JPH0481327B2 - - Google Patents
Info
- Publication number
- JPH0481327B2 JPH0481327B2 JP57163462A JP16346282A JPH0481327B2 JP H0481327 B2 JPH0481327 B2 JP H0481327B2 JP 57163462 A JP57163462 A JP 57163462A JP 16346282 A JP16346282 A JP 16346282A JP H0481327 B2 JPH0481327 B2 JP H0481327B2
- Authority
- JP
- Japan
- Prior art keywords
- gate electrode
- polycrystalline silicon
- mask
- impurity
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000012535 impurity Substances 0.000 claims description 28
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 24
- 238000000034 method Methods 0.000 claims description 18
- 239000004065 semiconductor Substances 0.000 claims description 17
- 239000000758 substrate Substances 0.000 claims description 10
- 238000004519 manufacturing process Methods 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 238000009792 diffusion process Methods 0.000 description 10
- 238000002513 implantation Methods 0.000 description 8
- 238000005468 ion implantation Methods 0.000 description 7
- 238000000137 annealing Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 230000004913 activation Effects 0.000 description 4
- 229910052785 arsenic Inorganic materials 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 239000005368 silicate glass Substances 0.000 description 2
- -1 arsenic ions Chemical class 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000010128 melt processing Methods 0.000 description 1
- 230000015654 memory Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16346282A JPS5952878A (ja) | 1982-09-20 | 1982-09-20 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16346282A JPS5952878A (ja) | 1982-09-20 | 1982-09-20 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5952878A JPS5952878A (ja) | 1984-03-27 |
| JPH0481327B2 true JPH0481327B2 (es) | 1992-12-22 |
Family
ID=15774333
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16346282A Granted JPS5952878A (ja) | 1982-09-20 | 1982-09-20 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5952878A (es) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60244074A (ja) * | 1984-05-18 | 1985-12-03 | Fujitsu Ltd | 半導体装置及びその製造方法 |
| JPS60245176A (ja) * | 1984-05-18 | 1985-12-04 | Matsushita Electric Ind Co Ltd | Ｍｉｓ型電界効果トランジスタの製造方法 |
| JPH0740604B2 (ja) * | 1985-07-30 | 1995-05-01 | ソニー株式会社 | Ｍｏｓ半導体装置の製造方法 |
| JPS6342161A (ja) * | 1986-08-07 | 1988-02-23 | Toshiba Corp | Ｃｍｏｓ型半導体装置の製造方法 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5283073A (en) * | 1975-12-29 | 1977-07-11 | Matsushita Electric Ind Co Ltd | Production of semiconductor device |
| JPS5444482A (en) * | 1977-09-14 | 1979-04-07 | Matsushita Electric Ind Co Ltd | Mos type semiconductor device and its manufacture |
| JPS57106169A (en) * | 1980-12-24 | 1982-07-01 | Fujitsu Ltd | Manufacture of semiconductor device |
-
1982
- 1982-09-20 JP JP16346282A patent/JPS5952878A/ja active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5283073A (en) * | 1975-12-29 | 1977-07-11 | Matsushita Electric Ind Co Ltd | Production of semiconductor device |
| JPS5444482A (en) * | 1977-09-14 | 1979-04-07 | Matsushita Electric Ind Co Ltd | Mos type semiconductor device and its manufacture |
| JPS57106169A (en) * | 1980-12-24 | 1982-07-01 | Fujitsu Ltd | Manufacture of semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5952878A (ja) | 1984-03-27 |
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