JPH0720218A - Magnetic sensor - Google Patents
Magnetic sensorInfo
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- JPH0720218A JPH0720218A JP5143872A JP14387293A JPH0720218A JP H0720218 A JPH0720218 A JP H0720218A JP 5143872 A JP5143872 A JP 5143872A JP 14387293 A JP14387293 A JP 14387293A JP H0720218 A JPH0720218 A JP H0720218A
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- Prior art keywords
- magnetic field
- magnetic
- magnetoresistive element
- respect
- detection
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Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は磁気センサに係り、特に
所定の方向から印加される磁界の強さを検出する磁気セ
ンサに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a magnetic sensor, and more particularly to a magnetic sensor for detecting the strength of a magnetic field applied from a predetermined direction.
【０００２】磁気センサはＦＡ（ファクトリ・オートメ
ーション）、工作機械等の種々の分野で利用されてい
る。特に強磁性薄膜を用いた磁気抵抗素子は高感度に磁
気測定が行なえるため、各種磁気測定への応用が期待さ
れている。Magnetic sensors are used in various fields such as FA (factory automation) and machine tools. In particular, since a magnetoresistive element using a ferromagnetic thin film can perform magnetic measurement with high sensitivity, it is expected to be applied to various magnetic measurements.
【０００３】しかし、強磁性薄膜を用いた磁気抵抗素子
は高感度ではあるが飽和磁界強度が低く、広範囲の磁界
強度での使用が行なえないため、各種分野での使用に耐
えるためには飽和磁界を大きくする必要がある。However, a magnetoresistive element using a ferromagnetic thin film has a high sensitivity but a low saturation magnetic field strength and cannot be used in a wide range of magnetic field strength. Needs to be increased.
【０００４】[0004]
【従来の技術】図１２に従来の一例の構成図を示す。図
は磁気抵抗素子（ＭＲ素子）５１を用いた磁気センサ
で、電流測定を行なう装置が構成されている。2. Description of the Related Art FIG. 12 shows a block diagram of a conventional example. The figure shows a magnetic sensor using a magnetoresistive element (MR element) 51, which constitutes a device for measuring current.
【０００５】測定穴部５２にはケーブル５３が貫通し、
ケーブル５３を流れる電流によりその周囲に配設された
磁性体５４に磁束５５が貫通する。磁束５５は磁性体５
４によりそのギャップ部５６まで導びかれる。A cable 53 passes through the measurement hole 52,
The magnetic flux 55 penetrates through the magnetic body 54 disposed around the cable 53 due to the current flowing through the cable 53. The magnetic flux 55 is the magnetic body 5
4 leads to the gap 56.
【０００６】ギャップ部５６にはＭＲ素子５１が配設さ
れていてＭＲ素子５１に磁界が印加される。ＭＲ素子５
１はガラス基板上にＮｉ−Ｃｏ等の磁気抵抗効果を有す
る強磁性体よりなる薄膜を形成してなり、印加磁界の強
度に応じて薄膜の抵抗が変化する素子で、ギャップ部５
６に生じる磁界に応じた信号を出力する。An MR element 51 is arranged in the gap portion 56 and a magnetic field is applied to the MR element 51. MR element 5
Reference numeral 1 denotes an element in which a thin film made of a ferromagnetic material having a magnetoresistive effect such as Ni-Co is formed on a glass substrate, and the resistance of the thin film changes according to the strength of an applied magnetic field.
A signal corresponding to the magnetic field generated in 6 is output.
【０００７】従来のこの種の磁気センサではＭＲ素子５
１はギャップ部５６に生じる磁界に対して最も高感度が
得られるように固定されていた。In this type of conventional magnetic sensor, the MR element 5 is used.
No. 1 was fixed so that the highest sensitivity to the magnetic field generated in the gap portion 56 was obtained.
【０００８】[0008]
【発明が解決しようとする課題】しかるに、従来の磁気
センサは磁界の印加方向に対して最も高感度となるよう
に素子が固定されており、一定の磁界強度範囲でのみ用
いられる構成とされており、他の磁界強度範囲の磁界強
度を測定する場合には強磁性薄膜のパターンや結晶の方
向を変えることにより対応しなければならず、広範囲の
磁界強度に対して対応できない等の問題点があった。However, in the conventional magnetic sensor, the element is fixed so as to have the highest sensitivity in the direction of application of the magnetic field, and is configured to be used only within a certain magnetic field strength range. However, when measuring the magnetic field strength in another magnetic field strength range, it is necessary to deal with it by changing the pattern of the ferromagnetic thin film or the direction of the crystal, and there is a problem that it cannot cope with a wide range of magnetic field strength. there were.
【０００９】本発明は上記の点に鑑みてなされたもの
で、簡単に広範囲の磁界強度に高感度に対応できる磁気
センサを提供することを目的とする。The present invention has been made in view of the above points, and an object of the present invention is to provide a magnetic sensor which can easily cope with a wide range of magnetic field strength with high sensitivity.
