JPH0476512B2 - - Google Patents
Info
- Publication number
- JPH0476512B2 JPH0476512B2 JP60215913A JP21591385A JPH0476512B2 JP H0476512 B2 JPH0476512 B2 JP H0476512B2 JP 60215913 A JP60215913 A JP 60215913A JP 21591385 A JP21591385 A JP 21591385A JP H0476512 B2 JPH0476512 B2 JP H0476512B2
- Authority
- JP
- Japan
- Prior art keywords
- heat treatment
- photoelectric conversion
- conversion film
- cds
- producing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000010438 heat treatment Methods 0.000 claims description 31
- 238000006243 chemical reaction Methods 0.000 claims description 16
- 238000004519 manufacturing process Methods 0.000 claims description 13
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 11
- 229910052760 oxygen Inorganic materials 0.000 claims description 11
- 239000001301 oxygen Substances 0.000 claims description 11
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 7
- 239000011521 glass Substances 0.000 claims description 5
- 238000002844 melting Methods 0.000 claims description 3
- 229910004613 CdTe Inorganic materials 0.000 claims description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 claims description 2
- 239000011261 inert gas Substances 0.000 claims description 2
- 230000008018 melting Effects 0.000 claims 1
- 238000002360 preparation method Methods 0.000 claims 1
- 238000000034 method Methods 0.000 description 15
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 10
- 230000008569 process Effects 0.000 description 9
- 238000010586 diagram Methods 0.000 description 8
- 239000000843 powder Substances 0.000 description 7
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- 230000004044 response Effects 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 230000003746 surface roughness Effects 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000010304 firing Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 230000004913 activation Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- CJOBVZJTOIVNNF-UHFFFAOYSA-N cadmium sulfide Chemical compound [Cd]=S CJOBVZJTOIVNNF-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000009388 chemical precipitation Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 150000003346 selenoethers Chemical class 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Light Receiving Elements (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60215913A JPS6273679A (ja) | 1985-09-26 | 1985-09-26 | 光電変換膜の作製方法 |
DE19863632210 DE3632210A1 (de) | 1985-09-25 | 1986-09-23 | Verfahren zur herstellung eines photoelektrischen umwandlungsfilms |
US06/910,875 US4759951A (en) | 1985-09-25 | 1986-09-23 | Heat-treating Cd-containing photoelectric conversion film in the presence of a cadmium halide |
GB8622999A GB2183089B (en) | 1985-09-25 | 1986-09-24 | Process for producing photoelectric conversion film |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60215913A JPS6273679A (ja) | 1985-09-26 | 1985-09-26 | 光電変換膜の作製方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6273679A JPS6273679A (ja) | 1987-04-04 |
JPH0476512B2 true JPH0476512B2 (enrdf_load_stackoverflow) | 1992-12-03 |
Family
ID=16680323
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP60215913A Granted JPS6273679A (ja) | 1985-09-25 | 1985-09-26 | 光電変換膜の作製方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6273679A (enrdf_load_stackoverflow) |
-
1985
- 1985-09-26 JP JP60215913A patent/JPS6273679A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS6273679A (ja) | 1987-04-04 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4759951A (en) | Heat-treating Cd-containing photoelectric conversion film in the presence of a cadmium halide | |
EP0047651B1 (en) | Method of producing image sensor | |
JPH0476512B2 (enrdf_load_stackoverflow) | ||
US4614891A (en) | Photoconductive target of image pickup tube | |
US4406050A (en) | Method for fabricating lead halide sensitized infrared photodiodes | |
US4375644A (en) | Photoelectric element, picture-reading device including the same, and process for production thereof | |
JPH0482066B2 (enrdf_load_stackoverflow) | ||
JPS6047752B2 (ja) | 擦像管タ−ゲット | |
US4608514A (en) | Photoconductive target of the image pickup tube | |
KR900000534B1 (ko) | Cd₁_xZnxS 소결막의 제조방법 | |
US4605600A (en) | Transparent GaAs photoelectric layer | |
Pandey | A new method for the growth of Pb1− xSnxTe single crystals | |
JPH09232603A (ja) | 赤外線検出器の製造方法 | |
JPH058593B2 (enrdf_load_stackoverflow) | ||
JPS6235564A (ja) | 光電変換素子の作製方法 | |
JPS5816288B2 (ja) | コウドウデンタ−ゲツトノ セイゾウホウホウ | |
JPH0510833B2 (enrdf_load_stackoverflow) | ||
JPS62101089A (ja) | 青色発光素子 | |
JPS62186573A (ja) | 受光素子の製造方法 | |
JPS63137474A (ja) | 光電変換素子の製造方法 | |
JPS62119968A (ja) | 光電変換素子の製造方法 | |
JPS58172232A (ja) | 光導電性薄膜の製造方法 | |
JPS5829492B2 (ja) | 光画像変換素子の製造法 | |
JPS6012781A (ja) | 光導電素子の製造方法 | |
JPH0362966A (ja) | CdSSe系薄膜光センサ |