JPH0514538Y2 - - Google Patents
Info
- Publication number
- JPH0514538Y2 JPH0514538Y2 JP1986154856U JP15485686U JPH0514538Y2 JP H0514538 Y2 JPH0514538 Y2 JP H0514538Y2 JP 1986154856 U JP1986154856 U JP 1986154856U JP 15485686 U JP15485686 U JP 15485686U JP H0514538 Y2 JPH0514538 Y2 JP H0514538Y2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor laser
- harmonic generator
- resonator
- waveguide
- laser device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 claims description 21
- 230000003287 optical effect Effects 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 238000000034 method Methods 0.000 description 3
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical compound OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000004927 fusion Effects 0.000 description 2
- 239000005711 Benzoic acid Substances 0.000 description 1
- 229910013641 LiNbO 3 Inorganic materials 0.000 description 1
- 235000010233 benzoic acid Nutrition 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/0604—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium comprising a non-linear region, e.g. generating harmonics of the laser frequency
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Lasers (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1986154856U JPH0514538Y2 (US06633600-20031014-M00021.png) | 1986-10-08 | 1986-10-08 | |
GB878723535A GB8723535D0 (en) | 1986-10-08 | 1987-10-07 | Semiconductor laser apparatus |
US07/105,585 US4862473A (en) | 1986-10-08 | 1987-10-08 | Semiconductor laser apparatus having a high harmonic generating waveguide |
GB8809835A GB2202990B (en) | 1986-10-08 | 1988-04-26 | Semiconductor laser device and a method of making same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1986154856U JPH0514538Y2 (US06633600-20031014-M00021.png) | 1986-10-08 | 1986-10-08 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6361173U JPS6361173U (US06633600-20031014-M00021.png) | 1988-04-22 |
JPH0514538Y2 true JPH0514538Y2 (US06633600-20031014-M00021.png) | 1993-04-19 |
Family
ID=15593403
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1986154856U Expired - Lifetime JPH0514538Y2 (US06633600-20031014-M00021.png) | 1986-10-08 | 1986-10-08 |
Country Status (3)
Country | Link |
---|---|
US (1) | US4862473A (US06633600-20031014-M00021.png) |
JP (1) | JPH0514538Y2 (US06633600-20031014-M00021.png) |
GB (2) | GB8723535D0 (US06633600-20031014-M00021.png) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2738713B2 (ja) * | 1988-09-19 | 1998-04-08 | 株式会社日立製作所 | 第2高調波発生装置 |
JPH04206791A (ja) * | 1990-11-30 | 1992-07-28 | Hitachi Ltd | 半導体レーザ装置 |
JP2805400B2 (ja) * | 1991-06-14 | 1998-09-30 | 富士写真フイルム株式会社 | 光波長変換装置 |
US5390210A (en) * | 1993-11-22 | 1995-02-14 | Hewlett-Packard Company | Semiconductor laser that generates second harmonic light with attached nonlinear crystal |
US5363390A (en) * | 1993-11-22 | 1994-11-08 | Hewlett-Packard Company | Semiconductor laser that generates second harmonic light by means of a nonlinear crystal in the laser cavity |
JPH11346021A (ja) * | 1998-04-03 | 1999-12-14 | Hewlett Packard Co <Hp> | 発光装置およびその製造方法 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6286881A (ja) * | 1985-10-14 | 1987-04-21 | Matsushita Electric Ind Co Ltd | 光出力装置 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3619795A (en) * | 1970-04-10 | 1971-11-09 | Bell Telephone Labor Inc | Phase matching in dielectric waveguides to extend the interaction distance of harmonic generators and parametric amplifiers |
JPS58378A (ja) * | 1981-06-25 | 1983-01-05 | Mitsubishi Heavy Ind Ltd | プラズマジエツト溶接,切断方法 |
-
1986
- 1986-10-08 JP JP1986154856U patent/JPH0514538Y2/ja not_active Expired - Lifetime
-
1987
- 1987-10-07 GB GB878723535A patent/GB8723535D0/en active Pending
- 1987-10-08 US US07/105,585 patent/US4862473A/en not_active Expired - Lifetime
-
1988
- 1988-04-26 GB GB8809835A patent/GB2202990B/en not_active Expired - Lifetime
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6286881A (ja) * | 1985-10-14 | 1987-04-21 | Matsushita Electric Ind Co Ltd | 光出力装置 |
Also Published As
Publication number | Publication date |
---|---|
GB8723535D0 (en) | 1987-11-11 |
US4862473A (en) | 1989-08-29 |
GB2202990B (en) | 1990-04-11 |
GB2202990A (en) | 1988-10-05 |
GB8809835D0 (en) | 1988-06-02 |
JPS6361173U (US06633600-20031014-M00021.png) | 1988-04-22 |
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