【００１０】[0010]
【課題を解決するための手段】本発明は一定の方向から
印加される磁界に対して一定の検出感度を有する検出素
子に所定の方向から磁界を印加し、磁界の強さを検出す
る磁気センサにおいて、磁界が印加される前記所定の方
向に対して素子の相対的角度を可変にすることにより磁
界の強さの検出感度の調整を得る構成としてなる。SUMMARY OF THE INVENTION The present invention is a magnetic sensor for detecting the strength of a magnetic field by applying a magnetic field from a predetermined direction to a detection element having a constant detection sensitivity with respect to a magnetic field applied from a constant direction. In the above, the configuration is such that the detection sensitivity of the magnetic field strength is adjusted by making the relative angle of the element variable with respect to the predetermined direction in which the magnetic field is applied.
【００１１】[0011]
【作用】本発明によれば、磁界が印加される所定の方向
に対して素子の角度を可変することにより磁界の強さの
検出感度を調整するため、同一の素子を用いて異なる感
度のセンサを構成でき、広範囲の磁界に対して対応でき
る。According to the present invention, since the detection sensitivity of the strength of the magnetic field is adjusted by changing the angle of the element with respect to the predetermined direction in which the magnetic field is applied, the same element is used for the sensor of different sensitivity. Can be configured, and can cope with a wide range of magnetic fields.
【００１２】[0012]
【実施例】図１に本発明の第１実施例の斜視図を示す。1 shows a perspective view of a first embodiment of the present invention.
【００１３】本実施例はケーブル５に流れる電流を測定
する電流測定装置を示す。同図中、１は磁気センサ部を
示す。磁気センサ部１はコア２のギャップ３内に配置さ
れる。This embodiment shows a current measuring device for measuring the current flowing through the cable 5. In the figure, 1 indicates a magnetic sensor unit. The magnetic sensor unit 1 is arranged in the gap 3 of the core 2.
【００１４】コア２はＮｉ−Ｆｅ等の磁性材を円環状に
形成し、その一部がギャップ３を形成すべく切欠かれて
いる。ギャップ３はコア２の端面が平行となるように形
成されており、均一な磁界が形成される構成とされてい
る。The core 2 is formed of a magnetic material such as Ni-Fe in an annular shape, and a part of the core 2 is cut out to form the gap 3. The gap 3 is formed so that the end faces of the core 2 are parallel to each other, and a uniform magnetic field is formed.
【００１５】磁気センサ部１及びコア２は樹脂製のケー
ス４に収納される。ケース４はコア２の形状に略そっ
て、磁気センサ部１及びコア２を包囲する。The magnetic sensor unit 1 and the core 2 are housed in a resin case 4. The case 4 substantially follows the shape of the core 2 and surrounds the magnetic sensor unit 1 and the core 2.
【００１６】ケーブル５は測定時にはコア２の測定穴６
を貫通して配設される。ケーブル５に電流が流れると電
流により、ケーブル５の周囲に磁界が発生する。このと
き、発生する磁界は電流に比例する。この磁界による磁
束がケーブル５に鎖交するコア２に閉じ込められる。コ
ア２の磁束をギャップ３で磁気センサ部により検出する
ことによりケーブル５に流れる電流を測定する。The cable 5 has a measuring hole 6 in the core 2 for measurement.
Is arranged so as to penetrate through. When an electric current flows through the cable 5, a magnetic field is generated around the cable 5 due to the electric current. At this time, the generated magnetic field is proportional to the current. The magnetic flux generated by this magnetic field is confined in the core 2 which is linked to the cable 5. The current flowing through the cable 5 is measured by detecting the magnetic flux of the core 2 in the gap 3 by the magnetic sensor unit.
【００１７】図２に磁気センサ部１の構成図を示す。磁
気センサ部１は磁気抵抗素子７及びバイアス磁石８より
構成され、磁気抵抗素子７はギャップ３の磁界の印加方
向（矢印Ａ方向）に対して所定の角度θをもってギャッ
プ３内に配設されている。バイアス磁石８はギャップ３
の両側面に配設され、ギャップ３内にギャップ３により
生じる磁界の印加方向（矢印Ａ方向）に対して直交する
方向に一定磁界を発生しており、磁気抵抗素子７にバイ
アス磁界を印加する。FIG. 2 shows a configuration diagram of the magnetic sensor unit 1. The magnetic sensor unit 1 is composed of a magnetic resistance element 7 and a bias magnet 8. The magnetic resistance element 7 is arranged in the gap 3 at a predetermined angle θ with respect to the magnetic field application direction of the gap 3 (direction of arrow A). There is. Bias magnet 8 has gap 3
Are disposed on both side surfaces of the magnetoresistive element 7 and generate a constant magnetic field in the gap 3 in a direction orthogonal to the application direction of the magnetic field generated by the gap 3 (direction of arrow A), and apply a bias magnetic field to the magnetoresistive element 7. .
