JPH05121463A - Assembly structure of semiconductor device - Google Patents
Assembly structure of semiconductor deviceInfo
- Publication number
- JPH05121463A JPH05121463A JP3283371A JP28337191A JPH05121463A JP H05121463 A JPH05121463 A JP H05121463A JP 3283371 A JP3283371 A JP 3283371A JP 28337191 A JP28337191 A JP 28337191A JP H05121463 A JPH05121463 A JP H05121463A
- Authority
- JP
- Japan
- Prior art keywords
- spacer
- electrode substrate
- semiconductor device
- semiconductor chip
- solder
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Die Bonding (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は、プレーナ型ダイオード
などを対象とした半導体装置の組立構造に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device assembly structure for a planar diode or the like.
【0002】[0002]
【従来の技術】まず、図4に従来方法で組立て構成され
た頭記半導体装置の構造を示す。図において、1は電極
基板(金属フレーム)2は半導体チップ、2aは半導体
チップ2の下面側に形成したパッシベーション膜、3は
半導体チップ2の上面にはんだ接合したリード、4は電
極基板1と半導体チップ2との間に介挿してはんだ接合
したスペーサ、5ははんだシート、6は封止樹脂層であ
る。なお、前記スペーサ4は、電極基板1とこれに向か
い合う半導体チップ2のパッシベーション膜2aとの間
で所要の絶縁距離を確保するために設けたものである。2. Description of the Related Art First, FIG. 4 shows the structure of a head semiconductor device assembled by a conventional method. In the figure, 1 is an electrode substrate (metal frame) 2, a semiconductor chip, 2a is a passivation film formed on the lower surface side of the semiconductor chip 2, 3 is a lead soldered to the upper surface of the semiconductor chip 2, and 4 is the electrode substrate 1 and the semiconductor. Spacers 5 interposed between the chips 2 and joined by soldering are solder sheets, and 6 is a sealing resin layer. The spacer 4 is provided to secure a required insulation distance between the electrode substrate 1 and the passivation film 2a of the semiconductor chip 2 facing the electrode substrate 1.
【0003】かかる構成の半導体装置は次のようにして
組立て構成される。まず、電極基板1の上にスペーサ
4,半導体チップ2,リード3とはんだシート5を交互
に積み重ねて載置し、次に加熱炉などの熱源より熱を加
えて電極基板1,スペーサ4,半導体チップ2,リード
3の相互間をリフローはんだ付けした後、半導体チップ
1の周域を樹脂封止して完成する。The semiconductor device having such a structure is assembled and configured as follows. First, spacers 4, semiconductor chips 2, leads 3 and solder sheets 5 are alternately stacked and placed on the electrode substrate 1, and then heat is applied from a heat source such as a heating furnace to form the electrode substrate 1, spacers 4, semiconductors. After reflow soldering between the chips 2 and the leads 3, the peripheral region of the semiconductor chip 1 is sealed with resin to complete the process.
【0004】[0004]
【発明が解決しようとする課題】ところで、前記構成の
半導体装置では、そのリフローはんだ付け工程の段階で
電極基板1,半導体チップ2,スペーサ4とはんだシー
ト5との間が自由に動き得る状態にあるため、はんだシ
ート5が溶融した際に図示のように各部品が所定の組立
位置から相対的にずれ動いたままの状態で接合されてし
まうケースが多々発生する。しかも、前記のようなはん
だ付け位置にずれが生じると、パッシベーション膜2a
との間に所望の絶縁距離が確保されず、絶縁不良の原因
となる。なお、従来ではこのような絶縁不良製品の発生
率は生産量の約6%にも及ぶことから、良品率向上のた
めにその改善策が強く要望されている。In the semiconductor device having the above structure, the electrode substrate 1, the semiconductor chip 2, the spacer 4 and the solder sheet 5 can be freely moved during the reflow soldering step. Therefore, when the solder sheet 5 is melted, there are many cases where the respective parts are joined while being relatively displaced from the predetermined assembly position as illustrated. In addition, if the soldering position is displaced as described above, the passivation film 2a
A desired insulation distance cannot be ensured between them and causes insulation failure. Incidentally, in the past, the rate of occurrence of such insulation defective products has reached about 6% of the production amount, and therefore there is a strong demand for an improvement measure for improving the non-defective product rate.
【0005】本発明は上記の点にかんがみなされたもの
であり、その目的は部品の一部を改良することにより、
前記問題点を解消して位置ずれなしに部品の相互間を適
正にはんだ接合できるようにした半導体装置の組立構造
を提供することにある。The present invention has been made in view of the above points, and an object thereof is to improve a part of parts to
An object of the present invention is to provide an assembly structure of a semiconductor device which solves the above-mentioned problems and can appropriately solder-bond components to each other without displacement.
