JPH03236195A - Double-insulated thin film electroluminescence device - Google Patents
Double-insulated thin film electroluminescence deviceInfo
- Publication number
- JPH03236195A JPH03236195A JP2033269A JP3326990A JPH03236195A JP H03236195 A JPH03236195 A JP H03236195A JP 2033269 A JP2033269 A JP 2033269A JP 3326990 A JP3326990 A JP 3326990A JP H03236195 A JPH03236195 A JP H03236195A
- Authority
- JP
- Japan
- Prior art keywords
- dielectric layer
- dielectric
- thin film
- double
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 19
- 238000005401 electroluminescence Methods 0.000 title description 5
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims abstract description 18
- 238000001771 vacuum deposition Methods 0.000 claims abstract 2
- 238000004544 sputter deposition Methods 0.000 claims description 12
- 230000002265 prevention Effects 0.000 claims description 10
- 229910052739 hydrogen Inorganic materials 0.000 abstract description 10
- 239000001257 hydrogen Substances 0.000 abstract description 10
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract description 9
- 239000000758 substrate Substances 0.000 abstract description 8
- 238000000034 method Methods 0.000 abstract description 7
- 239000011521 glass Substances 0.000 abstract description 6
- 239000011248 coating agent Substances 0.000 abstract description 2
- 238000000576 coating method Methods 0.000 abstract description 2
- 238000009825 accumulation Methods 0.000 abstract 1
- 238000006722 reduction reaction Methods 0.000 description 18
- 239000010408 film Substances 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 7
- 238000000137 annealing Methods 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- 230000015556 catabolic process Effects 0.000 description 5
- 239000005083 Zinc sulfide Substances 0.000 description 4
- 239000011572 manganese Substances 0.000 description 4
- 229910052984 zinc sulfide Inorganic materials 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 238000004020 luminiscence type Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 229910052748 manganese Inorganic materials 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- -1 manganese (Mn) Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Electroluminescent Light Sources (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は２重絶縁薄膜エレクトロルミネセンス装置に関
し、特に、素子の絶縁耐圧を高めるための誘電体領域の
構造に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to double-insulated thin film electroluminescent devices, and more particularly to the structure of dielectric regions to increase the dielectric strength of the device.
（従来の技術〕
交流電界の印加によりエレクトロルミネセンス（ＥＬ）
現象を呈する薄膜エレクトロルミネセンス素子は、高輝
度発光、高解像度及び大表示容量であることから、薄型
表示装置用のパネルとして注目されている。(Conventional technology) Electroluminescence (EL) is produced by applying an alternating current electric field.
Thin film electroluminescent devices exhibiting this phenomenon are attracting attention as panels for thin display devices because of their high brightness, high resolution, and large display capacity.
従来の薄膜エレクトロルミネセンス素子としては、高輝
度、長寿命を期すために、高耐圧化を図った２重絶縁薄
膜ＥＬ素子が開発されている。この２重絶縁薄膜ＥＬ素
子は、例えば、第３図に示すような構造となっている。As conventional thin film electroluminescent elements, double insulated thin film EL elements with high breakdown voltage have been developed in order to achieve high brightness and long life. This double insulation thin film EL element has a structure as shown in FIG. 3, for example.
すなわち、ガラス基板１２の上にＩＴＯからなる透明電
極１４、第１誘電体層１６、硫化亜鉛（ＺｎＳ）などに
マンガン（Ｍｎ）などの発光中心となる遷移金属や希土
類を添加して形成した発光層１８、第２誘電体層２０、
背面電極２２が順次積層された構造である。That is, a transparent electrode 14 made of ITO on a glass substrate 12, a first dielectric layer 16, and a light emitting layer formed by adding a transition metal or rare earth element such as manganese (Mn), which is the center of luminescence, to zinc sulfide (ZnS) or the like. layer 18, second dielectric layer 20,
It has a structure in which back electrodes 22 are sequentially laminated.
