JPH0473087B2 - - Google Patents
Info
- Publication number
- JPH0473087B2 JPH0473087B2 JP58110400A JP11040083A JPH0473087B2 JP H0473087 B2 JPH0473087 B2 JP H0473087B2 JP 58110400 A JP58110400 A JP 58110400A JP 11040083 A JP11040083 A JP 11040083A JP H0473087 B2 JPH0473087 B2 JP H0473087B2
- Authority
- JP
- Japan
- Prior art keywords
- magnetoresistive element
- degrees
- magnetic field
- magnetoresistive
- angle
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000005291 magnetic effect Effects 0.000 claims description 28
- 238000001514 detection method Methods 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 11
- 239000010409 thin film Substances 0.000 claims description 5
- 230000005294 ferromagnetic effect Effects 0.000 claims description 4
- 238000010586 diagram Methods 0.000 description 7
- 229910017709 Ni Co Inorganic materials 0.000 description 2
- 229910003267 Ni-Co Inorganic materials 0.000 description 2
- 229910003262 Ni‐Co Inorganic materials 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000007493 shaping process Methods 0.000 description 2
- 229910000640 Fe alloy Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000003302 ferromagnetic material Substances 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
- G01D5/00—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable
- G01D5/12—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means
- G01D5/14—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means influencing the magnitude of a current or voltage
- G01D5/142—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means influencing the magnitude of a current or voltage using Hall-effect devices
- G01D5/147—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means influencing the magnitude of a current or voltage using Hall-effect devices influenced by the movement of a third element, the position of Hall device and the source of magnetic field being fixed in respect to each other
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Transmission And Conversion Of Sensor Element Output (AREA)
- Measuring Magnetic Variables (AREA)
Description
【発明の詳細な説明】
この発明は、例えば回転検出装置を効果的に構
成させることができる強磁性磁気抵抗体を用いた
磁気検出装置に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a magnetic detection device using a ferromagnetic magnetoresistive material that can effectively configure a rotation detection device, for example.
強磁性材料（例えばNi−Co）を用いて磁気抵
抗素子が構成される。すなわち、第１図に示すよ
うに絶縁性基板１１の一方の主面上に、強磁性薄
膜によつて、複数の平行状態にした長辺を複数の
短辺によつて順次直列状に接続する状態の抵抗パ
ターン１２を形成するもので、この抵抗体パター
ン１２の各端に電極１３を形成しブリツジを形成
する。そして、このブリツジの対向する２個の電
極１３間に定電圧、定電流の電源を接続し、抵抗
体パターン１２の抵抗値変化を測定して、この抵
抗体パターン１２に作用する磁界変化を検出する
ものである。 A magnetoresistive element is constructed using a ferromagnetic material (for example, Ni-Co). That is, as shown in FIG. 1, a plurality of parallel long sides are sequentially connected in series by a plurality of short sides using a ferromagnetic thin film on one main surface of an insulating substrate 11. This resistor pattern 12 is formed with electrodes 13 at each end of the resistor pattern 12 to form a bridge. Then, a constant voltage and constant current power source is connected between the two opposing electrodes 13 of this bridge, and changes in the resistance value of the resistor pattern 12 are measured, and changes in the magnetic field acting on this resistor pattern 12 are detected. It is something to do.
また、絶縁性基板１１の裏面に図示の如く磁化
されたバイアス磁石１４を固定して、この基板面
に平行にのびるバイアス磁界（飽和磁界）を磁気
抵抗素子である抵抗体パターン１２に加えるよう
にしている。 Further, a magnetized bias magnet 14 is fixed as shown on the back surface of the insulating substrate 11, and a bias magnetic field (saturation magnetic field) extending parallel to the substrate surface is applied to the resistor pattern 12, which is a magnetoresistive element. ing.
