JP4729825B2 - Image sensor - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to an image pickup device used for a TV camera or the like, and more specifically, an inner lead is bonded to a surface electrode of a semiconductor chip constituting the image pickup device, and an optical surface for image pickup of the semiconductor chip is made of a transparent protective member. The present invention relates to an improvement of an imaging element that is covered and packaged.
[0002]
[Prior art]
In the imaging device, an on-chip lens for condensing incident light toward a photosensor unit for imaging pixel configuration is provided in the imaging region, and the imaging device is further provided to protect the on-chip lens. The imaging region is covered with a transparent protective member such as glass.
As a method for adhering the transparent protective member to the image pickup element, a transparent resin material is applied to the entire surface including the on-chip lens of the image pickup element, and the transparent protective member is attached to the image pickup element with the resin material. . In this case, since the refractive indexes of the on-chip lens and the resin material are approximate, the condensing action of the on-chip lens is deteriorated by the resin material.
Therefore, a resin material is applied to the peripheral portion corresponding to the non-imaging area of the imaging element excluding the imaging area of the imaging element, and a transparent protective member is attached to the imaging element with this resin material, and the on-chip lens of the imaging element is transparent. A space is formed between the member members.
[0003]
Hereinafter, a conventional image sensor will be described with reference to FIGS.
FIG. 3 is a plan view of a conventional image sensor, and FIG. 4 is a side view thereof.
3 and 4, the imaging element 30 has a rectangular semiconductor chip 32 constituting the imaging element 30, and a rectangular imaging region 321 is provided at the center of the semiconductor chip 32, and the periphery of the semiconductor chip 32. Is provided with a non-imaging area 322 so as to surround the imaging area 321.
The imaging region 321 is provided with an on-chip lens 323 for condensing incident light toward each photosensor unit (not shown) provided in a matrix on the semiconductor chip 32. A plurality of inner leads 324 connected to the surface electrodes 325 of the semiconductor chip 32 are provided on the opposite sides of the non-imaging region 322 so as to protrude from the semiconductor chip 32.
[0004]
In FIG. 4, reference numeral 34 denotes a transparent protective member such as glass that covers the imaging region 321 and the non-imaging region 322 of the semiconductor chip 32, and this transparent protection member 34 is made of semiconductor by a transparent resin material 36 applied to the non-imaging region 322. Bonded to the chip 32. In this case, the inner lead 324 is sandwiched between the semiconductor chip 32 and the transparent protective member 34, and the gap between the non-imaging region 322 of the semiconductor chip 32 and the transparent protective member 34 is sealed by curing the resin material 36. It is configured to be.
[0005]
[Problems to be solved by the invention]
In the conventional imaging device configured as described above, since a space is formed between the on-chip lens 323 of the semiconductor chip 32 and the transparent member 34, the condensing of the on-chip lens 323 facing through this space. The effect is not deteriorated.
However, when the transparent member 34 is attached, the resin material 36A applied to the side of the non-imaging region 322 without the inner lead 324 passes through the gap between the transparent member 34 and the semiconductor chip 32 as shown in FIG. It flows to the lens 323 side and partially covers the peripheral portion of the on-chip lens 323. As a result, there is a problem that the lens condensing function of this portion is deteriorated and the sensitivity is also lowered.
In view of this, a certain amount of resin material is provided in the periphery of the semiconductor chip 32, or the resin material 36 is temporarily cured to suppress the spread of the resin material, and then the transparent protective member 34 is bonded.
However, providing a certain amount or more of the allowance has a problem that the semiconductor chip 32 becomes large and the image pickup device becomes large. In addition, once the resin material 36 is temporarily cured, the wettability thereof is lowered, so that an air path is likely to be generated at a portion where the resin material 36 is bonded to the transparent protective member 34, and moisture in the air enters from the air path to corrode the image sensor. In addition to the problem of causing dust, there is a problem of creating a shadow when dust enters.
[0006]
The present invention has been made to solve the above-described problems, and it is possible to prevent the resin material applied to the periphery of the semiconductor chip from entering the imaging area of the semiconductor chip when the transparent protective member is attached. An object of the present invention is to provide an imaging device that can be prevented and miniaturized.