【００１８】図３に磁気抵抗素子７の構成図を示す。磁
気抵抗素子７は印加磁界に応じて抵抗値が変化する素子
で、ガラス等の絶縁体よりなる基板９上にＮｉ−Ｆｅ，
Ｎｉ−Ｃｏ等の磁気抵抗効果を有する強磁性体よりなる
薄膜パターン１０，１１，１２，１３を形成してなる。
薄膜パターン１０〜１３は基板９に平行な矢印Ｘ方向に
感度を有するように結晶の磁気異方性が設定され、形成
されており、基板９に平行な方向の印加磁界の強度の測
定が可能な構成とされている。FIG. 3 shows a block diagram of the magnetoresistive element 7. The magnetoresistive element 7 is an element whose resistance value changes in response to an applied magnetic field, and is formed on a substrate 9 made of an insulating material such as glass by Ni-Fe,
The thin film patterns 10, 11, 12, and 13 made of a ferromagnetic material having a magnetoresistive effect such as Ni-Co are formed.
The thin film patterns 10 to 13 are formed such that the crystal magnetic anisotropy is set so as to have sensitivity in the arrow X direction parallel to the substrate 9, and the strength of the applied magnetic field in the direction parallel to the substrate 9 can be measured. It has been configured.
【００１９】薄膜パターン１０〜１３間には端子１４〜
１７が接続されていて、薄膜パターン１０〜１３及び端
子１４〜１７によりブリッジ回路が構成されている。端
子１４，１６間には一定電圧が印加され、薄膜パターン
１０〜１３にはバイアス磁石８によりバイアス磁界が印
加される。Between the thin film patterns 10 to 13, terminals 14 to
17 is connected, and the thin film patterns 10 to 13 and the terminals 14 to 17 form a bridge circuit. A constant voltage is applied between the terminals 14 and 16, and a bias magnetic field is applied to the thin film patterns 10 to 13 by the bias magnet 8.
【００２０】バイアス磁界は基板９に平行で、かつ、検
出磁界の印加方向（矢印Ｘ方向）に対して直角な方向
（矢印Ｙ方向）に印加される。バイアス磁界により薄膜
パターン１０〜１３に一定の磁界が基板９に平行で、か
つ、薄膜パターン１０〜１３の長手方向に対して一定の
角度（４５°）に印加されるため、薄膜パターン１０〜
１３は略同一の抵抗となる。このため、端子１５，１７
間の電圧は“０”となる。The bias magnetic field is applied parallel to the substrate 9 and in a direction (arrow Y direction) perpendicular to the direction of application of the detection magnetic field (arrow X direction). A constant magnetic field is applied to the thin film patterns 10 to 13 by the bias magnetic field in parallel to the substrate 9 and at a constant angle (45 °) with respect to the longitudinal direction of the thin film patterns 10 to 13.
13 has substantially the same resistance. Therefore, the terminals 15 and 17
The voltage between them becomes "0".
【００２１】磁気抵抗素子７にバイアス磁界を印加した
状態で、矢印Ｘ1 方向に検出磁界が印加されると、その
合成磁界は図３（Ｃ）に破線で示すように変化する。こ
のとき、薄膜パターン１０，１２は合成磁界の印加方向
に対してその長手方向が直交し、薄膜パターン１１，１
３は合成磁界の印加方向に対してその長手方向が平行と
なる。このため、薄膜パターン１０，１２の抵抗が大き
くなり、薄膜パターン１１，１３の抵抗が小さくなり、
ブリッジ回路の抵抗のバランスがくずれ、端子１５，１
７間に電圧が生じる。端子１５，１７間に生じる電圧は
検出磁界の強度により変化する。When a detection magnetic field is applied in the direction of arrow X 1 while a bias magnetic field is applied to the magnetoresistive element 7, the combined magnetic field changes as shown by the broken line in FIG. 3 (C). At this time, the longitudinal directions of the thin film patterns 10 and 12 are orthogonal to the application direction of the synthetic magnetic field, and the thin film patterns 11 and 1 are
3 has its longitudinal direction parallel to the application direction of the synthetic magnetic field. Therefore, the resistances of the thin film patterns 10 and 12 increase, and the resistances of the thin film patterns 11 and 13 decrease.
The balance of the resistance of the bridge circuit is lost, and terminals 15 and 1
A voltage develops between 7. The voltage generated between the terminals 15 and 17 changes depending on the strength of the detected magnetic field.
【００２２】検出磁界が矢印Ｘ2 方向に印加されると、
検出磁界とバイアス磁界との合成磁界は図３（Ｃ）に一
点鎖線で示すように変化する。このとき、薄膜パターン
１０，１２は合成磁界に対して、長手方向が平行とな
り、薄膜パターン１１，１３は合成磁界に対して長手方
向が直角となる。このため、薄膜パターン１０，１２の
抵抗は小さく薄膜パターン１１，１３の抵抗は大きくな
り、ブリッジ回路の抵抗のバランスがくずれ、端子１
５，１７間には検出磁界が矢印Ｘ1 方向に印加されたと
きとは逆の極性の電圧が生じる。端子１５，１７間に生
じる電圧は検出磁界の強度により変化する。When the detection magnetic field is applied in the direction of arrow X 2 ,
The combined magnetic field of the detection magnetic field and the bias magnetic field changes as shown by the alternate long and short dash line in FIG. At this time, the thin film patterns 10 and 12 have their longitudinal directions parallel to the synthetic magnetic field, and the thin film patterns 11 and 13 have their longitudinal directions perpendicular to the synthetic magnetic field. Therefore, the resistances of the thin film patterns 10 and 12 are small, and the resistances of the thin film patterns 11 and 13 are large.
