JPH046274B2 - - Google Patents
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- Publication number
- JPH046274B2 JPH046274B2 JP60114780A JP11478085A JPH046274B2 JP H046274 B2 JPH046274 B2 JP H046274B2 JP 60114780 A JP60114780 A JP 60114780A JP 11478085 A JP11478085 A JP 11478085A JP H046274 B2 JPH046274 B2 JP H046274B2
- Authority
- JP
- Japan
- Prior art keywords
- tbf
- light
- emitting layer
- thin film
- light emitting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000010409 thin film Substances 0.000 claims description 18
- 230000005684 electric field Effects 0.000 claims description 10
- 239000010408 film Substances 0.000 claims description 7
- 239000012535 impurity Substances 0.000 claims description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 claims 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims 1
- 239000010410 layer Substances 0.000 description 52
- 238000010586 diagram Methods 0.000 description 6
- 238000005566 electron beam evaporation Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000008188 pellet Substances 0.000 description 3
- -1 rare earth fluoride Chemical class 0.000 description 3
- 229910052761 rare earth metal Inorganic materials 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 229910007609 Zn—S Inorganic materials 0.000 description 2
- 150000001805 chlorine compounds Chemical class 0.000 description 2
- 238000005401 electroluminescence Methods 0.000 description 2
- 239000002784 hot electron Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 229910004299 TbF3 Inorganic materials 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000695 excitation spectrum Methods 0.000 description 1
- 150000002222 fluorine compounds Chemical class 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- LKNRQYTYDPPUOX-UHFFFAOYSA-K trifluoroterbium Chemical compound F[Tb](F)F LKNRQYTYDPPUOX-UHFFFAOYSA-K 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Description
【発明の詳細な説明】
<技術分野>
本発明は電界の印加に応答してEL(エレクト
ロ・ルミネセンス)発光を呈する薄膜EL素子に
関し、特にフツ化物又は塩化物を発光センターと
する発光層を誘電体層で挾設した多層構造の薄膜
EL素子における層間密着性の改善に関するもの
である。[Detailed Description of the Invention] <Technical Field> The present invention relates to a thin film EL device that emits EL (electroluminescence) light in response to the application of an electric field, and particularly relates to a thin film EL device that emits EL (electroluminescence) light in response to the application of an electric field. Multilayer thin film sandwiched between dielectric layers
This invention relates to improving interlayer adhesion in EL devices.
<従来技術>
ZnSまたはZnSe等に発光センターとしてMn等
をドープした発光層の両面は酸化膜または窒化膜
等の誘電体層で被覆して成る二重絶縁構造薄膜
EL素子は、高輝度で発光し、しかも長寿命であ
るという性質を有するため、情報表示用平面デイ
スプレイパネル等としてすでに広範囲な用途に利
用されている。しかしながら、一般的に普及して
いるものはZnS母材中に発光センターとしてMn
をドープしたZnS:Mnを発光層とし、Y2O3や
Si3N4等を誘電体層として発光層の両面に層設し
た黄橙色の発光色のものに限定されており、EL
発光を多色化した薄膜EL素子については実用化
のレベルにまで達していないのが実情である。一
方、近年の情報処理技術の発展にともなつて、デ
ィスプレイにおける表示の多色化は欠くことので
きない要素となりつつある。<Prior art> A double insulation structure thin film consisting of a light-emitting layer made of ZnS or ZnSe doped with Mn, etc. as a light-emitting center, and both sides of the light-emitting layer covered with a dielectric layer such as an oxide film or a nitride film.
EL elements emit light with high brightness and have a long life, so they are already used in a wide range of applications, such as flat display panels for information display. However, the commonly used ones have Mn as a luminescence center in the ZnS matrix.
ZnS doped with: Mn is used as the emissive layer, Y2O3 and
The EL is limited to a yellow-orange luminescent color in which a dielectric layer such as Si 3 N 4 is layered on both sides of the luminescent layer.
The reality is that thin-film EL devices that emit light in multiple colors have not yet reached the level of practical use. On the other hand, with the recent development of information processing technology, multicolor display is becoming an indispensable element.