【0006】[0006]
【課題を解決するための手段】上記目的を達成するため
に、本発明は、電極基板上にスペーサを介在して半導体
チップをはんだマウントし、その周域を樹脂封止してな
る半導体装置において、前記スペーサとして基材の両面
に予備はんだ層を設けた一体形スペーサを用いて組立て
構成するものとする。また、前記構成の実施態様とし
て、電極基板の板面中央部にスペーサの位置決め用凹部
を設ける構成がある。In order to achieve the above object, the present invention provides a semiconductor device in which a semiconductor chip is solder-mounted on an electrode substrate with a spacer interposed and a peripheral region thereof is resin-sealed. The spacers are assembled and configured by using integral spacers having preliminary solder layers provided on both surfaces of the base material. Further, as an embodiment of the above configuration, there is a configuration in which a spacer positioning recess is provided in the central portion of the plate surface of the electrode substrate.
【0007】[0007]
【作用】上記の構成によれば、スペーサの両面にはスペ
ーサの基材と一体化した予備はんだ層が形成されている
ので、リフローはんだ付け工程で電極基板とスペーサ,
スペーサと半導体チップとの間に極端な位置ずれの発生
することがなくなり、これにより製品の良品率が向上す
る。また、あらかじめ電極基板の板面にスペーサの底部
が嵌り込む位置決め用の凹部を設けておくことにより、
組立ての際には電極基板に対してスペーサが定位置に拘
束保持される。したがって、続くはんだ付け工程での部
品相互の位置ずれをより一層確実に防止できる。なお、
はんだ付け工程で、電極基板上に積み重ねて載置した各
部品を所定位置に拘束して上方から押さえ付けるような
組立治具を使用すれば、より高い組立精度が得られる。According to the above structure, since the preliminary solder layer integrated with the base material of the spacer is formed on both surfaces of the spacer, the electrode substrate and the spacer,
No extreme misalignment occurs between the spacer and the semiconductor chip, which improves the yield rate of products. In addition, by providing a recess for positioning in which the bottom of the spacer fits in the plate surface of the electrode substrate in advance,
During assembly, the spacers are held in place with respect to the electrode substrate. Therefore, it is possible to more reliably prevent the positional displacement between the components in the subsequent soldering process. In addition,
In the soldering process, higher assembly accuracy can be obtained by using an assembly jig that constrains each component stacked and placed on the electrode substrate at a predetermined position and presses it from above.
【0008】[0008]
【実施例】以下本発明の実施例を図面に基づいて説明す
る。なお、実施例の各図において、図4に対応する同一
部品には同じ符号が付してある。まず、図1,図2にお
いて、電極基板1と半導体チップ2との間に介挿したス
ペーサとして、金属板,あるいは低抵抗なSi板などのス
ペーサ基材7aの上下両面にあらかじめ予備はんだ層7
b,7cを形成してなる一体形スペーサ7を採用して次
のように半導体装置を組立てるものとする。Embodiments of the present invention will be described below with reference to the drawings. In the drawings of the embodiments, the same parts corresponding to those in FIG. 4 are designated by the same reference numerals. First, in FIGS. 1 and 2, as a spacer interposed between the electrode substrate 1 and the semiconductor chip 2, a preliminary solder layer 7 is previously formed on both upper and lower surfaces of a spacer base material 7a such as a metal plate or a low resistance Si plate.
The semiconductor device is assembled as follows by using the integral spacer 7 formed by forming b and 7c.
【0009】すなわち、図2のように電極基板1の上に
前記の一体形スペーサ7,半導体チップ2,リード3を
順に積み重ねて定位置に載置し、さらに半導体チップ2
の上に壷形の組立治具8を被せて上方より加圧力を加
え、この状態でリフローはんだ付けを行う。このように
して電極基板1に半導体チップ2をはんだマウントした
後、図4と同様に半導体チップ2の周域に封止樹脂層6
をモールド成形する。That is, as shown in FIG. 2, the integral spacer 7, the semiconductor chip 2 and the lead 3 are sequentially stacked on the electrode substrate 1 and placed at a fixed position.
The pot-shaped assembling jig 8 is placed on top of the above and pressure is applied from above, and reflow soldering is performed in this state. After the semiconductor chip 2 is solder-mounted on the electrode substrate 1 in this manner, the sealing resin layer 6 is formed on the peripheral region of the semiconductor chip 2 as in FIG.
To mold.
【0010】なお、本発明によって製作された製品と従
来の製品とを比較検査したところ、従来の製品では電極
基板1に対するスペーサ4の位置ずれが6mm程度まで発
生していたのが、本発明による製品では最大でも2mm以
下に抑えられ、これにより絶縁不良発生率も従来の6%
から0.5%以下に低減して製品の歩留りが大幅に向上す
ることが確認されている。When the product manufactured according to the present invention and the conventional product were compared and inspected, it was found that in the conventional product, the displacement of the spacer 4 with respect to the electrode substrate 1 was up to about 6 mm. The product has a maximum of 2 mm or less, which results in an insulation failure rate of 6% of the conventional level.
