JPH11238819A - Package for accommodating electronic component - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a package for accommodating an electronic component which surely prevents the electronic component accommodated in a vessel from being affected by electromagnetic waves and can normally and stably operate the electronic component for a long term. SOLUTION: This package for accommodating an electronic component is constituted of an insulating substrate 1 and a conductive lid 2. In the insulating substrate 1, a mounting part 1a where an electronic component 3 is mounted on the upper surface, and a frame-shaped metal layer which is formed surrounding the mounting part 1a are installed, and a metal layer 8 electrically connected with the frame-shaped metal layer is arranged below the mounting part 1a. The conductive lid 2 is bonded to the frame-shaped metal layer via a conductive sealing member 10. The electronic component 3 is airtightly accommodated in a vessel 4 constituted of the insulating substrate 1 and the conductive lid 2, electrically connecting the metal layer 8 and the conductive lid 2. A large number of penetrating holes are formed in the frame-shaped metal layer.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electronic component housing package for hermetically housing electronic components such as semiconductor elements and piezoelectric vibrators.

[0002]

2. Description of the Related Art Conventionally, an electronic component housing package for housing electronic devices such as a semiconductor device such as a semiconductor integrated circuit device or a piezoelectric vibrator such as a quartz oscillator or a surface acoustic wave device is made of, for example, aluminum oxide. (Al ₂
O ₃ ) made of an electrically insulating material such as a sintered body, and a recess for accommodating an electronic component at a substantially central portion of an upper surface or a lower surface thereof, and, for example, tungsten, molybdenum, etc. An insulating base having a plurality of metallized wiring layers made of a high melting point metal powder, and an external body attached to the metallized wiring layers via a brazing material such as silver brazing in order to electrically connect electronic components to an external electric circuit. It is composed of a lead terminal and a lid.

In the case where the electronic component is, for example, a semiconductor element, the semiconductor element is bonded and fixed to the bottom surface of the concave portion of the insulating base via an adhesive made of glass, resin, brazing material or the like. The electrode and the metallized wiring layer are electrically connected via an electrical connection such as a bonding wire, and then the lid is joined to the upper surface of the insulating base via a sealing material made of low-melting glass, A semiconductor device as a final product is obtained by hermetically housing a semiconductor element in a container including an insulating base and a lid.

When the electronic component is, for example, a piezoelectric vibrator, one end of the piezoelectric vibrator is bonded to a step formed on the bottom surface of the concave portion of the insulating base via an adhesive made of a conductive epoxy resin or the like. At the same time, the electrodes of the piezoelectric vibrator are electrically connected to the metallized wiring layer, and then the lid is joined to the upper surface of the insulating base via a sealing material made of low-melting glass. An electronic component device as a final product is obtained by hermetically housing a semiconductor element in a container formed of the following.

[0005] As a sealing material for joining the lid to the insulating substrate, generally, 56 to 66% by weight of lead oxide, 4 to 14% by weight of boron oxide, 1 to 6% by weight of silicon oxide, and 0.5 to 0.5% by weight of bismuth oxide Glass is used in which a glass component containing 5% by weight and 0.5 to 3% by weight of zinc oxide is added with 9 to 19% by weight of a cordierite type compound as a filler and 10 to 20% by weight of a tin titanate type compound. ing.

However, in this conventional package for housing electronic parts, ceramics such as an aluminum oxide (Al ₂ O ₃ ) sintered body forming an insulating base and a lid, and glass forming a sealing material are both used. Since there is not much ability to block electromagnetic waves, when mounted together with other electronic components on an external electric circuit board, etc., there is also a problem that mutual interference of electromagnetic waves between adjacent electronic components may cause malfunctions of the electronic components. Was. In particular, recently, electronic components have been mounted on an external electric circuit board at a very high density, and the distance between adjacent electronic components has become extremely small. The problem due to the mutual interference of electromagnetic waves has become extremely large. .