[0007]
[Means for Solving the Problems]
In order to achieve the above object, the present invention provides an imaging region and a semiconductor chip having a non-imaging region provided so as to surround the imaging region, and a longitudinal direction of the non-imaging region in a part of the non-imaging region A plurality of surface electrodes provided at predetermined intervals, a plurality of inner leads connected to each of the surface electrodes, and an optical member provided in the imaging region and collecting incident light to the imaging region And a thin plate-like transparent protective member that is overlaid on the semiconductor chip including the inner lead so as to cover the upper surface of the optical member, and is bonded by a sealing and resin material applied to the non-imaging region. In the imaging device provided, the resin material flows to the optical member between the non-imaging region where the inner lead is not provided and the transparent protective member facing the non-imaging region. Interposed suppression member for locking, the restraining member is made of a dummy lead having the same thickness and the inner lead, one end of the dummy lead is interposed between the transparent protective member and the non-imaging area, The other end of the dummy lead is configured to protrude out of the semiconductor chip .
[0008]
In the present invention, since the deterring member is interposed between the non-imaging region where the inner lead is not provided in the semiconductor chip and the transparent protective member facing the non-imaging region, the deterring member causes the coating resin material to be the semiconductor chip. Intrusion into the imaging area can be prevented in advance.
[0009]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.
FIG. 1 is a plan view of an image sensor according to the present invention, and FIG. 4 is a side view thereof.
[0010]
In FIG. 1 and FIG. 2, the image pickup device 10 has a rectangular semiconductor chip 12 constituting the same, and a rectangular image pickup region 121 is provided at the center of the semiconductor chip 12, and the periphery of the semiconductor chip 12. Is provided with a non-imaging area 122 so as to surround the imaging area 121.
In the imaging region 121, an on-chip lens (corresponding to an optical member recited in claims) for condensing incident light toward each photosensor unit (not shown) provided in a matrix on the semiconductor chip 12. 123 is provided. A plurality of surface electrodes 125 are provided at predetermined intervals in the longitudinal direction of the non-imaging region 122A on both opposing sides of the non-imaging region 122A on the long side of the semiconductor chip 12. One end of each inner lead 124 is connected to the surface electrode 125, and the other end of each inner lead 124 protrudes outside the semiconductor chip 12.
[0011]
In FIG. 2, reference numeral 14 denotes a transparent protective member such as glass that covers the imaging region 121 and the non-imaging region 122 of the semiconductor chip 12. The transparent protective member 14 is made of a transparent resin material 16 applied to the non-imaging region 122. Bonded to the non-imaging region 122 of the chip 12. In this case, the inner lead 124 is sandwiched between the semiconductor chip 12 and the transparent protective member 14, and the gap between the non-imaging region 122 of the semiconductor chip 12 and the transparent protective member 14 is sealed with the transparent resin material 16. It is configured.
[0012]
Further, a fluid resin material applied between the opposite sides of the non-imaging region 122B on the short side of the semiconductor chip 12 where the inner lead 124 is not provided and the transparent protective member 14 facing the opposite side. A restraining member 18 that inhibits the flow to the 16 on-chip lenses 123 is interposed.
The restraining member 18 includes a plurality of spacer pieces having the same thickness and the same shape as the inner lead 124, i.e., dummy leads 181, and one end of the dummy lead 181 has a non-imaging region 122 where the inner lead 124 is not provided, It is interposed between the transparent protective member 14 opposed to the transparent protective member 14 in parallel with a predetermined interval in the longitudinal direction of the non-imaging region 122, and is fixed by curing of the resin material 16. The other end of the dummy lead 181 protrudes outside the semiconductor chip 12.
[0013]
The dummy lead 181 is made of the same material as the inner lead 124, such as copper or 42 alloy. The dummy lead 181 may have other shapes and materials as long as the thermal contraction rate is substantially the same as that of the inner lead 124. In this case, it is necessary to consider the adhesion with the applied resin material 16.
In addition, the arrangement interval of the inner leads 124 and the dummy leads 181 in this embodiment is about 0.5 mm, but is set to an interval at which the resin material 16 can enter a necessary portion by capillary action. This distance is changed depending on the gap between the semiconductor chip 12 and the transparent protective member 14 and the viscosity and thixotropy of the resin material 16.
