JPH0454374B2 - - Google Patents

Info

Publication number
JPH0454374B2
JPH0454374B2 JP58011820A JP1182083A JPH0454374B2 JP H0454374 B2 JPH0454374 B2 JP H0454374B2 JP 58011820 A JP58011820 A JP 58011820A JP 1182083 A JP1182083 A JP 1182083A JP H0454374 B2 JPH0454374 B2 JP H0454374B2
Authority
JP
Japan
Prior art keywords
bump
current density
present
plating
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58011820A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59136950A (ja
Inventor
Kentaro Kuhara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Instruments Inc
Original Assignee
Seiko Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Instruments Inc filed Critical Seiko Instruments Inc
Priority to JP58011820A priority Critical patent/JPS59136950A/ja
Publication of JPS59136950A publication Critical patent/JPS59136950A/ja
Publication of JPH0454374B2 publication Critical patent/JPH0454374B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10W72/012—
    • H10W72/251—

Landscapes

  • Wire Bonding (AREA)
  • Electroplating Methods And Accessories (AREA)
JP58011820A 1983-01-27 1983-01-27 バンプ型電極の形成方法 Granted JPS59136950A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58011820A JPS59136950A (ja) 1983-01-27 1983-01-27 バンプ型電極の形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58011820A JPS59136950A (ja) 1983-01-27 1983-01-27 バンプ型電極の形成方法

Publications (2)

Publication Number Publication Date
JPS59136950A JPS59136950A (ja) 1984-08-06
JPH0454374B2 true JPH0454374B2 (enExample) 1992-08-31

Family

ID=11788418

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58011820A Granted JPS59136950A (ja) 1983-01-27 1983-01-27 バンプ型電極の形成方法

Country Status (1)

Country Link
JP (1) JPS59136950A (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0695519B2 (ja) * 1985-12-26 1994-11-24 株式会社東芝 バンプ形成方法
JP4713290B2 (ja) * 2005-09-30 2011-06-29 エヌ・イーケムキャット株式会社 金バンプ又は金配線の形成方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5773953A (en) * 1980-10-25 1982-05-08 Nec Home Electronics Ltd Production of semiconductor device

Also Published As

Publication number Publication date
JPS59136950A (ja) 1984-08-06

Similar Documents

Publication Publication Date Title
US4320250A (en) Electrodes for concentrator solar cells, and methods for manufacture thereof
JPH0454374B2 (enExample)
JPS59213145A (ja) 半導体装置及びその製造方法
US4222165A (en) Two-phase continuous poly silicon gate CCD
JPS628943B2 (enExample)
JP2950045B2 (ja) 半導体装置の製造方法
JPH0558653B2 (enExample)
JP2717166B2 (ja) 半導体装置の製造方法
JPH0587144B2 (enExample)
JPS622654A (ja) 半導体装置およびその製造方法
JPH065609A (ja) バンプ形成方法
JPH03125469A (ja) Ｍｉｍキャパシタの構造
JPH02301142A (ja) 半導体装置における微細スルーホールの形成方法
JPS6059742B2 (ja) 半導体装置およびその製造方法
JP2547590B2 (ja) 半導体装置の製造方法
JP3047422B2 (ja) ゲート電極形成方法
JPS60163446A (ja) スル−ホ−ルの形成方法
JP2924085B2 (ja) 電極ラインの製造方法
JP2699498B2 (ja) 半導体装置の製造方法
JPS5987889A (ja) 半導体素子の製造方法
JPS5825229A (ja) 半導体装置の製造方法
JPH0464470B2 (enExample)
JPS641055B2 (enExample)
JPH0373549A (ja) 金属突起形成基板の製造方法
JPS6240770A (ja) 半導体装置の製造方法