JPH0458698B2 - - Google Patents

Info

Publication number
JPH0458698B2
JPH0458698B2 JP58030928A JP3092883A JPH0458698B2 JP H0458698 B2 JPH0458698 B2 JP H0458698B2 JP 58030928 A JP58030928 A JP 58030928A JP 3092883 A JP3092883 A JP 3092883A JP H0458698 B2 JPH0458698 B2 JP H0458698B2
Authority
JP
Japan
Prior art keywords
region
signal
semiconductor
gate region
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58030928A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59158551A (ja
Inventor
Junichi Nishizawa
Naoshige Tamamushi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Holdings Corp
Original Assignee
Fuji Photo Film Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Photo Film Co Ltd filed Critical Fuji Photo Film Co Ltd
Priority to JP58030928A priority Critical patent/JPS59158551A/ja
Priority to DE3407038A priority patent/DE3407038C2/de
Priority to US06/584,351 priority patent/US4623909A/en
Publication of JPS59158551A publication Critical patent/JPS59158551A/ja
Publication of JPH0458698B2 publication Critical patent/JPH0458698B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/28—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors
    • H10F30/285—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors the devices having PN homojunction gates
    • H10F30/2863—Field-effect phototransistors having PN homojunction gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/196—Junction field effect transistor [JFET] image sensors; Static induction transistor [SIT] image sensors

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Light Receiving Elements (AREA)
  • Junction Field-Effect Transistors (AREA)
JP58030928A 1983-02-28 1983-02-28 半導体光検出装置及びその駆動方法 Granted JPS59158551A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP58030928A JPS59158551A (ja) 1983-02-28 1983-02-28 半導体光検出装置及びその駆動方法
DE3407038A DE3407038C2 (de) 1983-02-28 1984-02-27 Halbleiter-Photodetektor und Verfahren zu dessen Betrieb
US06/584,351 US4623909A (en) 1983-02-28 1984-02-28 Semiconductor photodetector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58030928A JPS59158551A (ja) 1983-02-28 1983-02-28 半導体光検出装置及びその駆動方法

Publications (2)

Publication Number Publication Date
JPS59158551A JPS59158551A (ja) 1984-09-08
JPH0458698B2 true JPH0458698B2 (en, 2012) 1992-09-18

Family

ID=12317340

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58030928A Granted JPS59158551A (ja) 1983-02-28 1983-02-28 半導体光検出装置及びその駆動方法

Country Status (3)

Country Link
US (1) US4623909A (en, 2012)
JP (1) JPS59158551A (en, 2012)
DE (1) DE3407038C2 (en, 2012)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1269446C (en) * 1984-12-28 1990-05-22 CAMERA
US5309013A (en) * 1985-04-30 1994-05-03 Canon Kabushiki Kaisha Photoelectric conversion device
US4774556A (en) * 1985-07-25 1988-09-27 Nippondenso Co., Ltd. Non-volatile semiconductor memory device
DE3706278A1 (de) * 1986-02-28 1987-09-03 Canon Kk Halbleitervorrichtung und herstellungsverfahren hierfuer
US4908688A (en) * 1986-03-14 1990-03-13 Motorola, Inc. Means and method for providing contact separation in silicided devices
US4970386A (en) * 1989-06-22 1990-11-13 Westinghouse Electric Corp. Vertical FET high speed optical sensor
US5307169A (en) * 1991-05-07 1994-04-26 Olympus Optical Co., Ltd. Solid-state imaging device using high relative dielectric constant material as insulating film
JPH0799298A (ja) * 1993-09-28 1995-04-11 Sony Corp 固体撮像素子及びその製造方法
US7768085B2 (en) * 2005-10-11 2010-08-03 Icemos Technology Ltd. Photodetector array using isolation diffusions as crosstalk inhibitors between adjacent photodiodes
US9735188B2 (en) * 2015-01-15 2017-08-15 Hoon Kim Image sensor with solar cell function
MY174333A (en) * 2015-10-14 2020-04-08 Hoon Kim Image sensor with solar cell function

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4364072A (en) 1978-03-17 1982-12-14 Zaidan Hojin Handotai Kenkyu Shinkokai Static induction type semiconductor device with multiple doped layers for potential modification
US4427990A (en) 1978-07-14 1984-01-24 Zaidan Hojin Handotai Kenkyu Shinkokai Semiconductor photo-electric converter with insulated gate over p-n charge storage region
JPS5515229A (en) * 1978-07-18 1980-02-02 Semiconductor Res Found Semiconductor photograph device
JPS5598871A (en) 1979-01-22 1980-07-28 Semiconductor Res Found Static induction transistor
JPS56165473A (en) * 1980-05-24 1981-12-19 Semiconductor Res Found Semiconductor pickup device
JPS5772370A (en) * 1980-10-23 1982-05-06 Canon Inc Photoelectric converter
US4365262A (en) * 1980-11-26 1982-12-21 Handotai Kenkyu Shinkokai Semiconductor image sensor
GB2111745B (en) 1981-12-07 1985-06-19 Philips Electronic Associated Insulated-gate field-effect transistors
JPS58105672A (ja) * 1981-12-17 1983-06-23 Fuji Photo Film Co Ltd 半導体撮像装置
JPS59108464A (ja) * 1982-12-14 1984-06-22 Olympus Optical Co Ltd 固体撮像装置

Also Published As

Publication number Publication date
US4623909A (en) 1986-11-18
DE3407038C2 (de) 1996-01-25
DE3407038A1 (de) 1984-08-30
JPS59158551A (ja) 1984-09-08

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