In order to solve the above-mentioned drawbacks, the applicant of the present invention first forms a metal layer below a mounting portion on which electronic components are mounted, and at the upper surface, a part of the metal layer is led out through a through-hole conductor. (Japanese Patent Application No. 9-291299) has proposed an electronic component housing package composed of an insulating base, a conductive lid and a conductive sealing material.

According to this electronic component storage package, a conductive lid is bonded to the upper surface of the insulating base via a conductive sealing material, and the metal layer provided on the insulating base and the conductive lid are connected to each other through-hole conductor. And electronically connected with the conductive encapsulant, enclosing the electronic component from above and below with the metal layer and the conductive lid, effectively preventing the electromagnetic wave from acting on the electronic component housed inside from outside. Thus, the electronic component can be operated normally and stably for a long period of time.

[0009]

However, in this electronic component housing package, the diameter of the through-hole conductor for leading a part of the metal layer to the upper surface of the insulating base is as small as about 0.2 mm, and the conductive sealing is not required. The volume resistance of the material is 1 × 1
0 from ⁴ Omega about as high that such a conductive lid and through-hole conductors provided in the insulating substrate is connected through a conductive sealing member also both electrical connection of low conduction resistance is high reliability As a result, there is a problem to be solved in that the metal layer and the conductive lid cannot be reliably electrically connected to each other, and the electronic component cannot be reliably and completely protected from external electromagnetic waves.

The present invention has been devised in view of the above-mentioned drawbacks, and its object is to reliably prevent electromagnetic waves from acting on electronic components housed in a container, and to keep electronic components normal and stable for a long period of time. An object of the present invention is to provide an electronic component storage package that can be operated at a low speed.

[0011]

SUMMARY OF THE INVENTION The present invention has a mounting portion on which an electronic component is mounted on an upper surface, and a frame-shaped metal layer formed so as to surround the mounting portion, and a lower portion of the mounting portion. An insulating base on which a metal layer electrically connected to the frame-shaped metal layer is provided, and a conductive lid. The frame-shaped metal layer includes a conductive lid and a conductive sealing material. Electronic component storage package, which is connected via the metal layer and electrically connects the metal layer and the conductive lid, and hermetically accommodates the electronic component inside a container including the insulating base and the conductive lid. Wherein a large number of through holes are formed in the frame-shaped metal layer.

Further, the present invention is characterized in that the total plane area of the through holes is 5 to 50% of the plane area of the frame-shaped metal layer.

According to the electronic component housing package of the present invention, the metal layer is disposed below the mounting portion of the insulating base on which the electronic component is mounted, and a part of the metal layer is formed on the upper surface of the insulating base. When the conductive lid is joined to the upper surface of the insulating base via the conductive sealing material because it is electrically connected to the layer, the conductive sealing material comes into contact with the frame-shaped metal layer over an extremely large area to be conductive. The conductive lid and the metal layer are reliably and electrically connected with a low conduction resistance, and as a result, the electromagnetic component is reliably prevented from acting on the electronic component, so that the electronic component can be normally and for a long time. It is possible to operate stably.

According to the electronic component housing package of the present invention, the frame-shaped metal layer has a plurality of through holes having a total plane area of, for example, 5 to 50% of the plane area of the frame-shaped metal layer. Is formed, and the upper surface of the insulating base having good bonding properties with the conductive sealing material is exposed inside the through-hole, so that the conductive lid is bonded to the frame-shaped metal layer via the conductive sealing material. Part of the conductive sealing material is firmly bonded to the upper surface of the insulating base exposed inside the through-hole, and as a result, the hermetic sealing of the container including the insulating base and the conductive lid is completed, It is also possible to operate the electronic components housed in the normal and stable operation for a long period of time.

