JPS5991697A - Thin film el element - Google Patents
Thin film el elementInfo
- Publication number
- JPS5991697A JPS5991697A JP57201627A JP20162782A JPS5991697A JP S5991697 A JPS5991697 A JP S5991697A JP 57201627 A JP57201627 A JP 57201627A JP 20162782 A JP20162782 A JP 20162782A JP S5991697 A JPS5991697 A JP S5991697A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- emitting layer
- film
- light emitting
- vacuum
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims description 22
- 239000010408 film Substances 0.000 claims description 23
- 229910052984 zinc sulfide Inorganic materials 0.000 claims description 15
- 239000005083 Zinc sulfide Substances 0.000 claims description 5
- -1 rare earth fluoride Chemical class 0.000 claims description 5
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 5
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 claims description 5
- 238000004544 sputter deposition Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- LKNRQYTYDPPUOX-UHFFFAOYSA-K trifluoroterbium Chemical compound F[Tb](F)F LKNRQYTYDPPUOX-UHFFFAOYSA-K 0.000 description 3
- 229910004299 TbF3 Inorganic materials 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000005401 electroluminescence Methods 0.000 description 2
- 229910003437 indium oxide Inorganic materials 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- 239000000654 additive Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000011812 mixed powder Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
ｌａｌ 発明の技術分野
本発明は薄膜ＥＬ（エレクトロルミネセンス）素子に係
り、特に希土類弗化物を発光中心として用いた硫化亜鉛
（Ｚ ｎ Ｓ）薄膜を発光層とする薄１１１ＥＬ素子の
改良に関する。[Detailed Description of the Invention] lal Technical Field of the Invention The present invention relates to a thin film EL (electroluminescence) device, and in particular to a thin film EL (electroluminescence) device having a thin film of zinc sulfide (Z n S) using a rare earth fluoride as a luminescent center as a light emitting layer. This invention relates to improvements in 111EL elements.
（ｂｌ 従来技術と問題点
近年に至り多色表示を達成する観点から、種々の発光色
の得られる希土類弗化物を添加したＺｎＳ薄膜を発光層
とするＥＬ素子が既に提唱されている。(bl) Prior Art and Problems In recent years, from the viewpoint of achieving multicolor display, EL elements have already been proposed in which the light emitting layer is a ZnS thin film doped with rare earth fluoride that can emit various colors.
第１図はその一例としての発光層を絶縁層で挾み込んだ
所謂二重絶縁膜構造のＥＬ薄膜素子の要部を示す断面図
であって、１はガラス基板、２はインジウム・錫酸化物
（ＩＴＯ）よりなる透明電極、３は弗化テルビウム（Ｔ
ｂＦａ）を添加したＺｎ５ｉｉ膜よりなる発光層、４は
イツトリア（Ｙ２Ｏ２）よりなる絶縁膜、５はアルミニ
ウム（ＡＱ）よりなる電極を示す。FIG. 1 is a cross-sectional view showing the essential parts of an EL thin film element with a so-called double insulating film structure in which a light emitting layer is sandwiched between insulating layers as an example, in which 1 is a glass substrate, 2 is an indium/tin oxide 3 is a transparent electrode made of terbium fluoride (T
A light emitting layer made of a Zn5ii film doped with bFa), 4 an insulating film made of yttoria (Y2O2), and 5 an electrode made of aluminum (AQ).
かかるＥＬ発光素子を用いたＥＬパネルに文字や図形を
表示する場合、輝度−電圧特性の立ち上がりが緩やかで
あると、駆動回路での消費電力が大きくなるという問題
があるので、ＥＬ素子の輝度−電圧特性の立ち上がりは
急峻であることが必要である。When displaying characters or figures on an EL panel using such EL light emitting elements, there is a problem that if the brightness-voltage characteristic rises slowly, the power consumption in the drive circuit increases. It is necessary that the rise of the voltage characteristics be steep.
