of the present invention, the semiconductor device 4 is mounted and fixed on the bottom surface of the concave portion 1a of the insulating base 1 with an adhesive.
Are electrically connected to the metallized wiring layer 5 via bonding wires 6, and then the lid 2 is joined to the upper surface of the insulating base 1 via a sealing material A made of solder or the like.
A semiconductor device as a final product is obtained by hermetically sealing the semiconductor element 4 in the container 3.

[0027]

According to the package for housing a semiconductor element of the present invention, since a coating layer made of ferrite is applied to a part of a metallized wiring layer for connecting each electrode of the semiconductor element to an external electric circuit, the metallized layer is formed. Even if noise enters a signal propagating through the wiring layer, the noise is absorbed and removed by the covering layer, and is not propagated to the semiconductor element.
In addition, there is no emission to the outside of the semiconductor device. Therefore, it is possible to always and normally operate the semiconductor element housed therein, and to prevent emission of harmful noise to the outside of the semiconductor device.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view showing one embodiment of a semiconductor element storage package according to the present invention.

FIG. 2 is a cross-sectional view of a conventional semiconductor element storage package.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 ... Insulating base 1a ... Depression 2 ... Lid 4 ... Semiconductor element 5 ... Metallized wiring layer 7 ... External lead terminal 9 ... Coating layer A ... Sealing material

Claims (1)

(57) [Claims] 1. A semiconductor element storage package comprising: a mounting portion on which a semiconductor element is mounted and fixed; an insulating base having a metallized wiring layer for connecting each electrode of the semiconductor element to an external electric circuit; and a lid. Wherein at least a part of the metallized wiring layer is covered with a coating layer made of ferrite.