[0015]

Next, the present invention will be described in detail with reference to the accompanying drawings. FIG. 1 is a cross-sectional view showing an example of an embodiment of an electronic component storage package according to the present invention, FIG. 2 is an enlarged cross-sectional view of the main part, and FIG. 3 is an enlarged plan view of the main part. This is an example in which the semiconductor device is a semiconductor device and the electronic component housing package is a semiconductor device housing package.

In FIG. 1, reference numeral 1 denotes an insulating base, and 2 denotes a conductive lid. The insulating base 1 and the conductive lid 2 constitute a container 4 for housing the semiconductor element 3.

The insulating base 1 is provided with a concave mounting portion 1a in which the semiconductor element 3 is mounted and accommodated in a substantially central portion of the upper surface thereof. The semiconductor element 3 is made of glass, resin, or the like.
It is bonded and fixed via an adhesive made of brazing material or the like.

The insulating substrate 1 is made of an aluminum oxide sintered body, a mullite sintered body, an aluminum nitride sintered body,
It is made of an electrically insulating material such as a silicon carbide sintered body.
In the case of an aluminum oxide-based sintered body, an appropriate organic binder, a solvent, a plasticizer, a dispersant, etc. are added to raw material powders such as aluminum oxide, silicon oxide, magnesium oxide, and calcium oxide, and the mixture is mixed to obtain slurry. Then, the slurry is formed into a sheet by using a sheet forming method such as a doctor blade method or a calender roll method, which is well known in the art, to obtain a ceramic green sheet (ceramic green sheet). 1600 ° C
It is manufactured by firing at a high temperature.

A plurality of metallized wiring layers 5 are formed on the insulating substrate 1 from the periphery of the mounting portion 1a to the upper surface. Each electrode of the semiconductor element 3 is provided around the mounting portion 1a of the metallized wiring layer 5. Are electrically connected via bonding wires 6, and external lead terminals 7 connected to an external electric circuit are attached via a brazing material such as silver brazing to a portion led out to the upper surface of the insulating base 1. ing.

The metallized wiring layer 5 functions as a conductive path when each electrode of the semiconductor element 3 is electrically connected to an external electric circuit, and is formed of a high melting point metal powder such as tungsten, molybdenum, and manganese.

The metallized wiring layer 5 is made of tungsten,
A metal paste obtained by adding a suitable organic binder, a solvent, a plasticizer, and the like to a high melting point metal powder such as molybdenum, manganese, or the like is used as the insulating substrate 1 by employing a conventionally known thick film method such as a screen printing method. The mounting portion 1a of the insulating base 1 is preliminarily printed and applied to the ceramic green sheet and fired at the same time as the ceramic green sheet.
A predetermined pattern is formed from the periphery to the upper surface.

The metallized wiring layer 5 is formed by depositing a metal having good conductivity, good corrosion resistance and good wettability with a brazing material, such as nickel or gold, to a thickness of 1 to 20 μm on its surface by plating. In other words, it is possible to effectively prevent oxidation corrosion of the metallized wiring layer 5 and to make the connection between the metallized wiring layer 5 and the bonding wire 6 and the brazing between the metallized wiring layer 5 and the external lead terminals 7 extremely strong. Can be. Accordingly, oxidation corrosion of the metallized wiring layer 5 is prevented, and the connection between the metallized wiring layer 5 and the bonding wire 6 and the metallized wiring layer 5 and the external lead terminals 7 are prevented.
In order to make the brazing strong, it is preferable that nickel, gold, or the like is applied to the surface of the metallized wiring layer 5 by plating to a thickness of 1 to 20 μm.

The insulating base 1 is provided with a metal layer 8 below the mounting portion 1a, a part of which is a frame-shaped metal layer formed at a position surrounding the mounting portion 1a on the upper surface of the insulating base 1. 9 is electrically connected.

The metal layer 8 surrounds the semiconductor element 3 housed therein with a conductive lid 2 to be described later, prevents electromagnetic waves from acting on the semiconductor element 3 from the outside, and operates the semiconductor element 3 stably. Works.