このような磁気抵抗素子を用いて磁気検出を行
なうには、第２図ＡにＨで示すように基板１１の
面にほぼ平行な面の磁場成分の方向変化を検出す
るものであり、抵抗体パターン１２の抵抗値変化
すなわち出力は、磁界方向の変化角度に対応して
第２図Ｂで示すようなサインカーブで得られる。
この場合、抵抗体パターン１２の長辺部と短辺部
との長さの比率に対応して、磁場成分方向が90度
の場合と180度の場合とでは抵抗値変化が大きく
相違するようになり、この抵抗値変化に対応する
出力信号を波形整形する際に出力波形に影響を与
え、磁場成分Ｈを回転させた時の出力波形のデユ
ーテイ比がばらつくような状態となる。 To perform magnetic detection using such a magnetoresistive element, the direction change of the magnetic field component in a plane substantially parallel to the surface of the substrate 11 is detected as shown by H in FIG. The change in resistance value of the pattern 12, that is, the output, is obtained as a sine curve as shown in FIG. 2B, corresponding to the angle of change in the direction of the magnetic field.
In this case, depending on the ratio of the lengths of the long side and the short side of the resistor pattern 12, the resistance value changes greatly when the magnetic field component direction is 90 degrees and when it is 180 degrees. This affects the output waveform when waveform shaping the output signal corresponding to this change in resistance value, resulting in a state in which the duty ratio of the output waveform varies when the magnetic field component H is rotated.
この発明は上記のような点に鑑みなされたもの
で、ノイズ磁界に強く、磁界成分を回転させた場
合に、常に安定したデユーテイ比の出力信号波形
が得られ、例えば回転検出装置等として効果的に
用いることができるようにする磁気検出装置を提
供しようとするものである。 This invention was made in view of the above points, and is resistant to noise magnetic fields, and when the magnetic field component is rotated, an output signal waveform with a stable duty ratio is always obtained, making it effective as, for example, a rotation detection device. The present invention aims to provide a magnetic detection device that can be used for.
特に、本発明では、絶縁性基板上に強磁性薄膜
からなる細線状の第１、第２の磁気抵抗素子を形
成し、両磁気抵抗素子の長手方向のなす角度を特
定角度、90〜180度または270〜360度の範囲、望
ましくは100〜150度または280〜330度に設定し
て、良好な出力波形を得るようにしたものであ
る。 In particular, in the present invention, thin wire-shaped first and second magnetoresistive elements made of a ferromagnetic thin film are formed on an insulating substrate, and the angle formed by the longitudinal direction of both magnetoresistive elements is set to a specific angle of 90 to 180 degrees. Alternatively, it is set in the range of 270 to 360 degrees, preferably 100 to 150 degrees or 280 to 330 degrees to obtain a good output waveform.
以下、図面に示す実施例により本発明を説明す
る。本実施例では回転検出装置を構成するように
している。第３図は本装置を模式的に示した平面
図である。 The present invention will be explained below with reference to embodiments shown in the drawings. In this embodiment, a rotation detection device is configured. FIG. 3 is a plan view schematically showing the present device.
第３図において回転体１を磁性体から成る歯車
で構成し、この歯車に対向して回転検出器２を所
定の位置関係に固定してある。また回転検出器２
は以下の様な構成になつている。例えばシリコン
酸化膜の基板から成る絶縁性基板３上にNi−Co
合金薄膜を蒸着し、細線状の磁気抵抗素子４，５
をエツチングして形成し、ブリツジを組む。この
際、第１の磁気抵抗素子４の長手方向と第２の磁
気抵抗素子５の長手方向のなす角度を120°で作成
する。また、絶縁性基板３の側面には永久磁石６
が固定されており、第１の磁気抵抗素子４の面に
対し、水平方向で、かつその長手方向に直角の方
向にバイアス磁界が印加されるように構成されて
いる。 In FIG. 3, a rotating body 1 is constituted by a gear made of a magnetic material, and a rotation detector 2 is fixed in a predetermined positional relationship opposite to this gear. Also, rotation detector 2
has the following structure. For example, on an insulating substrate 3 consisting of a silicon oxide film substrate, Ni-Co
A thin wire-shaped magnetoresistive element 4, 5 is formed by depositing an alloy thin film.
