JPH0969618A - Ccd solid-state image pickup device chip package and its packaging method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a CCD solid-state image pickup device chip package which has such a structure that the short-circuiting between a chip and a lead may occur at the time of packaging of the chip and transparent insulation plate and a packaging method therefor. SOLUTION: The package is provided with a chip 12 having a CCD solid-state image pickup device, a lead 32 connected with an electrode pad 14 of the chip, and a transparent insulation plate 34 facing the chip and interposing the lead between the chip and itself, and the peripheral parts of the chip and transparent insulation plate including the lead penetrated part are together sealed with a sealing agent. The lead 32 has such a shape that the interval between the chip 12 and itself becomes larger toward the outside of electrode pad joint end of the lead 32. The outer size of the plate 34 is slightly larger than that of the chip 12, and the outer edge of the plate 34 is aligned with that of the electrode pad of the chip 12 or it is positioned slightly outside therefrom.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a CCD solid-state image pickup device package and a sealing method, and more particularly, to a CC
The present invention relates to a CCD solid-state image pickup device package and a method for sealing the same, in which an edge short circuit that tends to occur between a chip on which a D solid-state image pickup device is formed and a lead for external connection of a chip electrode is prevented.

[0002]

2. Description of the Related Art The structure of a conventional CCD solid-state image pickup device package will be described with reference to FIG. As shown in FIG. 7, a conventional CCD solid-state imaging device package 10 (hereinafter simply referred to as CCD package 10) includes a chip 12 (hereinafter simply referred to as a chip 1) on which a CCD solid-state imaging device is formed.
2) and the Au bump 1 on the electrode pad of the chip 12.
A lead 16 made of Cu, which is connected by 4 and extends straight in the outer horizontal direction, and which has the same dimensions as the chip 12 and faces the chip 12;
And a plate-shaped glass lid 18 sandwiching 6 between them. The glass lid 18 has the same plane outside dimension as the plane outside dimension of the chip 12, and is provided to protect the surface of the chip 12 and ensure reliability. Further, in the CCD package 10, the peripheral portions of the chip 12 and the glass lid 18 are sealed with each other by the sealant 22 including the lead penetrating portion so as to make the effective area of the chip 12 into the hollow portion 20, The height of the portion is maintained by the thickness of the lead 16. Further, the entire CCD package 10 may be sealed with resin except for the central portion of the glass lid 18.

In the conventional method of manufacturing the CCD package 10, first, as shown in FIG. 8, leads 16 of a lead frame (not shown) are bonded to Au bumps 14 formed on the electrode pads of the chip 12. Bonding is usually tape bonding (TAB, Tape Automat
ed Bonding). Next, the sealant 22 is applied to the peripheral portion of the glass lid 18 with a dispenser or the like, and the chip 12 and the glass lid 18 are aligned so that the sealant 22 is placed on the peripheral portion of the chip 12 to which the leads 16 are bonded. Subsequently, the glass lid 18 is placed on the chip 12, and the glass lid 18 is pressed to bring it into a pressure-bonded state. When the sealant 22 is a thermosetting resin, the combination of the chip 12 and the glass lid 18 is subjected to heat curing to cure the sealant 22, and when the sealant 22 is a UV curable resin, the chip is cured. 12 and the glass lid 18 are subjected to UV exposure to give a sealant 2
Cure 2 As a result, the CCD package 10 shown in FIG. 7 can be obtained.

[0004]

However, conventional CCDs
In the package 10, when the glass lid 18 is pressure-bonded to the chip 12, as shown in FIG. 9, the peripheral portion of the glass lid 18 contacts the lead 16 due to the force pressing the glass lid 18, and the lead 16 contacts the chip 12. It deforms so as to bend to the side, and as a result, the lead 16 and the outer edge portion of the chip 12 often come into contact with each other. As a result, the chips are electrically short-circuited and the characteristics of the CCD solid-state imaging device are deteriorated, resulting in a decrease in the product yield of the chips. This problem is occurring more and more frequently as the CCD package becomes smaller and thinner, and it is desired to solve it promptly.

In view of the above situation, the object of the present invention is to
(EN) A CCD solid-state imaging device package having a structure that prevents short-circuiting between a chip and a lead when the chip and a transparent insulating plate are sealed, and a sealing method thereof.

