JPS6323640B2 - - Google Patents
Info
- Publication number
- JPS6323640B2 JPS6323640B2 JP54140930A JP14093079A JPS6323640B2 JP S6323640 B2 JPS6323640 B2 JP S6323640B2 JP 54140930 A JP54140930 A JP 54140930A JP 14093079 A JP14093079 A JP 14093079A JP S6323640 B2 JPS6323640 B2 JP S6323640B2
- Authority
- JP
- Japan
- Prior art keywords
- light
- emitting layer
- thin film
- layer
- zns
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000010409 thin film Substances 0.000 claims description 23
- 239000010408 film Substances 0.000 claims description 6
- 150000004767 nitrides Chemical class 0.000 claims description 2
- 238000005401 electroluminescence Methods 0.000 description 25
- 230000005684 electric field Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 3
- 239000008188 pellet Substances 0.000 description 3
- -1 Si 3 N 4 Inorganic materials 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- 239000013543 active substance Substances 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 230000005283 ground state Effects 0.000 description 2
- 229910052761 rare earth metal Inorganic materials 0.000 description 2
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Description
【発明の詳細な説明】
本発明は交流電界の印加に依つてEL（Electro
Luminescence）発光を呈する薄膜EL素子の構造
に関するものである。[Detailed Description of the Invention] The present invention utilizes EL (Electro
Luminescence) relates to the structure of thin film EL elements that emit light.
従来、交流動作の薄膜EL素子に関して、発光
層に規則的に高い電界（106V／cm程度）を印加
し、絶縁耐圧、発光効率及び動作の安定性等を高
めるために、0.1〜2.0wt％のMn（あるいはCu、
Al、Br等）をドープしたZnS、ZnSe等の半導体
発光層をY2O3、TiO2等の誘電体薄膜でサンドイ
ツチした三層構造ZnS：Mn（又はZnSe：Mn）
EL素子が開発され、発光諸特性の向上が確かめ
られている。この薄膜EL素子は数KHzの交流電
界印加によつて高輝度発光し、しかも長寿命であ
るという特徴を有している。またこの薄膜EL素
子の発光に関しては印加電圧を昇圧していく過程
と高電圧側より降圧していく過程で、同じ印加電
圧に対して発光輝度が異なるといつたヒステリシ
ス特性を有していることが発見され、そしてこの
ヒステリシス特性を有する薄膜EL素子に印加電
圧を昇圧する過程に於いて、光、電界、熱等が付
与されると薄膜EL素子はその強度に対応した発
光輝度の状態に励起され、光、電界、熱等を除去
して元の状態に戻しても発光輝度は高くなつた状
態で維持される、いわゆるメモリー現象が表示技
術の新たな利用分野を開拓するに至つた。 Conventionally, for AC-operated thin-film EL devices, a high electric field (about 10 6 V/cm) is regularly applied to the light-emitting layer to improve dielectric strength, luminous efficiency, operation stability, etc. % Mn (or Cu,
A three-layer structure ZnS:Mn (or ZnSe:Mn) in which a semiconductor light-emitting layer such as ZnS, ZnSe, etc. doped with Al, Br , etc. is sandwiched with a dielectric thin film such as Y 2 O 3 , TiO 2, etc.
EL devices have been developed, and improvements in various light-emitting characteristics have been confirmed. This thin-film EL element emits high-intensity light when an alternating current electric field of several KHz is applied, and has a long lifespan. Furthermore, regarding the light emission of this thin film EL element, it has a hysteresis characteristic in which the light emission brightness differs for the same applied voltage in the process of increasing the applied voltage and in the process of decreasing the voltage from the high voltage side. was discovered, and in the process of increasing the applied voltage to a thin film EL element with this hysteresis characteristic, when light, electric field, heat, etc. are applied, the thin film EL element is excited to a state of luminance corresponding to the intensity. The so-called memory phenomenon, in which the luminance remains high even after light, electric field, heat, etc. are removed and the original state is restored, has led to the development of new fields of application for display technology.
薄膜EL素子の１列としてZnS：Mn薄膜EL素
子の基本的構造を第１図に示す。 Figure 1 shows the basic structure of a ZnS:Mn thin film EL device as one row of thin film EL devices.
