JP3287992B2 - Package for storing semiconductor elements - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device housing package for housing a semiconductor device, and more particularly to a semiconductor device housing package for housing a high frequency semiconductor device.

[0002]

2. Description of the Related Art Conventionally, a package for accommodating a semiconductor element for accommodating a semiconductor element is generally made of a sintered body of aluminum oxide. And a lid. The semiconductor element is bonded and fixed to the bottom surface of the concave portion of the insulating base via an adhesive such as glass, resin, brazing material, and the like. The electrodes are electrically connected to the metallization wiring layer via bonding wires, and thereafter, the semiconductor element is hermetically sealed in a container formed of an insulating base and a lid, thereby forming a semiconductor device as a product. The part led out to the lower surface of the insulating base in the wiring layer is housed inside by connecting to the wiring conductor of the external electric circuit board via solder or the like. So that the semiconductor element is connected to an external electric circuit.

Further, such a conventional package for accommodating a semiconductor element prevents the metallized wiring layer made of molybdenum from being oxidized and corroded, and also connects the metallized wiring layer to the bonding wire and connects the metallized wiring layer to the external electric circuit board. To improve the connection with the conductor,
A nickel plating layer and, if necessary, a gold plating layer are further plated on the exposed surface of the metallized wiring conductor.

[0004]

However, according to such a conventional package for accommodating a semiconductor element, the nickel plating layer plated on the metallized wiring layer has a magnetic property, and the nickel plating layer has a magnetic property. Therefore, if a semiconductor element that operates at a high speed is accommodated inside and a high-speed signal is input and output to and from the semiconductor element through the metallization wiring layer, the inductance of the metallization wiring layer becomes large. As a result, the waveform of the signal is disturbed, and as a result, it becomes impossible to normally operate the semiconductor element housed therein.

An object of the present invention is to provide a semiconductor element housing package suitable for a high-frequency semiconductor element capable of solving the above-mentioned disadvantages and accurately transmitting a high-speed signal.

[0006]

According to the present invention, there is provided a package for accommodating a semiconductor element, wherein a molybdenum metallized wiring layer for connecting the semiconductor element to an external electric circuit is formed on an insulating container for accommodating the semiconductor element. What is claimed is: 1. A package for accommodating a semiconductor element comprising a metallized wiring layer having a nickel plating layer plated on a surface thereof, wherein the nickel plating layer contains molybdenum in a content of 10% by weight or more per unit volume. Things.

According to the semiconductor device housing package of the present invention, the nickel plating layer plated on the surface of the molybdenum metallized wiring layer contains molybdenum in an amount of 10% by weight or more, and thus becomes substantially non-magnetic. The inductance of the wiring layer does not become large, and a high-speed signal can be accurately transmitted to the semiconductor element housed therein by the metallized wiring layer.

[0008]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, the present invention will be described in detail with reference to the accompanying drawings.

FIG. 1 is a sectional view showing an example of an embodiment of a package for accommodating a semiconductor element according to the present invention. In FIG. 1, reference numeral 1 denotes an insulating base, and 2 denotes a lid. The insulating base 1 and the lid 2 constitute a container 4 for housing the semiconductor element 3.

The insulating substrate 1 is made of an electrically insulating material such as an aluminum oxide sintered body, an aluminum nitride sintered body, a mullite sintered body, a silicon carbide sintered body, a glass ceramic sintered body, and the like. The semiconductor element 3 is bonded and fixed to the bottom surface of the concave portion 1a via an adhesive such as glass, resin, or brazing material.

When the insulating substrate 1 is made of, for example, an aluminum oxide sintered body, a suitable organic binder, a solvent, or the like is added to a raw material powder such as aluminum oxide, silicon oxide, calcium oxide, magnesium oxide, etc., and mixed to form a slurry. In addition, a plurality of ceramic green sheets are obtained by adopting a conventionally known doctor blade method or the like into a sheet shape, and thereafter, a plurality of ceramic green sheets are subjected to appropriate punching and Are stacked on top of each other and fired at a high temperature (about 1600 ° C.).

A plurality of metallized wiring layers 5 are formed on the insulating substrate 1 from the periphery of the concave portion 1a to the lower surface, and each electrode of the semiconductor element 3 is formed at a portion of the metallized wiring layer 5 around the concave portion 1a. The portion that is electrically connected via the bonding wire 6 and that is led out to the lower surface of the insulating base 1 is electrically connected to the wiring conductor of the external electric circuit board via solder or the like.

The metallized wiring layer 5 is made of molybdenum. A metal paste obtained by adding a suitable organic binder or solvent to molybdenum powder is mixed on a ceramic green sheet serving as the insulating substrate 1 in advance by a screen printing method known in the art. By printing and applying a predetermined pattern on the insulating substrate 1, the insulating substrate 1 is adhered and formed from the periphery to the lower surface of the concave portion 1a.

