JPH01146290A - Thin film el element - Google Patents
Thin film el elementInfo
- Publication number
- JPH01146290A JPH01146290A JP62306605A JP30660587A JPH01146290A JP H01146290 A JPH01146290 A JP H01146290A JP 62306605 A JP62306605 A JP 62306605A JP 30660587 A JP30660587 A JP 30660587A JP H01146290 A JPH01146290 A JP H01146290A
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- diffusion
- layer
- emitting layer
- insulating layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims description 22
- 238000009792 diffusion process Methods 0.000 claims abstract description 28
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 239000010408 film Substances 0.000 claims description 22
- 230000002265 prevention Effects 0.000 claims description 9
- NKZSPGSOXYXWQA-UHFFFAOYSA-N dioxido(oxo)titanium;lead(2+) Chemical compound [Pb+2].[O-][Ti]([O-])=O NKZSPGSOXYXWQA-UHFFFAOYSA-N 0.000 abstract description 11
- 238000010438 heat treatment Methods 0.000 abstract description 8
- 238000009413 insulation Methods 0.000 abstract description 6
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 abstract description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 1
- 229910052593 corundum Inorganic materials 0.000 abstract 1
- 238000009377 nuclear transmutation Methods 0.000 abstract 1
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract 1
- 239000000470 constituent Substances 0.000 description 7
- 239000013078 crystal Substances 0.000 description 5
- 229910003781 PbTiO3 Inorganic materials 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000011572 manganese Substances 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 2
- 239000005083 Zinc sulfide Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910002113 barium titanate Inorganic materials 0.000 description 2
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 229910052748 manganese Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 229910052984 zinc sulfide Inorganic materials 0.000 description 2
- 229910020776 SixNy Inorganic materials 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔概 要〕
フラットデイスプレィパネル、或いは面光源等に用いら
れる薄膜ＥＬ素子に関し、
ＥＬ発光層上に高誘電率な第二絶縁層を形成する際の、
熱処理時における相互の層構成成分の熱拡散を防止して
、素子の発光輝度及び絶縁耐圧を向上させることを目的
とし、
透明電極が配設された透明基板−ヒに、高誘電率の第一
絶縁層を介してＥＬ発光層、高誘電率の第二絶縁層及び
背面電極が順に積層配設された素子構成において、前記
ＥＬ発光層と第二絶縁層との間に、該ＥＬ発光層と第二
絶縁層の構成成分の相互拡散を防止する拡散防止膜を設
けた構成とする。[Detailed Description of the Invention] [Summary] Regarding a thin film EL element used for a flat display panel or a surface light source, etc., when forming a high dielectric constant second insulating layer on an EL light emitting layer,
In order to prevent thermal diffusion between mutual layer constituents during heat treatment and improve the luminance brightness and dielectric strength of the device, we used a transparent substrate with a high dielectric constant on which a transparent electrode was disposed. In a device configuration in which an EL light emitting layer, a high dielectric constant second insulating layer, and a back electrode are laminated in this order through an insulating layer, the EL light emitting layer and The structure includes a diffusion prevention film that prevents mutual diffusion of constituent components of the second insulating layer.
本発明はフラットデイスプレィパネル、或いは面光源等
に用いられる薄膜ＥＬ素子に係り、特に発光輝度と絶縁
耐圧の向上を図った薄膜ＥＬ素子の構造に関するもので
ある。The present invention relates to a thin film EL device used in a flat display panel or a surface light source, and more particularly to a structure of a thin film EL device with improved luminance and dielectric strength.
