JPH0475649B2 - - Google Patents

Info

Publication number
JPH0475649B2
JPH0475649B2 JP58250046A JP25004683A JPH0475649B2 JP H0475649 B2 JPH0475649 B2 JP H0475649B2 JP 58250046 A JP58250046 A JP 58250046A JP 25004683 A JP25004683 A JP 25004683A JP H0475649 B2 JPH0475649 B2 JP H0475649B2
Authority
JP
Japan
Prior art keywords
film
silicon
crystal
growing
single crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58250046A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60140813A (ja
Inventor
Ryoichi Mukai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP25004683A priority Critical patent/JPS60140813A/ja
Publication of JPS60140813A publication Critical patent/JPS60140813A/ja
Publication of JPH0475649B2 publication Critical patent/JPH0475649B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02488—Insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02683—Continuous wave laser beam

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Recrystallisation Techniques (AREA)
JP25004683A 1983-12-28 1983-12-28 半導体装置の製造方法 Granted JPS60140813A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP25004683A JPS60140813A (ja) 1983-12-28 1983-12-28 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP25004683A JPS60140813A (ja) 1983-12-28 1983-12-28 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS60140813A JPS60140813A (ja) 1985-07-25
JPH0475649B2 true JPH0475649B2 (de) 1992-12-01

Family

ID=17202005

Family Applications (1)

Application Number Title Priority Date Filing Date
JP25004683A Granted JPS60140813A (ja) 1983-12-28 1983-12-28 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS60140813A (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63111610A (ja) * 1986-10-30 1988-05-16 Sharp Corp 半導体基板
US5173443A (en) * 1987-02-13 1992-12-22 Northrop Corporation Method of manufacture of optically transparent electrically conductive semiconductor windows
JP2813978B2 (ja) * 1987-05-25 1998-10-22 シャープ株式会社 半導体基板
JP2828980B2 (ja) * 1987-12-11 1998-11-25 株式会社日立製作所 半導体結晶の製造方法
US5250452A (en) * 1990-04-27 1993-10-05 North Carolina State University Deposition of germanium thin films on silicon dioxide employing interposed polysilicon layer
US5259918A (en) * 1991-06-12 1993-11-09 International Business Machines Corporation Heteroepitaxial growth of germanium on silicon by UHV/CVD
US5286334A (en) * 1991-10-21 1994-02-15 International Business Machines Corporation Nonselective germanium deposition by UHV/CVD
JP5583943B2 (ja) * 2008-10-02 2014-09-03 住友化学株式会社 半導体基板、電子デバイス、および半導体基板の製造方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
APPL.PHYS.LETT *

Also Published As

Publication number Publication date
JPS60140813A (ja) 1985-07-25

Similar Documents

Publication Publication Date Title
JPH0766922B2 (ja) 半導体装置の製造方法
JPS5893221A (ja) 半導体薄膜構造とその製造方法
JP2596547B2 (ja) 太陽電池及びその製造方法
JPS60210831A (ja) 化合物半導体結晶基板の製造方法
JPS6318668A (ja) 光電変換装置の製造方法
JP2660064B2 (ja) 結晶物品及びその形成方法
JPH0475649B2 (de)
JPS61188927A (ja) 化合物半導体装置
US5254211A (en) Method for forming crystals
CA1333248C (en) Method of forming crystals
JP2756320B2 (ja) 結晶の形成方法
JPH04206932A (ja) 半導体装置及びその製造方法
JPS60234312A (ja) Ｓｏｉ膜形成方法
JP2737152B2 (ja) Ｓｏｉ形成方法
EP0289114B1 (de) Verfahren zur Herstellung von Kristallen auf einem Lichtdurchlässigen Substrat
JPH0529214A (ja) 半導体基板の製造方法
JPH01187873A (ja) 半導体装置の製造方法
JPS58200525A (ja) 半導体装置用基板の製造方法
JPH05218364A (ja) 半導体基体の形成方法
JPS62174969A (ja) 半導体装置の製造方法
JPS6219046B2 (de)
JP2592832B2 (ja) 結晶の形成方法
JPS5893224A (ja) 半導体単結晶膜の製造方法
JPS5893225A (ja) 半導体薄膜構造の製造方法
JPS5893218A (ja) 半導体薄膜構造の製造方法