ここで、透明電極１４と背面電極２２の間に交流電圧２
４を印加すると、電界で加速された電子の衝突に基づく
発光中心のイオン化と再結合の繰り返し過程によって発
光が生じ、この光がガラス基板１側に放出される。Here, an AC voltage 2 is applied between the transparent electrode 14 and the back electrode 22.
When 4 is applied, light is generated by the repeated process of ionization and recombination of luminescent centers based on collisions of electrons accelerated by the electric field, and this light is emitted to the glass substrate 1 side.
この場合に、第１誘電体層１６及び第２誘電体Ｊｉ２０
としては、絶縁耐圧、誘電率、発光特性上の観点から、
ＳｉＯ□、Ｓ ｉｉ Ｎａ 、Ａｌｚ Ｏｚなどが用い
られている。In this case, the first dielectric layer 16 and the second dielectric layer Ji20
From the viewpoint of dielectric strength, dielectric constant, and luminescence characteristics,
SiO□, S ii Na, Alz Oz, etc. are used.
〔発明が解決しようとする課題］
従来、第１誘電体層１６はスパッタリング法により形成
されていたが、このスパッタリング法による成膜には段
差被覆性が悪いという欠点があり、透明電極１４やガラ
ス基板１２上の段差部や凹凸の上に第１誘電体層１６を
形成した場合、これら段差部や凹凸の部分にて絶縁破壊
が発生し、素子の歩留りが低下するという問題点があっ
た。また、スパッタリング法においては、成膜速度が小
さく、高真空を必要とすることなどが製造コストを引き
上げる要因きなっていた。[Problems to be Solved by the Invention] Conventionally, the first dielectric layer 16 has been formed by a sputtering method, but film formation by this sputtering method has the disadvantage of poor step coverage, When the first dielectric layer 16 is formed on the stepped portions or uneven portions of the substrate 12, there is a problem in that dielectric breakdown occurs at these stepped portions or uneven portions, reducing the yield of the device. Further, in the sputtering method, the film formation rate is low and high vacuum is required, which are factors that increase manufacturing costs.
一方、プラズマＣＶＤ法は成膜の段差被覆性が良好であ
り、成膜速度も速いことから、第１誘電体層１６のプラ
ズマＣＶＤ法による形成も検討された。ところが、第１
誘電体層１６にプラズマＣＶＤ法により形成した誘電体
層を用いた場合、層内にはＣＶＤ反応時に混入した水素
が数％程度含まれており、後に行なわれる発光層１８の
アニル熱処理において、その水素が放出され、隣接する
透明電極１４（ＩＴＯ（Ｉｎｚ ０３ ＋５ｎＯｚ）を
還元してしまう。還元された透明電極は黒化変質し、抵
抗率も増大する。このことは、素子の発光輝度を低下さ
せると共に、素子の絶縁耐圧を低下させる。したがって
、第１誘電体層１６の形成には、プラズマＣＶＤ法を用
いることはできなかった。On the other hand, since the plasma CVD method provides good step coverage in film formation and has a fast film formation speed, formation of the first dielectric layer 16 by the plasma CVD method has also been considered. However, the first
When a dielectric layer formed by the plasma CVD method is used as the dielectric layer 16, the layer contains about several percent of hydrogen mixed in during the CVD reaction, and in the annealing heat treatment of the light emitting layer 18 performed later, the hydrogen is removed. Hydrogen is released and reduces the adjacent transparent electrode 14 (ITO (Inz 03 +5nOz). The reduced transparent electrode turns black and its resistivity increases. This reduces the luminance of the device. At the same time, the dielectric breakdown voltage of the element is lowered.Therefore, the plasma CVD method could not be used to form the first dielectric layer 16.