添附図面に基いて薄膜EL素子の構造を具体的
に説明すると、ガラス基板１上にIn2O3、SnO2等
の透明電極２、さらにその上に積層してY2O3、
TiO2、Al2O3、Si3N4、SiO2等からなる第１の誘
電体層３がスパツタあるいは電子ビーム蒸着法等
により重畳形成されている。第１の誘電体層３上
にはZnS：Mn焼結ペレツトを電子ビーム蒸着す
ることにより得られるZnS発光層４が形成されて
いる。この時蒸着用のZnS：Mn焼結ペレツトに
は活性物質となるMnが目的に応じた濃度に設定
されたペレツトが使用される。ZnS発光層４上に
は第１の誘電体層３と同様の材質から成る第２の
誘電体層５が積層され、更にその上にAl等から
成る背面電極６が蒸着形成されている。透明電極
２と背面電極６は交流電源７に接続され、薄膜
EL素子が駆動される。 The structure of the thin film EL device will be explained in detail based on the attached drawings. A transparent electrode 2 made of In 2 O 3 , SnO 2 , etc. is placed on a glass substrate 1, and Y 2 O 3 , etc.
A first dielectric layer 3 made of TiO 2 , Al 2 O 3 , Si 3 N 4 , SiO 2 or the like is formed in an overlapping manner by sputtering or electron beam evaporation. A ZnS light emitting layer 4 is formed on the first dielectric layer 3 by electron beam evaporation of ZnS:Mn sintered pellets. At this time, the ZnS:Mn sintered pellets used for deposition are pellets in which the concentration of Mn, which is an active substance, is set to suit the purpose. A second dielectric layer 5 made of the same material as the first dielectric layer 3 is laminated on the ZnS light emitting layer 4, and a back electrode 6 made of Al or the like is further deposited thereon. The transparent electrode 2 and the back electrode 6 are connected to an AC power source 7, and the thin film
The EL element is driven.
電極２，６間にAC電圧を印加すると、ZnS発
光層４の両側の誘電体層３，５間に上記AC電圧
が誘起されることになり、従つてZnS発光層４内
に発生した電界によつて伝導帯に励起されかつ加
速されて充分なエネルギーを得た電子が、直接
Mn発光センターを励起し、励起されたMn発光
センターが基底状態に戻る際に黄橙色の発光を行
なう。即ち高電界で加速された電子がZnS発光層
４中の発光センターであるZnサイトに入つたMn
原子の電子を励起し、基底状態に落ちる時、略々
5850Åをピークに幅広い波長領域で、強い発光を
呈する。活性物質としてMn以外に希土類の弗化
物を用いた場合にはこの希土類に特有の縁色その
他の発光色が得られる。 When an AC voltage is applied between the electrodes 2 and 6, the above AC voltage is induced between the dielectric layers 3 and 5 on both sides of the ZnS luminescent layer 4, and therefore the electric field generated within the ZnS luminescent layer 4 Therefore, electrons that are excited and accelerated into the conduction band and have obtained sufficient energy can directly
The Mn luminescence center is excited, and when the excited Mn luminescence center returns to the ground state, it emits yellow-orange light. In other words, electrons accelerated by a high electric field enter the Zn site, which is the luminescent center in the ZnS luminescent layer 4.
When an atom's electrons are excited and fall to the ground state, approximately
It emits strong light in a wide wavelength range with a peak of 5850 Å. When a rare earth fluoride is used as an active substance in addition to Mn, a fringe color and other emission colors characteristic of this rare earth element can be obtained.
上記の如き構造を有する薄膜EL素子はスペー
ス・フアクタの利点を生かした平面薄型デイスプ
レイ・デバイスとして、文字及び図形を含むコン
ピユーターの出力表示端末機器その他種々の表示
装置に文字、記号、静止画像、動画像等の表示手
段として利用することができる。平面薄型表示装
置としての薄膜ELパネルは従来のブラウン管
（CRT）と比較して動作電圧が低く、同じ平面型
デイスプレイ・デバイスであるプラズマデイスプ
レイパネル（PDP）と比較すれば重量や強度面
で優れており、液晶（LCD）に比べて動作可能
温度範囲が広く、応答速度が速い等多くの利点を
有している。また純固体マトリツクス型パネルと
して使用できるため動作寿命が長く、そのアドレ
スの正確さとともにコンピユータ等の入出力表示
手段として非常に有効なものである。 The thin film EL element having the structure described above can be used as a flat thin display device that takes advantage of the space factor to display characters, symbols, still images, moving images, etc. It can be used as a means of displaying images, etc. Thin-film EL panels, used as flat flat display devices, have a lower operating voltage than conventional cathode ray tubes (CRTs), and are superior in terms of weight and strength compared to plasma display panels (PDPs), which are also flat display devices. It has many advantages over liquid crystals (LCDs), such as a wider operating temperature range and faster response speed. Furthermore, since it can be used as a pure solid matrix type panel, it has a long operating life, and its address accuracy makes it very effective as an input/output display means for computers and the like.
