JPS6314833B2 - - Google Patents
Info
- Publication number
- JPS6314833B2 JPS6314833B2 JP57085138A JP8513882A JPS6314833B2 JP S6314833 B2 JPS6314833 B2 JP S6314833B2 JP 57085138 A JP57085138 A JP 57085138A JP 8513882 A JP8513882 A JP 8513882A JP S6314833 B2 JPS6314833 B2 JP S6314833B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- electroluminescent
- light emitting
- semiconductor layer
- electroluminescent device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 16
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 8
- 239000005083 Zinc sulfide Substances 0.000 claims description 7
- 229910052984 zinc sulfide Inorganic materials 0.000 claims description 7
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 6
- 239000012212 insulator Substances 0.000 claims description 5
- 239000011521 glass Substances 0.000 claims description 4
- 239000011787 zinc oxide Substances 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 3
- 229910052692 Dysprosium Inorganic materials 0.000 claims description 2
- 229910052691 Erbium Inorganic materials 0.000 claims description 2
- 229910052689 Holmium Inorganic materials 0.000 claims description 2
- 229910052777 Praseodymium Inorganic materials 0.000 claims description 2
- 229910052772 Samarium Inorganic materials 0.000 claims description 2
- 229910052775 Thulium Inorganic materials 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 150000004820 halides Chemical class 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- 238000000034 method Methods 0.000 claims 1
- 229910003437 indium oxide Inorganic materials 0.000 description 4
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 4
- 229910052748 manganese Inorganic materials 0.000 description 4
- 239000011572 manganese Substances 0.000 description 4
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005401 electroluminescence Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- 239000013543 active substance Substances 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- NKZSPGSOXYXWQA-UHFFFAOYSA-N dioxido(oxo)titanium;lead(2+) Chemical compound [Pb+2].[O-][Ti]([O-])=O NKZSPGSOXYXWQA-UHFFFAOYSA-N 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- -1 manganese activated zinc sulfide Chemical class 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 description 1
Description
【発明の詳細な説明】
本発明は表示デバイスなどに用いるEL（エレク
トロルミネセンス）素子に関し、とりわけ発光輝
度の向上、および低電圧駆動を可能にする新しい
構造のEL素子に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an EL (electroluminescence) element used in display devices and the like, and particularly to an EL element with a new structure that enables improved luminance and low voltage driving.
従来EL素子には、EL発光体層の両面を絶縁体
層で挾み、さらにその外側から、酸化インジウム
や酸化すずを主体にした透明電極と、アルミニウ
ム等の金属電極で挾んだ２重絶縁層タイプと、酸
化インジウムや酸化すずを主体にした透明電極の
上にEL発光体層を直接形成し、その上に順次絶
縁体層および、金属電極を設けた１重絶縁層タイ
プとがある。これらの２つのタイプの素子におい
て、絶縁体層の合計の厚さ、および発光体層の厚
さを同一にして形成したところ、第１図に示すよ
うに、１重絶縁層タイプは、２重絶縁層タイプに
比べて、発光しきい値電圧は低いが、発光輝度お
よび発光効率も低下することが判明した。 Conventional EL devices have double insulation, in which an EL light emitter layer is sandwiched between insulator layers on both sides, and then from the outside, transparent electrodes mainly made of indium oxide or tin oxide are sandwiched between metal electrodes such as aluminum. There are two types: a layer type, and a single insulating layer type, in which an EL emitter layer is directly formed on a transparent electrode mainly made of indium oxide or tin oxide, and an insulator layer and a metal electrode are sequentially provided on top of that. When these two types of devices were formed with the same total thickness of the insulating layer and the same thickness of the light emitter layer, the single insulating layer type had the same total thickness as the light emitting layer. It was found that although the emission threshold voltage was lower than that of the insulating layer type, the emission brightness and luminous efficiency were also lower.
本発明は発光輝度および発光効率を低下させる
ことなく、発光しきい値電圧を低下させた薄膜
EL素子を提供するものである。 The present invention provides a thin film that lowers the luminescence threshold voltage without reducing luminance and luminous efficiency.
It provides an EL element.