[0006]

In order to achieve the above object, a CCD solid-state image pickup device package according to the present invention (hereinafter referred to as a first invention) includes a chip on which the CCD solid-state image pickup device is formed, and a chip. And a transparent insulating plate facing the chip and having a lead interposed between the chip and the chip, and the peripheral portion of the chip and the transparent insulating plate including the lead penetrating portion. In a CCD solid-state imaging device package that is mutually sealed, the lead has a shape such that the gap between the lead and the chip increases outward from the bonding end of the electrode pad of the lead, and the transparent insulating plate has an outer edge. The dimension is slightly smaller than the outer edge dimension of the chip, and the outer edge of the transparent insulating plate is positioned to be the same as or slightly outside the outer edge of the electrode pad of the chip.

Since the lead has a shape as described above, the distance between the lead and the edge of the chip becomes large, and as described above, the outer edge size of the transparent insulating plate is smaller than that of the chip, and the outer edge of the transparent insulating plate is made smaller. Since the transparent insulating plate is aligned on the chip so that is located at the outer edge of the electrode pad or slightly outside, when the transparent insulating plate is pressure-bonded to the chip, the transparent insulating plate is located outside the electrode pad connection part. Do not touch the other lead part. Therefore, in the CCD solid-state imaging device package according to the present invention, unlike the conventional case, the outer edge of the transparent insulating plate does not contact the lead to press the lead and deform it toward the chip side. It is possible to solve the conventional problem that the lead and the chip make a short-circuit contact.

Further, in another CCD solid-state image pickup device package according to the present invention (hereinafter referred to as the second invention), the lead has a larger gap between the lead and the chip as it goes outward from the bonding end of the electrode pad. The transparent insulating plate is chamfered so that the peripheral surface of the transparent insulating plate facing the chip matches the shape of the lead.

In the case of the second invention, the planar outer dimension of the transparent insulating plate may be substantially the same as the planar outer dimension of the chip. Since the lead has a shape as described above, the distance between the lead and the edge of the chip is large, and since the lower surface of the peripheral portion of the transparent insulating plate is chamfered as described above, the transparent insulating plate is mounted on the chip. When aligned and pressure-bonded, the transparent insulating plate does not come into contact with the portion outside the lead from the electrode pad connecting portion. Therefore, in the CCD solid-state imaging device package according to the present invention, unlike the conventional case, the outer edge of the transparent insulating plate does not contact the lead to press the lead and deform it toward the chip side. It is possible to solve the conventional problem that the lead and the chip make a short-circuit contact.

Further, another CCD solid-state image pickup device package according to the present invention (hereinafter referred to as a third invention) has an insulating property between a lead portion sandwiched between a chip and a transparent insulating plate and the chip. It is characterized in that a spacer made of a material is interposed. In the CCD solid-state imaging device package according to the present invention, when the transparent insulating plate is aligned and pressure-bonded on the chip, even if the outer edge of the transparent insulating plate comes into contact with the portion outside the lead from the electrode pad connection portion, the lead Since the lead is supported by the spacer interposed between the portion and the chip, the lead is not deformed toward the chip. Therefore, the present invention can solve the conventional problem that the lead and the chip make a short-circuit contact.

In the method for sealing a CCD solid-state image pickup device package according to the first aspect of the invention, a transparent insulating plate is placed on a chip with leads bonded by tape, and the peripheral parts of the chip and the transparent insulating plate are sealed to each other including the lead penetrating portion. When sealing with an agent, apply a sealant for sealing on the lower surface of the peripheral part of the transparent insulating plate having an outer edge dimension slightly smaller than the outer edge dimension of the chip, and the outer edge of the transparent insulating plate is the electrode pad of the chip. Position the transparent insulating plate on the chip so that it is at the same position as the outer edge or slightly outward, and hold the chip and lead frame so that the lower surface of the lead frame is higher than the upper surface of the lead. It is characterized in that the sealing agent is cured while pressing the transparent insulating plate against the chip.

The transparent insulating plate used in the present invention has a plane outer dimension (width) of 3 to 5 mm square, and the plane outer dimension is about 0.2 mm to 0.4 mm on one side of the chip outer dimension. Small. The lead used in the present invention may be preformed in such a shape that the gap between the lead and the chip becomes larger as it goes outward from the electrode pad bonding end of the lead, and a flat lead frame is used. You may shape in such a shape by changing the height which hold | maintains a lead frame, and pressing a transparent insulating plate.
In the method of the present invention, when the chip and the lead frame are held, the height of the lower surface of the lead frame is usually set higher than the upper surface of the lead by about 0.1 mm to 0.3 mm. At this time, the distance between the electrode joining end of the lead and the holding point of the lead frame is about 5 to 10 mm. When the sealing agent is a thermosetting resin, heat curing is performed, and when the sealing agent is a UV curing resin, UV exposure is performed, whereby the sealing agent can be cured.

