JPH0510760B2 - - Google Patents

Info

Publication number
JPH0510760B2
JPH0510760B2 JP59097835A JP9783584A JPH0510760B2 JP H0510760 B2 JPH0510760 B2 JP H0510760B2 JP 59097835 A JP59097835 A JP 59097835A JP 9783584 A JP9783584 A JP 9783584A JP H0510760 B2 JPH0510760 B2 JP H0510760B2
Authority
JP
Japan
Prior art keywords
sense
bit line
sense amplifier
switching elements
semiconductor memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59097835A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60242582A (ja
Inventor
Takayuki Ootani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP59097835A priority Critical patent/JPS60242582A/ja
Publication of JPS60242582A publication Critical patent/JPS60242582A/ja
Publication of JPH0510760B2 publication Critical patent/JPH0510760B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
JP59097835A 1984-05-16 1984-05-16 半導体記憶装置のセンス増幅器 Granted JPS60242582A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59097835A JPS60242582A (ja) 1984-05-16 1984-05-16 半導体記憶装置のセンス増幅器

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59097835A JPS60242582A (ja) 1984-05-16 1984-05-16 半導体記憶装置のセンス増幅器

Publications (2)

Publication Number Publication Date
JPS60242582A JPS60242582A (ja) 1985-12-02
JPH0510760B2 true JPH0510760B2 (enrdf_load_stackoverflow) 1993-02-10

Family

ID=14202772

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59097835A Granted JPS60242582A (ja) 1984-05-16 1984-05-16 半導体記憶装置のセンス増幅器

Country Status (1)

Country Link
JP (1) JPS60242582A (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0268796A (ja) * 1988-09-02 1990-03-08 Fujitsu Ltd 半導体記憶装置
EP0405411B1 (en) * 1989-06-26 1995-11-15 Nec Corporation Semiconductor memory having improved data readout scheme
JPH04368694A (ja) * 1991-06-17 1992-12-21 Nec Corp 感知増幅器

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2317497C2 (de) * 1973-04-06 1975-02-13 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zum Betrieb eines Fünf-Transistoren-Speicherelementes
JPS6016035B2 (ja) * 1977-03-04 1985-04-23 日本電気株式会社 増巾回路
JPS5525858A (en) * 1978-08-11 1980-02-23 Nec Corp Memory unit

Also Published As

Publication number Publication date
JPS60242582A (ja) 1985-12-02

Similar Documents

Publication Publication Date Title
US20030193824A1 (en) Semiconductor memory device
US4125878A (en) Memory circuit
US5892724A (en) NAND-type dynamic RAM having temporary storage register and sense amplifier coupled to multi-open bit lines
JPH06302189A (ja) 半導体記憶装置
US7630273B2 (en) Semiconductor integrated circuit
US6549470B2 (en) Small signal, low power read data bus driver for integrated circuit devices incorporating memory arrays
US4769792A (en) Semiconductor memory device with voltage bootstrap
US4630240A (en) Dynamic memory with intermediate column derode
US4680734A (en) Semiconductor memory device
US7006403B2 (en) Self timed bit and read/write pulse stretchers
JPH0587916B2 (enrdf_load_stackoverflow)
US5384504A (en) Sense amplifier powered from bit lines and having regeneratively cross-coupling means
EP0166642A2 (en) Block-divided semiconductor memory device having divided bit lines
USRE34026E (en) CMOS sense amplifier with N-channel sensing
EP0508354B1 (en) Semiconductor memory with reduced peak current
US7345927B2 (en) Semiconductor integrated circuit device
WO1985002314A2 (en) Semiconductor memory
JPH0510760B2 (enrdf_load_stackoverflow)
KR100318464B1 (ko) 재쓰기회로를갖는스태틱램디바이스
JPH07169261A (ja) 半導体記憶装置
US6643214B2 (en) Semiconductor memory device having write column select gate
JPH0690875B2 (ja) 半導体記憶回路
JP2000195276A (ja) 半導体記憶装置
KR100218305B1 (ko) 분산형 센스앰프를 갖는 디램
JPH07244986A (ja) 半導体記憶装置

Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term