そこで、本発明は上記問題点を解決するものであり、そ
の課題は、プラズマＣＶＤ法による誘電体層から透明電
極への水素の移動を遮断することにより、透明電極の変
質を防止すると共にプラズマＣＶＤ法の良好な被覆性、
高い堆積速度を利用して、絶縁耐圧が高く、歩留りの良
好な２重絶縁薄膜エレクトロルミネセンス装置を提供す
ることにある。SUMMARY OF THE INVENTION The present invention aims to solve the above-mentioned problems, and its object is to prevent deterioration of the transparent electrode by blocking the movement of hydrogen from the dielectric layer to the transparent electrode by the plasma CVD method, and also to prevent the plasma CVD method from deteriorating the quality of the transparent electrode. Good coverage of the method,
It is an object of the present invention to provide a double-insulated thin film electroluminescent device that utilizes a high deposition rate, has a high dielectric strength voltage, and has a good yield.
上記の問題点を解決するために、少なくとも、透明電極
、第１の誘電体領域、発光領域、第２の誘電体領域及び
背面電極が順次積層された構造を有する２重絶縁薄膜エ
レクトロルミネセンス装置において、本発明が講じた手
段は、
第１の誘電体領域として、透明電極側には、真空蒸着法
又はスパッタリング法により還元防止誘電体層を形成し
、発光領域側には、プラズマＣＶＤ法により高耐圧誘電
体層を形成するものである。In order to solve the above problems, a double insulating thin film electroluminescent device has a structure in which at least a transparent electrode, a first dielectric region, a light emitting region, a second dielectric region and a back electrode are sequentially laminated. The measures taken by the present invention are as follows: As the first dielectric region, a reduction preventing dielectric layer is formed on the transparent electrode side by vacuum evaporation or sputtering, and on the light emitting region side, a reduction preventing dielectric layer is formed by plasma CVD. This forms a high voltage dielectric layer.
第１の誘電体領域に還元防止誘電体層と高耐圧誘電体層
を形成したことによって、発光領域形成後に施すアニー
ル熱処理工程において、高耐圧誘電体層から放出され、
周囲に拡散する水素は、還元防止誘電体層に阻まれて透
明電極に到達し難くなり、透明電極における還元反応を
防止でき、ＩＴｏの黒化による輝度低下や、電極の抵抗
率の上昇、絶縁耐圧の低下を防止できる。By forming the reduction prevention dielectric layer and the high voltage dielectric layer in the first dielectric region, in the annealing heat treatment step performed after the formation of the light emitting region, emitted from the high voltage dielectric layer,
Hydrogen that diffuses into the surroundings is blocked by the anti-reduction dielectric layer and becomes difficult to reach the transparent electrode, which can prevent reduction reactions in the transparent electrode, resulting in lower brightness due to blackening of ITo, increased electrode resistivity, and insulation. Can prevent a drop in pressure resistance.
一方、還元防止誘電体層の段差被覆性の不良によるピン
ホール、クラック等が発生した場合であっても、段差被
覆性の良好なプラズマＣＶＤ法により形成された高耐圧
誘電体層に被覆されることから、スパッタリング法のみ
で第１の誘電体領域を形成していた従来の素子よりも更
に素子の絶縁耐圧が向上する。したがって、装置の歩留
りも向上する。On the other hand, even if pinholes, cracks, etc. occur due to poor step coverage of the reduction prevention dielectric layer, the high voltage dielectric layer formed by the plasma CVD method, which has good step coverage, will cover the layer. Therefore, the dielectric strength of the device is further improved compared to the conventional device in which the first dielectric region was formed only by sputtering. Therefore, the yield of the device is also improved.
次に、添付図面に基づいて本発明の詳細な説明する。第
１図は、本発明の実施例に係る２重絶縁薄膜エレクトロ
ルミネセンス装置の構造を示す断面図である。透明なガ
ラス基板ｌの上に膜厚２０００人のＩＴＯ（夏ｎｚ ０
３ ＋５ｎ０２ ）層をスパッタリング法によって被着
し、これをストライブ状にパターニングして、透明電極
２ａ、２ｂ。Next, the present invention will be described in detail based on the accompanying drawings. FIG. 1 is a cross-sectional view showing the structure of a double-insulated thin film electroluminescent device according to an embodiment of the present invention. ITO with a film thickness of 2000 on a transparent glass substrate (summer nz 0
3 +5n02 ) layer is deposited by sputtering and patterned into stripes to form transparent electrodes 2a, 2b.