薄膜ＥＬ素子は薄形にでき、固体化により堅牢であり、
かつ軽量、高輝度発光が可能であることから情報、通信
端末の表示装置、発光素子などとして期待されている
このような薄膜ＥＬ素子では低電圧駆動を可能にするた
めにＥＬ発光層の上下面を高誘電率な例えばチタン酸鉛
（ＰｂＴｉＯｚ）からなる絶縁層で被覆した交流駆動タ
イプのものが実用化されていが、該ＥＬ発光層上にかか
る絶縁層を形成する際にそれら相互の層構成成分の拡散
により発光輝度及び絶縁耐圧が低下する傾向がある。こ
のため、そのような相互拡散を防止して発光輝度及び絶
縁耐圧の向トが実現できる素子構造が必要とされている
。Thin-film EL elements can be made thin and solid, making them more robust.
Thin-film EL devices are expected to be used as display devices and light-emitting elements for information and communication terminals because they are lightweight and capable of emitting high-intensity light. An AC-driven type that is coated with an insulating layer made of high dielectric constant, e.g. lead titanate (PbTiOz), has been put into practical use, but when forming the insulating layer on the EL emitting layer, the mutual layer structure must be changed. Emission brightness and dielectric strength voltage tend to decrease due to diffusion of components. Therefore, there is a need for an element structure that can prevent such mutual diffusion and improve luminance and dielectric strength.
従来の薄膜ＥＬ素子の構造は第４図に示すように、例え
ば酸化インジウム・錫（Ｉｎｄｉｕｍ Ｔｉｎ ０ｘｉ
−ｄｅ：以下ＩＴＯと略称する）からなるストライプ状
の透明電極１２が配設された透明ガラス基板１１上に、
高誘電率の例えばチタン酸鉛（ＰｂＴｉＯｉ）からなる
第一絶縁層１３を介して発光中心となるマンガン（Ｍｎ
）等を添加した硫化亜鉛（ＺｎＳ）からなるＥＬ発光層
１４が積層され、その発光層１４上に更に高誘電率のチ
タン酸鉛（ＰｂＴｉＯｚ）からなる第二絶縁層１５を介
してアルミニウム（八１）などからなるストライプ状の
背面電極１６が、前記透明電極１２と交差するようにマ
トリックス状に配設された構造とされている。As shown in FIG. 4, the structure of a conventional thin film EL element is made of, for example, indium tin oxide (Indium Tin Oxide).
-de: hereinafter abbreviated as ITO) on a transparent glass substrate 11 on which a striped transparent electrode 12 is disposed,
Manganese (Mn
), etc., is laminated, and a second insulating layer 15 made of lead titanate (PbTiOz) with a high dielectric constant is interposed on the emissive layer 14, and aluminum The structure is such that striped back electrodes 16 made of materials such as 1) are arranged in a matrix so as to intersect with the transparent electrodes 12.
そしてかかるＥＬ素子の前記各電極１２．１６との任意
の選択された電極に所定の駆動電圧を印加し、前記ＥＬ
発光層１４に交流電界をかけることにより、該ＥＬ発光
層１４を部分的に高輝度発光させることを可能としてい
る。Then, a predetermined drive voltage is applied to any selected electrode between the electrodes 12 and 16 of the EL element, and the EL element is
By applying an alternating current electric field to the light emitting layer 14, it is possible to cause the EL light emitting layer 14 to partially emit light with high brightness.
ところで上記したような従来構造の薄膜ＥＬ素子では、
低電圧駆動を可能とするために第一、第二絶縁層１３．
１５として高誘電率なチタン酸鉛（Ｐｂ−Ｔｉ０．１）
膜が用いられ、またこのようなＰｂＴｉ０＋膜は比較的
低い温度で形成するために、基板温度条件を室温とした
スパッタリング法により先ずアモルファス状のＰｂＴｉ
０ｉ膜を形成した後、このａ−ＰｂＴｉ０３膜を真空中
、５００°Ｃ程度で熱処理することによってペロブスカ
イト結晶構造の高誘電率なＰｂＴｉＯ３膜としている。By the way, in the thin film EL element with the conventional structure as described above,
First and second insulating layers 13. to enable low voltage driving.