EL発光の多色化を得る目的で、稀土類フツ化
物等を発光センターとして用いると、たとえば
TbF3、SmF3、TmF3あるいはPrF3により、それ
ぞれ緑色、赤色、青色、白色のEL発光が得られ
ることは良く知られているが、特に発光層を
ZnS:TbF3とした場合には実用的輝度に近い値
が得られるため、緑色EL発光素子として有望視
されている。発光層をZnS:Mnとする薄膜EL素
子の場合、Mr原子はZn格子位置に置換してい
る。これに対し、ZnS:TbF3を発光層とする薄
膜EL素子では、TbF3は分子状及び粒子状の状態
にあり、極論すれば混合状態にある。このため、
ZnS:TbF3発光層と誘電体層との密着力は、
TbF3濃度が高くなる程弱くなり、誘電体層と発
光層間の接合部で剥離という問題が生じる。この
現象は次のような原因によると考えられる。例え
ばTbF3濃度が1.6mol%のZnS膜を想定すれば、
TbF3分子が等間隔に分布しているとして、TbF3
の最短分子間隔中にはZnとSの対が3組だけ存
在すること((1.6/100)1/3=1/4)になる。四方が
ZnとSの対に囲まれたZnとSの対は、TbF3分子
の最稠密面上で、極めて少ない。第3図はこの様
子を模式的に示す説明図である。A1はTbF3の発
光センター、A2はTbF3と接するZn−S対、A3
はTbF3と接しないZn−S対を表わしている。Zn
とSの対に囲まれないZnとSの対が多数生じる
結果、密着力が著しく低下すると考えられる。と
ころで、発光輝度に対する最適膜中のTbF3濃度
は約2mol%を必要とし、このため発光輝度を高
くすることと密着力が強く信頼性の高い素子を製
作することは相反する状況にあつた。この問題は
発光センターとしてTbF3を用いた場合に限らず、
他のフツ化物や塩化物を用いた場合でも同様に生
じる。 For example, when rare earth fluoride is used as a luminescent center for the purpose of obtaining multicolor EL luminescence,
It is well known that TbF 3 , SmF 3 , TmF 3 or PrF 3 can produce green, red, blue, and white EL emissions, respectively, but it is especially important to
When ZnS:TbF 3 is used, it is seen as promising as a green EL light-emitting device because a value close to practical brightness can be obtained. In the case of a thin film EL device whose light emitting layer is ZnS:Mn, Mr atoms are substituted at Zn lattice positions. On the other hand, in a thin film EL device using ZnS:TbF 3 as a light-emitting layer, TbF 3 is in a molecular and particulate state, and in the extreme, in a mixed state. For this reason,
The adhesion between the ZnS:TbF 3 light-emitting layer and the dielectric layer is
The higher the TbF 3 concentration, the weaker it becomes, causing a problem of peeling at the junction between the dielectric layer and the light emitting layer. This phenomenon is thought to be due to the following causes. For example, assuming a ZnS film with a TbF 3 concentration of 1.6 mol%,
Assuming that 3 TbF molecules are distributed at equal intervals, TbF 3
There are only three pairs of Zn and S in the shortest molecular spacing ((1.6/100) 1/3 = 1/4). all sides
There are extremely few Zn and S pairs surrounded by Zn and S pairs on the closest-packed plane of the TbF 3 molecules. FIG. 3 is an explanatory diagram schematically showing this situation. A 1 is the luminescent center of TbF 3 , A 2 is the Zn-S pair in contact with TbF 3 , A 3
represents a Zn-S pair not in contact with TbF 3 . Zn
It is thought that as a result of a large number of pairs of Zn and S that are not surrounded by pairs of Zn and S, the adhesion strength is significantly reduced. By the way, the optimal TbF 3 concentration in the film for luminance needs to be about 2 mol %, and for this reason, increasing the luminance and producing a highly reliable device with strong adhesion are in conflict with each other. This problem is not limited to the case where TbF 3 is used as the luminescent center.
The same problem occurs when other fluorides and chlorides are used.
<発明の概要>
本発明は上述の問題点に鑑み、薄膜EL素子の
信頼性を得るための素子構造を提供することを目
的とする。<Summary of the Invention> In view of the above problems, an object of the present invention is to provide an element structure for obtaining reliability of a thin film EL element.