A voltage having a polarity opposite to that when the detection magnetic field is applied in the direction of the arrow X 1 is generated between 5 and 17. The voltage generated between the terminals 15 and 17 changes depending on the strength of the detected magnetic field.
【００２３】このように磁気抵抗素子７によれば、端子
１５，１７間の電圧を測定することにより検出磁界の強
度を測定する構成とされている。以上、磁気抵抗素子７
について説明した。As described above, according to the magnetoresistive element 7, the strength of the detected magnetic field is measured by measuring the voltage between the terminals 15 and 17. Above, the magnetoresistive element 7
I explained.
【００２４】図４に磁気抵抗素子７の変形例の構成図を
示す。本変形例はガラス等よりなる絶縁基板１８上に導
電薄膜２３と強磁性体薄膜２４とを平面的に交互に形成
してなるパターン１９〜２２が形成されてなる。この導
電薄膜２３と磁気抵抗効果を有する強磁性体薄膜２４と
の境界線２９がバイアス磁界方向Ｙに対してパターン１
９，２１では４５°，パターン２０，２２では−４５°
となるいわゆるバーバーポール型に形成されている。FIG. 4 shows a block diagram of a modification of the magnetoresistive element 7. In this modification, patterns 19 to 22 are formed by alternately forming conductive thin films 23 and ferromagnetic thin films 24 on an insulating substrate 18 made of glass or the like. A boundary line 29 between the conductive thin film 23 and the ferromagnetic thin film 24 having a magnetoresistive effect has a pattern 1 in the bias magnetic field direction Y.
45 degrees for 9 and 21, -45 degrees for patterns 20 and 22
It is formed into a so-called barber pole type.
【００２５】パターン１９〜２２の間には電極２５〜２
８が接続され、図３の磁気抵抗素子７と同様にブリッジ
回路が構成されており、電極２５，２７との間に一定電
圧が印加され、電極２６，２８間の電圧を測定する。Between the patterns 19-22 are electrodes 25-2.
8 is connected to form a bridge circuit like the magnetoresistive element 7 of FIG. 3, a constant voltage is applied between the electrodes 25 and 27, and the voltage between the electrodes 26 and 28 is measured.
【００２６】本変形例の動作は図３に示す磁気抵抗素子
７と同じであるためその説明は省略する。Since the operation of this modification is the same as that of the magnetoresistive element 7 shown in FIG. 3, the description thereof will be omitted.
【００２７】本変形例では導電薄膜２３と強磁性体薄膜
２４との境界線２９にバイアス磁界方向Ｙに対して傾き
を設けているため、パターン１９〜２２自体には傾きを
設ける必要がない。従って、パターン１９〜２２の形状
を単純化でき、コンパクトなパターンで形成でき、素子
を小型化することができる。In this modification, since the boundary line 29 between the conductive thin film 23 and the ferromagnetic thin film 24 is inclined with respect to the bias magnetic field direction Y, it is not necessary to incline the patterns 19 to 22 themselves. Therefore, the shapes of the patterns 19 to 22 can be simplified, the patterns can be formed in a compact pattern, and the element can be downsized.
【００２８】なお、以上のようなバーバーポール型の磁
気抵抗素子をセンス電流ｉの方向が異方性方向に４５°
となるように構成すれば無バイアス磁界で動作させるこ
ともできる。In the above-mentioned barber pole type magnetoresistive element, the direction of the sense current i is 45 ° in the anisotropic direction.
It is also possible to operate with a non-biased magnetic field.
【００２９】次に再び図２に戻って説明を続ける。磁気
抵抗素子７は検出磁界の印加方向（矢印Ｘ方向）に対し
て角度θ傾斜して配設されている。このため、磁気抵抗
素子７には検出磁界をＨとすると磁気抵抗素子７に平行
な成分Ｈcos θが印加されることになる。Next, returning to FIG. 2 again, the description will be continued. The magnetoresistive element 7 is arranged so as to be inclined by an angle θ with respect to the direction of application of the detection magnetic field (direction of arrow X). Therefore, when the detection magnetic field is H, the component H cos θ parallel to the magnetoresistive element 7 is applied to the magnetoresistive element 7.