The metallized wiring layer 5 is provided with a nickel plating layer 7 on the exposed surface. The nickel plating layer 7 prevents the metallized wiring layer 5 from being oxidized and corroded, and at the same time, prevents the metallized wiring layer 5 from being oxidized and corroded. And the bonding wires 6 and the metallized wiring layer 5 and the wiring conductors of the external electric circuit board are connected well.

The nickel plating layer 7 is plated to a thickness of about 1 to 10 μm by using a conventionally known electrolytic plating method or electroless plating method.

The nickel plating layer 7 contains molybdenum in an amount of 10% by weight or more per unit volume. Here, “per unit volume” means per 1 μm ³ of the volume of the nickel plating layer 7. Since the molybdenum content is 10% by weight or more per unit volume,
Naturally, it is 10% by weight or more per arbitrary volume or in total volume.

Since the nickel plating layer 7 contains 10% by weight or more of molybdenum, its magnetism is extremely weak and almost non-magnetic, and the magnetism increases the inductance of the metallized wiring layer 5. There is no. Therefore, according to the semiconductor element housing package of the present invention, a high-speed signal can be accurately propagated by the metallized wiring layer 5, and the semiconductor element 3 housed therein can be operated accurately.

If the content of molybdenum to be contained in the nickel plating layer 7 is less than 10% by weight, the magnetism of the nickel plating layer 7 is extremely weak and cannot be made substantially non-magnetic. The content of molybdenum is preferably at least 10% by weight. Further, when the content of molybdenum is at least 12% by weight, there is substantially no magnetism, so the content of molybdenum is at least 12% by weight. More preferred. On the other hand, if the molybdenum content exceeds 30% by weight, the metallized wiring layer 5
It is preferable that the content of molybdenum is further 30% by weight or less within the above range, since it becomes difficult to connect the metal wire and the bonding wire 6 and the metallized wiring layer 5 to the external electric circuit board.

In order to make the nickel plating layer 7 contain 10% by weight or more of molybdenum, the nickel plating layer 7 is plated on the surface of the metallized wiring layer 5 and then 900-1100.
Heat treatment at a temperature of 30 ° C. for 30 minutes to 1 hour to form a metallized wiring layer 5
A method of thermally diffusing the molybdenum therein into the nickel plating layer 7, or for example, nickel sulfate 50 to 90 g / l, sodium molybdate 40 to 50 g / l, sodium citrate 5 to 10 g / l, citric acid 80 to 100 g / l and a method of electroless plating in a plating bath containing a reducing agent such as sodium hypophosphite or dimethylamine borane added to the plating bath.

Thus, according to the semiconductor device housing package of the present invention, the semiconductor device 3 is bonded and fixed to the bottom surface of the concave portion 1a of the insulating base 1 with an adhesive such as glass, resin, brazing material, etc. The electrode is electrically connected to the metallized wiring layer 5 via the bonding wire 6, and then the lid 2 is joined to the upper surface of the insulating base 1 via a sealing material such as glass, resin, brazing material, etc. A semiconductor device as a product is completed by hermetically housing the semiconductor element 3 in a container 4 including the insulating base 1 and the lid 2.

The present invention is not limited to the above-described embodiment, and various changes can be made without departing from the gist of the present invention. For example, a gold plating layer may be further plated on the nickel plating layer to a thickness of about 0.1 to 3 μm. In this case, the metallized wiring layer can be more effectively prevented from being oxidized and corroded, and the metallized wiring layer can be more effectively prevented. The connection between the layer and the bonding wire and the connection between the metallized wiring layer and the wiring conductor of the external electric circuit board can be further improved.

[0022]

According to the package for housing a semiconductor device of the present invention, the nickel plating layer plated on the metallized wiring layer contains molybdenum at 10% by weight or more per unit volume. As a result, the inductance of the metallized wiring layer does not become large, and high-speed signals can be accurately propagated by the metallized wiring layer, and the semiconductor element housed therein can be operated accurately. Thus, a semiconductor element storage package suitable for a high-frequency semiconductor element can be provided.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view showing an example of an embodiment of a semiconductor element storage package according to the present invention.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 ... Insulating base 2 ... Lid 3 ... Semiconductor element 4 ... Container 5 ... Metallized wiring layer 7 ... Nickel plating layer

Claims (1)

(57) [Claims] A molybdenum metallized wiring layer for connecting a semiconductor element to an external electric circuit is formed on an insulating container containing the semiconductor element, and a nickel plating layer is plated on the surface of the molybdenum metallized wiring layer. A package for storing a semiconductor element, wherein the nickel plating layer contains molybdenum in a content of 10% by weight or more per unit volume.