JPH0481336B2 - - Google Patents
Info
- Publication number
- JPH0481336B2 JPH0481336B2 JP57105411A JP10541182A JPH0481336B2 JP H0481336 B2 JPH0481336 B2 JP H0481336B2 JP 57105411 A JP57105411 A JP 57105411A JP 10541182 A JP10541182 A JP 10541182A JP H0481336 B2 JPH0481336 B2 JP H0481336B2
- Authority
- JP
- Japan
- Prior art keywords
- emitter
- region
- polysilicon
- forming
- semiconductor substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
- H10D84/401—Combinations of FETs or IGBTs with BJTs
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57105411A JPS58222556A (ja) | 1982-06-21 | 1982-06-21 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57105411A JPS58222556A (ja) | 1982-06-21 | 1982-06-21 | 半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS58222556A JPS58222556A (ja) | 1983-12-24 |
JPH0481336B2 true JPH0481336B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1992-12-22 |
Family
ID=14406861
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP57105411A Granted JPS58222556A (ja) | 1982-06-21 | 1982-06-21 | 半導体装置の製造方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS58222556A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0712064B2 (ja) * | 1985-10-11 | 1995-02-08 | 松下電子工業株式会社 | 半導体集積回路の製造方法 |
DE3706278A1 (de) * | 1986-02-28 | 1987-09-03 | Canon Kk | Halbleitervorrichtung und herstellungsverfahren hierfuer |
JPH0734452B2 (ja) * | 1986-07-24 | 1995-04-12 | 三菱電機株式会社 | 半導体集積回路装置の製造方法 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5939901B2 (ja) * | 1978-12-28 | 1984-09-27 | 富士通株式会社 | 半導体装置の製造方法 |
JPS55157257A (en) * | 1979-05-25 | 1980-12-06 | Nec Corp | Manufacture of mos integrated circuit |
JPS567462A (en) * | 1979-06-29 | 1981-01-26 | Hitachi Ltd | Semiconductor device and its manufacture |
-
1982
- 1982-06-21 JP JP57105411A patent/JPS58222556A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS58222556A (ja) | 1983-12-24 |