【００３０】図５に本発明の第１実施例の出力特性図を
示す。図５（Ａ）は検出磁界Ｈに対する磁気抵抗素子７
の出力レベルを示す。同図中、実線はθ＝０，つまり、
検出磁界Ｈに対して磁気抵抗素子７が平行に配置された
場合の検出磁界Ｈに対する磁気抵抗素子７の出力特性を
示し、破線はθ＝α（−π／２＜α＜π／２），つま
り、検出磁界Ｈに対して磁気抵抗素子７がαだけ傾斜し
て配置された場合の検出磁界Ｈに対する磁気抵抗素子７
の出力特性を示す。FIG. 5 shows an output characteristic diagram of the first embodiment of the present invention. FIG. 5A shows the magnetoresistive element 7 for the detection magnetic field H.
Indicates the output level of. In the figure, the solid line is θ = 0, that is,
The output characteristics of the magnetoresistive element 7 with respect to the detected magnetic field H when the magnetoresistive element 7 is arranged parallel to the detected magnetic field H are shown, and the broken line shows θ = α (−π / 2 <α <π / 2), That is, the magnetoresistive element 7 with respect to the detection magnetic field H when the magnetoresistive element 7 is arranged to be inclined by α with respect to the detection magnetic field H.
The output characteristics of
【００３１】図５（Ａ）に示すように磁気抵抗素子７の
出力は磁気抵抗素子７を検出磁界Ｈに対して傾斜させる
とその傾斜角度θに応じた分、検出磁界Ｈに対する出力
の変位が鈍くなることがわかる。つまり、検出感度を低
下させることができる。As shown in FIG. 5A, when the magnetoresistive element 7 is tilted with respect to the detection magnetic field H, the output is displaced with respect to the detection magnetic field H by an amount corresponding to the tilt angle θ. You can see that it becomes dull. That is, the detection sensitivity can be reduced.
【００３２】また、磁気抵抗素子７の飽和磁界ＨS も検
出磁界Ｈに対する出力の変位が鈍くなる分、大きく取る
ことができる。図５（Ｂ）に磁気抵抗素子７の傾斜角度
θに対する飽和磁界ＨS の特性を示す。図５（Ｂ）に示
すように角度θが大きくなるに従って、飽和磁界ＨS が
増加することがわかる。Further, the saturation magnetic field H S of the magnetoresistive element 7 can be made large because the displacement of the output with respect to the detection magnetic field H becomes dull. FIG. 5B shows the characteristic of the saturation magnetic field H S with respect to the inclination angle θ of the magnetoresistive element 7. As shown in FIG. 5B, it can be seen that the saturation magnetic field H S increases as the angle θ increases.
【００３３】つまり、磁気抵抗素子７の傾斜角度θに応
じて検出結果Ｈの範囲を拡大させることができる。That is, the range of the detection result H can be expanded according to the inclination angle θ of the magnetoresistive element 7.
【００３４】図６に実際の測定による出力特性図を示
す。図に示すようにθが大きくなるほど出力電圧の傾斜
が緩やかになり、飽和磁界ＨS1〜ＨS4も大きくなってい
ることがわかる。FIG. 6 shows an output characteristic diagram obtained by actual measurement. As shown in the figure, it can be seen that as θ increases, the slope of the output voltage becomes gentler and the saturation magnetic fields H S1 to H S4 also increase.
【００３５】図７に素子角度θに対する飽和磁界ＨS の
特性図を示す。同図中、□は実測値、＋は理論値（ＨS
＝ＨS0sec θ）を示す。図に示すように角度θが大きく
なるに従って飽和磁界ＨS も大きくなることがわかり、
実測値と理論値とが近似していることもわかる。FIG. 7 shows a characteristic diagram of the saturation magnetic field H S with respect to the element angle θ. In the figure, □ is the measured value, + is the theoretical value (H S
= H S0 sec θ). It can be seen that as the angle θ increases, the saturation magnetic field H S also increases as shown in the figure,
It can also be seen that the measured value and the theoretical value are close.
【００３６】図８に素子角度θに対する感度Ｋの特性図
を示す。同図中、□は実測値、＋は理論値（Ｋ＝Ｋ0 co
s θ）を示す。図に示すように角度θが大きくなるに従
って感度Ｋ（ｍＶ／θｅ）は小さくなることがわかり、
実測値と理論値とは近似していることがわかる。FIG. 8 shows a characteristic diagram of the sensitivity K with respect to the element angle θ. In the figure, □ is a measured value, + is a theoretical value (K = K 0 co
s θ). As shown in the figure, the sensitivity K (mV / θe) decreases as the angle θ increases,
It can be seen that the measured value and the theoretical value are close to each other.
【００３７】以上のように本実施例によれば、１つの磁
気抵抗素子７の検出磁界Ｈに対する傾斜角度θを変化さ
せることにより、飽和磁界ＨS 及び感度Ｋを調整でき、
測定しようとする磁界に合った飽和磁界ＨS 及び感度Ｋ
が得られ、１つの磁気抵抗素子７を広い検出範囲に適用
できる。このため、安価に磁気センサを構成でき、ま
た、磁気センサの利用可能範囲も拡大できる。As described above, according to this embodiment, the saturation magnetic field H S and the sensitivity K can be adjusted by changing the inclination angle θ of one magnetoresistive element 7 with respect to the detected magnetic field H.