In the method for sealing a CCD solid-state image pickup device package of the second invention, the lower surface of the peripheral portion of the transparent insulating plate is chamfered, and a sealing agent for sealing is provided inside the chamfered processing area of the lower surface of the transparent insulating plate. Position the transparent insulating plate on the chip so that the sealant applied to the transparent insulating plate is located in the outer area of the electrode pad of the chip, and the lower surface of the lead frame is higher than the upper surface of the lead. As described above, the sealing agent is cured while the transparent insulating plate is pressed against the chip while holding the chip and the lead frame.

[0014]

Embodiments of the present invention will be described below in detail with reference to the accompanying drawings.

[0015]

Embodiment 1 FIG. 1 shows a CCD solid-state image pickup device package according to the first invention (hereinafter, simply referred to as CCD solid-state image pickup device package).
FIG. 3 is a schematic cross-sectional view showing the configuration of Example 1 (referred to as a package). 1 to 6 are the same as those in FIGS. 7 to 9, and the description thereof will be omitted. The CCD package 30 of this embodiment is the chip 12
, A lead 32 made of Cu, and a glass lid 34.

The lead 32 is the Au bump 1 of the chip 12.
Au of the lead 32 when viewed in a direction orthogonal to the plane having
The bump bonding end 36 is bent so that it is closer to the chip 12 side than the other end (outer lead) 38. In other words, the lead 32 is
The shape is such that the gap with the chip 12 increases from the Au bump bonding end 14 toward the outside.
With the other end 38 separated from the TAB tape,
The height difference H between the upper surface of the Au bump bonding end 36 and the lower surface of the other end 38 of the lead 32 when the chip 12 is placed on a horizontal plane is about 0.1 mm to 0.3 mm. The planar outer dimension (width) of the glass lid 34 is such that the planar outer dimension of the chip 12 is 3 to
Assuming that it is 5 mm, it is about 0.
It is smaller than 2 mm to 0.4 mm, so that when the glass lid 34 is placed on the chip 12, the outer edge portion of the glass lid 34 comes to almost the same position as the line connecting the outer edges of the Au bumps 14 of the chip 12, Or located slightly outside. Peripheral portions of the chip 12 and the glass lid 34 are sealed with a sealant 22 and a central portion thereof is configured as a hollow portion 20.

Next, with reference to FIG. 2 and FIG. 3, a crimping process of the chip 12 and the glass lid 34 in manufacturing the CCD package 30 will be described. As shown in FIG. 2, the leads 32 formed in the above-described shape are tape-bonded onto the Au bumps 14 of the chip 12. On the other hand, chip 1
The sealing agent 22 is applied to the lower surface of the peripheral portion of the glass lid 34 facing the 2 by a dispenser or the like. Next, as shown in FIG. 3, the chip 12 is placed on the mounting table A, and the TAB tape (not shown) of the leads 32 is further mounted on the support table B. Then, after aligning the chip 12 and the glass lid 34 so that the sealing agent 22 is placed on the peripheral portion of the chip 12, the glass lid 34 is pressure-bonded onto the chip 12.

At this time, as shown in FIG. 3, the holding height of the TAB tape is higher than the height of the lower surface of the glass lid 34, and T
The TAB tape and the chip 12 are held so that the height difference h between the lower surface of the AB tape and the lower surface of the glass lid 34 is about 0.1 mm to about 0.3 mm. The horizontal distance between the holding point 38 of the TAB tape and the Au bump bonding end 36 of the lead is about 5 to 10 mm. The lead 34 may have a preformed shape so that such a difference in height may occur, and a TAB tape having an ordinary flat shape lead may be used. The chip 12 and the TAB tape may be supported so that the above-mentioned height difference can be obtained. Then, when the necessary curing treatment is performed depending on whether the sealant 22 is thermosetting or UV curable,
The peripheral portion between the chip 12 and the glass lid 34 is sealed with the sealant 22, and C according to the present invention as shown in FIG.
The CD package 30 can be obtained.

In the CCD package 30 of the first embodiment, since the leads 32 are bent in the above-mentioned shape, the gap between the leads 32 and the outer edge portion of the chip 30 becomes larger toward the outside and the glass is formed. The outer edge of the lid 34 is located substantially at the outer edge of the Au bump 14 of the chip 12. Therefore, even when the glass lid 34 is pressure-bonded to the chip 12,
The leads 32 do not come into contact with the outer edge of the chip 12 to cause a short circuit phenomenon or to deteriorate the characteristics of the CCD solid-state imaging device.