一般に、二重絶縁構造薄膜EL素子の発光メカ
ニズムは、外部電圧の印加によつて生じた発光層
中の誘起電界により電子が加速され、これよつて
得られるホツトエレクトロンが発光センターへ衝
突して発光センターを励起することにより電磁ス
ペクトルがEL発光として放出される。発光層中
の電界強度は均一でなく誘電体層との界面近傍で
電界が強くなつている。電界が強い程電子のエネ
ルギーは高く、発光センター励起が効率良く行な
われる。しかし電界強度の不均一は、外部電圧が
低い場合すなわち発光輝度一印加電圧特性におい
て低輝度領域でのみ顕著である。実用的に問題と
なる高輝度領域(飽和輝度)では、不均一は生じ
ない。従つて界面近傍で発光センター濃度を下げ
ることによる輝度低下は少ない。以上より、発光
層と誘電体層の界面近傍で発光層中の発光センタ
ー濃度を下げることにより、発光輝度の大幅な低
下をもたらすことなく膜間の剥離による素子の信
頼性低下を防ぐことが可能となる。 In general, the light emitting mechanism of a thin film EL device with a double insulation structure is that electrons are accelerated by an induced electric field in the light emitting layer caused by the application of an external voltage, and the resulting hot electrons collide with the light emitting center to emit light. By exciting the center, electromagnetic spectrum is emitted as EL emission. The electric field strength in the light emitting layer is not uniform, and the electric field is stronger near the interface with the dielectric layer. The stronger the electric field, the higher the energy of the electrons, and the more efficiently the luminescent center is excited. However, the non-uniformity of the electric field strength is noticeable only when the external voltage is low, that is, in the low luminance region of the emission luminance vs. applied voltage characteristic. Non-uniformity does not occur in a high brightness region (saturated brightness) which is a practical problem. Therefore, there is little reduction in brightness due to lowering the luminescent center concentration near the interface. From the above, by lowering the concentration of luminescent centers in the luminescent layer near the interface between the luminescent layer and the dielectric layer, it is possible to prevent device reliability from deteriorating due to interlayer peeling without significantly reducing luminance. becomes.
<実施例>
第1図は本発明の1実施例を示す薄膜EL素子
の構成図である。ガラス基板1上にIn2O3、SnO2
等から成る透明電極2が帯状に配列され、この上
にSi3N4から成る下部誘電体層3がスパツタ法に
より堆積されている。下部誘電体層3上にはZnS
母材中にTbF3をドープした焼結ペレツトを電子
ビーム蒸着することにより得られるZnS:TbF3
から成る発光層が積層されている。この発光層は
下部誘電体層3と接する側に位置するTbF3のド
ープ量が少ない低濃度領域4とこの上に重畳され
るEL発光に最適の濃度にTbF3をドープした高濃
度領域5の計2層構造より構成されている。低濃
度領域4のTbF3濃度は0.1乃至1.0mol%、高濃度
領域5のTbF3濃度は2mol%前後の適当な値に設
定される。低濃度領域4の厚さは10〜1000Å程度
望ましくは50〜500Åの範囲に、また発光層全体
の厚さは2000〜10000Å程度に設定される。発光
層にドープするTbF3の濃度制御は、電子ビーム
蒸着過程でターゲツトとなる焼結ペレツトを
TbF3の含有されたZnSとし、この焼結ペレツト
中のTbF3含有量を制御することにより決定する。
発光層上にはY2O3から成る上部誘電体層7がス
パツタ法又は電子ビーム蒸着法等によつて被覆さ
れている。上部誘電体層7上には背面電極8とし
て蒸着法等により帯状に成形されたAlが透明電
極2と直交する方向に配列され、マトリツクス電
極構造が形成されている。<Example> FIG. 1 is a block diagram of a thin film EL device showing one example of the present invention. In 2 O 3 , SnO 2 on glass substrate 1
A lower dielectric layer 3 made of Si 3 N 4 is deposited thereon by a sputtering method. ZnS on the lower dielectric layer 3
ZnS: TbF 3 obtained by electron beam evaporation of sintered pellets doped with TbF 3 in the base material
A luminescent layer consisting of is laminated. This light-emitting layer consists of a low-concentration region 4 with a small amount of TbF 3 doped located on the side in contact with the lower dielectric layer 3 and a high-concentration region 5 doped with TbF 3 to an optimal concentration for EL emission superimposed thereon. It is composed of a total of two layers. The TbF 3 concentration in the low concentration region 4 is set to an appropriate value of 0.1 to 1.0 mol%, and the TbF 3 concentration in the high concentration region 5 is set to an appropriate value of about 2 mol%. The thickness of the low concentration region 4 is set to about 10 to 1000 Å, preferably 50 to 500 Å, and the thickness of the entire light emitting layer is set to about 2000 to 10000 Å. The concentration of TbF 3 doped in the emissive layer is controlled by controlling the sintered pellets that serve as targets during the electron beam evaporation process.
