JPH0478036B2 - - Google Patents

Info

Publication number
JPH0478036B2
JPH0478036B2 JP57190391A JP19039182A JPH0478036B2 JP H0478036 B2 JPH0478036 B2 JP H0478036B2 JP 57190391 A JP57190391 A JP 57190391A JP 19039182 A JP19039182 A JP 19039182A JP H0478036 B2 JPH0478036 B2 JP H0478036B2
Authority
JP
Japan
Prior art keywords
light emitting
semiconductor
emitting region
refractive index
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57190391A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5979591A (ja
Inventor
Katsuto Shima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP19039182A priority Critical patent/JPS5979591A/ja
Publication of JPS5979591A publication Critical patent/JPS5979591A/ja
Publication of JPH0478036B2 publication Critical patent/JPH0478036B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18305—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] with emission through the substrate, i.e. bottom emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP19039182A 1982-10-29 1982-10-29 半導体発光装置 Granted JPS5979591A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19039182A JPS5979591A (ja) 1982-10-29 1982-10-29 半導体発光装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19039182A JPS5979591A (ja) 1982-10-29 1982-10-29 半導体発光装置

Publications (2)

Publication Number Publication Date
JPS5979591A JPS5979591A (ja) 1984-05-08
JPH0478036B2 true JPH0478036B2 (ko) 1992-12-10

Family

ID=16257375

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19039182A Granted JPS5979591A (ja) 1982-10-29 1982-10-29 半導体発光装置

Country Status (1)

Country Link
JP (1) JPS5979591A (ko)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60223706A (ja) * 1984-04-20 1985-11-08 Central Conveyor Kk ブラシベルト駆動パレツトコンベヤ−のパレツト停止位置決め装置
JPH0513021Y2 (ko) * 1986-02-20 1993-04-06
JPH0521899Y2 (ko) * 1986-09-19 1993-06-04
US4881236A (en) * 1988-04-22 1989-11-14 University Of New Mexico Wavelength-resonant surface-emitting semiconductor laser
US5212703A (en) * 1992-02-18 1993-05-18 Eastman Kodak Company Surface emitting lasers with low resistance bragg reflectors

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5648192A (en) * 1979-09-13 1981-05-01 Xerox Corp Lateral light emitting electroluminescence unit
JPS56164588A (en) * 1980-05-23 1981-12-17 Nippon Telegr & Teleph Corp <Ntt> Semiconductor light amplifier

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5648192A (en) * 1979-09-13 1981-05-01 Xerox Corp Lateral light emitting electroluminescence unit
JPS56164588A (en) * 1980-05-23 1981-12-17 Nippon Telegr & Teleph Corp <Ntt> Semiconductor light amplifier

Also Published As

Publication number Publication date
JPS5979591A (ja) 1984-05-08

Similar Documents

Publication Publication Date Title
US4633476A (en) Semiconductor laser with internal reflectors and vertical output
US6472691B2 (en) Distributed feedback semiconductor laser device
US4803691A (en) Lateral superradiance suppressing diode laser bar
JPH07107949B2 (ja) フエイズドアレイ半導体レ−ザ−
EP0622876A1 (en) Vertical cavity laser diode
JPH07101768B2 (ja) 半導体レーザ装置及びその製造方法
US5084892A (en) Wide gain region laser diode
US4819243A (en) Semiconductor laser with active layer having a radiation emitting active region therein which extends through and is bounded by a current limiting blocking layer
US4636821A (en) Surface-emitting semiconductor elements
JPH06302908A (ja) 半導体レーザ
US5173913A (en) Semiconductor laser
JP4599700B2 (ja) 分布帰還型半導体レーザ
JPH0478036B2 (ko)
JPS61168981A (ja) 半導体レ−ザ装置
JP2758598B2 (ja) 半導体レーザ
JP2679974B2 (ja) 半導体レーザ装置
JP2927661B2 (ja) スーパールミネッセントダイオード素子およびその製造方法
Bhattacharya et al. High-power near-resonant 1.55 μm emitting InGaAsP/InP antiguided diode laser arrays
JPS614291A (ja) 面発光レ−ザ
JPH04234188A (ja) オプトエレクトロニック素子並びにレーザ及び光検出器製造へのその利用
US6587492B2 (en) Bipolar cascade arrow laser
EP0144205B1 (en) Semiconductor laser
JPH03104292A (ja) 半導体レーザ
JP3355016B2 (ja) 半導体発光装置およびその製造方法
JP3189900B2 (ja) 半導体レーザ素子