本発明は上記構成を有する薄膜EL素子に対し
て、更に高い発光輝度を得るために技術的手段を
駆使したものであり、発光層中に新たに薄い誘電
体層を挿入することにより発光強度の高くなる発
光層と誘電体層との接合界面を増加した新規有用
な薄膜EL素子を提供することを目的とするもの
である。 The present invention utilizes technical means to obtain even higher luminance in the thin-film EL element having the above structure, and the luminous intensity is increased by inserting a new thin dielectric layer into the luminescent layer. The object of the present invention is to provide a new and useful thin film EL device in which the height of the bonding interface between the light emitting layer and the dielectric layer is increased.
以下、本発明の１実施例について図面を参照し
ながら詳説する。 Hereinafter, one embodiment of the present invention will be explained in detail with reference to the drawings.
第２図は本発明の１実施例を示す薄膜EL素子
の構成図である。 FIG. 2 is a block diagram of a thin film EL device showing one embodiment of the present invention.
発光層４を誘電体層３，５に埋設した三層構造
薄膜EL素子に於いて、発光層４からの発光は詳
細に分析検討した結果、発光層４の厚さ方向に対
して均一ではなく、誘電体層３，５と発光層４と
の接合界面近傍の発光層４領域に於いて特に強い
発光が観測されることが判明した。 In a three-layer structure thin film EL device in which the light emitting layer 4 is embedded in the dielectric layers 3 and 5, detailed analysis and study revealed that the light emitted from the light emitting layer 4 is not uniform in the thickness direction of the light emitting layer 4. It was found that particularly strong light emission was observed in the region of the light emitting layer 4 near the bonding interface between the dielectric layers 3 and 5 and the light emitting layer 4.
本発明はこの現象を積極的に利用し、第２図に
示す如く、発光層４中に薄い中間誘電体層８を埋
設し、これによつて発光層内部に新たな誘電体層
との接合界面を形成したものである。尚、図中第
１図と同一符号は同一内容を示し、説明を省略す
る。 The present invention makes active use of this phenomenon, and as shown in FIG. It forms an interface. Note that the same reference numerals as in FIG. 1 indicate the same contents, and the explanation will be omitted.
上記構成とすることにより、強い発光を呈する
発光層と誘電体層との接合界面領域が増加し、発
光層４内での強発光部が増加するため全体として
薄膜EL素子の発光輝度は高くなる。尚、第２図
に示す各層は第１の誘電体層３がSi3N4から成る
膜厚100〜3000Åの絶縁膜で構成され、中間誘電
体層８を薄く層状に埋設した発光層４がZnS：
TbF3で構成され下部領域上部領域ともそれぞれ
膜厚1000〜10000Åに設定されている。また中間
誘電体層８はY2O3で構成され膜厚100〜2000Åに
設定されている。第２の誘電体層５は第１の誘電
体層３と同様にSi3N4から成り膜厚1000〜3000Å
に設定されている。 With the above configuration, the bonding interface area between the light-emitting layer and the dielectric layer that emits strong light increases, and the strong light-emitting portion within the light-emitting layer 4 increases, so that the light emission brightness of the thin film EL element increases as a whole. . In each of the layers shown in FIG. 2, the first dielectric layer 3 is composed of an insulating film made of Si 3 N 4 and has a thickness of 100 to 3000 Å, and the light emitting layer 4 has an intermediate dielectric layer 8 embedded in a thin layer. ZnS:
Both the lower region and the upper region are made of TbF 3 and have a film thickness of 1000 to 10000 Å. Further, the intermediate dielectric layer 8 is made of Y 2 O 3 and has a thickness of 100 to 2000 Å. The second dielectric layer 5 is made of Si 3 N 4 like the first dielectric layer 3 and has a thickness of 1000 to 3000 Å.
is set to .
第３図はZnS：TbF3から成る発光層４を有す
る薄膜EL素子を第１図に示す構成及び第２図に
示す構成とした場合の発光輝度を比較する特性図
であり、l1が第１図の構成、l2が第２図の構成に
それぞれ対応する。第２図に示す構成とした場
合、発光開始電圧は高くなるが印加電圧を上昇す
ると最終的に到達する最大発光輝度は高くなるこ
とがわかる。 FIG. 3 is a characteristic diagram comparing the luminance of a thin film EL device having a light emitting layer 4 made of ZnS:TbF 3 with the configuration shown in FIG. 1 and the configuration shown in FIG . The configuration in FIG. 1 and l 2 correspond to the configuration in FIG. 2, respectively. It can be seen that in the case of the configuration shown in FIG. 2, the emission starting voltage becomes higher, but as the applied voltage is increased, the maximum emission brightness that is finally reached becomes higher.