The metal layer 8 is made of, for example, tungsten,
Conventionally known screen printing method using a metal paste made of a high melting point metal powder such as molybdenum and manganese, obtained by adding an appropriate organic binder, solvent, plasticizer, etc. to the high melting point metal powder such as tungsten, molybdenum and manganese. Is applied to a ceramic green sheet serving as the insulating substrate 1 in advance by employing a thick film method such as that described above, and is baked simultaneously with the ceramic green sheet to thereby form the insulating substrate 1
Is disposed below the mounting portion 1a.

On the other hand, an external lead terminal 7 is brazed to the metallized wiring layer 5 formed on the insulating base 1, and the external lead terminal 7 connects the semiconductor element 3 housed in the container 4 to an external electric circuit. The semiconductor element 3 housed therein by connecting the external lead terminal 7 to an external electric circuit is connected to the bonding wire 6.
It is electrically connected to an external electric circuit via the metallized wiring layer 5 and the external lead terminals 7.

The external lead terminal 7 is made of a metal material such as an iron-nickel-cobalt alloy or an iron-nickel alloy.
It is formed in a predetermined shape by subjecting an ingot such as an iron-nickel-cobalt alloy to a conventionally known metal working method such as a rolling method or a punching method.

The external lead terminal 7 may be provided with a metal having good conductivity and excellent corrosion resistance, such as nickel or gold, having a thickness of 1 to 20 μm by plating. 7 can be effectively prevented, and the electrical connection between the external lead terminal 7 and the external electric circuit can be made good. Therefore, it is preferable that nickel, gold, or the like be applied to the surface of the external lead terminal 7 by plating to a thickness of 1 to 20 μm.

Further, the insulating base 1 to which the external lead terminals 7 are attached is joined to the frame-shaped metal layer 9 attached to the upper surface thereof by the conductive lid 2 via a conductive sealing material 10. As a result, the semiconductor element 3 is hermetically accommodated inside the container 4 composed of the insulating base 1 and the conductive lid 2 while the metal layer 8 of the insulating base 1 and the conductive lid 2 are electrically connected.

The frame-shaped metal layer 9 is electrically connected to the metal layer 8 and serves to electrically connect the conductive lid 2 to the metal layer 8. Is formed in a frame shape with a width of, for example, about 0.4 to 1 mm so as to surround.

The width of the frame-like metal layer 9 is, for example,
When the conductive lid 2 is bonded to the frame-shaped metal layer 9 via the conductive sealing material 10 because the conductive sealing material 10 is very wide, about 0.4 to 1 mm, the conductive sealing material 10 is extremely The conductive lid 2 and the metal layer 8 are reliably and electrically connected to each other with a low conduction resistance by contacting over a large area.
It is possible to reliably prevent electromagnetic waves from acting on the semiconductor element 3 housed therein, and to operate the semiconductor element 3 normally and stably for a long period of time.

The frame-shaped metal layer 9 is made of the same material as the metal layer 8 described above, for example, tungsten, molybdenum,
It is made of a high melting point metal powder such as manganese, and is formed in a frame shape on the upper surface of the insulating base 1 by the same method as forming the metal layer 8 on the insulating base 1.

The frame-shaped metal layer 9 is provided with a plurality of through holes 9a having a hole diameter of, for example, about 0.05 to 0.4 mm, and the conductive sealing material 10 is provided in the through holes 9a. By exposing the upper surface of the insulating base 1 having good bonding properties, the conductive lid 2 is joined to the frame-shaped metal layer 9 via the conductive sealing material 10 so that the upper surface of the insulating base 1 is electrically conductive. 2 can be firmly joined, whereby the hermetic sealing of the container 4 composed of the insulating base 1 and the conductive lid 2 is completed,
The semiconductor element 3 accommodated in the container 4 can be operated normally and stably for a long period of time.

