JPH049388B2 - - Google Patents
Info
- Publication number
- JPH049388B2 JPH049388B2 JP17932380A JP17932380A JPH049388B2 JP H049388 B2 JPH049388 B2 JP H049388B2 JP 17932380 A JP17932380 A JP 17932380A JP 17932380 A JP17932380 A JP 17932380A JP H049388 B2 JPH049388 B2 JP H049388B2
- Authority
- JP
- Japan
- Prior art keywords
- insulating film
- source
- impurity region
- gate
- drain
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 10
- 230000015556 catabolic process Effects 0.000 claims description 3
- 239000012535 impurity Substances 0.000 claims 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 18
- 229910052814 silicon oxide Inorganic materials 0.000 description 18
- 238000009792 diffusion process Methods 0.000 description 13
- 238000004519 manufacturing process Methods 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 230000006378 damage Effects 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 101100521334 Mus musculus Prom1 gene Proteins 0.000 description 5
- 238000007664 blowing Methods 0.000 description 3
- 230000005669 field effect Effects 0.000 description 3
- 230000015654 memory Effects 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 229910052720 vanadium Inorganic materials 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17932380A JPS57103348A (en) | 1980-12-18 | 1980-12-18 | Semiconductor memory device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17932380A JPS57103348A (en) | 1980-12-18 | 1980-12-18 | Semiconductor memory device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57103348A JPS57103348A (en) | 1982-06-26 |
| JPH049388B2 true JPH049388B2 (ko) | 1992-02-20 |
Family
ID=16063820
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17932380A Granted JPS57103348A (en) | 1980-12-18 | 1980-12-18 | Semiconductor memory device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57103348A (ko) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR900006155B1 (ko) * | 1985-09-04 | 1990-08-24 | 후지쓰 가부시끼가이샤 | 프로그래머블 반도체 리드 온리 메모리 장치 |
| KR101927443B1 (ko) * | 2012-08-22 | 2018-12-10 | 에스케이하이닉스 주식회사 | 반도체 소자 및 그 제조 방법 |
| US10090360B2 (en) | 2015-02-13 | 2018-10-02 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of manufacturing a semiconductor structure including a plurality of trenches |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5691464A (en) * | 1979-12-25 | 1981-07-24 | Fujitsu Ltd | Semiconductor device |
| JPS5691466A (en) * | 1979-12-25 | 1981-07-24 | Fujitsu Ltd | Selective writing possible semiconductor element |
-
1980
- 1980-12-18 JP JP17932380A patent/JPS57103348A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5691464A (en) * | 1979-12-25 | 1981-07-24 | Fujitsu Ltd | Semiconductor device |
| JPS5691466A (en) * | 1979-12-25 | 1981-07-24 | Fujitsu Ltd | Selective writing possible semiconductor element |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57103348A (en) | 1982-06-26 |
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