２ｃを形成する。Form 2c.
次に、この透明電極２ａ、２ｂ、２ｃ及びガラス基板１
の上に、膜厚ｔｏｏｏ人のＡ２２０．をスパッタリング
法にて被着し、還元防止誘電体層３を形成する。この還
元防止誘電体層３は、蒸着法によっても形成できる。こ
こで、材料としてはＡｌ２Ｏ３以外に、Ｓｉｎ！、Ｓｉ
Ｎ、Ｙｚ ０３ 。Next, the transparent electrodes 2a, 2b, 2c and the glass substrate 1
On top of that, the film thickness is too much A220. is deposited by a sputtering method to form a reduction prevention dielectric layer 3. This anti-reduction dielectric layer 3 can also be formed by a vapor deposition method. Here, in addition to Al2O3, the material is Sin! , Si
N, Yz 03.
Ｔａ、Ｏ，などが使用可能である。Ta, O, etc. can be used.
この後、プラズマＣＶＤ法により、膜厚３０００人のＳ
ｉＮからなる高耐圧誘電体層４を形成する。ここで、プ
ラズマＣＶＤ法においては、反応ガスとしてＳ ｉ Ｈ
，／ＮＨ，／ＮＺを用い、圧力は０．２〜１，０ｔｏｒ
ｒ、基板温度は２５０°Ｃである。プラズマＣＶＤ法に
よる成膜では、ＳｉＯ□層、５ｉＯＮ層なども形成でき
る。After that, by plasma CVD method, S
A high voltage dielectric layer 4 made of iN is formed. Here, in the plasma CVD method, SiH is used as a reaction gas.
, /NH, /NZ at a pressure of 0.2 to 1,0 torr.
r, the substrate temperature is 250°C. In film formation using the plasma CVD method, a SiO□ layer, a 5iON layer, etc. can also be formed.
発光層５は、Ｍｎを０．５ｗｔ％含むＺｎＳを材料とし
て、電子ビーム蒸着法により、膜厚５０００人となるよ
うに形成する。この発光層５の形成後、真空（１０”’
ｔ ｏ ｒ ｒ）中において温度６００°Ｃ１１時間の
アニール熱処理を行なう。これは、ＺｎＳの結晶性及び
発光中心たるＭｎの分散性の改善を図るために必要だか
らである。このアニール熱処理後、ＳｉＮからなる膜厚
４０００人の第２誘電体層６をプラズマＣＶＤ法により
形成する。最後に、ＡＩ！、からなる膜厚５０００人の
背面電極７を形成する。The light-emitting layer 5 is made of ZnS containing 0.5 wt % Mn and is formed to a thickness of 5000 by electron beam evaporation. After forming the light emitting layer 5, vacuum (10"')
An annealing heat treatment is performed at a temperature of 600°C for 11 hours in a temperature of 600°C. This is because it is necessary to improve the crystallinity of ZnS and the dispersibility of Mn, which is the luminescent center. After this annealing heat treatment, a second dielectric layer 6 made of SiN and having a thickness of 4,000 layers is formed by plasma CVD. Finally, AI! A back electrode 7 having a film thickness of 5,000 layers is formed.
以上のようにして形成した２重絶縁薄膜エレクトロルミ
ネセンス装置においては、第１誘電体層が、還元防止誘
電体層３と高耐圧誘電体層４の複層構造となっており、
高耐圧誘電体層４との間に還元防止誘電体層３が形成さ
れているので、アニール熱処理中にプラズマＣＶＤ法に
より形成した高耐圧誘電体層４に含まれている水素が放
出された場合に、拡散して透明電極２ａ、２ｂ、２ｃに
到達する水素の量が減少し、透明電極２ａ、２ｂ。In the double insulating thin film electroluminescent device formed as described above, the first dielectric layer has a multilayer structure of the reduction prevention dielectric layer 3 and the high voltage dielectric layer 4,
Since the reduction prevention dielectric layer 3 is formed between the high voltage dielectric layer 4, if hydrogen contained in the high voltage dielectric layer 4 formed by the plasma CVD method is released during annealing heat treatment, The amount of hydrogen that diffuses and reaches the transparent electrodes 2a, 2b, 2c decreases.