Saturation magnetic field H S and sensitivity K suitable for the magnetic field to be measured
Therefore, one magnetoresistive element 7 can be applied to a wide detection range. Therefore, the magnetic sensor can be constructed at low cost, and the usable range of the magnetic sensor can be expanded.
【００３８】図９に本発明の第２実施例の構成図を示
す。同図中、図１と同一構成部分には同一符号を付し、
その説明は省略する。FIG. 9 shows a block diagram of the second embodiment of the present invention. In the figure, the same components as those in FIG.
The description is omitted.
【００３９】本実施例は検出磁界の方向を折曲させるこ
とにより磁気抵抗素子７に対する検出磁界の方向を調整
する構成としてなる。In this embodiment, the direction of the detection magnetic field with respect to the magnetoresistive element 7 is adjusted by bending the direction of the detection magnetic field.
【００４０】コア３２は図１のコア２と略同一の構成で
はあるが、ギャップ３を形成する端面３２ａ，３２ｂに
傾斜が設けてあるところが異なる。The core 32 has substantially the same structure as the core 2 shown in FIG. 1, except that the end faces 32a and 32b forming the gap 3 are provided with an inclination.
【００４１】図１０に本発明の第２実施例の要部の構成
図を示す。コア３２の端面３２ａと端面３２ｂとは互い
に平行に形成され、角度θの傾斜をもって形成されてい
る。このため、端面３２ａから出力磁束は最短距離で端
面３２ｂに到達しようとするため、コア３２内を矢印Ｃ
方向に流れた磁束はギャップ３で折曲され、略矢印Ｄ方
向に曲げられる。このため、第１実施例同様に検出磁界
を磁気抵抗素子７に対して角度をもって印加することが
できる。FIG. 10 is a block diagram showing the essential parts of the second embodiment of the present invention. The end surface 32a and the end surface 32b of the core 32 are formed in parallel with each other and are formed with an inclination of an angle θ. For this reason, the output magnetic flux from the end face 32a tries to reach the end face 32b in the shortest distance, so that the inside of the core 32 is indicated by the arrow C.
The magnetic flux flowing in the direction is bent at the gap 3 and bent in the direction of the arrow D. Therefore, the detection magnetic field can be applied to the magnetoresistive element 7 at an angle as in the first embodiment.
【００４２】端面３２ａ，３２ｂの傾斜角度θを調整す
ることにより検出磁界の磁気抵抗素子７への印加方向を
可変でき、第１実施例と同様な効果を得ることができ
る。By adjusting the inclination angle θ of the end faces 32a, 32b, the direction of application of the detected magnetic field to the magnetoresistive element 7 can be varied, and the same effect as in the first embodiment can be obtained.
【００４３】図１１に本発明の第３実施例の構成図を示
す。同図中、図１と同一構成部分には同一符号を付し、
その説明は省略する。FIG. 11 shows a block diagram of the third embodiment of the present invention. In the figure, the same components as those in FIG.
The description is omitted.
【００４４】本実施例は磁気抵抗素子７の傾斜角を可変
できるように構成したものである。図１１において、４
１は調整手段を示す。調整手段４１はステージ４２，回
転軸４３，軸受４４，調整ツマミ４５より構成される。In this embodiment, the tilt angle of the magnetoresistive element 7 is variable. In FIG. 11, 4
Reference numeral 1 indicates an adjusting means. The adjusting means 41 includes a stage 42, a rotary shaft 43, a bearing 44, and an adjusting knob 45.
【００４５】ステージ４２は絶縁材よりなり、その上面
に磁気抵抗素子７が固着される。磁気抵抗素子７はステ
ージ３２上面に形成された接続パターン４６とワイヤ４
７により接続される。接続パターン３６はステージ３２
の端部に配線され、コネクタ４８と接続される。コネク
タ４８には接続コード４９が接続され、外部の信号処理
部等に接続される。The stage 42 is made of an insulating material, and the magnetoresistive element 7 is fixed to the upper surface thereof. The magnetoresistive element 7 includes the connection pattern 46 and the wire 4 formed on the upper surface of the stage 32.
Connected by 7. The connection pattern 36 is the stage 32
Is connected to the connector 48. A connection cord 49 is connected to the connector 48 and is connected to an external signal processing unit or the like.
【００４６】ステージ４２の平行する一対の側端部には
回転軸４３が固定される。回転軸４３はステージ４２の
両側に延出され、軸受４４に回転自在に保持される。ま
た回転軸４３の一端はバイアス磁石８を貫通してケース
４の外部に延出し、その先端には調整ツマミ４５が固定
される。A rotary shaft 43 is fixed to a pair of parallel side ends of the stage 42. The rotating shaft 43 extends on both sides of the stage 42 and is rotatably held by a bearing 44. Further, one end of the rotary shaft 43 penetrates the bias magnet 8 and extends to the outside of the case 4, and an adjusting knob 45 is fixed to the tip thereof.