本発明の素子構造は１重絶縁層タイプに属する
が、硫化亜鉛を主成分とするEL発光体層の一方
の面上には、酸化亜鉛を主成分とする半導体層を
設けることにより、発光輝度，および発光効率が
高く、駆動電圧が低い薄膜EL素子を再現性よく
形成できることを見い出したものである。なお半
導体層の厚さは300オングストローム以上が適当
であり、これより薄い場合、発光効率，発光輝度
が低下することがあつた。この原因としては、半
導体層を介して、EL発光体層と、半導体層がそ
の上に形成されている酸化インジウムなどの電極
とが反応し、EL発光体層の発光効率が低下した
ためと考えられる。また少なくとも半導体層およ
びEL発光体層を形成後、250℃以上，650℃以下
の温度で熱処理を行い、相互拡散層を形成するこ
とにより、再現性よく駆動電圧を低下させること
ができた。 Although the device structure of the present invention belongs to the single insulating layer type, by providing a semiconductor layer mainly composed of zinc oxide on one side of the EL luminescent layer mainly composed of zinc sulfide, the luminance can be increased. , and that it is possible to form thin film EL elements with high luminous efficiency and low driving voltage with good reproducibility. Note that the appropriate thickness of the semiconductor layer is 300 angstroms or more; if it is thinner than this, the luminous efficiency and luminance may decrease. The reason for this is thought to be that the EL emitter layer reacts with the electrode such as indium oxide on which the semiconductor layer is formed through the semiconductor layer, reducing the luminous efficiency of the EL emitter layer. . Further, after forming at least the semiconductor layer and the EL light emitter layer, heat treatment was performed at a temperature of 250°C or higher and 650°C or lower to form an interdiffusion layer, thereby making it possible to reduce the driving voltage with good reproducibility.
EL発光体層として、Mn，Cu，Ag，Al，Tb，
Dy，Er，Pr，Sm，Ho，Tm，およびこれらの
ハロゲン化物のうち、少なくとも１種以上を含む
硫化亜鉛を用いて、本発明のEL素子を構成でき
ることが判明した。 As the EL emitter layer, Mn, Cu, Ag, Al, Tb,
It has been found that the EL element of the present invention can be constructed using zinc sulfide containing at least one of Dy, Er, Pr, Sm, Ho, Tm, and halides thereof.
以下、本発明の実施例を説明する。第２図は本
発明の素子の構造の一例を示す。 Examples of the present invention will be described below. FIG. 2 shows an example of the structure of the element of the present invention.
図において１はガラス基板であり、コーニング
7059ガラスを用いた。その上に高周波スパツタリ
ング法により、0.1ミクロンの厚さの錫添加酸化
インジウムよりなる透明電極２を形成した。その
上に高周波スパツタリング法により、600オング
ストロームの厚さの酸化亜鉛から成る半導体層３
を形成した。このとき基板温度を150℃とし、ス
パツタガスとして２×10-2TorrのArを用いた。
半導体層３の上に、硫化亜鉛と活性物質であるマ
ンガンを同時蒸着し、0.8原子％のマンガンを含
む0.6ミクロンの厚さの硫化亜鉛EL発光体層４を
形成した。このとき基板温度は220℃に保ち、毎
分0.1ミクロンの蒸着速度で蒸着した。その後、
真空中で550℃，２時間の熱処理を行つた。次に
基板温度80℃で、発光体層４の上に酸化イツトリ
ウムを電子ビーム蒸着することにより、0.4ミク
ロンの厚さの絶縁体層５を形成した。最後にアル
ミニウムを真空蒸着することにより、反射電極６
を形成した。 In the figure, 1 is a glass substrate, and Corning
7059 glass was used. A transparent electrode 2 made of tin-doped indium oxide and having a thickness of 0.1 micron was formed thereon by high-frequency sputtering. On top of that, a semiconductor layer 3 made of zinc oxide with a thickness of 600 angstroms is formed by high-frequency sputtering.
was formed. At this time, the substrate temperature was set to 150° C., and Ar of 2×10 −2 Torr was used as the sputtering gas.
On the semiconductor layer 3, zinc sulfide and manganese as an active substance were co-evaporated to form a zinc sulfide EL phosphor layer 4 having a thickness of 0.6 microns and containing 0.8 atomic percent manganese. At this time, the substrate temperature was maintained at 220° C., and deposition was performed at a deposition rate of 0.1 micron per minute. after that,
Heat treatment was performed in vacuum at 550°C for 2 hours. Next, at a substrate temperature of 80.degree. C., yttrium oxide was deposited by electron beam on the light emitting layer 4, thereby forming an insulating layer 5 with a thickness of 0.4 microns. Finally, by vacuum-depositing aluminum, the reflective electrode 6
was formed.
