JPH0476511B2 - - Google Patents
Info
- Publication number
- JPH0476511B2 JPH0476511B2 JP60135425A JP13542585A JPH0476511B2 JP H0476511 B2 JPH0476511 B2 JP H0476511B2 JP 60135425 A JP60135425 A JP 60135425A JP 13542585 A JP13542585 A JP 13542585A JP H0476511 B2 JPH0476511 B2 JP H0476511B2
- Authority
- JP
- Japan
- Prior art keywords
- lower electrode
- image sensor
- light
- upper electrode
- photoelectric conversion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000006243 chemical reaction Methods 0.000 claims description 17
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 8
- 239000004065 semiconductor Substances 0.000 claims description 3
- 239000010408 film Substances 0.000 description 18
- 239000000758 substrate Substances 0.000 description 8
- 238000010586 diagram Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 238000000206 photolithography Methods 0.000 description 4
- 230000001681 protective effect Effects 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- YKYOUMDCQGMQQO-UHFFFAOYSA-L cadmium dichloride Chemical compound Cl[Cd]Cl YKYOUMDCQGMQQO-UHFFFAOYSA-L 0.000 description 2
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 239000011669 selenium Substances 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14623—Optical shielding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14665—Imagers using a photoconductor layer
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Facsimile Heads (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60135425A JPS61292961A (ja) | 1985-06-21 | 1985-06-21 | イメ−ジセンサ |
| US06/875,411 US4739178A (en) | 1985-06-21 | 1986-06-17 | Image sensor having over-sized window |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60135425A JPS61292961A (ja) | 1985-06-21 | 1985-06-21 | イメ−ジセンサ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61292961A JPS61292961A (ja) | 1986-12-23 |
| JPH0476511B2 true JPH0476511B2 (US20030220297A1-20031127-C00074.png) | 1992-12-03 |
Family
ID=15151429
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60135425A Granted JPS61292961A (ja) | 1985-06-21 | 1985-06-21 | イメ−ジセンサ |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US4739178A (US20030220297A1-20031127-C00074.png) |
| JP (1) | JPS61292961A (US20030220297A1-20031127-C00074.png) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4894700A (en) * | 1985-04-09 | 1990-01-16 | Fuji Xerox Co., Ltd. | Image sensor |
| US4855802A (en) * | 1986-10-20 | 1989-08-08 | Fuji Electric Co., Ltd. | Contact type image sensor |
| DE3903699A1 (de) * | 1988-02-08 | 1989-08-17 | Ricoh Kk | Bildsensor |
| GB9301405D0 (en) * | 1993-01-25 | 1993-03-17 | Philips Electronics Uk Ltd | An image sensor |
| TWI600125B (zh) * | 2015-05-01 | 2017-09-21 | 精材科技股份有限公司 | 晶片封裝體及其製造方法 |
| US11559216B1 (en) * | 2016-08-12 | 2023-01-24 | Apple Inc. | Integrated photodiode |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4141024A (en) * | 1975-09-25 | 1979-02-20 | Sony Corporation | Solid state image sensing device |
| US4354104A (en) * | 1980-05-06 | 1982-10-12 | Matsushita Electric Industrial Co., Ltd. | Solid-state image pickup device |
| US4607168A (en) * | 1982-07-09 | 1986-08-19 | Hitachi, Ltd. | Photosensor array devices |
-
1985
- 1985-06-21 JP JP60135425A patent/JPS61292961A/ja active Granted
-
1986
- 1986-06-17 US US06/875,411 patent/US4739178A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61292961A (ja) | 1986-12-23 |
| US4739178A (en) | 1988-04-19 |
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