JPH0513569A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPH0513569A JPH0513569A JP16126691A JP16126691A JPH0513569A JP H0513569 A JPH0513569 A JP H0513569A JP 16126691 A JP16126691 A JP 16126691A JP 16126691 A JP16126691 A JP 16126691A JP H0513569 A JPH0513569 A JP H0513569A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- semiconductor
- scribe region
- scribe
- semiconductor wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Dicing (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は半導体装置に関し、特に
半導体ウェーハ上に設けられたスクライブ領域の構造に
関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device, and more particularly to a structure of a scribe region provided on a semiconductor wafer.
【0002】[0002]
【従来の技術】従来、半導体ウェーハ上に設けられたス
クライブ領域の構造としては、図3の如く一様にウェー
ハ基板が露出する構造を取るのが一般的である。これは
後工程においてウェーハを各ペレットに分離する場合に
切断が容易な様に、またこの時に入る微小なクラックを
スクライブ領域内に留めておく目的がある。さらに半導
体装置表面を流れるリーク電流をこのスクライブ領域を
通して接地電位に逃す目的もある。2. Description of the Related Art Conventionally, as a structure of a scribe region provided on a semiconductor wafer, a structure in which a wafer substrate is uniformly exposed is generally adopted as shown in FIG. This is for the purpose of facilitating cutting when the wafer is separated into pellets in a later step, and for keeping minute cracks that enter at this time in the scribe region. Further, there is a purpose of letting leak current flowing on the surface of the semiconductor device to the ground potential through the scribe region.
【0003】この様な構造を採るスクライブ領域は半導
体装置上面の平面との間に一般的に数μm程度の段差を
形成し、スクライブ領域は一様の溝になるのが常であ
る。The scribe region having such a structure generally forms a step of about several μm with the plane of the upper surface of the semiconductor device, and the scribe region is usually a uniform groove.
【0004】[0004]
【発明が解決しようとする課題】この従来の一様な溝の
構造を採るスクライブ領域のため半導体装置の製造過程
において、特にフォトレジスト等の回転塗布工程にて塗
布液がスクライブ領域である溝に添って半導体ウェーハ
表面を広がって行き、ウェーハ全面に均一に塗布されな
いという欠点がある。特にリニアイメージセンサの様に
非常に細長い半導体装置の場合にはウェーハ上の縦方向
と横方向のスクライブ領域、すなわち溝の本数が極端に
異なり上記の問題が顕著に現われる。Because of this conventional scribe region having a uniform groove structure, the coating liquid is applied to the groove which is the scribe region in the semiconductor device manufacturing process, particularly in the spin coating process of photoresist or the like. Along with this, there is a drawback that the surface of the semiconductor wafer spreads and is not uniformly coated on the entire surface of the wafer. In particular, in the case of a very long and narrow semiconductor device such as a linear image sensor, the above-mentioned problems are prominently manifested because the scribe regions in the vertical direction and the horizontal direction on the wafer, that is, the number of grooves is extremely different.
【0005】本発明の目的は、従来の欠点を除去し、半
導体装置の形に関係なく、半導体ウェーハの全面にわた
ってフォトレジストが均一に塗布できる半導体装置を提
供することにある。An object of the present invention is to eliminate the conventional drawbacks and provide a semiconductor device capable of uniformly coating a photoresist on the entire surface of a semiconductor wafer regardless of the shape of the semiconductor device.
【0006】[0006]
【課題を解決するための手段】本発明の半導体装置は半
導体ウェーハ上に設けられた複数の半導体装置と、これ
らの半導体装置を分離するスクライブ領域を有する半導
体装置において、このスクライブ領域の一部を半導体装
置の平均的平面と同一の面にした構造を有している。SUMMARY OF THE INVENTION A semiconductor device of the present invention is a semiconductor device having a plurality of semiconductor devices provided on a semiconductor wafer and a scribe region for separating these semiconductor devices. It has a structure on the same plane as the average plane of the semiconductor device.
【0007】[0007]
【実施例】次に、本発明について図面を参照して説明す
る。図1は本発明の一実施例を示す斜視図である。シリ
コンなどの半導体ウェーハ1上に半導体装置2aii,2
ajiが配置されている。これらの半導体装置はそれぞれ
を分けるスクライブ領域3xi ,3xj 及び3yi ,3
yj により大まかに分割されてはいるが、各半導体装置
の周辺部の複数箇所にて接続されている。この場合、ス
クライブ領域は700〜900μm毎に20〜30μm
の幅にて、半導体装置上面の平均的平面と同一の面を有
する様に部分的に盛り上っている。DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, the present invention will be described with reference to the drawings. FIG. 1 is a perspective view showing an embodiment of the present invention. Semiconductor devices 2a ii , 2 on a semiconductor wafer 1 such as silicon
a ji is placed. These semiconductor devices are divided into scribe areas 3x i , 3x j and 3y i , 3
Although roughly divided by y j, they are connected at a plurality of locations in the peripheral portion of each semiconductor device. In this case, the scribe area is 20 to 30 μm every 700 to 900 μm.