15 is high dielectric constant lead titanate (Pb-Ti0.1)
In addition, since such a PbTi0+ film is formed at a relatively low temperature, an amorphous PbTi0+ film is first formed using a sputtering method with the substrate temperature condition at room temperature.
After forming the Oi film, this a-PbTiO3 film is heat-treated in a vacuum at about 500°C to form a PbTiO3 film with a perovskite crystal structure and a high dielectric constant.
しかし、このような方法でＥＬ発光層１４上に高誘電率
なＰｂＴｉＯ３からなる第二絶縁層１５を形成する場合
、ａ−ＰｂＴｉ０３膜を高誘電率なペロブスカイト結晶
構造のＰｂＴｉ０＋膜とするための熱処理時に、そのＰ
ｂＴｉ０ｚ膜中の鉛（Ｐｂ）が前記ＥＬ発光層１４へ熱
拡散して当該ＥＬ素子の発光輝度を低下させるという欠
点があった。また第二絶縁層１５とＥＬ発光層１４との
相互の層構成成分の熱拡散による変質や熱膨腸係数差等
により、その界面にクランク、或いは剥離が生じ、絶縁
耐圧が低下する問題もあった。However, when forming the second insulating layer 15 made of PbTiO3 with a high dielectric constant on the EL light emitting layer 14 by such a method, heat treatment is required to convert the a-PbTi03 film into a PbTi0+ film with a high dielectric constant perovskite crystal structure. Sometimes that P
There was a drawback that lead (Pb) in the bTi0z film thermally diffused into the EL light emitting layer 14, reducing the luminance of the EL element. Furthermore, there is also the problem that cracking or peeling occurs at the interface due to alteration due to thermal diffusion of mutual layer constituent components of the second insulating layer 15 and the EL light emitting layer 14, or differences in thermal expansion coefficients, resulting in a decrease in dielectric strength voltage. Ta.
本発明は上記した従来の実状に鑑み、ＥＬ発光層上に高
誘電率な第二絶縁層を形成する際の、熱処理時の相互の
層構成成分の熱拡散を防止して、発光輝度及び絶縁耐圧
を向上させた素子構造を提供することを目的とするもの
である。In view of the above-mentioned conventional situation, the present invention prevents thermal diffusion of mutual layer constituents during heat treatment when forming a high dielectric constant second insulating layer on an EL light emitting layer, thereby improving luminance and insulation. The object is to provide an element structure with improved breakdown voltage.
本発明は上記した目的を達成するため、ＩＴＯからなる
透明電極が配設された透明基板上に、高誘電率な例えば
チタン酸鉛からなる第一絶縁層を介してＥＬ発光層、チ
タン酸鉛からなる第二絶縁層及びＡ１等からなる背面電
極が順に積層配設された素子構成において、前記ＥＬ発
光層と第二絶縁層との間に、該ＥＬ発光層と第二絶縁層
の構成成分の相互拡散を防止する例えばへ２□０１等か
らなる拡散防止膜を設けた構成とする。In order to achieve the above-mentioned object, the present invention provides an EL light emitting layer, a lead titanate layer, a lead titanate layer, a first insulating layer having a high dielectric constant, for example, lead titanate, on a transparent substrate on which a transparent electrode made of ITO is disposed. In an element configuration in which a second insulating layer made of A1 and a back electrode made of A1 etc. are laminated in order, the constituent components of the EL light emitting layer and the second insulating layer are placed between the EL light emitting layer and the second insulating layer. The configuration is such that a diffusion prevention film made of, for example, He2□01 is provided to prevent mutual diffusion of.
