JPH047587B2 - - Google Patents

Info

Publication number
JPH047587B2
JPH047587B2 JP22701384A JP22701384A JPH047587B2 JP H047587 B2 JPH047587 B2 JP H047587B2 JP 22701384 A JP22701384 A JP 22701384A JP 22701384 A JP22701384 A JP 22701384A JP H047587 B2 JPH047587 B2 JP H047587B2
Authority
JP
Japan
Prior art keywords
electron beam
beam exposure
substrate
layer
semi
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP22701384A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61104617A (ja
Inventor
Satoru Shida
Minoru Matsumoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP22701384A priority Critical patent/JPS61104617A/ja
Publication of JPS61104617A publication Critical patent/JPS61104617A/ja
Publication of JPH047587B2 publication Critical patent/JPH047587B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Electron Beam Exposure (AREA)
JP22701384A 1984-10-29 1984-10-29 電子ビ−ム露光方法 Granted JPS61104617A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22701384A JPS61104617A (ja) 1984-10-29 1984-10-29 電子ビ−ム露光方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22701384A JPS61104617A (ja) 1984-10-29 1984-10-29 電子ビ−ム露光方法

Publications (2)

Publication Number Publication Date
JPS61104617A JPS61104617A (ja) 1986-05-22
JPH047587B2 true JPH047587B2 (enrdf_load_stackoverflow) 1992-02-12

Family

ID=16854145

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22701384A Granted JPS61104617A (ja) 1984-10-29 1984-10-29 電子ビ−ム露光方法

Country Status (1)

Country Link
JP (1) JPS61104617A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11145046A (ja) * 1997-11-13 1999-05-28 Nec Corp 半導体デバイスの製造方法

Also Published As

Publication number Publication date
JPS61104617A (ja) 1986-05-22

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