JPH0478182B2 - - Google Patents
Info
- Publication number
- JPH0478182B2 JPH0478182B2 JP21031886A JP21031886A JPH0478182B2 JP H0478182 B2 JPH0478182 B2 JP H0478182B2 JP 21031886 A JP21031886 A JP 21031886A JP 21031886 A JP21031886 A JP 21031886A JP H0478182 B2 JPH0478182 B2 JP H0478182B2
- Authority
- JP
- Japan
- Prior art keywords
- cathode
- semiconductor element
- conductor
- sliding
- thyristor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 38
- 239000004020 conductor Substances 0.000 claims description 25
- 229910052751 metal Inorganic materials 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 9
- 230000003746 surface roughness Effects 0.000 claims description 3
- 229910044991 metal oxide Inorganic materials 0.000 claims description 2
- 150000004706 metal oxides Chemical class 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 6
- 229910052750 molybdenum Inorganic materials 0.000 description 6
- 239000011733 molybdenum Substances 0.000 description 6
- 230000037431 insertion Effects 0.000 description 4
- 238000003780 insertion Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 239000010937 tungsten Substances 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 238000005219 brazing Methods 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000001568 sexual effect Effects 0.000 description 1
Landscapes
- Thyristors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP21031886A JPS6364345A (ja) | 1986-09-04 | 1986-09-04 | 半導体装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP21031886A JPS6364345A (ja) | 1986-09-04 | 1986-09-04 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6364345A JPS6364345A (ja) | 1988-03-22 |
JPH0478182B2 true JPH0478182B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1992-12-10 |
Family
ID=16587438
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP21031886A Granted JPS6364345A (ja) | 1986-09-04 | 1986-09-04 | 半導体装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6364345A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6781227B2 (en) * | 2002-01-25 | 2004-08-24 | International Rectifier Corporation | Compression assembled electronic package having a plastic molded insulation ring |
JP4947702B2 (ja) * | 2006-10-10 | 2012-06-06 | 日本インター株式会社 | 圧接型大電力用サイリスタモジュール |
-
1986
- 1986-09-04 JP JP21031886A patent/JPS6364345A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS6364345A (ja) | 1988-03-22 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US3657611A (en) | A semiconductor device having a body of semiconductor material joined to a support plate by a layer of malleable metal | |
JP2001036092A5 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | ||
GB820621A (en) | Improvements in or relating to semi-conductive devices | |
JPH04144157A (ja) | 半導体装置およびその製造方法 | |
JPH0478182B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | ||
US3273029A (en) | Method of attaching leads to a semiconductor body and the article formed thereby | |
GB2215125A (en) | Pressurized contact arrangement for semiconductor device | |
JPS6130754B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | ||
JPS6337660A (ja) | 加圧接続型gtoサイリスタ | |
US2968750A (en) | Transistor structure and method of making the same | |
JPH04208571A (ja) | 絶縁ゲート形fet | |
JPS5921033A (ja) | 全圧接型半導体装置 | |
JP3142318B2 (ja) | 半導体装置 | |
JPS59163865A (ja) | ゲ−トタ−ンオフサイリスタ | |
GB2149572A (en) | Semiconductor diode lasers | |
JPH0142832B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | ||
JPH0695537B2 (ja) | 半導体装置 | |
JPS5931034A (ja) | 半導体装置 | |
JPS5936833B2 (ja) | 半導体装置 | |
KR100267081B1 (ko) | 전력용반도체소자및그제조방법 | |
JPS5936822B2 (ja) | 圧接形半導体装置 | |
JPS58164231A (ja) | 半導体装置の製造方法 | |
JPS61158187A (ja) | 超伝導三端子素子及びその製造方法 | |
JPS6017961A (ja) | 半導体制御整流素子の製造方法 | |
JPS5890772A (ja) | 高耐圧半導体素子 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
EXPY | Cancellation because of completion of term |