本発明の素子構成では、ＥＬ発光層上にへ２２０３等か
らなる拡散防止膜を介して高誘電率な例えばチタン酸鉛
からなる第一絶縁層を設けた構成としているため、該拡
散防止膜により前記第一絶縁層を形成する際の、熱処理
時での相互の層構成成分の熱拡散が防止される。その結
果熱拡散による界面での変質や欠陥が解消され、当該Ｅ
Ｌ素子の発光輝度及び絶縁耐圧特性が向−トする。In the device configuration of the present invention, the first insulating layer made of a high dielectric constant, for example, lead titanate, is provided on the EL light emitting layer via the diffusion prevention film made of 2203 or the like. This prevents mutual thermal diffusion of layer constituents during heat treatment when forming the first insulating layer. As a result, deterioration and defects at the interface due to thermal diffusion are eliminated, and the E
The light emission brightness and dielectric strength characteristics of the L element are improved.
以下図面を用いて本発明の実施例について詳細に説明す
る。Embodiments of the present invention will be described in detail below with reference to the drawings.
第１図は本発明に係る薄膜ＥＬ素子の一実施例を示す要
部断面図であり、前記第４図と同等部分には同一符号を
付した。FIG. 1 is a sectional view of essential parts showing an embodiment of a thin film EL element according to the present invention, and the same parts as in FIG. 4 are given the same reference numerals.
図において、第１図の実施例が第４図の従来の素子構造
と異なる点は、発光中心となるマンガン（Ｍｎ）等を添
加した硫化亜鉛（ＺｎＳ）からなるＥＬ発光層１４と高
誘電率な、例えばペロブスカイト結晶構造のＰｂＴｉ０
：＋ （同様なチタン酸バリウム： ＢａＴｉ０ｉを用
いてもよい）からなる第二絶縁層１５との間に、スパッ
タリング法により形成されるＡ ｊ！ ２０３ ＋ Ｓ
ｓ Ｏ□、或いはＳｉｘＮｙ等からなる拡散防止膜２
１を介在した素子構造としたことである。In the figure, the difference between the embodiment shown in FIG. 1 and the conventional device structure shown in FIG. For example, PbTi0 with perovskite crystal structure
:+ A j! formed by a sputtering method between the second insulating layer 15 made of barium titanate (similar barium titanate: BaTi0i may also be used). 203 + S
Diffusion prevention film 2 made of sO□, SixNy, etc.
This is because the device structure has an element structure in which 1 is interposed.
このような素子構造とすることにより、前記ＥＬ発光層
上に高誘電率な第二絶縁層を形成する際の、熱処理時に
おける膜相互の構成成分の熱拡散が拡散防止膜２１の介
在により防止され、該熱拡散による界面での変質やクラ
ック、剥離等の欠陥の発生が解消され、当該ＥＬ素子の
発光輝度及び絶縁耐圧特性を向上させることが可能とな
る。With such an element structure, the interposition of the diffusion prevention film 21 prevents thermal diffusion of constituent components between the films during heat treatment when forming a second insulating layer with a high dielectric constant on the EL light emitting layer. This eliminates the occurrence of defects such as deterioration, cracking, and peeling at the interface due to the thermal diffusion, making it possible to improve the luminance and dielectric strength characteristics of the EL element.
第２図は本発明及び従来の薄膜ＥＬ素子の印加電圧と発
光輝度との関係を比較して示した図であり、この図によ
って明らかなようにＡで示す本実施例による薄膜ＥＬ素
子の発光輝度は、Ｂで示す従来の薄膜ＥＬ素子の発光輝
度と比較して顕著に向−ヒしていることが判る。FIG. 2 is a diagram comparing the relationship between the applied voltage and luminance of the thin film EL device of the present invention and the conventional thin film EL device. It can be seen that the luminance is significantly improved compared to the luminance of the conventional thin film EL element shown in B.
また、第３図は本発明及び従来の薄膜ＥＬ素子の絶縁耐
圧と絶縁破壊数との関係を比較して示した図であり、こ
の図によって明らかなようにＣで示す本実施例による薄
膜ＥＬ素子の絶縁耐圧は、Ｄで示すように５０〜２５０
■に分布する従来の薄膜ＥＬ素子の絶縁耐圧と比較して
２００〜３００■に分布しており、格段に向上している
ことが確認できると共に、前記拡散防止膜２１を適用し
た作用効果の大きいことか判る。Furthermore, FIG. 3 is a diagram comparing the relationship between the dielectric strength voltage and the number of dielectric breakdowns of the present invention and the conventional thin film EL device. The dielectric strength voltage of the element is 50 to 250 as shown by D.