When the total area of the through-holes 9a formed in the frame-shaped metal layer 9 is less than 5% of the plane area of the frame-shaped metal layer 9, the through-hole 9a is electrically conductive to the upper surface of the insulating base 1 having the frame-shaped metal layer 9. The bonding strength of the conductive lid 2 decreases, and the insulating base 1 and the conductive lid 2
The reliability of the hermetic sealing of the container 4 composed of the above tends to decrease, and if it exceeds 50%, the conductive lid via the conductive sealing material 10 with respect to the metal layer 8 provided on the insulating base 1. There is a risk that the electrical connection of the body 2 will be unreliable. Therefore, the through hole 9a formed in the frame-shaped metal layer 9 has a total plane area of 5 to 50 times the plane area of the frame-shaped metal layer 9.
% Is preferable.

When the frame-shaped metal layer 9 is formed by employing a thick film method such as a screen printing method, the through-hole 9a is formed in advance by forming a non-through portion having a shape corresponding to the through-hole 9a in a screen mask. As a result, a predetermined shape is formed at a predetermined position of the frame-shaped metal layer 9.

Further, the conductive sealing material 1 is provided on the frame-shaped metal layer 9.
0, a conductive lid 2 is joined, and the conductive lid 2 is made of an aluminum oxide sintered body having a surface coated with a metal film such as copper or aluminum, or an iron-nickel-cobalt alloy. And a metal material such as iron-nickel alloy. The semiconductor element 3 mounted on the mounting portion 1a of the insulating base 1 is hermetically sealed, and the semiconductor element 3 is sealed with the metal layer 8 disposed on the insulating base 1. This prevents the electromagnetic wave from acting on the surrounding semiconductor element 3 from the outside, and functions to stably operate the semiconductor element 3.

Further, a conductive sealing material 10 for bonding the conductive lid 2 to the frame-shaped metal layer 9 is used to hermetically seal the semiconductor element 3 inside the container 4 composed of the insulating base 1 and the conductive lid 2. It functions to seal and electrically connect the metal layer 8 of the insulating base 1 and the conductive lid 2 and is made of, for example, glass or organic resin containing metal powder.

The conductive sealing material 10 is made of lead oxide 5
A glass component containing 0 to 65% by weight, 2 to 10% by weight of boron oxide, 10 to 30% by weight of lead fluoride, 1 to 6% by weight of zinc oxide and 10 to 20% by weight of bismuth oxide, and lead titanate as a filler When the conductive glass is made of conductive glass to which 26 to 45% by weight of a compound is added and 5 to 20% by weight of copper, iron-nickel alloy, or iron-nickel-cobalt alloy, the softening and melting temperature of the conductive glass is 320. ° C or less, so that when the insulating base 1 and the conductive lid 2 are joined and the container 4 is hermetically sealed, the sealing temperature can be lowered, and as a result, the conductive sealing material 10 Even if the heat for melting the semiconductor element 3 acts on the semiconductor element 3 housed therein, the characteristics of the semiconductor element 3 are not degraded, and the semiconductor element 3 can be operated normally and stably for a long period of time. . The softening and melting temperature of this conductive glass is 3
When the semiconductor element 3 is bonded and fixed to the mounting portion 1a of the insulating base 1 via an adhesive such as a resin because the temperature is as low as 20 ° C. or less, the conductive sealing material 10 The semiconductor element 3 is not significantly deteriorated by the heat of softening and melting, and thus the semiconductor element 3 can be extremely firmly adhered and fixed to the mounting portion 1a of the insulating base 1, so that the semiconductor element 3 can always be operated stably. it can.

The conductive sealing material 10 is made of lead oxide 50
To 65% by weight, 2 to 10% by weight of boron oxide, 10 to 30% by weight of lead fluoride, 1 to 6% by weight of zinc oxide and 10 to 20% by weight of bismuth oxide, and a lead titanate as a filler When the compound is formed of conductive glass containing 26 to 45% by weight of a compound, 5 to 20% by weight of copper, an iron-nickel alloy, and 5 to 20% by weight of an iron-nickel-cobalt alloy, if the amount of lead oxide is less than 50% by weight, the glass Of the semiconductor element 3 is degraded by the heat generated when the container 4 is hermetically sealed, and if it exceeds 65% by weight, the chemical resistance of the glass decreases, 4, the reliability of hermetic sealing is greatly reduced. Therefore, it is preferable that the amount of the lead oxide be in the range of 50 to 65% by weight.

