JPH0472382B2 - - Google Patents
Info
- Publication number
- JPH0472382B2 JPH0472382B2 JP62123740A JP12374087A JPH0472382B2 JP H0472382 B2 JPH0472382 B2 JP H0472382B2 JP 62123740 A JP62123740 A JP 62123740A JP 12374087 A JP12374087 A JP 12374087A JP H0472382 B2 JPH0472382 B2 JP H0472382B2
- Authority
- JP
- Japan
- Prior art keywords
- gate electrode
- forming
- shot
- active layer
- drain region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12374087A JPS6323370A (ja) | 1987-05-22 | 1987-05-22 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12374087A JPS6323370A (ja) | 1987-05-22 | 1987-05-22 | 半導体装置の製造方法 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP55189544A Division JPS57113289A (en) | 1980-12-30 | 1980-12-30 | Semiconductor device and its manufacture |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6323370A JPS6323370A (ja) | 1988-01-30 |
JPH0472382B2 true JPH0472382B2 (en, 2012) | 1992-11-18 |
Family
ID=14868160
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12374087A Granted JPS6323370A (ja) | 1987-05-22 | 1987-05-22 | 半導体装置の製造方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6323370A (en, 2012) |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2769162B2 (ja) * | 1988-07-08 | 1998-06-25 | 富士通株式会社 | Cadシステムにおける操作復元処理方式 |
-
1987
- 1987-05-22 JP JP12374087A patent/JPS6323370A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS6323370A (ja) | 1988-01-30 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4392150A (en) | MOS Integrated circuit having refractory metal or metal silicide interconnect layer | |
JPH0219975B2 (en, 2012) | ||
KR900008277B1 (ko) | 전계효과 트랜지스터의 제조방법 | |
JPH0354464B2 (en, 2012) | ||
JPH02205362A (ja) | GaAs集積回路およびその製造方法 | |
JPH0786310A (ja) | 高融点金属ゲート電極の形成方法 | |
US4586063A (en) | Schottky barrier gate FET including tungsten-aluminum alloy | |
JPH05109762A (ja) | 半導体装置及びその製造方法 | |
JP2638411B2 (ja) | Mos型半導体装置の製造方法 | |
JPH0472382B2 (en, 2012) | ||
JPH063814B2 (ja) | 半導体装置の製造方法 | |
JPH0515303B2 (en, 2012) | ||
JPH0515304B2 (en, 2012) | ||
JPS61237470A (ja) | 半導体装置 | |
JPH07321312A (ja) | 半導体装置の製造方法,及び半導体装置 | |
JPS6160591B2 (en, 2012) | ||
JPH0358533B2 (en, 2012) | ||
DE3375860D1 (en) | Method of manufacturing integrated mos field effect transistors with an additional interconnection level consisting of metal silicides | |
JPS6323369A (ja) | 半導体装置の製造方法 | |
JPH0612822B2 (ja) | 半導体装置 | |
JPH0249438A (ja) | 半導体装置の製造方法 | |
JPH0622247B2 (ja) | 電界効果型半導体装置 | |
JPH0213929B2 (en, 2012) | ||
JPH0353774B2 (en, 2012) | ||
JP3045862B2 (ja) | 半導体素子の製造方法 |