Compared to the dielectric strength voltage of a conventional thin film EL element, which is distributed in the range of 200 to 300, it can be confirmed that this is a marked improvement, and the effect of applying the diffusion prevention film 21 is large. I understand that.
次にこのような本発明の薄膜ＥＬ素子を製作するには、
例えばＩＴＯ等からなるストライプ状の透明電極１２が
配設された透明ガラス基板１１上に、基板温度条件を室
温としたスパッタリング法等によりアモルファスチタン
酸鉛（ａ−ＰｂＴｉＯｓ）膜を２５００人の膜厚に被着
し、引き続き真空中で５００″Ｃ程度の熱処理を行って
ペロブスカイト結晶構造の高誘電率な第−絶りｔ層１３
を形成する。Next, in order to manufacture such a thin film EL element of the present invention,
For example, on a transparent glass substrate 11 on which a striped transparent electrode 12 made of ITO or the like is disposed, an amorphous lead titanate (a-PbTiOs) film is deposited to a thickness of 2,500 yen by sputtering or the like with the substrate temperature condition at room temperature. The T-th layer 13 having a high dielectric constant and a perovskite crystal structure is formed by applying heat treatment at about 500''C in a vacuum.
form.
次に該第−絶縁層１３上に真空蒸着法等によって発光中
心となる例えばマンガン（Ｍｎ）をドープした硫化亜鉛
（ＺｎＳ）からなるＥＬ発光層１４を、例えば５０００
人の膜厚に被着形成した後、その表面にスパッタリング
法により例えば＾Ｉ！、２０３等からなる拡散防止膜２
１を５００人の膜厚に被着し、更にその表面に基板温度
条件を室温としたスパッタリング法等ニヨリ３０００人
の膜厚のアモルファスチタン酸鉛（ａ−ＰｂＴｉＯ：＋
）膜を被着し、その膜を引き続き真空中・５００°Ｃ程
度で熱処理を行ってペロブスカイト結晶構造の高誘電率
の第二絶縁層１５を形成する。Next, an EL light emitting layer 14 made of zinc sulfide (ZnS) doped with, for example, manganese (Mn), which serves as a luminescent center, is deposited on the first insulating layer 13 by vacuum evaporation or the like.
After forming a film to a thickness of about 100 mm, for example, ^I! is deposited on the surface by sputtering. , 203, etc.
Amorphous lead titanate (a-PbTiO: +
) A film is deposited, and the film is subsequently heat-treated in a vacuum at about 500° C. to form a second insulating layer 15 having a perovskite crystal structure and having a high dielectric constant.
その後、該第二絶縁層１５上にアルミニウム（Ａ ｊ２
）などからなるストライプ状の背面電極１６を、前記
透明電極１２と交差するようにマトリックス状に被着形
成することにより、上記したように発光輝度及び絶縁耐
圧の良好な薄膜ＥＬ素子が得られる。After that, aluminum (A j2
By forming striped back electrodes 16 made of a material such as ) in a matrix pattern so as to intersect with the transparent electrodes 12, a thin film EL element with good luminance and dielectric strength can be obtained as described above.