【００４７】調整ツマミ４５を回転させることにより回
転軸３３が軸受４４に保持されつつ、回転し、ステージ
４２が矢印Ｅ方向に回転される。By rotating the adjusting knob 45, the rotary shaft 33 rotates while being held by the bearing 44, and the stage 42 rotates in the direction of arrow E.
【００４８】このように、調整ツマミ４５を回転させる
ことによりステージ４２が矢印Ｅ方向に回転し、ステー
ジ４２上に搭載された磁気抵抗素子７の角度を調整でき
る。従って、検出磁界Ｈに対して磁気抵抗素子７の角度
を自由に可変でき、飽和磁界ＨS 及び感度Ｋを自由に調
整できるため、広範囲の検出磁界Ｈに対して対向でき
る。In this way, by rotating the adjusting knob 45, the stage 42 rotates in the direction of arrow E, and the angle of the magnetoresistive element 7 mounted on the stage 42 can be adjusted. Therefore, the angle of the magnetoresistive element 7 can be freely changed with respect to the detection magnetic field H, and the saturation magnetic field H S and the sensitivity K can be freely adjusted, so that the detection magnetic field H can be opposed to a wide range.
【００４９】なお、上記実施例では磁気センサを用いた
電流測定装置に適用しているが、これに限ることはな
く、磁気測定一般に用いることができる。Although the above embodiment is applied to the current measuring device using the magnetic sensor, the present invention is not limited to this and can be used for general magnetic measurement.
【００５０】[0050]
【発明の効果】上述の如く、本発明によれば、磁界が印
加される方向に対して素子の角度を調整することにより
磁界の強さの検出感度を可変できるため、同一の素子で
広範囲の磁界の強さに対応でき、種々の磁気測定に用い
ることができる等の特長を有する。As described above, according to the present invention, the detection sensitivity of the strength of the magnetic field can be varied by adjusting the angle of the element with respect to the direction in which the magnetic field is applied. It has the features that it can handle the strength of magnetic field and can be used for various magnetic measurements.
【図１】本発明の第１実施例の斜視図である。FIG. 1 is a perspective view of a first embodiment of the present invention.
【図２】本発明の第１実施例の要部の斜視図である。FIG. 2 is a perspective view of a main part of the first embodiment of the present invention.
【図３】本発明の第１実施例の磁気抵抗素子の構成図で
ある。FIG. 3 is a configuration diagram of a magnetoresistive element according to a first embodiment of the present invention.
【図４】本発明の第１実施例の磁気抵抗素子の変形例の
構成図である。FIG. 4 is a configuration diagram of a modified example of the magnetoresistive element according to the first embodiment of the present invention.
【図５】本発明の第１実施例の出力特性図である。FIG. 5 is an output characteristic diagram of the first embodiment of the present invention.
【図６】本発明の第１実施例の実際の測定による出力特
性図である。FIG. 6 is an output characteristic diagram of an actual measurement according to the first embodiment of the present invention.
【図７】本発明の第１実施例の素子角度と飽和磁界の関
係を示す図である。FIG. 7 is a diagram showing a relationship between an element angle and a saturation magnetic field according to the first embodiment of the present invention.
【図８】本発明の第１実施例の素子角度と感度の関係を
示す図である。FIG. 8 is a diagram showing a relationship between an element angle and sensitivity according to the first embodiment of the present invention.
【図９】本発明の第２実施例の構成図である。FIG. 9 is a configuration diagram of a second embodiment of the present invention.
【図１０】本発明の第２実施例の要部の構成図である。FIG. 10 is a configuration diagram of a main part of a second embodiment of the present invention.
【図１１】本発明の第３実施例の要部の構成図である。FIG. 11 is a configuration diagram of a main part of a third embodiment of the present invention.
【図１２】従来の一例の構成図である。FIG. 12 is a configuration diagram of a conventional example.
【符号の説明】 １ 磁気センサ部 ２ コア ３ ギャップ ４ ケース ５ ケーブル ６ 測定穴 ７ 磁気抵抗素子 ８ バイアス磁石[Explanation of symbols] 1 magnetic sensor part 2 core 3 gap 4 case 5 cable 6 measurement hole 7 magnetoresistive element 8 bias magnet
Claims (4)
一定の検出感度を有する検出素子（７）に所定の方向か
ら磁界を印加し、該磁界の強さを検出する磁気センサに
おいて、 前記磁界が印加される前記所定の方向に対して前記素子
（７）の相対的角度を可変にすることにより前記磁界の
強さの検出感度の調整を得るように構成することを特徴
とする磁気センサ。1. A magnetic sensor for detecting a strength of a magnetic field by applying a magnetic field from a predetermined direction to a detection element (7) having a constant detection sensitivity to a magnetic field applied from a constant direction, A magnetic sensor characterized in that the relative angle of the element (7) is made variable with respect to the predetermined direction to which a magnetic field is applied so as to adjust the detection sensitivity of the strength of the magnetic field. .
により、前記磁界が印加される方向に対する前記素子
（７）の相対的角度を可変にすることを特徴とする請求
項１記載の磁気センサ。2. Magnetic according to claim 1, characterized in that the angle of the element (7) is varied to make the relative angle of the element (7) variable with respect to the direction in which the magnetic field is applied. Sensor.
