JPH0465002B2 - - Google Patents
Info
- Publication number
- JPH0465002B2 JPH0465002B2 JP28103985A JP28103985A JPH0465002B2 JP H0465002 B2 JPH0465002 B2 JP H0465002B2 JP 28103985 A JP28103985 A JP 28103985A JP 28103985 A JP28103985 A JP 28103985A JP H0465002 B2 JPH0465002 B2 JP H0465002B2
- Authority
- JP
- Japan
- Prior art keywords
- silicon nitride
- gas
- powder
- chlorine
- temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 31
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 31
- 239000000843 powder Substances 0.000 claims description 18
- 239000000460 chlorine Substances 0.000 claims description 16
- 229910052801 chlorine Inorganic materials 0.000 claims description 15
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 14
- 239000011737 fluorine Substances 0.000 claims description 13
- 229910052731 fluorine Inorganic materials 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 13
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 8
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims 2
- 239000007789 gas Substances 0.000 description 17
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 11
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 229910021529 ammonia Inorganic materials 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 229960002050 hydrofluoric acid Drugs 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- -1 silicon halides Chemical class 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000010574 gas phase reaction Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 238000010298 pulverizing process Methods 0.000 description 2
- 239000011863 silicon-based powder Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- UMVBXBACMIOFDO-UHFFFAOYSA-N [N].[Si] Chemical compound [N].[Si] UMVBXBACMIOFDO-UHFFFAOYSA-N 0.000 description 1
- 150000001804 chlorine Chemical class 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- RAABOESOVLLHRU-UHFFFAOYSA-N diazene Chemical compound N=N RAABOESOVLLHRU-UHFFFAOYSA-N 0.000 description 1
- 229910000071 diazene Inorganic materials 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 1
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 1
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 1
- 230000003301 hydrolyzing effect Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000005049 silicon tetrachloride Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B21/00—Nitrogen; Compounds thereof
- C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
- C01B21/068—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with silicon
- C01B21/0687—After-treatment, e.g. grinding, purification
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Ceramic Products (AREA)
- Treating Waste Gases (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28103985A JPS62143805A (ja) | 1985-12-16 | 1985-12-16 | 窒化珪素粉末から塩素および／またはフツ素を除去する方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28103985A JPS62143805A (ja) | 1985-12-16 | 1985-12-16 | 窒化珪素粉末から塩素および／またはフツ素を除去する方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62143805A JPS62143805A (ja) | 1987-06-27 |
| JPH0465002B2 true JPH0465002B2 (ko) | 1992-10-16 |
Family
ID=17633442
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP28103985A Granted JPS62143805A (ja) | 1985-12-16 | 1985-12-16 | 窒化珪素粉末から塩素および／またはフツ素を除去する方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62143805A (ko) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0618172A1 (en) * | 1993-03-30 | 1994-10-05 | Sumitomo Electric Industries, Ltd. | Silicon nitride powder and method for producing the same |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3829504A1 (de) * | 1988-08-31 | 1990-03-01 | Bayer Ag | Siliciumnitridpulver mit verbesserten oberflaecheneigenschaften sowie verfahren zu deren herstellung |
-
1985
- 1985-12-16 JP JP28103985A patent/JPS62143805A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0618172A1 (en) * | 1993-03-30 | 1994-10-05 | Sumitomo Electric Industries, Ltd. | Silicon nitride powder and method for producing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62143805A (ja) | 1987-06-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS6112844B2 (ko) | ||
| US4676968A (en) | Melt consolidation of silicon powder | |
| JPS5913442B2 (ja) | 高純度の型窒化珪素の製造法 | |
| US3307908A (en) | Preparation of aluminum nitride | |
| NO894770L (no) | Fremgangsmaate ved fremstilling av aluminiumnitrid. | |
| JPH02188412A (ja) | 結晶窒化ケイ素粉末の製造方法 | |
| US5211801A (en) | Method for manufacturing single-crystal silicon carbide | |
| JPH1045474A (ja) | 熱分解炭素被覆黒鉛材の製造方法 | |
| JPS6111886B2 (ko) | ||
| JPH0465002B2 (ko) | ||
| JP2721678B2 (ja) | β−炭化珪素成形体及びその製造法 | |
| JPS5930645B2 (ja) | 高純度α型窒化珪素の製造法 | |
| JPS6111885B2 (ko) | ||
| KR900004489B1 (ko) | 질화알루미늄 분말의 제조방법 | |
| KR950001033B1 (ko) | 저탄소 함량 질화규소의 제조방법 | |
| JP2000044223A (ja) | 炭化珪素の製造方法 | |
| JPH0649565B2 (ja) | α型窒化ケイ素粉末の製造方法 | |
| JP3585302B2 (ja) | 窒化アルミニウムの製造方法 | |
| JPS5973412A (ja) | 窒化けい素粉体の製造方法 | |
| JP3482480B2 (ja) | 耐酸化性に優れた黒鉛−炭化珪素複合体及びその製造方法 | |
| JPS6338541A (ja) | インジウムの精製方法 | |
| JPS58176109A (ja) | α型窒化けい素の製造方法 | |
| JP3539777B2 (ja) | 窒化アルミニウムの製造方法 | |
| JPH062568B2 (ja) | 高純度炭化けい素粉末の製造方法 | |
| JP2670331B2 (ja) | 窒化アルミニウム粉末の製造方法 |