It is determined by using ZnS containing TbF 3 and controlling the TbF 3 content in this sintered pellet.
An upper dielectric layer 7 made of Y 2 O 3 is coated on the light emitting layer by sputtering or electron beam evaporation. On the upper dielectric layer 7, Al formed into strips by vapor deposition or the like is arranged as a back electrode 8 in a direction perpendicular to the transparent electrode 2, forming a matrix electrode structure.
透明電極2と背面電極8を介して発光層に交流
電界を印加すると、発光層ではホツトエレクトロ
ンが誘起された交流電界の極性に応じて発光層の
界面から他方の界面へ走行し、TbF3の発光セン
ターと衝突して励起スペクトルのEL発光が生起
される。このEL発光は発光特性の最適値に近い
値にTbF3がドープされている主として高濃度領
域5より放射され、ガラス基板1を介して高輝度
の緑色に近い発光が観察される。低濃度領域4は
厚さが薄いため、実質的に高濃度領域5のEL発
光輝度を低下させることはほとんどなく、コント
ラストの高い発光表示を実行することができる。 When an alternating current electric field is applied to the light emitting layer via the transparent electrode 2 and the back electrode 8, hot electrons in the light emitting layer travel from one interface of the light emitting layer to the other depending on the polarity of the induced alternating current electric field, and the TbF 3 Upon collision with the luminescent center, EL emission of the excitation spectrum is generated. This EL emission is mainly emitted from the high concentration region 5 where TbF 3 is doped to a value close to the optimum value of the emission characteristics, and high brightness near green emission is observed through the glass substrate 1. Since the low concentration region 4 is thin, the EL luminance of the high concentration region 5 is hardly lowered, and a high contrast luminescent display can be performed.
TbF3を発光層中に高濃度にドープすると誘電
体層との接合界面で密着力が弱くなる傾向にある
ことは前述した如くであるが、本実施例では、特
に、密着力が主としてフアンデルワールス力に依
存し、酸化膜に比べて密着性の弱いアモルフアス
のSi3N4から成る下部誘電体層3と発光層との接
合界面領域にTbF3のドープ量が少ない低濃度領
域4を介挿して密着力の低下を抑制している。 As mentioned above, when doping TbF 3 into the light emitting layer at a high concentration, the adhesion force tends to weaken at the bonding interface with the dielectric layer. A low concentration region 4 with a small amount of TbF 3 is doped at the junction interface region between the light emitting layer and the lower dielectric layer 3 made of amorphous Si 3 N 4 , which depends on Waals force and has weaker adhesion than an oxide film. This suppresses the drop in adhesion when inserted.
第2図は本発明の他の実施例を示す薄膜EL素
子の構成図である。 FIG. 2 is a configuration diagram of a thin film EL device showing another embodiment of the present invention.
本実施例では発光層と下部誘電体層3の接合界
面領域に上記同様の低濃度領域4を介挿するとと
もに発光層と上部誘電体層7の接合界面領域にも
同様な低濃度領域6を介挿し、発光層と誘電体層
の密着力の低下をより顕著に防止している。上部
の低濃度領域6も厚さは上記同様に10〜1000Å程
度、望ましくは50〜500Åの範囲とする。また上
部誘電体層7も下部誘電体層3と同様な耐水性の
あるSi3N4とし、発光層への湿気侵入を防止する
効果の高い構造とすることができる。 In this embodiment, a low concentration region 4 similar to the above is inserted in the joint interface region between the light emitting layer and the lower dielectric layer 3, and a similar low concentration region 6 is inserted in the joint interface region between the light emitting layer and the upper dielectric layer 7. This significantly prevents a decrease in the adhesion between the light emitting layer and the dielectric layer. The upper low concentration region 6 also has a thickness of about 10 to 1000 Å, preferably 50 to 500 Å, as described above. Further, the upper dielectric layer 7 is also made of Si 3 N 4 which has water resistance similar to the lower dielectric layer 3, and can have a structure that is highly effective in preventing moisture from entering the light emitting layer.