２Ｃにおける還元反応が発生せず、ＩＴＯの黒化による
輝度の低下、電極の抵抗率の上昇、絶縁性劣化を防止で
きる。A reduction reaction in 2C does not occur, and it is possible to prevent a decrease in brightness due to blackening of ITO, an increase in electrode resistivity, and deterioration of insulation properties.
また、スパッタリング法による還元防止誘電体層３の段
差被覆性の不良、例えば、ピンホール、クラックなどが
、上層に形成されるプラズマＣＶＤ法による高耐圧誘電
体層４によって被覆されることによって、素子の耐圧が
確保され、絶縁破壊を防止していると考えられる。In addition, defects in the step coverage of the anti-reduction dielectric layer 3 formed by sputtering, such as pinholes and cracks, are covered by the high-voltage dielectric layer 4 formed on the upper layer formed by plasma CVD. It is thought that this ensures the withstand voltage of 100% and prevents dielectric breakdown.
この２重絶縁薄膜エレクトロルミネセンス装置の発光輝
度の印加電圧に対する特性を測定した。The characteristics of the luminance of this double-insulated thin film electroluminescent device with respect to the applied voltage were measured.
その結果を第２図に示す。曲線Ａは、従来の第１誘電体
層をスパッタリング法のみで形成した場合における特性
、曲線Ｂは、第１誘電体層をプラズマＣＶＤ法のみで形
成した場合における特性、曲線Ｃは、本実施例の特性を
示す。第２図に見られるように、本実施例の絶縁破壊電
圧は、従来の装置よりも２００Ｖ以上高くなっている。The results are shown in FIG. Curve A is the characteristic when the conventional first dielectric layer is formed only by the sputtering method, curve B is the characteristic when the first dielectric layer is formed only by the plasma CVD method, and curve C is the characteristic when the first dielectric layer is formed only by the plasma CVD method. shows the characteristics of As seen in FIG. 2, the dielectric breakdown voltage of this example is 200 V or more higher than that of the conventional device.
〔発明の効果〕
以上説明したように、本発明は、第１誘電体領域に、透
明電極と接する還元防止誘電体層と発光領域に接する高
耐圧誘電体層を設け、還元防止誘電体部を蒸着法又はス
パッタリング法により、高耐圧誘電体部をプラズマＣＶ
Ｄ法により、それぞれ形成したことを特徴とするので、
以下の効果を奏する。[Effects of the Invention] As explained above, the present invention provides a reduction prevention dielectric layer in contact with the transparent electrode and a high voltage dielectric layer in contact with the light emitting region in the first dielectric region, and provides the reduction prevention dielectric portion in the first dielectric region. Plasma CV coating of high voltage dielectric material by vapor deposition or sputtering method
Since each is characterized by being formed by the D method,
It has the following effects.
■ 還元防止誘電体層によって、アニール熱処理による
高耐圧誘電体層からの水素の拡散を低減させることがで
きるので、透明電極の水素による還元を防止でき、透明
電極の黒化、抵抗率の上昇等の変質による素子の発光輝
度の低下、絶縁耐圧の不良を防止できる。■ The anti-reduction dielectric layer can reduce the diffusion of hydrogen from the high-voltage dielectric layer due to annealing heat treatment, preventing reduction of the transparent electrode by hydrogen, resulting in blackening of the transparent electrode, increase in resistivity, etc. It is possible to prevent a decrease in the luminance of the device due to deterioration in quality and a defect in the dielectric strength.