以上詳説した如く、本発明によれば、発光層が
耐水性のある窒化膜内に埋設されて外部環境から
保護されまた発光層内にはEL発光を得るための
キヤリアを増蓄する上で有効な酸化膜と発光層と
の界面が新たに形成され、この界面準位より多数
の自由電子が発光層内へ供給される。またこの界
面準位は発光センターとして作用し発光層内で強
い発光を呈する領域が増化するため、得られる最
大発光輝度は高くなり、コントラストの良好な表
示素子を得ることができる。 As explained in detail above, according to the present invention, the light-emitting layer is embedded in a water-resistant nitride film to protect it from the external environment, and the light-emitting layer is effective in accumulating carriers for obtaining EL light emission. A new interface between the oxide film and the light-emitting layer is formed, and a large number of free electrons are supplied from this interface level into the light-emitting layer. In addition, this interface level acts as a light-emitting center and increases the area in the light-emitting layer that emits strong light, so that the maximum luminance that can be obtained is increased and a display element with good contrast can be obtained.
第１図は従来の薄膜EL素子の基本的構造を示
す構成図である。第２図は本発明の１実施例を示
す薄膜EL素子の構成図である。第３図は薄膜EL
素子の印加電圧に対する発光輝度を示す特性図で
ある。
４…発光層、８…中間誘電体層。
FIG. 1 is a block diagram showing the basic structure of a conventional thin film EL element. FIG. 2 is a block diagram of a thin film EL device showing one embodiment of the present invention. Figure 3 shows thin film EL
FIG. 2 is a characteristic diagram showing luminance of light emitted from an element with respect to applied voltage. 4...Light emitting layer, 8...Intermediate dielectric layer.
Claims (1)
化膜から成る誘電体層内に埋設するとともに前記
発光層内に酸化膜の中間誘電体層を埋設したこと
を特徴とする薄膜EL素子。1. A thin film EL device, characterized in that a light emitting layer that emits EL light upon application of a voltage is embedded within a dielectric layer made of a nitride film, and an intermediate dielectric layer made of an oxide film is embedded within the light emitting layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14093079A JPS5665492A (en) | 1979-10-30 | 1979-10-30 | Thin film el element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14093079A JPS5665492A (en) | 1979-10-30 | 1979-10-30 | Thin film el element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5665492A JPS5665492A (en) | 1981-06-03 |
| JPS6323640B2 true JPS6323640B2 (en) | 1988-05-17 |
Family
ID=15280114
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14093079A Granted JPS5665492A (en) | 1979-10-30 | 1979-10-30 | Thin film el element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5665492A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103588759A (en) * | 2013-11-20 | 2014-02-19 | 北京桑普生物化学技术有限公司 | Preparation technology of 5,6-O-isopropylidene-L-ascorbic acid |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5829880A (en) * | 1981-08-13 | 1983-02-22 | Matsushita Electric Ind Co Ltd | Electric field luminescent element |
| JPS58172891A (en) * | 1982-04-02 | 1983-10-11 | ソニー株式会社 | El display element |
| JPH0824071B2 (en) * | 1987-11-16 | 1996-03-06 | 日本電信電話株式会社 | Thin film electroluminescent device |
-
1979
- 1979-10-30 JP JP14093079A patent/JPS5665492A/en active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103588759A (en) * | 2013-11-20 | 2014-02-19 | 北京桑普生物化学技术有限公司 | Preparation technology of 5,6-O-isopropylidene-L-ascorbic acid |
| CN103588759B (en) * | 2013-11-20 | 2016-08-17 | 北京桑普生物化学技术有限公司 | The preparation technology of 5,6-O-isopropylidene-L-AA |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5665492A (en) | 1981-06-03 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS5823191A (en) | Thin film el element | |
| JPS6323640B2 (en) | ||
| JPH027072B2 (en) | ||
| JPS6016078B2 (en) | thin film light emitting device | |
| JP2621057B2 (en) | Thin film EL element | |
| JPS6132798B2 (en) | ||
| JPS5855636B2 (en) | Thin film EL element | |
| JPS5835587A (en) | Thin film el element | |
| JPS6089098A (en) | Electrode structure of thin film el element | |
| JPH0251891A (en) | Thin film el element | |
| JPH0123917B2 (en) | ||
| JPS5914875B2 (en) | Manufacturing method of thin film EL element | |
| JPS598040B2 (en) | Thin film EL element | |
| JPS592158B2 (en) | Thin film EL element | |
| JPS6124192A (en) | Thin film electroluminescent element | |
| JPS5855635B2 (en) | Thin film EL element | |
| JPH0473880B2 (en) | ||
| JPH0666154B2 (en) | Thin film electroluminescent device | |
| JPS6050577A (en) | Thin film electroluminescence panel | |
| JPS623427B2 (en) | ||
| JPS5812996B2 (en) | electroluminescence device | |
| JPS6210435B2 (en) | ||
| JPS59154793A (en) | Thin film el element | |
| JPS6252888A (en) | Thin film el element | |
| JPS5821795B2 (en) | Structure of thin film EL element |