尚、上記実施例はZnS:TbF3を発光層とする
薄膜EL素子について説明したが、発光層母材は
ZnSe,CdSe等用いても良く、発光センターとな
る不純物は他の稀土類フツ化物や塩化物を用いて
も良い。発光センターの種類の選択によつてそれ
に対応したEL発光色が得られ、発光表示の多様
化を計ることができるとともに素子の長期信頼性
も得られる。 Although the above example describes a thin film EL device with a light emitting layer of ZnS: TbF3 , the base material of the light emitting layer is
ZnSe, CdSe, etc. may be used, and other rare earth fluorides or chlorides may be used as impurities that serve as luminescent centers. By selecting the type of light-emitting center, a corresponding EL light color can be obtained, making it possible to diversify light-emitting displays and providing long-term reliability of the device.
<発明の効果>
以上詳説した如く本発明によれば、発光層界面
で接合強度を低下させることなく稀土類化合物に
対応した高輝度のEL発光を得ることができ、表
示の多様化を画ることができる。<Effects of the Invention> As detailed above, according to the present invention, it is possible to obtain high-brightness EL light emission compatible with rare earth compounds without reducing the bonding strength at the interface of the light emitting layer, leading to the diversification of displays. be able to.
第1図は本発明の1実施例を示す薄膜EL素子
の構成図である。第2図は本発明の他の実施例を
示す薄膜EL素子の構成図である。第3図は
ZnS:FbF発光層の原子配列を示す模式説明図で
ある。
1……ガラス基板、2……透明電極、3……下
部誘電体層、4,6……低濃度領域、5……高濃
度領域、7……上部誘電体層、8……背面電極。
FIG. 1 is a block diagram of a thin film EL device showing one embodiment of the present invention. FIG. 2 is a configuration diagram of a thin film EL device showing another embodiment of the present invention. Figure 3 is
FIG. 2 is a schematic explanatory diagram showing the atomic arrangement of a ZnS:FbF light emitting layer. DESCRIPTION OF SYMBOLS 1... Glass substrate, 2... Transparent electrode, 3... Lower dielectric layer, 4, 6... Low concentration region, 5... High concentration region, 7... Upper dielectric layer, 8... Back electrode.
Claims (1)
化物または塩化物の不純物を発光センターとして
ドープした薄膜発光層を絶縁膜で被覆してなる三
層構造部を有し、 前記薄膜発光層の少なくとも一方の絶縁膜との
接合界面近傍は、薄膜発光層の厚さ方向中央部に
比べて、前記不純物濃度が低く形成されてなるこ
とを特徴とする薄膜EL素子。[Scope of Claims] 1. Exhibits EL light emission in response to the application of an electric field, and has a three-layer structure consisting of a thin film light-emitting layer doped with fluoride or chloride impurities as a light-emitting center and covered with an insulating film. . A thin film EL device, characterized in that the impurity concentration near the bonding interface with at least one of the thin film light emitting layers and the insulating film is formed to be lower than that in the central portion in the thickness direction of the thin film light emitting layer.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60114780A JPS61271780A (en) | 1985-05-27 | 1985-05-27 | Thin film el element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60114780A JPS61271780A (en) | 1985-05-27 | 1985-05-27 | Thin film el element |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS61271780A JPS61271780A (en) | 1986-12-02 |
JPH046274B2 true JPH046274B2 (en) | 1992-02-05 |
Family
ID=14646495
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP60114780A Granted JPS61271780A (en) | 1985-05-27 | 1985-05-27 | Thin film el element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS61271780A (en) |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5991697A (en) * | 1982-11-16 | 1984-05-26 | 富士通株式会社 | Thin film el element |
-
1985
- 1985-05-27 JP JP60114780A patent/JPS61271780A/en active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5991697A (en) * | 1982-11-16 | 1984-05-26 | 富士通株式会社 | Thin film el element |
Also Published As
Publication number | Publication date |
---|---|
JPS61271780A (en) | 1986-12-02 |
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