Form by etching and assemble the bridge. At this time, the angle formed by the longitudinal direction of the first magnetoresistive element 4 and the longitudinal direction of the second magnetoresistive element 5 is 120°. In addition, a permanent magnet 6 is attached to the side surface of the insulating substrate 3.
is fixed, and a bias magnetic field is applied to the surface of the first magnetoresistive element 4 in a horizontal direction and in a direction perpendicular to its longitudinal direction.
なお、バイアス磁界の方向は第１の磁気抵抗素
子４の長手方向であつてもよく、また第１の磁気
抵抗素子４に代えて第２の磁気抵抗素子５に対し
上記したようなバイアス磁界を印加するようにし
てもよい。 Note that the direction of the bias magnetic field may be the longitudinal direction of the first magnetoresistive element 4, or the bias magnetic field as described above may be applied to the second magnetoresistive element 5 instead of the first magnetoresistive element 4. Alternatively, the voltage may be applied.
上記構成によると、回転体（歯車１）の回転に
より、第４図に示すような出力電圧が得られる。
この場合、磁石６は一定のもので、磁界強度は一
定であり、出力は安定して得られるので、波形整
形してもデユーテイ比は非常に安定している。ま
た、このものは回転体１として多極回転磁石のか
わりに歯車を使用するため、コストも安価で、精
度よい回転パルスを得ることができる。 According to the above configuration, the output voltage as shown in FIG. 4 is obtained by the rotation of the rotating body (gear 1).
In this case, the magnet 6 is constant, the magnetic field strength is constant, and the output can be stably obtained, so even if the waveform is shaped, the duty ratio is very stable. Furthermore, since this device uses a gear instead of a multipolar rotating magnet as the rotating body 1, the cost is low and rotational pulses with high precision can be obtained.
次に、第１の磁気抵抗素子４の長手方向と第２
の磁気抵抗素子５の長手方向のなす角度（θ）の
設定について第５図を用いて説明する。なお、第
５図は第１の磁気抵抗素子４と第２の磁気抵抗素
子５の長手方向のなす角度（θ）と出力電圧
（mV）の関係を示したものである。角度（θ）
がほぼ90度〜180度、またはほぼ270度〜360度の
範囲にある場合、他の角度範囲にある場合より出
力が大きくなり、好しくは角度（θ）がほぼ100
度〜150度、またはほぼ280度〜330度の範囲にあ
るとき出力電圧は急激に増大し、良好な感度を示
すことが分かる。 Next, the longitudinal direction of the first magnetoresistive element 4 and the second
The setting of the angle (θ) formed by the longitudinal direction of the magnetoresistive element 5 will be explained using FIG. Note that FIG. 5 shows the relationship between the angle (θ) formed by the longitudinal direction of the first magnetoresistive element 4 and the second magnetoresistive element 5 and the output voltage (mV). Angle (θ)
If the angle (θ) is in the range of approximately 90 degrees to 180 degrees, or approximately 270 degrees to 360 degrees, the output will be greater than in other angle ranges, preferably when the angle (θ) is approximately 100 degrees.
It can be seen that the output voltage increases rapidly when the temperature ranges from 150 degrees to 150 degrees, or approximately 280 degrees to 330 degrees, indicating good sensitivity.