ところが従来のＥＬ発光素子においては、希土類弗化物
系ＥＬｉＩ！膜の発光効率及び輝度の向上を目的として
、発光層３としてスパンタリング法によって形成したＺ
ｎＳ薄膜を用いているが、かかる方法により形成した発
光層３中には望ましくない準位が多数発生し、発光層と
絶縁膜との界面に捕獲されていた電子は低電界でこの準
位にトンネリングし、その後ＺｎＳの伝導帯に放出され
る。However, in conventional EL light emitting devices, rare earth fluoride-based ELi! In order to improve the luminous efficiency and brightness of the film, Z was formed as the luminescent layer 3 by a sputtering method.
Although an nS thin film is used, many undesirable levels are generated in the light emitting layer 3 formed by this method, and electrons captured at the interface between the light emitting layer and the insulating film are moved to this level by a low electric field. tunnels and is then emitted into the conduction band of ZnS.
このため輝度−電圧特性の立ち上がりが緩やかとなり、
駆動回路での消費電力が増大するという問題があった。For this reason, the brightness-voltage characteristic rises slowly,
There was a problem that power consumption in the drive circuit increased.
（Ｃ１発明の目的
本発明の目的は、上記問題点を解消して、立ち上がりの
急峻な輝度−電圧特性を有する薄膜ＥＬ素子を提供する
ことにある。(C1 Purpose of the Invention The purpose of the present invention is to solve the above problems and provide a thin film EL element having brightness-voltage characteristics with a steep rise.
＋（Ｉ 発明の構成
本発明の特徴は、希土類弗化物を発光中心として用いた
硫化亜鉛薄膜からなる発光層を有し、該発光層の２つの
主面のうち少なくとも一方の表面に、無添加の硫化亜鉛
よりなる真空蒸着膜が形成されてなることにある。+(I Structure of the Invention The present invention is characterized by having a light-emitting layer made of a zinc sulfide thin film using rare earth fluoride as a luminescent center, and at least one of the two main surfaces of the light-emitting layer is free from additives. A vacuum-deposited film made of zinc sulfide is formed.
＋６＋ 発明の実施例 以下本発明の一実施例を図面を参照しながら説明する。+6+ Examples of the invention An embodiment of the present invention will be described below with reference to the drawings.
第２図は本発明にかかる二重絶縁構造の薄膜ＥＬ素子の
一実施例を示す要部断面図であって、６は無添加のＺｎ
Ｓよりなる真空蒸着膜であり、その他前記第１図と同一
部分は同一符号を附して示しである。FIG. 2 is a cross-sectional view of a main part showing an embodiment of a thin film EL element with a double insulation structure according to the present invention, and 6 is a sectional view showing an example of a thin film EL element having a double insulation structure.
This is a vacuum-deposited film made of S. Other parts that are the same as those in FIG. 1 are designated by the same reference numerals.
上記構造の薄膜ＥＬ素子は、次のようにして作成する。The thin film EL device having the above structure is produced as follows.
まず、ガラス基板１表面にインジウム酸化物と錫酸化物
との混合蒸着膜（ＩＴＯ膜）よりなる透明電極２を形成
する。その上にＹ２Ｏ３よりなる絶縁膜４を形成する。First, a transparent electrode 2 made of a mixed evaporated film of indium oxide and tin oxide (ITO film) is formed on the surface of a glass substrate 1. An insulating film 4 made of Y2O3 is formed thereon.
ここまでは従来の薄膜ＥＬ素子の製造方法と何ら変わる
所はない。Up to this point, there is no difference from the conventional manufacturing method of thin film EL elements.
次いで上記絶縁膜２上に、真空蒸着法により無添加のＺ
ｎ ’Ｓを凡そ５００ 〔人〕以上の厚さに被着せし
めて、ＺｎＳよりなる真空蒸着膜６を形成する。Next, additive-free Z is deposited on the insulating film 2 by vacuum evaporation.
A vacuum-deposited film 6 made of ZnS is formed by depositing n'S to a thickness of about 500 μm or more.