If the amount of boron oxide is less than 2% by weight, the crystallization of the glass proceeds and the fluidity is greatly reduced, and it becomes difficult to hermetically seal the container 4, and if it exceeds 10% by weight. The softening and melting temperature of the glass increases, and the heat generated when the container 4 is hermetically sealed causes deterioration of the characteristics of the semiconductor element 3. Therefore, it is preferable that the amount of the boron oxide be in the range of 2 to 10% by weight.

If the amount of lead fluoride is less than 10% by weight, the softening and melting temperature of the glass increases, and the heat generated when the container 4 is hermetically sealed causes deterioration of the characteristics of the semiconductor element 3. If the content is 30% by weight, the chemical resistance of the glass is reduced, and the reliability of hermetic sealing of the container 4 is greatly reduced. Therefore, it is preferable that the amount of the lead fluoride be in the range of 10 to 30% by weight.

If the amount of zinc oxide is less than 1% by weight, the chemical resistance of the glass is reduced, and the reliability of hermetic sealing of the container 4 is greatly reduced. As the crystallization proceeds, the fluidity is greatly reduced, and it becomes difficult to hermetically seal the container 4. Therefore, it is preferable that the amount of the zinc oxide be in the range of 1 to 6% by weight.

If the amount of bismuth oxide is less than 10% by weight, the softening and melting temperature of the glass becomes high, and the heat generated when the container 4 is hermetically sealed causes the characteristics of the semiconductor element 3 to deteriorate. On the other hand, if it exceeds 20% by weight, the crystallization of the glass proceeds and the fluidity is greatly reduced, making it difficult to hermetically seal the container 4. Therefore, the amount of bismuth oxide is preferably set in the range of 10 to 20% by weight.

The lead titanate-based compound added as a filler to the conductive sealing material 10 adjusts the coefficient of thermal expansion of the conductive sealing material 10 so that the insulating base 1 and the conductive lid 2 are electrically conductive. The sealing material 10 is firmly joined, and has the effect of greatly improving the reliability of hermetic sealing of the container 4. If the amount is less than 26% by weight, the coefficient of thermal expansion of the conductive sealing material 10 is insulative. 1 and the coefficient of thermal expansion of the conductive lid 2 is so different that the conductive sealing material 10 cannot be firmly joined to the insulating base 1 and the conductive lid 2. The fluidity of the conductive sealing material 10 is reduced, and it is difficult to hermetically seal the container 4. Therefore, it is preferable that the amount of the lead titanate-based compound is in the range of 26 to 45% by weight.

Copper, iron-nickel alloy, iron-nickel-cobalt alloy added to the conductive sealing material 10 as a filler is a conductivity-imparting material for the conductive sealing material 10,
When the amount is less than 5% by weight, the conductivity of the conductive sealing material 10 is reduced, and the conductive lid 2 is securely attached to the frame-shaped metal layer 9 connected to the metal layer 8 of the insulating base 1. Electrical connection cannot be made, and if it exceeds 20% by weight, the fluidity of the conductive sealing material 10 is reduced, and it becomes difficult to hermetically seal the container 4. Therefore, the amount of copper is 5 to 20.
It is preferable to set it in the range of% by weight.

