JPH0467338B2 - - Google Patents

Info

Publication number
JPH0467338B2
JPH0467338B2 JP57166142A JP16614282A JPH0467338B2 JP H0467338 B2 JPH0467338 B2 JP H0467338B2 JP 57166142 A JP57166142 A JP 57166142A JP 16614282 A JP16614282 A JP 16614282A JP H0467338 B2 JPH0467338 B2 JP H0467338B2
Authority
JP
Japan
Prior art keywords
region
semiconductor layer
semiconductor
source
drain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57166142A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5955074A (ja
Inventor
Koichiro Kotani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP57166142A priority Critical patent/JPS5955074A/ja
Publication of JPS5955074A publication Critical patent/JPS5955074A/ja
Publication of JPH0467338B2 publication Critical patent/JPH0467338B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes

Landscapes

  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Junction Field-Effect Transistors (AREA)
JP57166142A 1982-09-24 1982-09-24 半導体集積回路装置の製造方法 Granted JPS5955074A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57166142A JPS5955074A (ja) 1982-09-24 1982-09-24 半導体集積回路装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57166142A JPS5955074A (ja) 1982-09-24 1982-09-24 半導体集積回路装置の製造方法

Publications (2)

Publication Number Publication Date
JPS5955074A JPS5955074A (ja) 1984-03-29
JPH0467338B2 true JPH0467338B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1992-10-28

Family

ID=15825817

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57166142A Granted JPS5955074A (ja) 1982-09-24 1982-09-24 半導体集積回路装置の製造方法

Country Status (1)

Country Link
JP (1) JPS5955074A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4847212A (en) * 1987-01-12 1989-07-11 Itt Gallium Arsenide Technology Center Self-aligned gate FET process using undercut etch mask
JP4850993B2 (ja) * 2000-01-25 2012-01-11 古河電気工業株式会社 半導体装置およびその製造方法

Also Published As

Publication number Publication date
JPS5955074A (ja) 1984-03-29

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