次いで発光母材としてのＺｎＳ粉末に発光中心となるＴ
ｂＦ３粉末を２％前後の割合で添加した混合粉末からな
るターゲットを用いて高周波スパッタリング法を施すこ
とにより、前記真空蒸着膜６上にＺｎＳ：ＴｂＦ３より
なる発光層３を形成する。Next, T as a luminescent center is added to the ZnS powder as a luminescent base material.
A light-emitting layer 3 made of ZnS:TbF3 is formed on the vacuum-deposited film 6 by performing high-frequency sputtering using a target made of a mixed powder to which bF3 powder is added at a ratio of about 2%.
本実施例の薄ＩＩｌ！ＥＬ素子は、ＺｎＳ：ＴｂＦ３よ
りなる発光Ｊ！ｉｆ３とその上下に形成されたＹ２Ｏ３
よりなる絶縁１１１ｉ４との間に、それぞれ無添加のＺ
ｎｓよりなる真空蒸着膜６が設けられた点が前記第１図
に示す従、来の薄Ｉｌｌ！ＥＬ素子と異なる。Thin IIl of this example! The EL element is a light-emitting J! made of ZnS:TbF3. if3 and Y2O3 formed above and below it
Additive-free Z between the insulation 111i4 made of
The conventional thin Ill! shown in FIG. Different from EL elements.
上記２つの無添加のＺｎＳよりなる真空蒸着膜６は、両
者の間に挟まれた発光層３がスパッタリング法によって
形成されるのと異なり、真空蒸着法を用いて形成する。The two vacuum-deposited films 6 made of additive-free ZnS are formed using a vacuum evaporation method, unlike the light-emitting layer 3 sandwiched between them, which is formed by a sputtering method.
このようにして形成した無添加のＺｎＳ膜６は、上記ス
パッタリング法によって形成された発光層３が多数の望
ましくない準位を有するのに対し、望ましくない準位を
有しない。従来の薄膜ＥＬ素子は前述したように、上記
望ましくない準位を介して発光層３とその両側の絶縁膜
４との界面の電子が放出されることから、輝度−電圧特
性の立ち上がりが緩やかとなるのに対し、本実施例の薄
膜ＥＬ素子においては、無添加のＺｎＳよりなる真空蒸
着膜６には望ましくない準位が存在しないので、発光層
３と真空蒸着膜６との界面の電子が低電界で放出される
ことがない。従って第３図の曲線Ａに示すように、その
輝度−電圧特性の立ち上がりは急峻となる。同図Ｂの曲
線は従来の薄膜ＥＬ素子の特性であって、これと比較す
れば本実施例の効果が容易に理解し得よう。The additive-free ZnS film 6 thus formed does not have any undesirable levels, whereas the light emitting layer 3 formed by the sputtering method has many undesirable levels. As mentioned above, in the conventional thin film EL element, since electrons at the interface between the light emitting layer 3 and the insulating film 4 on both sides thereof are emitted through the above-mentioned undesirable level, the brightness-voltage characteristic rises slowly. On the other hand, in the thin-film EL device of this example, since there is no undesirable level in the vacuum-deposited film 6 made of additive-free ZnS, the electrons at the interface between the light-emitting layer 3 and the vacuum-deposited film 6 are It is not emitted in low electric fields. Therefore, as shown by curve A in FIG. 3, the brightness-voltage characteristic rises steeply. The curve B in the same figure shows the characteristics of a conventional thin film EL element, and by comparing it with this, the effect of this embodiment can be easily understood.
なお上記一実施例では、発光層３の両側に真空蒸着１＊
６を配設したＡＣ駆動素子の例を掲げて説明したが、本
発明はこれに限定されるものではない。In the above embodiment, vacuum evaporation 1* is applied to both sides of the light emitting layer 3.
Although the description has been given using an example of an AC drive element in which 6 is provided, the present invention is not limited to this.