■ 還元防止誘電体層の段差被覆性の不良は、高耐圧誘
電体層によって補償されるので、第１誘電体領域をスパ
ッタリング法のみで形成した従来の場合よりも更に絶縁
耐圧を向上させることができると共に装置の歩留りが向
上する。■ Since the defective step coverage of the reduction prevention dielectric layer is compensated for by the high voltage dielectric layer, it is possible to further improve the dielectric strength voltage compared to the conventional case in which the first dielectric region was formed only by sputtering. This also improves the yield of the device.
第１図は本発明に係る実施例の２重絶縁薄膜エレクトロ
ルミネッセンス装置の構造を示す断面図である。
第２図は同実施例の２重絶縁薄膜エレクトロルミネッセ
ンス装置における発光輝度の印加電圧に対する依存性を
、従来の２重絶縁薄膜エレクトロルミネッセンス装置の
依存性と共に示す特性グラフ図である。
第３図は従来の２重絶縁薄膜エレクトロルミネッセンス
装置の構造を示す概略図である。
〔符号の説明〕
ｌ・・・ガラス基板
２ ａ、 ２ ｂ、 ２ ｃ−透明電極・・・還元
防止誘電体層
・・・高耐圧誘電体層
・・・発光層
・・・第２誘電体層
・・・背面電極。FIG. 1 is a sectional view showing the structure of a double-insulated thin film electroluminescent device according to an embodiment of the present invention. FIG. 2 is a characteristic graph showing the dependence of luminescence luminance on applied voltage in the double-insulated thin-film electroluminescent device of the same embodiment, together with the dependence of the conventional double-insulated thin-film electroluminescent device. FIG. 3 is a schematic diagram showing the structure of a conventional double-insulated thin film electroluminescent device. [Explanation of symbols] l...Glass substrate 2a, 2b, 2c-Transparent electrode...Reduction prevention dielectric layer...High voltage dielectric layer...Light emitting layer...Second dielectric Layer: Back electrode.
Claims (1)
、第２の誘電体領域及び背面電極が順次積層された構造
を有する２重絶縁薄膜エレクトロルミネセンス装置にお
いて、 前記第１の誘電体領域のうち、前記透明電極側には真空
蒸着法又はスパッタリング法により還元防止誘電体層が
形成されており、前記発光領域側にはプラズマＣＶＤ法
により高耐圧誘電体層が形成されていることを特徴とす
る２重絶縁薄膜エレクトロルミネセンス装置。[Scope of Claims] A double insulating thin film electroluminescent device having a structure in which at least a transparent electrode, a first dielectric region, a light emitting region, a second dielectric region and a back electrode are sequentially laminated, comprising: Of the dielectric regions 1, a reduction prevention dielectric layer is formed on the transparent electrode side by a vacuum evaporation method or a sputtering method, and a high voltage dielectric layer is formed on the light emitting region side by a plasma CVD method. A double insulated thin film electroluminescent device characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2033269A JPH03236195A (en) | 1990-02-14 | 1990-02-14 | Double-insulated thin film electroluminescence device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2033269A JPH03236195A (en) | 1990-02-14 | 1990-02-14 | Double-insulated thin film electroluminescence device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03236195A true JPH03236195A (en) | 1991-10-22 |
Family
ID=12381807
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2033269A Pending JPH03236195A (en) | 1990-02-14 | 1990-02-14 | Double-insulated thin film electroluminescence device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03236195A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002158094A (en) * | 2000-11-17 | 2002-05-31 | Tdk Corp | Thin film el element and its manufacturing method |
| CN106604482A (en) * | 2016-11-25 | 2017-04-26 | 东莞市联洲知识产权运营管理有限公司 | Preparation method for AC electroluminescence device |
-
1990
- 1990-02-14 JP JP2033269A patent/JPH03236195A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002158094A (en) * | 2000-11-17 | 2002-05-31 | Tdk Corp | Thin film el element and its manufacturing method |
| CN106604482A (en) * | 2016-11-25 | 2017-04-26 | 东莞市联洲知识产权运营管理有限公司 | Preparation method for AC electroluminescence device |
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