JPH0475663B2 - - Google Patents
Info
- Publication number
- JPH0475663B2 JPH0475663B2 JP58022743A JP2274383A JPH0475663B2 JP H0475663 B2 JPH0475663 B2 JP H0475663B2 JP 58022743 A JP58022743 A JP 58022743A JP 2274383 A JP2274383 A JP 2274383A JP H0475663 B2 JPH0475663 B2 JP H0475663B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- polycrystalline silicon
- base
- transistor
- oxide film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 69
- 239000004065 semiconductor Substances 0.000 claims description 54
- 150000004767 nitrides Chemical class 0.000 claims description 28
- 238000002955 isolation Methods 0.000 claims description 24
- 238000004519 manufacturing process Methods 0.000 claims description 24
- 238000000605 extraction Methods 0.000 claims description 21
- 239000012535 impurity Substances 0.000 claims description 20
- 238000000034 method Methods 0.000 claims description 17
- 239000000758 substrate Substances 0.000 claims description 13
- 238000007254 oxidation reaction Methods 0.000 claims description 5
- 230000003647 oxidation Effects 0.000 claims description 4
- 230000001590 oxidative effect Effects 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 20
- 230000008901 benefit Effects 0.000 description 18
- 239000002184 metal Substances 0.000 description 15
- 238000010586 diagram Methods 0.000 description 14
- 229910052796 boron Inorganic materials 0.000 description 9
- -1 boron ions Chemical class 0.000 description 7
- 230000003321 amplification Effects 0.000 description 5
- 230000010354 integration Effects 0.000 description 5
- 238000003199 nucleic acid amplification method Methods 0.000 description 5
- 230000007547 defect Effects 0.000 description 4
- 241000293849 Cordylanthus Species 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/30—Devices controlled by electric currents or voltages
- H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H10D48/34—Bipolar devices
- H10D48/345—Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions
Landscapes
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58022743A JPS59149053A (ja) | 1983-02-16 | 1983-02-16 | 半導体装置およびその製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58022743A JPS59149053A (ja) | 1983-02-16 | 1983-02-16 | 半導体装置およびその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59149053A JPS59149053A (ja) | 1984-08-25 |
| JPH0475663B2 true JPH0475663B2 (enrdf_load_stackoverflow) | 1992-12-01 |
Family
ID=12091183
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58022743A Granted JPS59149053A (ja) | 1983-02-16 | 1983-02-16 | 半導体装置およびその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59149053A (enrdf_load_stackoverflow) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2925161B2 (ja) * | 1989-04-24 | 1999-07-28 | 新電元工業株式会社 | 絶縁ゲート型電界効果トランジスタ |
-
1983
- 1983-02-16 JP JP58022743A patent/JPS59149053A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59149053A (ja) | 1984-08-25 |