次に、他の実施例を第６図により説明する。回
転検出器２は以下の構成からなつている。ガラス
基板３Ａ上にNi−Fe合金薄膜を蒸着し、細線状
の磁気抵抗素子４Ａ，４Ｂ，５Ａ，５Ｂをエツチ
ングして形成する。各抵抗素子４Ａ，４Ｂ，５
Ａ，５Ｂの端子部に電極７，８を形成し、フルブ
リツジ構造とする。この際、第１、第３の磁気抵
抗素子４Ａ，５Ａ、第２、第４の磁気抵抗素子４
Ｂ，５Ｂのそれぞれの長手方向の交差する角度を
330°とする。また第１、第２の磁気抵抗素子４
Ａ，４Ｂの面に対し、水平方向で、かつその長手
方向に直角の方向に永久磁石６Ａによりバイアス
磁界を印加するように構成されている。 Next, another embodiment will be explained with reference to FIG. The rotation detector 2 has the following configuration. A Ni--Fe alloy thin film is deposited on a glass substrate 3A, and thin wire magnetoresistive elements 4A, 4B, 5A, and 5B are formed by etching. Each resistance element 4A, 4B, 5
Electrodes 7 and 8 are formed at the terminal portions of A and 5B to form a full bridge structure. At this time, the first and third magnetoresistive elements 4A, 5A, the second and fourth magnetoresistive elements 4
The angle at which the longitudinal directions of B and 5B intersect is
Set to 330°. In addition, the first and second magnetoresistive elements 4
The permanent magnet 6A is configured to apply a bias magnetic field horizontally to the surfaces A and 4B and in a direction perpendicular to the longitudinal direction thereof.
そこで回転体（歯車１）の回転により、第７図
に示すような出力電圧が得られる。この場合も磁
石６Ａは一定磁界のものであるため、出力は安定
して得られる。 Therefore, by rotating the rotating body (gear 1), an output voltage as shown in FIG. 7 is obtained. In this case as well, since the magnet 6A has a constant magnetic field, the output can be stably obtained.
以上の如く本発明によれば、ノイズ磁界に対し
て強くなり、検出信号を波形整形等を行つて出力
する場合でも、磁界の回転に対応してデユーテイ
比を確実にした信号が取出されるようにできると
共に、安定して磁気検出信号がより高出力で得ら
れるようになるものであり、本装置を用いれば回
転検出器等を効果的に構成し得るようになる。 As described above, according to the present invention, even when outputting a detection signal after waveform shaping, etc., which is strong against a noise magnetic field, a signal with a reliable duty ratio corresponding to the rotation of the magnetic field can be extracted. In addition, it is possible to stably obtain a magnetic detection signal with a higher output, and by using this device, it becomes possible to effectively configure a rotation detector and the like.
第１図は従来の磁気検出装置を説明する図、第
２図は上記装置の出力波形を示す図、第３図は本
発明の一実施例に係る磁気検出装置を説明する
図、第４図は上記実施例の出力波形を示す図、第
５図は第１、第２の磁気抵抗素子の長手方向の交
差角度と出力電圧との関係を示す図、第６図及び
第７図は本発明の他の実施例を示す図及びその出
力波形図である。
１……回転体、２……回転検出器、４……絶縁
性基板、４，５……第１、第２の磁気抵抗素子、
６……永久磁石。
FIG. 1 is a diagram explaining a conventional magnetic detection device, FIG. 2 is a diagram showing the output waveform of the above device, FIG. 3 is a diagram explaining a magnetic detection device according to an embodiment of the present invention, and FIG. is a diagram showing the output waveform of the above embodiment, FIG. 5 is a diagram showing the relationship between the intersection angle in the longitudinal direction of the first and second magnetoresistive elements and the output voltage, and FIGS. FIG. 2 is a diagram showing another embodiment of the invention and its output waveform diagram. DESCRIPTION OF SYMBOLS 1... Rotating body, 2... Rotation detector, 4... Insulating substrate, 4, 5... First and second magnetoresistive elements,
6...Permanent magnet.