〔発明の効果）
以上の説明から明らかなように、本発明に係る薄膜ＥＬ
素子によれば、ＥＬ発光層と第二絶縁層との間に拡散防
止膜を介在させた構成とすることにより、該ＥＬ発光層
と第二絶縁層との界面での相互拡散現象が排除され、か
つ欠陥発生も解消されるので、発光輝度及び絶縁耐圧特
性が著しく向ヒする利点を有し、実用上価れた効果を奏
する。[Effects of the Invention] As is clear from the above explanation, the thin film EL according to the present invention
According to the device, by having a structure in which a diffusion prevention film is interposed between the EL light emitting layer and the second insulating layer, mutual diffusion phenomenon at the interface between the EL light emitting layer and the second insulating layer is eliminated. Moreover, since the occurrence of defects is also eliminated, it has the advantage that the luminance of light emission and the dielectric strength characteristics are significantly improved, and this has an advantageous effect in practical use.
第１図は本発明に係る薄膜ＥＬ素子の一実施例を示す要
部断面図、
第２図は本発明に係る薄膜ＥＬ素子と従来例の発光輝度
を比較説明するための図、
第３図は本発明に係る薄膜ＥＬ素子と従来例の絶縁耐圧
を比較説明するための図、
第４図は従来の薄膜ＥＬ素子の一例を示す要部断面図で
ある。
第１図において、
１１は透明ガラス基板、１２は透明電極、１３は第一絶
縁層、１４はＥＬ発光層、１５は第二絶縁層、１６は背
面電極、２１は拡散層防止膜をそれぞれ示す。
第１図
一→印ＩＪＤ儂斤（Ｖ）
ｆｌ＆！＋ｔｓＩｆ：ＭｔｔａＲｔｓ ｍ第２図FIG. 1 is a sectional view of essential parts showing an embodiment of a thin film EL element according to the present invention, FIG. 2 is a diagram for comparing and explaining the luminance of the thin film EL element according to the present invention and a conventional example, and FIG. 4 is a diagram for comparing and explaining the dielectric breakdown voltage of the thin film EL device according to the present invention and a conventional example, and FIG. 4 is a sectional view of a main part showing an example of a conventional thin film EL device. In FIG. 1, 11 is a transparent glass substrate, 12 is a transparent electrode, 13 is a first insulating layer, 14 is an EL emitting layer, 15 is a second insulating layer, 16 is a back electrode, and 21 is a diffusion layer prevention film. . Figure 1 1 → Mark IJD 儂斤 (V) fl&! +tsIf:MttaRts mFigure 2
Claims (1)
、高誘電率の第一絶縁層（１３）を介してＥＬ発光層（
１４）、高誘電率の第二絶縁層（１５）及び背面電極（
１６）が順に積層配設された素子構成において、 上記ＥＬ発光層（１４）と第二絶縁層（１５）との間
に、該ＥＬ発光層（１４）と第二絶縁層（１５）の構成
成分の相互拡散を防止する拡散防止膜（２１）を設けて
なることを特徴とする薄膜ＥＬ素子。[Claims] On a transparent substrate (11) on which a transparent electrode (12) is disposed, an EL light emitting layer (
14), a high dielectric constant second insulating layer (15) and a back electrode (
16) are arranged in a stacked manner in order, between the EL light emitting layer (14) and the second insulating layer (15), the configuration of the EL light emitting layer (14) and the second insulating layer (15) is provided. A thin film EL device characterized by being provided with a diffusion prevention film (21) for preventing mutual diffusion of components.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62306605A JPH01146290A (en) | 1987-12-02 | 1987-12-02 | Thin film el element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62306605A JPH01146290A (en) | 1987-12-02 | 1987-12-02 | Thin film el element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01146290A true JPH01146290A (en) | 1989-06-08 |
Family
ID=17959086
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62306605A Pending JPH01146290A (en) | 1987-12-02 | 1987-12-02 | Thin film el element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01146290A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6529245B2 (en) | 1997-09-03 | 2003-03-04 | Hitachi, Ltd. | Display device also compatible with digital broadcasts |
-
1987
- 1987-12-02 JP JP62306605A patent/JPH01146290A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6529245B2 (en) | 1997-09-03 | 2003-03-04 | Hitachi, Ltd. | Display device also compatible with digital broadcasts |
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