JPH0475656B2 - - Google Patents
Info
- Publication number
- JPH0475656B2 JPH0475656B2 JP57193410A JP19341082A JPH0475656B2 JP H0475656 B2 JPH0475656 B2 JP H0475656B2 JP 57193410 A JP57193410 A JP 57193410A JP 19341082 A JP19341082 A JP 19341082A JP H0475656 B2 JPH0475656 B2 JP H0475656B2
- Authority
- JP
- Japan
- Prior art keywords
- oxide film
- polycrystalline silicon
- base
- silicon layer
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 39
- 238000000034 method Methods 0.000 claims description 12
- 239000004065 semiconductor Substances 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 230000003647 oxidation Effects 0.000 claims description 8
- 238000007254 oxidation reaction Methods 0.000 claims description 8
- 238000000059 patterning Methods 0.000 claims description 6
- 239000002184 metal Substances 0.000 description 22
- 238000009792 diffusion process Methods 0.000 description 7
- 239000010953 base metal Substances 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 230000003321 amplification Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Bipolar Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57193410A JPS5984463A (ja) | 1982-11-05 | 1982-11-05 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57193410A JPS5984463A (ja) | 1982-11-05 | 1982-11-05 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5984463A JPS5984463A (ja) | 1984-05-16 |
| JPH0475656B2 true JPH0475656B2 (https=) | 1992-12-01 |
Family
ID=16307492
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57193410A Granted JPS5984463A (ja) | 1982-11-05 | 1982-11-05 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5984463A (https=) |
-
1982
- 1982-11-05 JP JP57193410A patent/JPS5984463A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5984463A (ja) | 1984-05-16 |
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