Embodiment 2 FIG. 4 is a schematic sectional view showing the glass lid 42 used in Embodiment 2 of the CCD package according to the second invention, and FIG. 5 is a schematic view showing the structure of the CCD package 40 of Embodiment 2. FIG. The CCD package 40 of this embodiment is
The glass lid 42 shown in FIG. 4 is used instead of the glass lid 34 of the first embodiment. The glass lid 42 has a plane outer dimension that is substantially the same as the plane outer dimension of the chip 12, and a surface 44 that faces the chip 12 in its peripheral portion.
Is chamfered (M). At this time, when the chip 12 of the CCD package 40 and the TAB tape were held as shown in FIG. 3 while maintaining the h dimension shown in FIG. 3, the lower surface of the peripheral portion of the glass lid 42 conformed to the shape of the lead 32. It is chamfered so that it has a shape.

With the above configuration, the CCD package 40
Then, even when the glass lid 34 is pressure-bonded to the chip 12, the gap between the lead 32 and the outer edge of the chip 30 becomes large, and the lead 32 comes into contact with the outer edge of the chip 12 to cause a short circuit phenomenon, or a CCD solid state. The characteristics of the image sensor are not deteriorated.

Embodiment 3 This embodiment is an embodiment of the CCD package of the third invention, and FIG. 6 (a) is a schematic sectional view of the CCD package 50 of Embodiment 3 including a lead, FIG. (B) CCD
FIG. 6 is a schematic cross-sectional view of a cross section of the package 50 not including the leads. The CCD package 50 of this embodiment is similar to that of the conventional CCD package 10 shown in FIG.
As shown in (a), a spacer 52 made of, for example, quartz and formed of an insulating material between the lead 16 and the chip 12.
It has. The height of the spacer 52 is equal to the height of the Au bump 14.
It has almost the same height as. A space between the Au bump 14 and the spacer 52 is sealed with a sealant 22.
Further, in the cross section that does not include the lead 16, the peripheral portion between the chip 12 and the glass lid 18 is sealed with a sealant 22 as shown in FIG. 6B.

With the above configuration, the CCD package 50
Then, even if a pressing force acts on the lead 16 when the glass lid 18 is pressure-bonded to the chip 12, since the spacer 52 supports the lead 16, the lead 16 is deformed and the chip 12 is deformed.
It is prevented from contacting the outer edge of the. Therefore, lead 1
There is no possibility that 6 contacts the outer edge of the chip 12 to cause a short circuit phenomenon or to deteriorate the characteristics of the CCD solid-state image sensor.

[0024]

According to the first aspect of the present invention, the lead has a shape such that the gap between the lead and the chip increases toward the outside from the electrode pad joint end, and the outer edge dimension is smaller than the outer edge dimension of the chip. And a small transparent insulating plate, and the outer edge of the transparent insulating plate is located at or slightly outside the outer edge of the electrode pad of the chip. Even when pressure-bonded to the chip, the leads do not come into contact with the outer edge of the chip to cause a short-circuit phenomenon or to deteriorate the characteristics of the chip.

According to the second aspect of the invention, the lead having a shape such that the gap between the lead and the chip becomes larger from the bonding end of the electrode pad toward the outside, and the surface facing the chip is chamfered. By including the transparent insulating plate, the CCD solid-state imaging device package according to the present invention, when the transparent insulating plate is pressure-bonded to the chip, leads contact the outer edge portion of the chip to cause a short circuit phenomenon, and It does not cause deterioration of characteristics.

When the CCD solid-state image pickup device package according to the present invention is applied, the edge short-circuit phenomenon that occurs in the conventional CCD solid-state image pickup device package does not easily occur even if the package is made smaller and thinner. Therefore, the product yield is improved and stable productivity can be secured.

[Brief description of drawings]

FIG. 1 is a schematic cross-sectional view showing a configuration of a CCD solid-state imaging device package according to a first embodiment of the present invention.

FIG. 2 is a diagram illustrating a process of sealing a glass lid and a chip in the CCD package of FIG.

FIG. 3 is a diagram illustrating a sealing process subsequent to FIG.

FIG. 4 is a schematic cross-sectional view showing a cross section of a glass lid of a second embodiment of a CCD solid-state imaging device package according to the present invention.

FIG. 5 is a schematic cross-sectional view showing a configuration of a CCD solid-state imaging device package according to a second embodiment of the present invention.