[0014]
Note that the resin material 16 has fluidity when applied when the transparent protective member 14 is applied, and thus, the gap between the semiconductor chip 12 corresponding to the non-imaging region 122 and the transparent protective member 14 and the inner The gap between the lead 124 and the dummy lead 181 can be easily penetrated by capillarity, and when the fluid resin material 16 has penetrated to a necessary position, the resin material is cured by heat or ultraviolet rays and sealed. It comes to stop.
[0015]
According to the imaging element configured as described above, the opposite side 122B of the non-imaging region 122 on the short side where the inner lead 124 is not provided in the semiconductor chip 12 and the transparent protective member 14 facing the both sides 122B. Since the suppression member 18 having a plurality of dummy leads 181 arranged at a predetermined interval is sandwiched therebetween, the applied resin material 16 flows into and enters the on-chip lens 123 by the dummy leads 181. Can be suppressed. Accordingly, it is possible to prevent the resin material 16 applied to the peripheral portion of the semiconductor chip 12 from entering the imaging region of the semiconductor chip 12 when the transparent protective member 14 is attached, and to paste the resin material 16. The cost can be reduced, and the semiconductor chip 12 can be reduced, so that the image pickup device can be reduced in size.
[0016]
Further, according to this embodiment, since the thickness of the dummy lead 181 is the same as the thickness of the inner lead 124, the flatness of the transparent protective member 14 is improved, and the dimensional accuracy of the image sensor can be improved. .
Further, by connecting the dummy lead 181 to the ground, the electrostatic strength of the image sensor can be improved, and the adsorption of floating dust can be reduced by the charge eliminating effect of the image sensor. Further, the noise resistance of the image sensor can be improved by using the dummy lead 181 as a power supply line.
[0017]
In the above-described embodiment, the imaging element having the inner leads 124 on both sides 122A facing each other of the non-imaging region 122 on the long side of the semiconductor chip 12 has been described, but the present invention is not limited to this. The present invention can also be applied to a single line type imaging device having an inner lead on one side of the semiconductor chip 12.
[0018]
【The invention's effect】
As described above, according to the imaging device according to the present invention, the resin material applied to the peripheral portion of the semiconductor chip when the transparent protective member is attached can be prevented from entering the imaging area of the semiconductor chip. Miniaturization of the image sensor can be easily realized.
[Brief description of the drawings]
FIG. 1 is a plan view of an image sensor according to the present invention.
FIG. 2 is a side view of FIG.
FIG. 3 is a plan view of a conventional image sensor.
4 is a side view of FIG. 3. FIG.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 10 ... Imaging device, 12 ... Semiconductor chip, 121 ... Imaging area, 122 ... Non-imaging area, 123 ... On-chip lens, 124 ... Inner lead, 125 ... Surface electrode, 14 ... Transparent protective member , 16 ... Resin material, 18 ... Deterring member, 181 ... Dummy lead.

Claims (3)

A semiconductor chip having an imaging area and a non-imaging region provided so as to surround the periphery of the imaging area,
A plurality of surface electrodes disposed at predetermined intervals in the longitudinal direction of the non-imaging area in a part of the non-imaging area,
A plurality of inner leads respectively connected to the surface electrodes;
An optical member for condensing the incident light to the imaging area provided in the imaging area,
An imaging device comprising: a thin plate-like transparent protective member that is overlaid on the semiconductor chip including the inner lead so as to cover an upper surface of the optical member and is bonded by a sealing resin material applied to the non-imaging region. In the element
A deterring member that inhibits the flow of the resin material to the optical member is interposed between the non-imaging region where the inner lead is not provided and the transparent protective member facing the non-imaging region ;
The restraining member is a dummy lead having the same thickness as the inner lead,
An imaging device, wherein one end of the dummy lead is interposed between the non-imaging region and the transparent protective member, and the other end of the dummy lead protrudes out of the semiconductor chip . The dummy leads the imaging device according to claim 1, wherein a plurality of parallelly arranged at predetermined intervals in the longitudinal direction of the non-imaging area.   The imaging device according to claim 1, wherein the optical member is an on-chip lens.

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