Thus, according to the above-mentioned package for accommodating a semiconductor element, the semiconductor element 3 is bonded and fixed to the mounting portion 1a of the insulating base 1 via an adhesive made of glass, resin, brazing material or the like. The electrodes are electrically connected to the metallized wiring layer 5 via bonding wires 6,
Thereafter, the conductive lid 2 is joined to the frame-shaped metal layer 9 on the upper surface of the insulating substrate 1 via the conductive sealing material 10 so as to cover the mounting portion 1a, and the conductive layer 2 is electrically connected to the metal layer 8 of the insulating substrate 1 by the conductive layer. A semiconductor device 3 as a final product is completed by hermetically housing the semiconductor element 3 in a container 4 including the insulating base 1 and the conductive lid 2 while electrically connecting the lid 2.

The present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the gist of the present invention. Although the electronic component housing package for housing the element has been illustrated, the electronic component is a piezoelectric magnetic vibrator, a surface acoustic wave device, or the like, and can be applied to an electronic component housing package for housing the same.

Further, in the above-described example, the electronic component housing package in which the external lead terminals 7 are brazed to the metallized wiring layer 5 is exemplified. However, the present invention is not limited to this, and the metallized wiring layer is formed on the lower surface of the insulating base. It may be a terminal that is derived and used as it is as a terminal that is directly connected to an external electric circuit.

[0049]

According to the electronic component storage package of the present invention, a frame in which a metal layer is arranged below a mounting portion of an insulating substrate on which electronic components are mounted and a part of the metal layer is formed on the upper surface of the insulating substrate. When the conductive lid is joined to the upper surface of the insulating substrate via the conductive sealing material because it is electrically connected to the frame-shaped metal layer, the conductive sealing material contacts the frame-shaped metal layer over an extremely large area. As a result, the conductive lid and the metal layer are reliably and electrically connected with a low conduction resistance, and as a result, the electromagnetic components are reliably prevented from acting on the electronic components, and the electronic components can be normally maintained for a long time. , And can be operated stably.

According to the electronic component housing package of the present invention, the frame-shaped metal layer has a plurality of through holes having a total plane area of, for example, 5 to 50% of the plane area of the frame-shaped metal layer. Is formed, and the upper surface of the insulating base having good bonding properties with the conductive sealing material is exposed inside the through-hole, so that the conductive lid is conductive-sealed on the upper surface of the insulating base on which the frame-shaped metal layer is formed. At the time of joining via a stopper, a part of the conductive sealing material is firmly joined to the upper surface of the insulating base exposed inside the through-hole, and as a result, the airtightness of the container including the insulating base and the conductive lid is reduced. The hermetic sealing is completed, and the electronic components housed inside the container can be operated normally and stably for a long period of time.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view illustrating an example of an embodiment of an electronic component storage package according to the present invention.

FIG. 2 is an enlarged sectional view of a main part of the electronic component storage package shown in FIG.

FIG. 3 is an enlarged plan view of the vicinity of a mounting portion of an insulating base of the electronic component storage package shown in FIG. 1;

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 ... Insulating base 2 ... Conductive lid 3 ... Semiconductor element (electronic component) 4 ... Container 8 ... ... metal layer 9 ... frame-shaped metal layer 9a ... through-hole 10 ... conductive sealing material

 ──────────────────────────────────────────────────続 き Continued from the front page (72) Inventor Yoshiaki Ito 1-1, Yamashita-cho, Kokubu-shi, Kagoshima Inside the Kyocera Corporation Kagoshima Kokubu Plant

Claims (2)

[Claims] An electronic component mounted on an upper surface thereof; and a frame-shaped metal layer formed so as to surround the mounting portion. An insulating base provided with a metal layer connected to the metal layer, and a conductive lid, wherein the conductive lid is joined to the frame-shaped metal layer via a conductive sealing material, An electronic component storage package adapted to hermetically store electronic components in a container comprising an insulating base and a conductive lid while electrically connecting the frame-shaped metal and the conductive lid. An electronic component storage package, wherein a number of through holes are formed in a layer. 2. A plane area of the frame-shaped metal layer is 5 to 50% of a total plane area of the through hole.
Electronic component storage package according to 1.