It has been confirmed that the yield of the products is significantly improved by reducing the above to 0.5% or less.
【0011】図3は本発明の応用実施例を示すものであ
り、電極基板1の上面中央部には前記一体形スペーサ7
の外形に対応した深さの浅い凹部1aがあらかじめ形成
されている。そして、半導体装置の組立ての際に、凹部
1aを位置決め用凹部として、ここにスペーサ7を嵌め
込んで位置決め保持する。かかる構成により、電極基板
1に対してスペーサ7が所定位置に拘束保持されること
になり、続くリフローはんだ付けの際に部品相互の位置
ずれを確実に防止できる。FIG. 3 shows an applied embodiment of the present invention, in which the integral spacer 7 is provided at the center of the upper surface of the electrode substrate 1.
The shallow concave portion 1a having a depth corresponding to the outer shape of is formed in advance. Then, when assembling the semiconductor device, the recessed portion 1a is used as a positioning recessed portion, and the spacer 7 is fitted into the recessed portion 1a for positioning and holding. With such a configuration, the spacer 7 is restrained and held at a predetermined position with respect to the electrode substrate 1, and it is possible to reliably prevent positional displacement between components during subsequent reflow soldering.
【0012】[0012]
【発明の効果】以上述べたように本発明の組立構造によ
れば、電極基板上に半導体チップをはんだマウントする
はんだ付け工程で、電極基板,スペーサ,半導体チップ
の相互の位置ずれ発生を良好に防止することかでき、こ
れにより半導体チップのパッシベーション膜との間に所
要の絶縁距離を確保して製品の良品率を大幅に高めるこ
とができる。As described above, according to the assembly structure of the present invention, in the soldering step of solder-mounting the semiconductor chip on the electrode substrate, the positional displacement of the electrode substrate, the spacer and the semiconductor chip can be favorably generated. This can be prevented, whereby a required insulation distance can be secured between the passivation film of the semiconductor chip and the yield rate of products can be significantly increased.
【図面の簡単な説明】[Brief description of drawings]
【図1】本発明の実施例による半導体装置の組立構成図FIG. 1 is an assembly configuration diagram of a semiconductor device according to an embodiment of the present invention.
【図2】図1の構成におけるはんだマウント工程の説明
図FIG. 2 is an explanatory diagram of a solder mounting process in the configuration of FIG.
【図3】本発明の応用実施例を示す半導体装置の組立構
成図FIG. 3 is an assembly configuration diagram of a semiconductor device showing an application example of the present invention.
【図4】従来の組立方法で製作された半導体装置の組立
構成図FIG. 4 is an assembly configuration diagram of a semiconductor device manufactured by a conventional assembly method.
1 電極基板 2 半導体チップ 3 リード 6 封止樹脂層 7 一体形スペーサ 7a スペーサ基材 7b 予備はんだ層 7c 予備はんだ層 DESCRIPTION OF SYMBOLS 1 Electrode substrate 2 Semiconductor chip 3 Lead 6 Encapsulating resin layer 7 Integrated spacer 7a Spacer base material 7b Pre-solder layer 7c Pre-solder layer
Claims (3)
ップをはんだマウントし、その周域を樹脂封止してなる
半導体装置において、前記スペーサとして両面に予備は
んだ層を設けた一体形スペーサを用いて組立てたことを
特徴とする半導体装置の組立構造。1. A semiconductor device in which a semiconductor chip is solder-mounted with an intervening spacer on an electrode substrate, and a peripheral region thereof is resin-sealed, and an integrated spacer having a pre-solder layer on both surfaces thereof is used as the spacer. A semiconductor device assembling structure characterized by being assembled by using.
板の板面中央部にスペーサの位置決め用凹部を設けたこ
とを特徴とする半導体装置の組立構造。2. The assembly structure for a semiconductor device according to claim 1, wherein a positioning recess for spacers is provided in the center of the plate surface of the electrode substrate.
チップはプレーナ型素子であることを特徴とする半導体
装置の組立構造。3. The assembly structure according to claim 1, wherein the semiconductor chip is a planar type element.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3283371A JPH05121463A (en) | 1991-10-30 | 1991-10-30 | Assembly structure of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3283371A JPH05121463A (en) | 1991-10-30 | 1991-10-30 | Assembly structure of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH05121463A true JPH05121463A (en) | 1993-05-18 |
Family
ID=17664635
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3283371A Pending JPH05121463A (en) | 1991-10-30 | 1991-10-30 | Assembly structure of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH05121463A (en) |
-
1991
- 1991-10-30 JP JP3283371A patent/JPH05121463A/en active Pending
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