6 (a) and 6 (b) are schematic cross-sectional views each showing a main part configuration of a CCD solid-state imaging device package according to a third embodiment of the present invention.

FIG. 7 is a schematic cross-sectional view showing a configuration of a conventional CCD solid-state imaging device package.

FIG. 8 is a diagram illustrating a sealing process of a glass lid and a chip in a conventional CCD solid-state imaging device package.

FIG. 9 is a cross-sectional view of a CCD solid-state imaging device package for explaining a problem in the conventional CCD solid-state imaging device package.

[Explanation of symbols]

 10 Conventional CCD solid-state imaging device package 12 Chip 14 Au bumps 16, 32 Leads 18, 34, 42 Glass lid 20 Hollow part 22 Sealant 30 CCD solid-state imaging device package of Example 1 36 Lead Au bump bonding end 38 Lead Support point of frame 40 CCD solid-state image pickup device package of Example 2 44 Face of glass lid facing chip 50 CCD solid-state image pickup device package of Example 3 52 Spacer

Claims (6)

[Claims] 1. A chip on which a CCD solid-state imaging device is formed, a lead connected to an electrode pad of the chip, and a transparent insulating plate facing the chip and having a lead interposed between the chip and the transparent insulating plate. And the peripheral portions of the chip and the transparent insulating plate are sealed together including the lead penetration portion.
In the CD solid-state image pickup device package, the lead has a shape such that the gap between the lead and the chip increases outward from the electrode pad bonding end of the lead, and the transparent insulating plate has an outer edge dimension larger than the outer edge dimension of the chip. A CCD solid-state imaging device package, which is slightly smaller, and the outer edge of the transparent insulating plate is located at or slightly outside the outer edge of the electrode pad of the chip. 2. A chip on which a CCD solid-state image sensor is formed, a lead connected to an electrode pad of the chip, and a transparent insulating plate facing the chip and having a lead interposed between the chip and the transparent insulating plate. And the peripheral portions of the chip and the transparent insulating plate are sealed together including the lead penetration portion.
In the CD solid-state imaging device package, the lead has a shape such that the gap between the lead and the chip increases outward from the electrode pad bonding end of the lead, and the transparent insulating plate faces the chip in the peripheral portion. A CCD solid-state image pickup device package, wherein is chamfered so as to match the shape of the lead. 3. A chip on which a CCD solid-state imaging device is formed, a lead connected to an electrode pad of the chip, and a transparent insulating plate facing the chip and having a lead interposed between the chip and the transparent insulating plate. And the peripheral portions of the chip and the transparent insulating plate are sealed together including the lead penetration portion.
A CCD solid-state imaging device package, characterized in that a spacer made of an insulating material is interposed between the chip and a chip sandwiched between a chip and a transparent insulating plate. 4. The CCD solid-state image pickup device package according to claim 1, wherein the transparent insulating plate is a glass plate and the leads are Cu leads. 5. A method for sealing a CCD solid-state image pickup device package, which comprises sealing a chip on which a CCD solid-state image pickup device is formed, wherein a transparent insulating plate is overlaid on a chip to which leads are tape-bonded. When the peripheral parts of the insulating plate, including the lead penetrating parts, are mutually sealed with a sealant, a sealing seal is applied to the lower surface of the peripheral part of the transparent insulating plate that has an outer edge dimension slightly smaller than the outer edge dimension of the chip. Apply the agent, position the transparent insulating plate on the chip so that the outer edge of the transparent insulating plate is the same as the outer edge of the electrode pad of the chip or slightly outside, and place the lower surface of the lead frame on the lead. A CCD solid-state image sensor package characterized by curing a sealant while pressing a transparent insulating plate against a chip while holding the chip and a lead frame at a position higher than the upper surface. The method of sealing. 6. A method for encapsulating a CCD solid-state imaging device package, which comprises encapsulating a chip on which a CCD solid-state imaging device is formed. When sealing the peripheral parts of the insulating plate, including the lead penetrating parts, with a sealant, chamfer the lower surface of the peripheral part of the transparent insulating plate, and place it inside the chamfered area on the lower surface of the transparent insulating plate. Apply the sealing agent for sealing, position the transparent insulating plate on the chip so that the sealing agent applied to the transparent insulating plate is located outside the electrode pad of the chip, and place the lower surface of the lead frame on the lead. CCD solid-state image sensor device characterized by curing the sealant while pressing the transparent insulating plate against the chip while holding the chip and the lead frame at a position higher than the upper surface of the chip. Package sealing method.