Of the semiconductor device is partially raised to have the same plane as the average plane of the upper surface of the semiconductor device.
【0008】図2は本発明の他の実施例を示す斜視図で
ある。スクライブ領域の一部は第1の実施例と同様に盛
り上った構造を有している。この実施例では、半導体装
置の製造過程において特に問題となる各半導体装置の長
辺部のみにおいて、スクライブ領域を盛り上げた構造を
有している。FIG. 2 is a perspective view showing another embodiment of the present invention. A part of the scribe area has a raised structure as in the first embodiment. This embodiment has a structure in which the scribe region is raised only in the long side portion of each semiconductor device which is particularly problematic in the manufacturing process of the semiconductor device.
【0009】[0009]
【発明の効果】以上述べたように本発明は、半導体ウェ
ーハ上の複数の半導体装置を分離するスクライブ領域の
一部を半導体装置の平均的平面と同一の面となる様に盛
り上げたので、フォトレジスト等の回転塗布において塗
布液がスクライブ領域の溝部よりあふれ出てくるため、
半導体ウェーハの全面にわたって均一に塗布できるとい
う効果を有する。As described above, according to the present invention, a part of the scribe region for separating a plurality of semiconductor devices on a semiconductor wafer is raised so as to be flush with the average plane of the semiconductor device. In spin coating of resist etc., the coating liquid overflows from the groove in the scribe area,
It has the effect that it can be applied uniformly over the entire surface of the semiconductor wafer.
【図1】本発明の一実施例の斜視図である。FIG. 1 is a perspective view of an embodiment of the present invention.
【図2】本発明の他の実施例の斜視図である。FIG. 2 is a perspective view of another embodiment of the present invention.
【図3】従来の半導体装置の一例の斜視図である。FIG. 3 is a perspective view of an example of a conventional semiconductor device.
1 半導体ウェーハ 2aii,2aji 半導体装置 3xi ,3xj ,3yi ,3yj スクライブ領域1 semiconductor wafer 2a ii , 2a ji semiconductor device 3x i , 3x j , 3y i , 3y j scribe area
Claims (1)
導体装置とこれらの半導体装置を分離するスクライブ領
域を有する半導体装置において、前記スクライブ領域の
一部を前記半導体装置の平均的平面と同一の面にするこ
とを特徴とする半導体装置。1. In a semiconductor device having a plurality of semiconductor devices provided on a semiconductor wafer and a scribe region for separating these semiconductor devices, a part of the scribe region is an average of the semiconductor devices. A semiconductor device having the same surface as the target plane.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16126691A JPH0513569A (en) | 1991-07-02 | 1991-07-02 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16126691A JPH0513569A (en) | 1991-07-02 | 1991-07-02 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH0513569A true JPH0513569A (en) | 1993-01-22 |
Family
ID=15731841
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16126691A Pending JPH0513569A (en) | 1991-07-02 | 1991-07-02 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0513569A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2004077963A1 (en) * | 2003-03-04 | 2004-09-16 | Wakunaga Pharmaceutical Co. Ltd. | Processed plant product and method of producing the same |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS50150366A (en) * | 1974-05-22 | 1975-12-02 | ||
JPS61125040A (en) * | 1984-11-22 | 1986-06-12 | Hitachi Ltd | Semiconductor device |
JPS61150268A (en) * | 1984-12-24 | 1986-07-08 | Hitachi Ltd | Manufacture of semiconductor device |
-
1991
- 1991-07-02 JP JP16126691A patent/JPH0513569A/en active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS50150366A (en) * | 1974-05-22 | 1975-12-02 | ||
JPS61125040A (en) * | 1984-11-22 | 1986-06-12 | Hitachi Ltd | Semiconductor device |
JPS61150268A (en) * | 1984-12-24 | 1986-07-08 | Hitachi Ltd | Manufacture of semiconductor device |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2004077963A1 (en) * | 2003-03-04 | 2004-09-16 | Wakunaga Pharmaceutical Co. Ltd. | Processed plant product and method of producing the same |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 19971209 |