次に、このように作製したEL素子の特性につ
いて第３図を用い説明する。図中線ａは本実施例
における素子の2KHz正弦波電圧印加時の発光輝
度を示し、同ｂは本実施例において、半導体層３
のみを形成しなかつた素子の特性を示し、同ｃは
透明電極の上に0.2ミクロンの厚さの酸化イツト
リウム，0.6ミクロンの厚さのマンガン付活硫化
亜鉛EL発光体層、および0.2ミクロンの厚さの酸
化イツトリウムを順次形成し、最後にアルミニウ
ムの反射電極を設けた従来の２重絶縁層構造の
EL素子の特性を示す。第３図からわかるように、
本発明の素子は、発光輝度を低下させることな
く、駆動電圧のみを低下させることが可能であ
り、駆動回路の低電圧化を可能にするものであ
る。 Next, the characteristics of the EL element manufactured in this way will be explained using FIG. 3. Line a in the figure shows the luminance of the device in this example when a 2KHz sine wave voltage is applied, and line b shows the luminance of the semiconductor layer 3 in this example.
This shows the characteristics of a device that does not form a 0.2 micron thick yttrium oxide layer, a 0.6 micron thick manganese activated zinc sulfide EL phosphor layer, and a 0.2 micron thick yttrium oxide layer on top of a transparent electrode. The conventional double insulating layer structure consists of sequentially forming yttrium oxide and finally providing an aluminum reflective electrode.
Shows the characteristics of EL elements. As can be seen from Figure 3,
The element of the present invention allows only the driving voltage to be lowered without lowering the luminance of light emission, and enables the voltage of the driving circuit to be lowered.
さらに安定性，低電圧化に関する研究の結果、
絶縁体層として0.5〜３ミクロンの厚さの、チタ
ン酸ストロンチウム，チタン酸バリウム，チタン
酸鉛などの誘電率，絶縁耐圧の大きい薄膜を用い
ることにより、安定性が優れた低電圧で駆動可能
なEL素子が形成できることが判つた。 Furthermore, as a result of research on stability and lower voltage,
By using a 0.5 to 3 micron thick thin film of strontium titanate, barium titanate, lead titanate, etc., as the insulator layer, which has a high dielectric constant and dielectric strength voltage, it can be driven at low voltage with excellent stability. It was found that an EL element could be formed.
以上説明したように、本発明の素子において
は、発光輝度，効率が高く、従来の２重絶縁層タ
イプのEL素子に比べて低電圧駆動が可能なEL素
子を実現できるものであるが、この原因として
は、EL発光体層への電子の注入機構が、従来の
２重絶縁層タイプの素子を異なるためと考えられ
る。 As explained above, the device of the present invention can realize an EL device that has high luminance and efficiency and can be driven at a lower voltage than the conventional double insulating layer type EL device. The reason is thought to be that the mechanism for injecting electrons into the EL light emitting layer is different from that of conventional double insulating layer type elements.
本発明の素子は、マトリツクス状に電極を配置
することにより、フラツト表示パネルとして応用
可能であり、実用価値は高い。 The device of the present invention can be applied as a flat display panel by arranging electrodes in a matrix, and has high practical value.
第１図は従来の１重絶縁層タイプ，および２重
絶縁層タイプのEL（エレクトロルミネセンス）素
子の電圧―輝度特性を示す図、第２図は本発明に
よるEL素子の構造の一例を示す断面図、第３図
は本発明によるEL素子および従来のEL素子の電
圧―輝度特性を示す図である。
１……ガラス基板、２……透明電極、３……半
導体層、４……EL発光体層、５……絶縁体層、
６……反射電極。
Fig. 1 is a diagram showing the voltage-luminance characteristics of conventional single insulating layer type and double insulating layer type EL (electroluminescence) elements, and Fig. 2 is an example of the structure of the EL element according to the present invention. The cross-sectional view and FIG. 3 are diagrams showing voltage-luminance characteristics of an EL device according to the present invention and a conventional EL device. DESCRIPTION OF SYMBOLS 1...Glass substrate, 2...Transparent electrode, 3...Semiconductor layer, 4...EL luminescent layer, 5...Insulator layer,
6...Reflecting electrode.