方向を折曲させることにより、前記磁界が印加される方
向に対する前記素子（７）の相対的角度を可変にするこ
とを特徴とする請求項１記載の磁気センサ。3. The relative angle of the element (7) with respect to the direction in which the magnetic field is applied is variable by bending the direction in which the magnetic field is applied to the element (7). Item 1. The magnetic sensor according to Item 1.
対して回転自在に保持する調整手段（３１）を有し、前
記調整手段（３１）により前記素子（７）の前記磁界の
印加方向に対する傾斜角度（θ）を調整することにより
前記検出感度を可変できる構成としたことを特徴とする
請求項１記載の磁気センサ。4. An adjusting means (31) for holding the element (7) rotatably with respect to the application direction of the magnetic field, and applying the magnetic field of the element (7) by the adjusting means (31). The magnetic sensor according to claim 1, wherein the detection sensitivity is variable by adjusting an inclination angle (θ) with respect to the direction.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5143872A JPH0720218A (en) | 1993-06-15 | 1993-06-15 | Magnetic sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5143872A JPH0720218A (en) | 1993-06-15 | 1993-06-15 | Magnetic sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0720218A true JPH0720218A (en) | 1995-01-24 |
Family
ID=15348969
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5143872A Withdrawn JPH0720218A (en) | 1993-06-15 | 1993-06-15 | Magnetic sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0720218A (en) |
Cited By (10)
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|---|---|---|---|---|
| JP2001304805A (en) * | 2000-04-25 | 2001-10-31 | Tokai Rika Co Ltd | Detecting device for rotational angle |
| JP2007225421A (en) * | 2006-02-23 | 2007-09-06 | Yamanashi Nippon Denki Kk | Magnetometric sensor, its manufacturing method, rotation detection device and position detection device |
| JP2008309571A (en) * | 2007-06-13 | 2008-12-25 | Ricoh Co Ltd | Magnetic sensing apparatus |
| JP2009002699A (en) * | 2007-06-19 | 2009-01-08 | Fdk Corp | Magnetic field intensity measuring method, magnetic field intensity sensor, and direct current sensor |
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| JP2016537629A (en) * | 2013-11-15 | 2016-12-01 | エプコス アクチエンゲゼルシャフトＥｐｃｏｓ Ａｇ | Apparatus, arrangement and method for measuring current intensity in a primary conductor through which current flows |
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-
1993
- 1993-06-15 JP JP5143872A patent/JPH0720218A/en not_active Withdrawn
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001304805A (en) * | 2000-04-25 | 2001-10-31 | Tokai Rika Co Ltd | Detecting device for rotational angle |
| JP2007225421A (en) * | 2006-02-23 | 2007-09-06 | Yamanashi Nippon Denki Kk | Magnetometric sensor, its manufacturing method, rotation detection device and position detection device |
| JP2008309571A (en) * | 2007-06-13 | 2008-12-25 | Ricoh Co Ltd | Magnetic sensing apparatus |
| JP2009002699A (en) * | 2007-06-19 | 2009-01-08 | Fdk Corp | Magnetic field intensity measuring method, magnetic field intensity sensor, and direct current sensor |
| JP2012078362A (en) * | 2011-11-22 | 2012-04-19 | Fdk Corp | Magnetic field strength sensor, dc current sensor, and method for measuring magnetic field strength |
| JPWO2014181382A1 (en) * | 2013-05-10 | 2017-02-23 | 株式会社村田製作所 | Magnetic current sensor and current measuring method |
| WO2014181382A1 (en) * | 2013-05-10 | 2014-11-13 | 株式会社村田製作所 | Magnetic current sensor and current measurement method |
| US10184959B2 (en) | 2013-05-10 | 2019-01-22 | Murata Manufacturing Co., Ltd. | Magnetic current sensor and current measurement method |
| US10018656B2 (en) | 2013-11-15 | 2018-07-10 | Epcos Ag | Device, arrangement, and method for measuring a current intensity in a primary conductor through which current flows |
| JP2016537629A (en) * | 2013-11-15 | 2016-12-01 | エプコス アクチエンゲゼルシャフトＥｐｃｏｓ Ａｇ | Apparatus, arrangement and method for measuring current intensity in a primary conductor through which current flows |
| JP2015194389A (en) * | 2014-03-31 | 2015-11-05 | Tdk株式会社 | Magnetic field detection device and multi piece substrate |
| WO2019043602A1 (en) * | 2017-09-01 | 2019-03-07 | Te Connectivity Corporation | Hall effect current sensor |
| CN111033277A (en) * | 2017-09-01 | 2020-04-17 | 泰连公司 | Hall effect current sensor |
| US10823764B2 (en) | 2017-09-01 | 2020-11-03 | Te Connectivity Corporation | Hall effect current sensor |
| JP2020042038A (en) * | 2019-11-26 | 2020-03-19 | 株式会社東芝 | Magnetic sensor, living cell detector, and diagnostic device |
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