Claims (1)
抗パターンを形成しブリツジを構成した第１、第
２の磁気抵抗素子と、前記第１の磁気抵抗素子ま
たは前記第２の磁気抵抗素子に対し、水平方向で
かつその長手方向または直角方向にバイアス磁界
を加える磁石と、磁性体の歯を有する回転体より
なりその回転により前記磁気抵抗素子に対し磁界
を作用させる手段とを備え、かつ前記第１、第２
の磁気抵抗素子の長手方向のなす角度が90〜180
度または270〜360度である所定角度範囲に設定さ
れている磁気検出装置。 ２ 前記第１、第２の磁気抵抗素子の長手方向の
なす角度が100〜150度または280〜330度の範囲に
設定されている特許請求の範囲第１項記載の磁気
検出装置。[Scope of Claims] 1. First and second magnetoresistive elements forming a bridge by forming a thin line-shaped resistance pattern of a ferromagnetic thin film on an insulating substrate, and the first magnetoresistive element or the second magnetoresistive element. a magnet that applies a bias magnetic field horizontally and in the longitudinal direction or perpendicular direction to the magnetoresistive element, and a means for applying a magnetic field to the magnetoresistive element by rotation of the rotating body having magnetic teeth and the first and second
The angle formed by the longitudinal direction of the magnetoresistive element is 90 to 180
Magnetic detection device that is set to a predetermined angle range that is 270 to 360 degrees. 2. The magnetic detection device according to claim 1, wherein the angle between the longitudinal directions of the first and second magnetoresistive elements is set in a range of 100 to 150 degrees or 280 to 330 degrees.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58110400A JPS601515A (en) | 1983-06-20 | 1983-06-20 | Magnetism detecting device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58110400A JPS601515A (en) | 1983-06-20 | 1983-06-20 | Magnetism detecting device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS601515A JPS601515A (en) | 1985-01-07 |
| JPH0473087B2 true JPH0473087B2 (en) | 1992-11-19 |
Family
ID=14534840
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58110400A Granted JPS601515A (en) | 1983-06-20 | 1983-06-20 | Magnetism detecting device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS601515A (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH081387B2 (en) * | 1985-12-23 | 1996-01-10 | 松下電器産業株式会社 | Magnetic sensor |
| JP4298691B2 (en) | 2005-09-30 | 2009-07-22 | Ｔｄｋ株式会社 | Current sensor and manufacturing method thereof |
| JP2012063203A (en) * | 2010-09-15 | 2012-03-29 | Hamamatsu Koden Kk | Magnetic sensor |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5774612A (en) * | 1980-10-28 | 1982-05-10 | Nec Home Electronics Ltd | Linear displacement detection |
-
1983
- 1983-06-20 JP JP58110400A patent/JPS601515A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5774612A (en) * | 1980-10-28 | 1982-05-10 | Nec Home Electronics Ltd | Linear displacement detection |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS601515A (en) | 1985-01-07 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPH06148301A (en) | Magnetic sensor | |
| JPH0720218A (en) | Magnetic sensor | |
| JPH0473087B2 (en) | ||
| JPH0870148A (en) | Magnetoresistance element | |
| JPS59142417A (en) | Magnetism detecting device | |
| JPH0778528B2 (en) | Magnetic sensor | |
| JP2576763B2 (en) | Ferromagnetic magnetoresistive element | |
| JPS63202979A (en) | Magnetic sensor for encoder | |
| JP2503481B2 (en) | Rotation detector | |
| JPH069306Y2 (en) | Position detector | |
| JPH11311543A (en) | Magnetoresistive element and magnetic detector | |
| JP3186258B2 (en) | Non-contact potentiometer | |
| JPH08316548A (en) | Magnetoresistive element | |
| JPH01110215A (en) | Angle of rotation sensor | |
| JPH0329875A (en) | Magnetoresistance element made of ferromagnetic body | |
| JPS625284B2 (en) | ||
| JP3047567B2 (en) | Orientation sensor | |
| KR940008887B1 (en) | Magnetic resistance element | |
| JP2576136B2 (en) | Magnetic direction measurement device | |
| JPH06174752A (en) | Current sensor | |
| JPS5979807A (en) | Magnetic detector | |
| JPS6329837B2 (en) | ||
| JPS6280572A (en) | Magnetic detector | |
| JPH0561562B2 (en) | ||
| JPH06177454A (en) | Ferromagnetic thin film magnetoresistance element and magnetic sensor using it |