JPH0469415B2 - - Google Patents
Info
- Publication number
- JPH0469415B2 JPH0469415B2 JP59133117A JP13311784A JPH0469415B2 JP H0469415 B2 JPH0469415 B2 JP H0469415B2 JP 59133117 A JP59133117 A JP 59133117A JP 13311784 A JP13311784 A JP 13311784A JP H0469415 B2 JPH0469415 B2 JP H0469415B2
- Authority
- JP
- Japan
- Prior art keywords
- plasma
- ions
- processing apparatus
- ion
- voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 150000002500 ions Chemical class 0.000 claims description 52
- 230000001133 acceleration Effects 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 5
- 230000005684 electric field Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 2
- 230000000644 propagated effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
- H01J37/32146—Amplitude modulation, includes pulsing
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/517—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using a combination of discharges covered by two or more of groups C23C16/503 - C23C16/515
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
- H01J37/32155—Frequency modulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
- H01J37/32155—Frequency modulation
- H01J37/32165—Plural frequencies
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13311784A JPS6113625A (ja) | 1984-06-29 | 1984-06-29 | プラズマ処理装置 |
KR1019840006435A KR890004881B1 (ko) | 1983-10-19 | 1984-10-17 | 플라즈마 처리 방법 및 그 장치 |
US06/662,014 US4808258A (en) | 1983-10-19 | 1984-10-18 | Plasma processing method and apparatus for carrying out the same |
EP84112571A EP0140294B1 (en) | 1983-10-19 | 1984-10-18 | Plasma processing method and apparatus for carrying out the same |
DE8484112571T DE3482076D1 (de) | 1983-10-19 | 1984-10-18 | Plasmabearbeitungsverfahren und geraet zur anwendung dieses verfahrens. |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13311784A JPS6113625A (ja) | 1984-06-29 | 1984-06-29 | プラズマ処理装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6113625A JPS6113625A (ja) | 1986-01-21 |
JPH0469415B2 true JPH0469415B2 (ko) | 1992-11-06 |
Family
ID=15097188
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13311784A Granted JPS6113625A (ja) | 1983-10-19 | 1984-06-29 | プラズマ処理装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6113625A (ko) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH088237B2 (ja) * | 1986-10-17 | 1996-01-29 | 株式会社日立製作所 | プラズマ処理方法 |
KR900007687B1 (ko) * | 1986-10-17 | 1990-10-18 | 가부시기가이샤 히다찌세이사꾸쇼 | 플라즈마처리방법 및 장치 |
FR2616030A1 (fr) * | 1987-06-01 | 1988-12-02 | Commissariat Energie Atomique | Procede de gravure ou de depot par plasma et dispositif pour la mise en oeuvre du procede |
JP2552292B2 (ja) * | 1987-06-15 | 1996-11-06 | 日本真空技術株式会社 | マイクロ波プラズマ処理装置 |
KR900013595A (ko) * | 1989-02-15 | 1990-09-06 | 미다 가쓰시게 | 플라즈마 에칭방법 및 장치 |
JPH06342769A (ja) * | 1992-08-21 | 1994-12-13 | Nissin Electric Co Ltd | エッチング方法及び装置 |
JP2845163B2 (ja) * | 1994-10-27 | 1999-01-13 | 日本電気株式会社 | プラズマ処理方法及びその装置 |
JP2842344B2 (ja) * | 1995-11-14 | 1999-01-06 | 日本電気株式会社 | 中性粒子ビーム処理装置 |
JP3533105B2 (ja) | 1999-04-07 | 2004-05-31 | Necエレクトロニクス株式会社 | 半導体装置の製造方法と製造装置 |
US7112533B2 (en) | 2000-08-31 | 2006-09-26 | Micron Technology, Inc. | Plasma etching system and method |
US6700090B2 (en) | 2002-04-26 | 2004-03-02 | Hitachi High-Technologies Corporation | Plasma processing method and plasma processing apparatus |
US9197196B2 (en) * | 2012-02-22 | 2015-11-24 | Lam Research Corporation | State-based adjustment of power and frequency |
CN110627644B (zh) * | 2019-09-09 | 2022-06-07 | 株洲千金药业股份有限公司 | 一种辣椒素酯类化合物、其药学上可接受的盐及其制备方法和应用 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5779621A (en) * | 1980-11-05 | 1982-05-18 | Mitsubishi Electric Corp | Plasma processing device |
-
1984
- 1984-06-29 JP JP13311784A patent/JPS6113625A/ja active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5779621A (en) * | 1980-11-05 | 1982-05-18 | Mitsubishi Electric Corp | Plasma processing device |
Also Published As
Publication number | Publication date |
---|---|
JPS6113625A (ja) | 1986-01-21 |
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