例えば、ＤＣ駆動素子においては透明電極２上に発光層
３が形成され、発光層３の上面に直接Ｎ電極５が形成さ
れる。かかるＤＣ駆動素子を本発明を用いて作成するに
は、発光層３と陰極（負極性側）にバイアスされる電極
（透明電極２またはＮ電極５）との間にのみ真空蒸着膜
６を介装すれば良く、かくすることにより上記一実施例
と同様の効果を得ることが出来る。For example, in a DC drive element, a light emitting layer 3 is formed on a transparent electrode 2, and an N electrode 5 is formed directly on the upper surface of the light emitting layer 3. In order to create such a DC drive element using the present invention, a vacuum deposited film 6 is interposed only between the light emitting layer 3 and the electrode (transparent electrode 2 or N electrode 5) biased toward the cathode (negative polarity side). By doing so, it is possible to obtain the same effect as in the above embodiment.
本発明を実施するに当り、上記真空蒸着膜６は、その厚
さを凡そ１００〔人〕以上とすることが必要である。In carrying out the present invention, the vacuum-deposited film 6 needs to have a thickness of about 100 [people] or more.
（ｆｌ 発明の詳細
な説明した如く本発明により、薄膜ＥＬ素子の輝度−電
圧特性の立ち上がりを急峻なものとすることが出来、従
って駆動回路で消費される電力を小さくすることが可能
となる。そのため薄膜ＥＬ素子の集積化も容易となる。(fl) As described in detail, according to the present invention, the brightness-voltage characteristics of a thin film EL element can be made to rise sharply, and therefore the power consumed by the drive circuit can be reduced. Therefore, it becomes easy to integrate thin film EL elements.
第１図は従来の薄膜ＥＬ素子の説明に供するための要部
断面図、第２図は本発明の一実施例を示す要部断面図、
第３図は本発明の効果を従来の薄膜ＥＬ素子と比較して
示す曲線図である。
図において、１はガラス基板、２は透明電極、３は発光
層、４は絶縁膜、５はＡＱ電極、６は無添加のＺｎＳよ
りなる真空蒸着膜を示す。
二＝〒］
第３図
、２
１FIG. 1 is a sectional view of a main part for explaining a conventional thin film EL element, FIG. 2 is a sectional view of a main part showing an embodiment of the present invention,
FIG. 3 is a curve diagram showing the effects of the present invention in comparison with a conventional thin film EL element. In the figure, 1 is a glass substrate, 2 is a transparent electrode, 3 is a light emitting layer, 4 is an insulating film, 5 is an AQ electrode, and 6 is a vacuum-deposited film made of additive-free ZnS. 2=〒] Figure 3, 2 1
Claims (1)
なる発光層を有し、該発光層の２つの主面のうち少なく
とも一方の表面に、無添加の硫化亜鉛よりなる真空蒸着
膜が形成されてなることを特徴とする薄膜ＥＬ素子。It has a light-emitting layer made of a zinc sulfide thin film used as a rare earth fluoride dilution center, and a vacuum-deposited film made of additive-free zinc sulfide is formed on at least one of the two main surfaces of the light-emitting layer. A thin film EL device characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57201627A JPS5991697A (en) | 1982-11-16 | 1982-11-16 | Thin film el element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57201627A JPS5991697A (en) | 1982-11-16 | 1982-11-16 | Thin film el element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5991697A true JPS5991697A (en) | 1984-05-26 |
Family
ID=16444197
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57201627A Pending JPS5991697A (en) | 1982-11-16 | 1982-11-16 | Thin film el element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5991697A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61271780A (en) * | 1985-05-27 | 1986-12-02 | シャープ株式会社 | Thin film el element |
| CN106118634A (en) * | 2016-06-29 | 2016-11-16 | 高大元 | A kind of preparation method of zinc sulfide film |
-
1982
- 1982-11-16 JP JP57201627A patent/JPS5991697A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61271780A (en) * | 1985-05-27 | 1986-12-02 | シャープ株式会社 | Thin film el element |
| JPH046274B2 (en) * | 1985-05-27 | 1992-02-05 | Sharp Kk | |
| CN106118634A (en) * | 2016-06-29 | 2016-11-16 | 高大元 | A kind of preparation method of zinc sulfide film |
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