Claims (1)
ンス発光体層、上記エレクトロルミネセンス発光
体層の一方の面上に設けられた酸化亜鉛を主成分
とする半導体層、上記発光体層の他方の面上に設
けられた絶縁体層、上記半導体層および上記絶縁
体層を介して上記エレクトロルミネセンス発光体
層に交流電圧を印加する手段を備えて成ることを
特徴とするエレクトロルミネセンス素子。 ２ ガラス基板上に形成された透明電極上に、半
導体層，エレクトロルミネセンス発光体層，絶縁
体層および電極を順次積層したことを特徴とする
特許請求の範囲第１項記載のエレクトロルミネセ
ンス素子。 ３ エレクトロルミネセンス発光体層がMn，
Cu，Ag，Al，Tb，Dy，Er，Pr，Sm，Ho，
Tm，およびこれらのハロゲン化物からなるグル
ープのなかから選ばれた少なくとも１種を含む硫
化亜鉛から成ることを特徴とする特許請求の範囲
第１項または第２項記載のエレクトロルミネセン
ス素子。 ４ 半導体層の厚さが300オングストローム以上
であることを特徴とする特許請求の範囲第１項ま
たは第２項記載のエレクトロルミネセンス素子。 ５ 酸化亜鉛を主成分とする半導体層、硫化亜鉛
を主成分とするエレクトロルミネセンス発光体
層、および絶縁体層の各層をこの順序に隣り合う
ようにして形成するとともに、上記半導体層と上
記発光体層の形成後250℃以上650℃以下の温度で
熱処理を行い、上記半導体層と上記発光体層間に
相互拡散層を形成することを特徴とするエレクト
ロルミネセンス素子の製造方法。[Scope of Claims] 1. An electroluminescent light emitting layer containing zinc sulfide as a main component, a semiconductor layer containing zinc oxide as a main component provided on one surface of the electroluminescent light emitting layer, and the above light emitting material. An electroluminescent device comprising an insulating layer provided on the other surface of the layer, and means for applying an alternating current voltage to the electroluminescent layer via the semiconductor layer and the insulating layer. sense element. 2. The electroluminescent device according to claim 1, characterized in that a semiconductor layer, an electroluminescent layer, an insulator layer, and an electrode are sequentially laminated on a transparent electrode formed on a glass substrate. . 3 The electroluminescent emitter layer is Mn,
Cu, Ag, Al, Tb, Dy, Er, Pr, Sm, Ho,
3. The electroluminescent device according to claim 1, wherein the electroluminescent device is made of zinc sulfide containing at least one member selected from the group consisting of Tm and halides thereof. 4. The electroluminescent device according to claim 1 or 2, wherein the semiconductor layer has a thickness of 300 angstroms or more. 5. A semiconductor layer containing zinc oxide as a main component, an electroluminescent light emitting layer containing zinc sulfide as a main component, and an insulating layer are formed adjacent to each other in this order, and the semiconductor layer and the light emitting layer are formed adjacent to each other in this order. 1. A method for manufacturing an electroluminescent device, comprising performing heat treatment at a temperature of 250° C. or more and 650° C. or less after forming the body layer to form an interdiffusion layer between the semiconductor layer and the light emitting layer.
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57085138A JPS58201294A (en) | 1982-05-19 | 1982-05-19 | Electroluminescent element and method of producing same |
| EP83901614A EP0111566B1 (en) | 1982-05-19 | 1983-05-18 | Electroluminescent display unit |
| DE8383901614T DE3371578D1 (en) | 1982-05-19 | 1983-05-18 | Electroluminescent display unit |
| PCT/JP1983/000146 WO1983004123A1 (en) | 1982-05-19 | 1983-05-18 | Electroluminescent display unit |
| US06/572,415 US4634934A (en) | 1982-05-19 | 1983-05-18 | Electroluminescent display device |
| US07/140,867 US4814668A (en) | 1982-05-19 | 1987-12-23 | Electroluminescent display device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57085138A JPS58201294A (en) | 1982-05-19 | 1982-05-19 | Electroluminescent element and method of producing same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58201294A JPS58201294A (en) | 1983-11-24 |
| JPS6314833B2 true JPS6314833B2 (en) | 1988-04-01 |
Family
ID=13850290
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57085138A Granted JPS58201294A (en) | 1982-05-19 | 1982-05-19 | Electroluminescent element and method of producing same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58201294A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62218474A (en) * | 1986-03-19 | 1987-09-25 | Futaba Corp | Thin-film electroluminescence element |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4946692A (en) * | 1972-09-08 | 1974-05-04 | ||
| JPS5384497A (en) * | 1976-12-29 | 1978-07-25 | Omron Tateisi Electronics Co | Manufacture of el element |
-
1982
- 1982-05-19 JP JP57085138A patent/JPS58201294A/en active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4946692A (en) * | 1972-09-08 | 1974-05-04 | ||
| JPS5384497A (en) * | 1976-12-29 | 1978-07-25 | Omron Tateisi Electronics Co | Manufacture of el element |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58201294A (en) | 1983-11-24 |
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