JPH0469415B2 - - Google Patents

Info

Publication number
JPH0469415B2
JPH0469415B2 JP59133117A JP13311784A JPH0469415B2 JP H0469415 B2 JPH0469415 B2 JP H0469415B2 JP 59133117 A JP59133117 A JP 59133117A JP 13311784 A JP13311784 A JP 13311784A JP H0469415 B2 JPH0469415 B2 JP H0469415B2
Authority
JP
Japan
Prior art keywords
plasma
ions
processing apparatus
ion
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59133117A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6113625A (ja
Inventor
Tooru Ootsubo
Susumu Aiuchi
Takashi Kamimura
Minoru Noguchi
Teru Fujii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP13311784A priority Critical patent/JPS6113625A/ja
Priority to KR1019840006435A priority patent/KR890004881B1/ko
Priority to US06/662,014 priority patent/US4808258A/en
Priority to EP84112571A priority patent/EP0140294B1/en
Priority to DE8484112571T priority patent/DE3482076D1/de
Publication of JPS6113625A publication Critical patent/JPS6113625A/ja
Publication of JPH0469415B2 publication Critical patent/JPH0469415B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • H01J37/32137Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32146Amplitude modulation, includes pulsing
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/517Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using a combination of discharges covered by two or more of groups C23C16/503 - C23C16/515
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • H01J37/32137Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155Frequency modulation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • H01J37/32137Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155Frequency modulation
    • H01J37/32165Plural frequencies
JP13311784A 1983-10-19 1984-06-29 プラズマ処理装置 Granted JPS6113625A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP13311784A JPS6113625A (ja) 1984-06-29 1984-06-29 プラズマ処理装置
KR1019840006435A KR890004881B1 (ko) 1983-10-19 1984-10-17 플라즈마 처리 방법 및 그 장치
US06/662,014 US4808258A (en) 1983-10-19 1984-10-18 Plasma processing method and apparatus for carrying out the same
EP84112571A EP0140294B1 (en) 1983-10-19 1984-10-18 Plasma processing method and apparatus for carrying out the same
DE8484112571T DE3482076D1 (de) 1983-10-19 1984-10-18 Plasmabearbeitungsverfahren und geraet zur anwendung dieses verfahrens.

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13311784A JPS6113625A (ja) 1984-06-29 1984-06-29 プラズマ処理装置

Publications (2)

Publication Number Publication Date
JPS6113625A JPS6113625A (ja) 1986-01-21
JPH0469415B2 true JPH0469415B2 (ko) 1992-11-06

Family

ID=15097188

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13311784A Granted JPS6113625A (ja) 1983-10-19 1984-06-29 プラズマ処理装置

Country Status (1)

Country Link
JP (1) JPS6113625A (ko)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH088237B2 (ja) * 1986-10-17 1996-01-29 株式会社日立製作所 プラズマ処理方法
KR900007687B1 (ko) * 1986-10-17 1990-10-18 가부시기가이샤 히다찌세이사꾸쇼 플라즈마처리방법 및 장치
FR2616030A1 (fr) * 1987-06-01 1988-12-02 Commissariat Energie Atomique Procede de gravure ou de depot par plasma et dispositif pour la mise en oeuvre du procede
JP2552292B2 (ja) * 1987-06-15 1996-11-06 日本真空技術株式会社 マイクロ波プラズマ処理装置
KR900013595A (ko) * 1989-02-15 1990-09-06 미다 가쓰시게 플라즈마 에칭방법 및 장치
JPH06342769A (ja) * 1992-08-21 1994-12-13 Nissin Electric Co Ltd エッチング方法及び装置
JP2845163B2 (ja) * 1994-10-27 1999-01-13 日本電気株式会社 プラズマ処理方法及びその装置
JP2842344B2 (ja) * 1995-11-14 1999-01-06 日本電気株式会社 中性粒子ビーム処理装置
JP3533105B2 (ja) 1999-04-07 2004-05-31 Necエレクトロニクス株式会社 半導体装置の製造方法と製造装置
US7112533B2 (en) 2000-08-31 2006-09-26 Micron Technology, Inc. Plasma etching system and method
US6700090B2 (en) 2002-04-26 2004-03-02 Hitachi High-Technologies Corporation Plasma processing method and plasma processing apparatus
US9197196B2 (en) * 2012-02-22 2015-11-24 Lam Research Corporation State-based adjustment of power and frequency
CN110627644B (zh) * 2019-09-09 2022-06-07 株洲千金药业股份有限公司 一种辣椒素酯类化合物、其药学上可接受的盐及其制备方法和应用

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5779621A (en) * 1980-11-05 1982-05-18 Mitsubishi Electric Corp Plasma processing device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5779621A (en) * 1980-11-05 1982-05-18 Mitsubishi Electric Corp Plasma processing device

Also Published As

Publication number Publication date
JPS6113625A (ja) 1986-01-21

Similar Documents

Publication Publication Date Title
KR890004881B1 (ko) 플라즈마 처리 방법 및 그 장치
US5345145A (en) Method and apparatus for generating highly dense uniform plasma in a high frequency electric field
JPH01149965A (ja) プラズマ反応装置
JPH0469415B2 (ko)
JP2764575B2 (ja) ラジカルの制御方法
JPS5947733A (ja) プラズマプロセス方法および装置
JPS63155728A (ja) プラズマ処理装置
JP3223692B2 (ja) ドライエッチング方法
JP3186689B2 (ja) プラズマ処理方法およびその装置
JP2791287B2 (ja) プラズマエッチング処理方法及びその装置
US4946537A (en) Plasma reactor
JP2569019B2 (ja) エッチング方法及びその装置
JP2000150196A (ja) プラズマ処理方法およびその装置
JPH0766918B2 (ja) プラズマ処理装置
JPH0570930B2 (ko)
JPH01187824A (ja) プラズマ処理装置
JPH06104210A (ja) マイクロ波プラズマ処理装置
JP3082331B2 (ja) 半導体製造装置および半導体装置の製造方法
JPS627131A (ja) ドライエツチング装置
JPS611024A (ja) 半導体回路製造装置
JP2515885B2 (ja) プラズマ処理装置
JP3296392B2 (ja) ドライエッチング方法
JP2001077085A (ja) 試料の表面処理方法
JPH0530500B2 (ko)
JPH09161993A (ja) 2重コイルを用いた多段コイルを有するプラズマ処理装置及び方法